GB1030443A - Improvements in and relating to transistors - Google Patents
Improvements in and relating to transistorsInfo
- Publication number
- GB1030443A GB1030443A GB422963A GB422963A GB1030443A GB 1030443 A GB1030443 A GB 1030443A GB 422963 A GB422963 A GB 422963A GB 422963 A GB422963 A GB 422963A GB 1030443 A GB1030443 A GB 1030443A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pellets
- layer
- antimony
- lead
- recrystallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000008188 pellet Substances 0.000 abstract 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- 229910052787 antimony Inorganic materials 0.000 abstract 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- 229910000679 solder Inorganic materials 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000005868 electrolysis reaction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 238000010422 painting Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,030,443. Transistors. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Feb. 1, 1963 [Feb. 5, 1962], No. 4229/63. Heading H1K. A transistor comprises a germanium body of one conductivity type with a surface diffused layer of opposite conductivity type provided with an ohmic and a rectifying contact, the latter including a recrystallized layer of the one conductivity type with an overlying resolidified mass including lead or bismuth and tin or lead in addition to the impurities determining the conductivity types of the diffused and recrystallized layers. The illustrated embodiment is made from a P-type germanium wafer 1 on which N layer 2 has been formed by diffusion from antimony vapour. Two pellets of lead alloyed with 10 vol. per cent of an alloy of tin containing 2% by weight of antimony are lightly alloyed to the wafer. After painting one pellet 5 with aluminium the assembly is heated in hydrogen and slowly cooled. During this process layer 2 is extended beneath the pellets and recrystallized P and N zones 6, 4 produced immediately below the pellets. The N layer 2 is etched from the opposite face, a nickel layer 8 attached to the exposed P body with indium solder and lead-tin solder-coated nickel wires 7 attached to the pellets. Finally the configuration shown is obtained by etching with the region between the pellets masked. The prediffused N layer may be dispensed with, in which case surface diffusion of the antimony is relied on to provide the N layer between the pellets. In alternative methods the antimony is incorporated in the pellets from the vapour phase during alloying and the impurity for providing P zone 6 may be similarly added immediately before the cooling step. Layers deposited from the vapour phase or by electrolysis may replace the pellets.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL274385 | 1962-02-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1030443A true GB1030443A (en) | 1966-05-25 |
Family
ID=19753589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB422963A Expired GB1030443A (en) | 1962-02-05 | 1963-02-01 | Improvements in and relating to transistors |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT246229B (en) |
| BE (1) | BE627972A (en) |
| CH (1) | CH409151A (en) |
| ES (1) | ES284803A1 (en) |
| GB (1) | GB1030443A (en) |
| NL (1) | NL274385A (en) |
-
0
- NL NL274385D patent/NL274385A/xx unknown
- BE BE627972D patent/BE627972A/xx unknown
-
1963
- 1963-02-01 CH CH125463A patent/CH409151A/en unknown
- 1963-02-01 GB GB422963A patent/GB1030443A/en not_active Expired
- 1963-02-02 ES ES284803A patent/ES284803A1/en not_active Expired
- 1963-02-04 AT AT84763A patent/AT246229B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| BE627972A (en) | |
| ES284803A1 (en) | 1963-07-01 |
| AT246229B (en) | 1966-04-12 |
| NL274385A (en) | |
| CH409151A (en) | 1966-03-15 |
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