ES2184265T3 - Procedimiento y dispositivo de revestimiento por pvd. - Google Patents

Procedimiento y dispositivo de revestimiento por pvd.

Info

Publication number
ES2184265T3
ES2184265T3 ES98924109T ES98924109T ES2184265T3 ES 2184265 T3 ES2184265 T3 ES 2184265T3 ES 98924109 T ES98924109 T ES 98924109T ES 98924109 T ES98924109 T ES 98924109T ES 2184265 T3 ES2184265 T3 ES 2184265T3
Authority
ES
Spain
Prior art keywords
anode
substrate
delivers
voltage
order
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES98924109T
Other languages
English (en)
Inventor
Antonius Leyendecker
Georg Erkens
Bernd Hermeler
Stefan Esser
Hans-Gerd Fuss
Rainer Wenke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cemecon AG
Original Assignee
Cemecon AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19754821A external-priority patent/DE19754821A1/de
Application filed by Cemecon AG filed Critical Cemecon AG
Application granted granted Critical
Publication of ES2184265T3 publication Critical patent/ES2184265T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

La invención se refiere a un procedimiento para revestir PVD y a un dispositivo con una cámara (1) para revestir PVD, en el cual están dispuestos al menos un cátodo blanco (3), al menos un ánodo (2) y al menos un soporte de sustrato (9) que se destina para soportar al menos un sustrato (10), y con un dispositivo de control (4, 6, 7) que entrega una primera tensión con el fin de suministrar al cátodo blanco (3) un potencial eléctrico negativo con relación al ánodo (2) con el fin de formar un plasma (P) en el cual está dispuesto el sustrato (10) y el cual entrega una segunda tensión con el fin de suministrar al ánodo (2) un potencial eléctrico positivo con relación a la pared de la cámara (8). En este dispositivo de revestimiento por pulverización iónica, la fracción iónica del material blanco que puede conseguirse es demasiado baja para satisfacer cualitativamente las propiedades de revestimiento. Se aumenta, según la invención, porque el dispositivo de control (4, 6, 7) entrega una terceratensión que suministra al sustrato (10) una tensión eléctrica que es más negativa que la tensión del ánodo (2).
ES98924109T 1997-04-14 1998-04-09 Procedimiento y dispositivo de revestimiento por pvd. Expired - Lifetime ES2184265T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19715535 1997-04-14
DE19754821A DE19754821A1 (de) 1997-04-14 1997-12-10 Verfahren und Vorrichtung für eine PVD-Beschichtung

Publications (1)

Publication Number Publication Date
ES2184265T3 true ES2184265T3 (es) 2003-04-01

Family

ID=26035759

Family Applications (1)

Application Number Title Priority Date Filing Date
ES98924109T Expired - Lifetime ES2184265T3 (es) 1997-04-14 1998-04-09 Procedimiento y dispositivo de revestimiento por pvd.

Country Status (6)

Country Link
US (1) US6352627B2 (es)
EP (1) EP0975818B1 (es)
AT (1) ATE224963T1 (es)
DK (1) DK0975818T3 (es)
ES (1) ES2184265T3 (es)
WO (1) WO1998046807A1 (es)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423750B2 (en) * 2001-11-29 2008-09-09 Applera Corporation Configurations, systems, and methods for optical scanning with at least one first relative angular motion and at least one second angular motion or at least one linear motion
US6488822B1 (en) * 2000-10-20 2002-12-03 Veecoleve, Inc. Segmented-target ionized physical-vapor deposition apparatus and method of operation
US7244519B2 (en) 2004-08-20 2007-07-17 Tdy Industries, Inc. PVD coated ruthenium featured cutting tools
DE102005033769B4 (de) * 2005-07-15 2009-10-22 Systec System- Und Anlagentechnik Gmbh & Co.Kg Verfahren und Vorrichtung zur Mehrkathoden-PVD-Beschichtung und Substrat mit PVD-Beschichtung
DE102006020004B4 (de) * 2006-04-26 2011-06-01 Systec System- Und Anlagentechnik Gmbh & Co.Kg Vorrichtung und Verfahren zur homogenen PVD-Beschichtung
GB0608582D0 (en) * 2006-05-02 2006-06-07 Univ Sheffield Hallam High power impulse magnetron sputtering vapour deposition
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
DE102006058078A1 (de) * 2006-12-07 2008-06-19 Systec System- Und Anlagentechnik Gmbh & Co. Kg Vakuumbeschichtungsanlage zur homogenen PVD-Beschichtung
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US8512882B2 (en) * 2007-02-19 2013-08-20 TDY Industries, LLC Carbide cutting insert
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
US8691057B2 (en) * 2008-03-25 2014-04-08 Oem Group Stress adjustment in reactive sputtering
JP5448232B2 (ja) * 2008-04-28 2014-03-19 コムコン・アーゲー 物体を前処理及びコーテイングするための装置及び方法
US9175381B2 (en) * 2008-07-09 2015-11-03 Southwest Research Institute Processing tubular surfaces using double glow discharge
EP2159820B1 (en) 2008-08-25 2018-04-11 Oerlikon Surface Solutions AG, Pfäffikon A physical vapour deposition coating device as well as a physical vapour deposition method
DE102008050499B4 (de) 2008-10-07 2014-02-06 Systec System- Und Anlagentechnik Gmbh & Co. Kg PVD-Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens und nach dem Verfahren beschichtete Substrate
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
US8440314B2 (en) * 2009-08-25 2013-05-14 TDY Industries, LLC Coated cutting tools having a platinum group metal concentration gradient and related processes
DE202010001497U1 (de) * 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
US8821701B2 (en) 2010-06-02 2014-09-02 Clifton Higdon Ion beam sputter target and method of manufacture
US8753725B2 (en) 2011-03-11 2014-06-17 Southwest Research Institute Method for plasma immersion ion processing and depositing coatings in hollow substrates using a heated center electrode
DE102014115492A1 (de) 2014-10-24 2016-04-28 Cemecon Ag Verfahren und Vorrichtung zur Erzeugung einer elektronischen Entladung
DE102021104255A1 (de) 2021-02-23 2022-08-25 Cemecon Ag. Zerstäubungstarget

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3410775A (en) * 1966-04-14 1968-11-12 Bell Telephone Labor Inc Electrostatic control of electron movement in cathode sputtering
DE3611492A1 (de) * 1986-04-05 1987-10-22 Leybold Heraeus Gmbh & Co Kg Verfahren und vorrichtung zum beschichten von werkzeugen fuer die zerspanungs- und umformtechnik mit hartstoffschichten
DE3709175A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zum aufstaeuben hochohmiger schichten durch katodenzerstaeubung
KR970002340B1 (ko) * 1988-07-15 1997-03-03 미쓰비시 가세이 가부시끼가이샤 자기 기록 매체의 제조방법
JPH02217467A (ja) * 1989-02-17 1990-08-30 Pioneer Electron Corp 対向ターゲット型スパッタリング装置
ATE101661T1 (de) 1989-06-27 1994-03-15 Hauzer Holding Verfahren und vorrichtung zur beschichtung von substraten.
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
DE69329161T2 (de) * 1992-02-27 2001-01-11 Hauzer Industries B.V., Venlo Verbesserungen von Verfahren der physikalischen Dampfphasen-Abscheidung
JPH08505437A (ja) * 1992-12-30 1996-06-11 ナウチノ−プロイズボドストヴェノーエ・プレドプリェティエ・“ノヴァテク” 下地の真空プラズマ処理のための装置

Also Published As

Publication number Publication date
US6352627B2 (en) 2002-03-05
US20010009225A1 (en) 2001-07-26
EP0975818A1 (en) 2000-02-02
EP0975818B1 (en) 2002-09-25
DK0975818T3 (da) 2003-01-06
ATE224963T1 (de) 2002-10-15
WO1998046807A1 (en) 1998-10-22

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