ES331588A1 - Un dispositivo semiconductor de efecto de campo. - Google Patents

Un dispositivo semiconductor de efecto de campo.

Info

Publication number
ES331588A1
ES331588A1 ES0331588A ES331588A ES331588A1 ES 331588 A1 ES331588 A1 ES 331588A1 ES 0331588 A ES0331588 A ES 0331588A ES 331588 A ES331588 A ES 331588A ES 331588 A1 ES331588 A1 ES 331588A1
Authority
ES
Spain
Prior art keywords
layer
channel
field
translation
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0331588A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES331588A1 publication Critical patent/ES331588A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
ES0331588A 1965-12-27 1966-09-26 Un dispositivo semiconductor de efecto de campo. Expired ES331588A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51652365A 1965-12-27 1965-12-27

Publications (1)

Publication Number Publication Date
ES331588A1 true ES331588A1 (es) 1967-07-01

Family

ID=24055959

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0331588A Expired ES331588A1 (es) 1965-12-27 1966-09-26 Un dispositivo semiconductor de efecto de campo.

Country Status (3)

Country Link
DE (1) DE1564541A1 (cg-RX-API-DMAC7.html)
ES (1) ES331588A1 (cg-RX-API-DMAC7.html)
NL (1) NL6613549A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
DE1564541A1 (de) 1970-10-01
NL6613549A (cg-RX-API-DMAC7.html) 1967-06-28

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