NL186666C - Ladingsoverdrachtinrichting. - Google Patents

Ladingsoverdrachtinrichting.

Info

Publication number
NL186666C
NL186666C NLAANVRAGE7711228,A NL7711228A NL186666C NL 186666 C NL186666 C NL 186666C NL 7711228 A NL7711228 A NL 7711228A NL 186666 C NL186666 C NL 186666C
Authority
NL
Netherlands
Prior art keywords
cargo transfer
cargo
transfer
Prior art date
Application number
NLAANVRAGE7711228,A
Other languages
English (en)
Dutch (nl)
Other versions
NL186666B (nl
NL7711228A (nl
Inventor
Arthur Hermanus Maria Roermund
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7711228,A priority Critical patent/NL186666C/xx
Priority to NLAANVRAGE7801242,A priority patent/NL186788C/xx
Priority to US05/948,281 priority patent/US4266146A/en
Priority to GB7839904A priority patent/GB2005948B/en
Priority to IT28601/78A priority patent/IT1099379B/it
Priority to SE7810569A priority patent/SE438931B/sv
Priority to AT0730578A priority patent/AT377635B/de
Priority to FR7828997A priority patent/FR2406288A1/fr
Priority to DE2844248A priority patent/DE2844248C3/de
Priority to BE191045A priority patent/BE871174A/xx
Priority to CA000313082A priority patent/CA1135858A/en
Priority to ES474113A priority patent/ES474113A1/es
Priority to JP12525878A priority patent/JPS5465465A/ja
Publication of NL7711228A publication Critical patent/NL7711228A/xx
Publication of NL186666B publication Critical patent/NL186666B/xx
Application granted granted Critical
Publication of NL186666C publication Critical patent/NL186666C/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76858—Four-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Analogue/Digital Conversion (AREA)
NLAANVRAGE7711228,A 1977-10-13 1977-10-13 Ladingsoverdrachtinrichting. NL186666C (nl)

Priority Applications (13)

Application Number Priority Date Filing Date Title
NLAANVRAGE7711228,A NL186666C (nl) 1977-10-13 1977-10-13 Ladingsoverdrachtinrichting.
NLAANVRAGE7801242,A NL186788C (nl) 1977-10-13 1978-02-03 Ladingsoverdrachtsinrichting.
US05/948,281 US4266146A (en) 1977-10-13 1978-10-03 Charge transfer devices having switchable blocking electrodes
IT28601/78A IT1099379B (it) 1977-10-13 1978-10-10 Dispositivo a trasferimento di cariche
SE7810569A SE438931B (sv) 1977-10-13 1978-10-10 Laddningsoverforingsanordning bl a innefattande en omkopplingsbar blockeringselektrod for att blockera den underliggande laddningen under en eller flera klockperioder
GB7839904A GB2005948B (en) 1977-10-13 1978-10-10 Charge transfer devices
AT0730578A AT377635B (de) 1977-10-13 1978-10-11 Ladungsuebertragungsanordnung
FR7828997A FR2406288A1 (fr) 1977-10-13 1978-10-11 Dispositif de transfert de charge
DE2844248A DE2844248C3 (de) 1977-10-13 1978-10-11 Ladungsübertragungsanordnung
BE191045A BE871174A (fr) 1977-10-13 1978-10-11 Dispositif de transfert de charge
CA000313082A CA1135858A (en) 1977-10-13 1978-10-11 Charge transfer devices
ES474113A ES474113A1 (es) 1977-10-13 1978-10-11 Un dispositivo de transferencia de cargas.
JP12525878A JPS5465465A (en) 1977-10-13 1978-10-13 Charge transfer device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE7711228,A NL186666C (nl) 1977-10-13 1977-10-13 Ladingsoverdrachtinrichting.
NLAANVRAGE7801242,A NL186788C (nl) 1977-10-13 1978-02-03 Ladingsoverdrachtsinrichting.

Publications (3)

Publication Number Publication Date
NL7711228A NL7711228A (nl) 1979-04-18
NL186666B NL186666B (nl) 1990-08-16
NL186666C true NL186666C (nl) 1992-03-16

Family

ID=26645353

Family Applications (2)

Application Number Title Priority Date Filing Date
NLAANVRAGE7711228,A NL186666C (nl) 1977-10-13 1977-10-13 Ladingsoverdrachtinrichting.
NLAANVRAGE7801242,A NL186788C (nl) 1977-10-13 1978-02-03 Ladingsoverdrachtsinrichting.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7801242,A NL186788C (nl) 1977-10-13 1978-02-03 Ladingsoverdrachtsinrichting.

Country Status (11)

Country Link
US (1) US4266146A (xx)
JP (1) JPS5465465A (xx)
BE (1) BE871174A (xx)
CA (1) CA1135858A (xx)
DE (1) DE2844248C3 (xx)
ES (1) ES474113A1 (xx)
FR (1) FR2406288A1 (xx)
GB (1) GB2005948B (xx)
IT (1) IT1099379B (xx)
NL (2) NL186666C (xx)
SE (1) SE438931B (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55164937U (xx) * 1979-05-17 1980-11-27
DE2936682A1 (de) * 1979-09-11 1981-09-10 Siemens AG, 1000 Berlin und 8000 München Eingangsstufe fuer eine monolitisch integrierte ladungsverschiebeanordnung
DE3019437C2 (de) * 1980-05-21 1985-08-29 Siemens AG, 1000 Berlin und 8000 München Aus mehreren CTD-Elementen bestehende CTD-Leitung
JPS62230053A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電荷転送装置
JPS6316670A (ja) * 1986-07-09 1988-01-23 Fuji Photo Film Co Ltd 電荷結合素子を用いた遅延素子
NL8701030A (nl) * 1987-05-01 1988-12-01 Philips Nv Ladingsgekoppelde inrichting.
US5653153A (en) * 1996-02-09 1997-08-05 Greenwald; Christopher L. On-vehicle brake lathe and alignment device therefor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919468A (en) * 1972-11-27 1975-11-11 Rca Corp Charge transfer circuits
US3876952A (en) * 1973-05-02 1975-04-08 Rca Corp Signal processing circuits for charge-transfer, image-sensing arrays
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
CA1023050A (en) * 1974-05-16 1977-12-20 Western Electric Company, Incorporated Charge transfer delay line filters
US3931463A (en) * 1974-07-23 1976-01-06 Rca Corporation Scene brightness compensation system with charge transfer imager
US4031315A (en) * 1974-09-27 1977-06-21 Siemens Aktiengesellschaft Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation
FR2349236A1 (fr) * 1976-04-23 1977-11-18 Thomson Csf Etage d'entree pour filtre passe-bas a transfert de charges et filtre passe-bas comportant un tel etage d'entree

Also Published As

Publication number Publication date
BE871174A (fr) 1979-04-11
CA1135858A (en) 1982-11-16
DE2844248B2 (xx) 1980-05-14
FR2406288B1 (xx) 1983-01-07
JPS5465465A (en) 1979-05-26
FR2406288A1 (fr) 1979-05-11
GB2005948A (en) 1979-04-25
IT7828601A0 (it) 1978-10-10
IT1099379B (it) 1985-09-18
DE2844248A1 (de) 1979-04-19
JPS5533188B2 (xx) 1980-08-29
NL186788C (nl) 1991-02-18
SE7810569L (sv) 1979-04-14
NL186666B (nl) 1990-08-16
GB2005948B (en) 1982-03-31
ES474113A1 (es) 1979-05-01
SE438931B (sv) 1985-05-13
US4266146A (en) 1981-05-05
NL7801242A (nl) 1979-08-07
DE2844248C3 (de) 1981-02-05
NL7711228A (nl) 1979-04-18

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
R1VN Request for mentioning name(s) of the inventor(s) in the patent or request for changing the name(s) of inventor(s) with respec
NP1 Patent granted (not automatically)
V2 Lapsed due to non-payment of the last due maintenance fee for the patent application