ES343726A1 - Mejoras en los dispositivos policristalinos. - Google Patents

Mejoras en los dispositivos policristalinos.

Info

Publication number
ES343726A1
ES343726A1 ES343726A ES343726A ES343726A1 ES 343726 A1 ES343726 A1 ES 343726A1 ES 343726 A ES343726 A ES 343726A ES 343726 A ES343726 A ES 343726A ES 343726 A1 ES343726 A1 ES 343726A1
Authority
ES
Spain
Prior art keywords
cadmium
aluminium
silicon
semi
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES343726A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES343726A1 publication Critical patent/ES343726A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10P95/00—

Landscapes

  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ES343726A 1966-08-04 1967-08-02 Mejoras en los dispositivos policristalinos. Expired ES343726A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57025666A 1966-08-04 1966-08-04

Publications (1)

Publication Number Publication Date
ES343726A1 true ES343726A1 (es) 1968-10-01

Family

ID=24278891

Family Applications (1)

Application Number Title Priority Date Filing Date
ES343726A Expired ES343726A1 (es) 1966-08-04 1967-08-02 Mejoras en los dispositivos policristalinos.

Country Status (5)

Country Link
DE (1) DE1614382B2 (en:Method)
ES (1) ES343726A1 (en:Method)
GB (1) GB1178869A (en:Method)
NL (1) NL6710714A (en:Method)
SE (1) SE317137B (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain

Also Published As

Publication number Publication date
DE1614382B2 (de) 1971-07-08
DE1614382A1 (de) 1970-05-27
SE317137B (en:Method) 1969-11-10
GB1178869A (en) 1970-01-21
NL6710714A (en:Method) 1968-02-05

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