ES284803A1 - A transistor device (Machine-translation by Google Translate, not legally binding) - Google Patents
A transistor device (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES284803A1 ES284803A1 ES284803A ES284803A ES284803A1 ES 284803 A1 ES284803 A1 ES 284803A1 ES 284803 A ES284803 A ES 284803A ES 284803 A ES284803 A ES 284803A ES 284803 A1 ES284803 A1 ES 284803A1
- Authority
- ES
- Spain
- Prior art keywords
- translation
- machine
- legally binding
- google translate
- transistor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000011343 solid material Substances 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A transistor device comprising a germanium body of a conductivity type to which locally has a diffused surface layer of the other type of conductivity on which an ohmic contact and a rectifier contact is provided comprising a recrystallized layer of a conductivity type the which carries a certain amount of solid material for electrodes, while the diffused layer of the other type of conductivity below the recrystallized layer is at a greater depth in the germanium body, characterized in that the solid material for electrodes contains at least one of lead and bismuth materials and at least one of tin and Indian materials. (Machine-translation by Google Translate, not legally binding)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL274385 | 1962-02-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES284803A1 true ES284803A1 (en) | 1963-07-01 |
Family
ID=19753589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES284803A Expired ES284803A1 (en) | 1962-02-05 | 1963-02-02 | A transistor device (Machine-translation by Google Translate, not legally binding) |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT246229B (en) |
| BE (1) | BE627972A (en) |
| CH (1) | CH409151A (en) |
| ES (1) | ES284803A1 (en) |
| GB (1) | GB1030443A (en) |
| NL (1) | NL274385A (en) |
-
0
- BE BE627972D patent/BE627972A/xx unknown
- NL NL274385D patent/NL274385A/xx unknown
-
1963
- 1963-02-01 GB GB422963A patent/GB1030443A/en not_active Expired
- 1963-02-01 CH CH125463A patent/CH409151A/en unknown
- 1963-02-02 ES ES284803A patent/ES284803A1/en not_active Expired
- 1963-02-04 AT AT84763A patent/AT246229B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| AT246229B (en) | 1966-04-12 |
| GB1030443A (en) | 1966-05-25 |
| BE627972A (en) | |
| NL274385A (en) | |
| CH409151A (en) | 1966-03-15 |
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