ES474113A1 - Un dispositivo de transferencia de cargas. - Google Patents

Un dispositivo de transferencia de cargas.

Info

Publication number
ES474113A1
ES474113A1 ES474113A ES474113A ES474113A1 ES 474113 A1 ES474113 A1 ES 474113A1 ES 474113 A ES474113 A ES 474113A ES 474113 A ES474113 A ES 474113A ES 474113 A1 ES474113 A1 ES 474113A1
Authority
ES
Spain
Prior art keywords
charge
layer
channel
semiconductor layer
control electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES474113A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES474113A1 publication Critical patent/ES474113A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/468—Four-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Analogue/Digital Conversion (AREA)
  • Filters That Use Time-Delay Elements (AREA)

Abstract

Un dispositivo de transferencia de cargas que comprende una capa semiconductora de un primer tipo de conductividad, medios para permitir la introducción local en la capa semiconductora de información en la forma de paquetes de carga, medios de lectura pera permitir que sea leída la información en otra posición en la capa, y electrodos de control al menos sobre una de las caras de la capa para permitir que sean generados capacitivamente campos eléctricos en la capa semiconductora con al ayuda de señales de sincronismo de fases múltiples, por medio de cuyos campos los paquetes de carga pueden ser transferidos hasta los medios de lectura a lo largo de un canal en la capa en una dirección paralela a la misma, caracterizado porque al menos uno de los electrodos de control o una parte del mismo esta conectada a medios de conmutación para permitir la aplicación de una tensión que en un instante es igual a una fase de la señal de sincronismo que, junto con las tensiones de sincronismo aplicadas alos electrodos de control adyacentes, asegura la transferencia de un paquete de carga en el canal al menos bajo un electrodo de control, y en otro instante es igual a una tensión de bloque que impide la transferencia de un paquete de carga en el canal al menos bajo un electrodo de control.
ES474113A 1977-10-13 1978-10-11 Un dispositivo de transferencia de cargas. Expired ES474113A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE7711228,A NL186666C (nl) 1977-10-13 1977-10-13 Ladingsoverdrachtinrichting.
NLAANVRAGE7801242,A NL186788C (nl) 1977-10-13 1978-02-03 Ladingsoverdrachtsinrichting.

Publications (1)

Publication Number Publication Date
ES474113A1 true ES474113A1 (es) 1979-05-01

Family

ID=26645353

Family Applications (1)

Application Number Title Priority Date Filing Date
ES474113A Expired ES474113A1 (es) 1977-10-13 1978-10-11 Un dispositivo de transferencia de cargas.

Country Status (11)

Country Link
US (1) US4266146A (es)
JP (1) JPS5465465A (es)
BE (1) BE871174A (es)
CA (1) CA1135858A (es)
DE (1) DE2844248C3 (es)
ES (1) ES474113A1 (es)
FR (1) FR2406288A1 (es)
GB (1) GB2005948B (es)
IT (1) IT1099379B (es)
NL (2) NL186666C (es)
SE (1) SE438931B (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55164937U (es) * 1979-05-17 1980-11-27
DE2936682A1 (de) * 1979-09-11 1981-09-10 Siemens AG, 1000 Berlin und 8000 München Eingangsstufe fuer eine monolitisch integrierte ladungsverschiebeanordnung
DE3019437C2 (de) * 1980-05-21 1985-08-29 Siemens AG, 1000 Berlin und 8000 München Aus mehreren CTD-Elementen bestehende CTD-Leitung
JPS62230053A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電荷転送装置
JPS6316670A (ja) * 1986-07-09 1988-01-23 Fuji Photo Film Co Ltd 電荷結合素子を用いた遅延素子
NL8701030A (nl) * 1987-05-01 1988-12-01 Philips Nv Ladingsgekoppelde inrichting.
US5653153A (en) * 1996-02-09 1997-08-05 Greenwald; Christopher L. On-vehicle brake lathe and alignment device therefor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919468A (en) * 1972-11-27 1975-11-11 Rca Corp Charge transfer circuits
US3876952A (en) * 1973-05-02 1975-04-08 Rca Corp Signal processing circuits for charge-transfer, image-sensing arrays
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
CA1023050A (en) * 1974-05-16 1977-12-20 Western Electric Company, Incorporated Charge transfer delay line filters
US3931463A (en) * 1974-07-23 1976-01-06 Rca Corporation Scene brightness compensation system with charge transfer imager
US4031315A (en) * 1974-09-27 1977-06-21 Siemens Aktiengesellschaft Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation
FR2349236A1 (fr) * 1976-04-23 1977-11-18 Thomson Csf Etage d'entree pour filtre passe-bas a transfert de charges et filtre passe-bas comportant un tel etage d'entree

Also Published As

Publication number Publication date
BE871174A (fr) 1979-04-11
DE2844248B2 (es) 1980-05-14
GB2005948A (en) 1979-04-25
GB2005948B (en) 1982-03-31
NL186666B (nl) 1990-08-16
NL186666C (nl) 1992-03-16
NL7801242A (nl) 1979-08-07
NL186788C (nl) 1991-02-18
NL7711228A (nl) 1979-04-18
US4266146A (en) 1981-05-05
SE438931B (sv) 1985-05-13
JPS5533188B2 (es) 1980-08-29
JPS5465465A (en) 1979-05-26
FR2406288B1 (es) 1983-01-07
IT1099379B (it) 1985-09-18
DE2844248A1 (de) 1979-04-19
CA1135858A (en) 1982-11-16
IT7828601A0 (it) 1978-10-10
DE2844248C3 (de) 1981-02-05
SE7810569L (sv) 1979-04-14
FR2406288A1 (fr) 1979-05-11

Similar Documents

Publication Publication Date Title
CA1073551A (en) Monolithic semiconductor apparatus adapted for sequential charge transfer
ES474113A1 (es) Un dispositivo de transferencia de cargas.
GB1377122A (en) Charge coupled circuits
NL7806961A (nl) Elektrische midden- of hoogspanningskabel.
IT7925310A0 (it) Circuito generatore di tensione di polarizzazione inversa di porta.
GB2022920A (en) Electric charge transfer devices
KR890015427A (ko) 전하 결합장치
IT1072402B (it) Interruttore di circuito con capacita di limitazione di corrente
IT1073458B (it) Sezionatore di messa a terra per stazione blindata ad alta tensione
KR880006703A (ko) 전하 결합 소자
IT968449B (it) Dispositivo di interruzione per corrente continua ad alta tensione
KR860009429A (ko) 전하 결합 장치
GB1379141A (en) Charge coupled devices
IT8622720A0 (it) Circuito limitatore di tensione.
IT967438B (it) Conduttore elettrico per alta tensione blindato con riempimento di gas isolante
NO163798C (no) Porselensisolator for hoeye spenninger.
ES410300A1 (es) Aparato de transferencia de carga para la formacion de ima-genes.
BE779843A (nl) Geheel beschermde elektrische verdeel en schakelinrichting voorhoge spanning
JPS62183560A (ja) 電荷結合装置
KR870010632A (ko) 반도체장치
IT8319908A0 (it) Trasformatore di tensione attivo di tipo capacitivo.
ES249833Y (es) Una tarjeta de conexionado con elemento de conexion por en- chufe
IT7826119A0 (it) Circuito di blocco della tensione di ritraccia.
SU534794A1 (ru) Регистр сдвига
KR880014575A (ko) 전하 결합 소자