ES386515A1 - Un metodo de manufacturar un dispositivo semiconductor. - Google Patents

Un metodo de manufacturar un dispositivo semiconductor.

Info

Publication number
ES386515A1
ES386515A1 ES386515A ES386515A ES386515A1 ES 386515 A1 ES386515 A1 ES 386515A1 ES 386515 A ES386515 A ES 386515A ES 386515 A ES386515 A ES 386515A ES 386515 A1 ES386515 A1 ES 386515A1
Authority
ES
Spain
Prior art keywords
emitter
base
region
mutually spaced
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES386515A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES386515A1 publication Critical patent/ES386515A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
ES386515A 1969-12-18 1970-12-16 Un metodo de manufacturar un dispositivo semiconductor. Expired ES386515A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6172969 1969-12-18

Publications (1)

Publication Number Publication Date
ES386515A1 true ES386515A1 (es) 1973-11-16

Family

ID=10487378

Family Applications (1)

Application Number Title Priority Date Filing Date
ES386515A Expired ES386515A1 (es) 1969-12-18 1970-12-16 Un metodo de manufacturar un dispositivo semiconductor.

Country Status (9)

Country Link
US (1) US3704177A (en, 2012)
BE (1) BE760417A (en, 2012)
CH (1) CH519790A (en, 2012)
DE (1) DE2060348C3 (en, 2012)
ES (1) ES386515A1 (en, 2012)
FR (1) FR2116324B1 (en, 2012)
GB (1) GB1324507A (en, 2012)
NL (1) NL7018159A (en, 2012)
SE (1) SE355895B (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226433B2 (en, 2012) * 1971-09-18 1977-07-14
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
FR2241875B1 (en, 2012) * 1973-08-21 1977-09-09 Radiotechnique Compelec
US3948694A (en) * 1975-04-30 1976-04-06 Motorola, Inc. Self-aligned method for integrated circuit manufacture
US4337475A (en) * 1979-06-15 1982-06-29 Gold Star Semiconductor, Ltd. High power transistor with highly doped buried base layer
FR2480503A1 (fr) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc Transistor de commutation pour forte puissance
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
SE355895B (en, 2012) 1973-05-07
FR2116324B1 (en, 2012) 1976-09-03
NL7018159A (en, 2012) 1971-06-22
FR2116324A1 (en, 2012) 1972-07-13
DE2060348C3 (de) 1978-05-24
CH519790A (de) 1972-02-29
DE2060348A1 (de) 1971-06-24
DE2060348B2 (de) 1977-10-06
GB1324507A (en) 1973-07-25
BE760417A (en, 2012) 1971-06-16
US3704177A (en) 1972-11-28

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