ES388188A1 - Improvements in semiconductor devices that have high frequency responses and improved power dissipation capacity. (Machine-translation by Google Translate, not legally binding) - Google Patents
Improvements in semiconductor devices that have high frequency responses and improved power dissipation capacity. (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES388188A1 ES388188A1 ES388188A ES388188A ES388188A1 ES 388188 A1 ES388188 A1 ES 388188A1 ES 388188 A ES388188 A ES 388188A ES 388188 A ES388188 A ES 388188A ES 388188 A1 ES388188 A1 ES 388188A1
- Authority
- ES
- Spain
- Prior art keywords
- region
- translation
- high frequency
- semiconductor devices
- machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Improvements in semiconductor devices that have improved high frequency responses and power dissipation capacity that comprise; A body of a type of conductivity, said body having, at least, a pit extending from one of its larger surfaces; A first dielectric layer attached to said body at the base of said pit; A first conductivity region of opposite type formed within said body adjacent to said pit and extending from said first dielectric layer towards said larger surface; A first metallic layer disposed on said first dielectric layer of said pit and coupled to said first region; A second region of said first type of conductivity and disposed on said first region and forming with it a connection pn; y A second metallic layer coupled to said second region. (Machine-translation by Google Translate, not legally binding)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES388188A ES388188A1 (en) | 1971-02-12 | 1971-02-12 | Improvements in semiconductor devices that have high frequency responses and improved power dissipation capacity. (Machine-translation by Google Translate, not legally binding) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES388188A ES388188A1 (en) | 1971-02-12 | 1971-02-12 | Improvements in semiconductor devices that have high frequency responses and improved power dissipation capacity. (Machine-translation by Google Translate, not legally binding) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES388188A1 true ES388188A1 (en) | 1974-02-16 |
Family
ID=8457804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES388188A Expired ES388188A1 (en) | 1971-02-12 | 1971-02-12 | Improvements in semiconductor devices that have high frequency responses and improved power dissipation capacity. (Machine-translation by Google Translate, not legally binding) |
Country Status (1)
| Country | Link |
|---|---|
| ES (1) | ES388188A1 (en) |
-
1971
- 1971-02-12 ES ES388188A patent/ES388188A1/en not_active Expired
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