GB1178869A - Improved Polycrystalline Field Effect Device and Methods of Manufacture thereof - Google Patents
Improved Polycrystalline Field Effect Device and Methods of Manufacture thereofInfo
- Publication number
- GB1178869A GB1178869A GB3236967A GB3236967A GB1178869A GB 1178869 A GB1178869 A GB 1178869A GB 3236967 A GB3236967 A GB 3236967A GB 3236967 A GB3236967 A GB 3236967A GB 1178869 A GB1178869 A GB 1178869A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cadmium
- aluminium
- silicon
- semi
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000012216 screening Methods 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 239000002002 slurry Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229940095626 calcium fluoride Drugs 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000005350 fused silica glass Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 150000004771 selenides Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 150000004763 sulfides Chemical class 0.000 abstract 1
- 150000004772 tellurides Chemical class 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 239000011787 zinc oxide Substances 0.000 abstract 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1,178,869. T.F.T. R. C. A. CORPORATION. 13 July, 1967 [4 Aug., 1966], No. 32369/67. Heading H1K. A T.F.T. has a polycrystalline semi-conductor layer with a thickness in excess of 10,000Š and which is composed of crystallites with size greater than 5000Š. Preferably, the thickness is about 250,000Š and the crystallite size about 10,000Š. Such a transistor may be formed by silk screening a semi-conductor slurry of suitable particle size on to an insulating support and sintering the layer thus formed. The electrodes may be applied by masked evaporation and the gate insulation by masked evaporation or sputtering or by silk screening. Suitable substrate materials are glass, ceramics, and fused quartz. Suitable semi-conductors are germanium, silicon, germanium-silicon alloys, zinc oxide, the sulphides, selenides and tellurides of zinc and cadmium, and the phosphides, arsenides and antimonides of aluminium, gallium and indium. The gate insulation (preferably less than 2Á thick) may be of silicon monoxide, silica, silicon nitride, calciumfluoride, alumina, or zinc sulphide. The source and drain electrodes (less than 100Á or, preferably, 1-20Á apart) may be of aluminium, indium, gold or copper and the gate electrode of aluminium or gold. The formation of cadmium sulphide is described and the preparation of slurries of cadmium sulphide and cadmium selenide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US57025666A | 1966-08-04 | 1966-08-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1178869A true GB1178869A (en) | 1970-01-21 |
Family
ID=24278891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3236967A Expired GB1178869A (en) | 1966-08-04 | 1967-07-13 | Improved Polycrystalline Field Effect Device and Methods of Manufacture thereof |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE1614382B2 (en) |
| ES (1) | ES343726A1 (en) |
| GB (1) | GB1178869A (en) |
| NL (1) | NL6710714A (en) |
| SE (1) | SE317137B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2118365A (en) * | 1982-04-13 | 1983-10-26 | Suwa Seikosha Kk | A thin film MOS transistor and an active matrix liquid crystal display device |
| US5554861A (en) * | 1982-04-13 | 1996-09-10 | Seiko Epson Corporation | Thin film transistors and active matrices including the same |
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2140203B (en) * | 1983-03-15 | 1987-01-14 | Canon Kk | Thin film transistor with wiring layer continuous with the source and drain |
-
1967
- 1967-06-30 SE SE1017067A patent/SE317137B/xx unknown
- 1967-07-13 GB GB3236967A patent/GB1178869A/en not_active Expired
- 1967-08-02 ES ES343726A patent/ES343726A1/en not_active Expired
- 1967-08-03 NL NL6710714A patent/NL6710714A/xx unknown
- 1967-08-03 DE DE19671614382 patent/DE1614382B2/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2118365A (en) * | 1982-04-13 | 1983-10-26 | Suwa Seikosha Kk | A thin film MOS transistor and an active matrix liquid crystal display device |
| US5124768A (en) * | 1982-04-13 | 1992-06-23 | Seiko Epson Corporation | Thin film transistor and active matrix assembly including same |
| US5294555A (en) * | 1982-04-13 | 1994-03-15 | Seiko Epson Corporation | Method of manufacturing thin film transistor and active matrix assembly including same |
| US5554861A (en) * | 1982-04-13 | 1996-09-10 | Seiko Epson Corporation | Thin film transistors and active matrices including the same |
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| US6242777B1 (en) | 1982-04-13 | 2001-06-05 | Seiko Epson Corporation | Field effect transistor and liquid crystal devices including the same |
| US6294796B1 (en) | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1614382B2 (en) | 1971-07-08 |
| ES343726A1 (en) | 1968-10-01 |
| DE1614382A1 (en) | 1970-05-27 |
| NL6710714A (en) | 1968-02-05 |
| SE317137B (en) | 1969-11-10 |
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