ES2542611T3 - Procedimiento de preparación de una película fina absorbente para células fotovoltaicas - Google Patents

Procedimiento de preparación de una película fina absorbente para células fotovoltaicas Download PDF

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Publication number
ES2542611T3
ES2542611T3 ES11713307.4T ES11713307T ES2542611T3 ES 2542611 T3 ES2542611 T3 ES 2542611T3 ES 11713307 T ES11713307 T ES 11713307T ES 2542611 T3 ES2542611 T3 ES 2542611T3
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ES
Spain
Prior art keywords
group
mixture
photovoltaic cells
elements selected
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES11713307.4T
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English (en)
Inventor
Elisabeth Chassaing
Daniel Lincot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electricite de France SA
Centre National de la Recherche Scientifique CNRS
Original Assignee
Electricite de France SA
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electricite de France SA, Centre National de la Recherche Scientifique CNRS filed Critical Electricite de France SA
Application granted granted Critical
Publication of ES2542611T3 publication Critical patent/ES2542611T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Procedimiento de preparación de una película fina absorbente para células fotovoltaicas de tipo A-B-C2 o A2- (Dx,E1-x)-C4 con 0<=x<=1, A es un elemento o una mezcla de elementos seleccionados del grupo 11, B es un elemento o una mezcla de elementos seleccionados del grupo 13, C es un elemento o una mezcla de elementos seleccionados del grupo 16, D es un elemento o una mezcla de elementos seleccionados del grupo 12 y E es un elemento o una mezcla de elementos seleccionados del grupo 14, procedimiento que comprende: - una primera etapa de deposición electroquímica de una película fina de una mezcla de óxidos y/o de hidróxidos que comprende, para una película de tipo A-B-C2, al menos un elemento del grupo 11 y un elemento del grupo 13 o, para una película de tipo A2-(Dx,E1-x)-C4, al menos un elemento del grupo 11, al menos un elemento del grupo 12 si x>0, y al menos un elemento del grupo 14 si x<1, - una segunda etapa de templado de la película fina en una atmósfera reductora, - una tercera etapa de aporte de al menos un elemento del grupo 16, con el objetivo de formar una película fina de tipo A-B-C2 o A2-(Dx,E1-x)-C4 con 0<=x<=1.

Description

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Claims (1)

  1. imagen1
ES11713307.4T 2010-03-11 2011-02-17 Procedimiento de preparación de una película fina absorbente para células fotovoltaicas Active ES2542611T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1051769A FR2957365B1 (fr) 2010-03-11 2010-03-11 Procede de preparation d'une couche mince d'absorbeur pour cellules photovoltaiques
FR1051769 2010-03-11
PCT/FR2011/050345 WO2011110763A1 (fr) 2010-03-11 2011-02-17 Procede de preparation d'une couche mince d'absorbeur pour cellules photovoltaïques

Publications (1)

Publication Number Publication Date
ES2542611T3 true ES2542611T3 (es) 2015-08-07

Family

ID=42664664

Family Applications (1)

Application Number Title Priority Date Filing Date
ES11713307.4T Active ES2542611T3 (es) 2010-03-11 2011-02-17 Procedimiento de preparación de una película fina absorbente para células fotovoltaicas

Country Status (10)

Country Link
US (1) US8920624B2 (es)
EP (1) EP2545209B1 (es)
JP (1) JP5658769B2 (es)
KR (1) KR101426428B1 (es)
CN (1) CN103003475B (es)
AU (1) AU2011225972B2 (es)
CA (1) CA2791373C (es)
ES (1) ES2542611T3 (es)
FR (1) FR2957365B1 (es)
WO (1) WO2011110763A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496452B2 (en) * 2014-10-20 2016-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method of absorber surface repairing by solution process
WO2016104769A1 (ja) * 2014-12-25 2016-06-30 ソーラーフロンティア株式会社 太陽電池の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
DE4103291A1 (de) * 1990-09-22 1992-04-02 Battelle Institut E V Verfahren zur herstellung einer absorberschicht fuer solarzellen mit hilfe galvanischer abscheidetechnik
JP3091599B2 (ja) * 1992-05-19 2000-09-25 松下電器産業株式会社 カルコパイライト型化合物の製造方法
EP0574716B1 (en) * 1992-05-19 1996-08-21 Matsushita Electric Industrial Co., Ltd. Method for preparing chalcopyrite-type compound
JP3089994B2 (ja) 1995-07-26 2000-09-18 矢崎総業株式会社 銅−インジウム−硫黄−セレン薄膜の作製方法、及び銅−インジウム−硫黄−セレン系カルコパイライト結晶の製造方法
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
GB2370282B (en) * 2000-12-16 2003-03-26 Univ Northumbria Newcastle Rapid anodic process for producing chalcopyrite compounds
FR2849532B1 (fr) * 2002-12-26 2005-08-19 Electricite De France Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii
FR2849450B1 (fr) * 2002-12-26 2005-03-11 Electricite De France Procede de regeneration d'un bain d'electrolyse pour la fabrication d'un compose i-iii-vi2 en couches minces
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
CH697007A5 (fr) * 2004-05-03 2008-03-14 Solaronix Sa Procédé pour produire un composé chalcopyrite en couche mince.
WO2007041650A1 (en) * 2005-10-03 2007-04-12 Davis, Joseph And Negley Single bath electrodeposited cu(in,ga)se2 thin films useful as photovoltaic devices

Also Published As

Publication number Publication date
EP2545209B1 (fr) 2015-04-22
KR101426428B1 (ko) 2014-08-06
CA2791373C (fr) 2016-02-02
CA2791373A1 (fr) 2011-09-15
CN103003475B (zh) 2016-08-24
US20130005074A1 (en) 2013-01-03
EP2545209A1 (fr) 2013-01-16
CN103003475A (zh) 2013-03-27
FR2957365A1 (fr) 2011-09-16
KR20130009804A (ko) 2013-01-23
WO2011110763A1 (fr) 2011-09-15
AU2011225972B2 (en) 2013-09-12
US8920624B2 (en) 2014-12-30
JP5658769B2 (ja) 2015-01-28
AU2011225972A1 (en) 2012-11-01
JP2013522867A (ja) 2013-06-13
FR2957365B1 (fr) 2012-04-27

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