ES411448A1 - A semiconductor device. (Machine-translation by Google Translate, not legally binding) - Google Patents
A semiconductor device. (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES411448A1 ES411448A1 ES411448A ES411448A ES411448A1 ES 411448 A1 ES411448 A1 ES 411448A1 ES 411448 A ES411448 A ES 411448A ES 411448 A ES411448 A ES 411448A ES 411448 A1 ES411448 A1 ES 411448A1
- Authority
- ES
- Spain
- Prior art keywords
- base
- layer
- coating
- emitter
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
A semiconductor device of the improved transistor type, formed in a semiconductor body having a major or major surface, transistor including a collector region in the body, a base conduction zone disposed in a part of the collector region, a plurality of separate base regions disposed in the conduction zone and extending to the collector region, and an emitter region disposed in each transistor base region in which the improvement comprises an insulating coating disposed above the surface of said body, said coating having a plurality of base openings that expose portions of the base conduction zone on the surface, and a plurality of emitter openings, each of which exposes an emitter region on the surface ; a first layer of refractory metal disposed on top of a part of said cover and which, through the emitter openings, makes ohmic contact with the emitter regions; a second layer of refractory metal disposed above a portion of said coating and through the base openings, to effect ohmic contact with the base conduction zone; a first very conductive and non-refractory metal layer disposed above a part of the first refractory layer and a part of said coating; and a second layer of very conductive and non-refractory metal disposed above a part of the second refractory layer and a portion of said coating. (Machine-translation by Google Translate, not legally binding)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES411448A ES411448A1 (en) | 1973-02-09 | 1973-02-09 | A semiconductor device. (Machine-translation by Google Translate, not legally binding) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES411448A ES411448A1 (en) | 1973-02-09 | 1973-02-09 | A semiconductor device. (Machine-translation by Google Translate, not legally binding) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES411448A1 true ES411448A1 (en) | 1976-01-01 |
Family
ID=8463363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES411448A Expired ES411448A1 (en) | 1973-02-09 | 1973-02-09 | A semiconductor device. (Machine-translation by Google Translate, not legally binding) |
Country Status (1)
| Country | Link |
|---|---|
| ES (1) | ES411448A1 (en) |
-
1973
- 1973-02-09 ES ES411448A patent/ES411448A1/en not_active Expired
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