Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/213—Channel regions of field-effect devices
  • H10D62/221—Channel regions of field-effect devices of FETs
  • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
  • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
  • H10D84/401—Combinations of FETs or IGBTs with BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
  • H10D84/401—Combinations of FETs or IGBTs with BJTs
  • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
  • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
  • H10D84/85—Complementary IGFETs, e.g. CMOS
  • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/01—Manufacture or treatment
  • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
  • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
  • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/10—Isolation regions comprising dielectric materials
  • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

• Element Separation (AREA)
• Bipolar Transistors (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Local Oxidation Of Silicon (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Electrodes Of Semiconductors (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=19813322

Family Applications (2)

Family Applications After (1)

Country Status (16)

Families Citing this family (10)

Family Cites Families (5)

• 1971
  • 1971-06-08 NL NL7107805.A patent/NL160988C/xx not_active IP Right Cessation
• 1972
  • 1972-04-18 GB GB1786072A patent/GB1389311A/en not_active Expired
  • 1972-04-18 IT IT68209/72A patent/IT958758B/it active
  • 1972-04-18 NO NO1346/72A patent/NO134676C/no unknown
  • 1972-04-18 AT AT338972A patent/AT351597B/de not_active IP Right Cessation
  • 1972-04-18 FR FR7213556A patent/FR2140383B1/fr not_active Expired
  • 1972-04-18 ES ES401854A patent/ES401854A1/es not_active Expired
  • 1972-04-18 CA CA140,068A patent/CA963172A/en not_active Expired
  • 1972-04-18 BE BE782285A patent/BE782285A/xx not_active IP Right Cessation
  • 1972-04-18 DE DE2218680A patent/DE2218680C2/de not_active Expired
  • 1972-04-18 DK DK188272AA patent/DK135819B/da not_active IP Right Cessation
  • 1972-04-18 SE SE7205034A patent/SE371333B/xx unknown
  • 1972-04-18 CH CH570072A patent/CH542519A/de not_active IP Right Cessation
  • 1972-04-18 BR BR2321/72A patent/BR7202321D0/pt unknown
  • 1972-04-18 JP JP3838872A patent/JPS5416194B1/ja active Pending
  • 1972-11-15 ES ES408617A patent/ES408617A1/es not_active Expired
• 1973
  • 1973-03-15 IN IN584/CAL/73A patent/IN139051B/en unknown
• 1976
  • 1976-02-04 JP JP51010439A patent/JPS51139276A/ja active Granted
  • 1976-02-04 JP JP51010440A patent/JPS51139277A/ja active Granted
  • 1976-02-04 JP JP1043876A patent/JPS5416397B2/ja not_active Expired
• 1980
  • 1980-06-19 JP JP8223280A patent/JPS568880A/ja active Pending

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