ES525910A0 - Un sistema para hacer dispositivos fotovoltaicos - Google Patents

Un sistema para hacer dispositivos fotovoltaicos

Info

Publication number
ES525910A0
ES525910A0 ES525910A ES525910A ES525910A0 ES 525910 A0 ES525910 A0 ES 525910A0 ES 525910 A ES525910 A ES 525910A ES 525910 A ES525910 A ES 525910A ES 525910 A0 ES525910 A0 ES 525910A0
Authority
ES
Spain
Prior art keywords
photovoltaic devices
make photovoltaic
make
devices
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES525910A
Other languages
English (en)
Other versions
ES8502289A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES525910A0 publication Critical patent/ES525910A0/es
Publication of ES8502289A1 publication Critical patent/ES8502289A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
ES525910A 1982-09-24 1983-09-23 Un sistema para hacer dispositivos fotovoltaicos Expired ES8502289A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42268882A 1982-09-24 1982-09-24

Publications (2)

Publication Number Publication Date
ES525910A0 true ES525910A0 (es) 1984-12-16
ES8502289A1 ES8502289A1 (es) 1984-12-16

Family

ID=23675934

Family Applications (2)

Application Number Title Priority Date Filing Date
ES525910A Expired ES8502289A1 (es) 1982-09-24 1983-09-23 Un sistema para hacer dispositivos fotovoltaicos
ES534760A Granted ES534760A0 (es) 1982-09-24 1984-07-31 Un sistema para hacer dispositivos fotovoltaicos

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES534760A Granted ES534760A0 (es) 1982-09-24 1984-07-31 Un sistema para hacer dispositivos fotovoltaicos

Country Status (7)

Country Link
EP (1) EP0107357A3 (es)
JP (1) JPS5982778A (es)
KR (1) KR840005934A (es)
AU (1) AU1938583A (es)
BR (1) BR8305223A (es)
ES (2) ES8502289A1 (es)
IL (1) IL69756A0 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2784841B2 (ja) * 1990-08-09 1998-08-06 キヤノン株式会社 太陽電池用基板
JP2908067B2 (ja) * 1991-05-09 1999-06-21 キヤノン株式会社 太陽電池用基板および太陽電池
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
US5800632A (en) * 1995-09-28 1998-09-01 Canon Kabushiki Kaisha Photovoltaic device and method for manufacturing it
DE69708463T2 (de) * 1996-02-27 2002-05-16 Canon K.K., Tokio/Tokyo Photovoltaische Vorrichtung, die ein undurchsichtiges Substrat mit einer spezifischen unregelmässigen Oberflächenstruktur aufweist
DE29616846U1 (de) * 1996-09-27 1996-11-07 METAPLAS IONON Oberflächenveredelungstechnik GmbH, 51427 Bergisch Gladbach Anlage zur Beschichtung von Schraubenköpfen
JP2003037281A (ja) 2001-05-17 2003-02-07 Canon Inc 被覆材及び光起電力素子
DE102007061687B4 (de) 2007-12-19 2010-04-29 Cpi Chemiepark Institut Gmbh Verfahren zum Mattierungsätzen von Siliziumsubstraten und Ätzmischung zur Durchführung des Verfahrens
CN102189490A (zh) * 2011-03-30 2011-09-21 江苏艾德太阳能科技有限公司 一种太阳能电池用单晶硅片的机械式制绒方法
DE102017203977A1 (de) 2017-03-10 2018-09-13 Gebr. Schmid Gmbh Verfahren zur Herstellung texturierter Wafer und Aufrausprühstrahlbehandlungsvorrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3991460A (en) * 1973-08-29 1976-11-16 Westinghouse Electric Corporation Method of making a light activated semiconductor controlled rectifier
US4116718A (en) * 1978-03-09 1978-09-26 Atlantic Richfield Company Photovoltaic array including light diffuser
US4328390A (en) * 1979-09-17 1982-05-04 The University Of Delaware Thin film photovoltaic cell
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
EP0042458A1 (en) * 1980-05-20 1981-12-30 Solarex Corporation Solar cell module and method of increasing the output current of said module
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same

Also Published As

Publication number Publication date
AU1938583A (en) 1984-03-29
KR840005934A (ko) 1984-11-19
JPS5982778A (ja) 1984-05-12
EP0107357A2 (en) 1984-05-02
IL69756A0 (en) 1983-12-30
ES8600569A1 (es) 1985-09-16
EP0107357A3 (en) 1985-04-10
ES8502289A1 (es) 1984-12-16
ES534760A0 (es) 1985-09-16
BR8305223A (pt) 1984-05-02

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