ES435585A1 - A method of manufacturing a semiconductor device. (Machine-translation by Google Translate, not legally binding) - Google Patents

A method of manufacturing a semiconductor device. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES435585A1
ES435585A1 ES435585A ES435585A ES435585A1 ES 435585 A1 ES435585 A1 ES 435585A1 ES 435585 A ES435585 A ES 435585A ES 435585 A ES435585 A ES 435585A ES 435585 A1 ES435585 A1 ES 435585A1
Authority
ES
Spain
Prior art keywords
insulation layer
translation
semiconductor
manufacturing
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES435585A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to ES435585A priority Critical patent/ES435585A1/en
Publication of ES435585A1 publication Critical patent/ES435585A1/en
Expired legal-status Critical Current

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Abstract

A method of manufacturing a semiconductor device, in particular an integrated monolithic circuit, having a semiconductor body and comprising an insulation layer of insulating material, sunk locally into the semiconductor body from a surface of said body, into which a material is introduced of activation in the semiconductor material through at least a part of the surface situated next to the sunken insulation layer, so that a zone of a certain type of conductivity is formed since it is activated with the activation material and which contacts the an underlying semiconductor part having the same type of conductivity and, in the contact area, the zone extends down to a depth greater than that of the sunken insulation layer, characterized in that the activation material is presented to the aforesaid part of surface before the formation of the sunken insulation layer. (Machine-translation by Google Translate, not legally binding)
ES435585A 1975-03-13 1975-03-13 A method of manufacturing a semiconductor device. (Machine-translation by Google Translate, not legally binding) Expired ES435585A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES435585A ES435585A1 (en) 1975-03-13 1975-03-13 A method of manufacturing a semiconductor device. (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES435585A ES435585A1 (en) 1975-03-13 1975-03-13 A method of manufacturing a semiconductor device. (Machine-translation by Google Translate, not legally binding)

Publications (1)

Publication Number Publication Date
ES435585A1 true ES435585A1 (en) 1976-12-16

Family

ID=8468847

Family Applications (1)

Application Number Title Priority Date Filing Date
ES435585A Expired ES435585A1 (en) 1975-03-13 1975-03-13 A method of manufacturing a semiconductor device. (Machine-translation by Google Translate, not legally binding)

Country Status (1)

Country Link
ES (1) ES435585A1 (en)

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