ATE224963T1 - Verfahren und vorrichtung für pvd beschichtung - Google Patents

Verfahren und vorrichtung für pvd beschichtung

Info

Publication number
ATE224963T1
ATE224963T1 AT98924109T AT98924109T ATE224963T1 AT E224963 T1 ATE224963 T1 AT E224963T1 AT 98924109 T AT98924109 T AT 98924109T AT 98924109 T AT98924109 T AT 98924109T AT E224963 T1 ATE224963 T1 AT E224963T1
Authority
AT
Austria
Prior art keywords
anode
substrate
delivers
voltage
order
Prior art date
Application number
AT98924109T
Other languages
English (en)
Inventor
Antonius Leyendecker
Georg Erkens
Bernd Hermeler
Stefan Esser
Hans-Gerd Fuss
Rainer Wenke
Original Assignee
Cemecon Ceramic Metal Coatings
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19754821A external-priority patent/DE19754821A1/de
Application filed by Cemecon Ceramic Metal Coatings filed Critical Cemecon Ceramic Metal Coatings
Application granted granted Critical
Publication of ATE224963T1 publication Critical patent/ATE224963T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT98924109T 1997-04-14 1998-04-09 Verfahren und vorrichtung für pvd beschichtung ATE224963T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19715535 1997-04-14
DE19754821A DE19754821A1 (de) 1997-04-14 1997-12-10 Verfahren und Vorrichtung für eine PVD-Beschichtung
PCT/EP1998/002100 WO1998046807A1 (en) 1997-04-14 1998-04-09 Method and device for pvd coating

Publications (1)

Publication Number Publication Date
ATE224963T1 true ATE224963T1 (de) 2002-10-15

Family

ID=26035759

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98924109T ATE224963T1 (de) 1997-04-14 1998-04-09 Verfahren und vorrichtung für pvd beschichtung

Country Status (6)

Country Link
US (1) US6352627B2 (de)
EP (1) EP0975818B1 (de)
AT (1) ATE224963T1 (de)
DK (1) DK0975818T3 (de)
ES (1) ES2184265T3 (de)
WO (1) WO1998046807A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423750B2 (en) * 2001-11-29 2008-09-09 Applera Corporation Configurations, systems, and methods for optical scanning with at least one first relative angular motion and at least one second angular motion or at least one linear motion
US6488822B1 (en) * 2000-10-20 2002-12-03 Veecoleve, Inc. Segmented-target ionized physical-vapor deposition apparatus and method of operation
US7244519B2 (en) 2004-08-20 2007-07-17 Tdy Industries, Inc. PVD coated ruthenium featured cutting tools
DE102005033769B4 (de) * 2005-07-15 2009-10-22 Systec System- Und Anlagentechnik Gmbh & Co.Kg Verfahren und Vorrichtung zur Mehrkathoden-PVD-Beschichtung und Substrat mit PVD-Beschichtung
DE102006020004B4 (de) * 2006-04-26 2011-06-01 Systec System- Und Anlagentechnik Gmbh & Co.Kg Vorrichtung und Verfahren zur homogenen PVD-Beschichtung
GB0608582D0 (en) * 2006-05-02 2006-06-07 Univ Sheffield Hallam High power impulse magnetron sputtering vapour deposition
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
DE102006058078A1 (de) * 2006-12-07 2008-06-19 Systec System- Und Anlagentechnik Gmbh & Co. Kg Vakuumbeschichtungsanlage zur homogenen PVD-Beschichtung
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US8512882B2 (en) * 2007-02-19 2013-08-20 TDY Industries, LLC Carbide cutting insert
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
CN102027564B (zh) * 2008-04-28 2013-05-22 塞梅孔公司 对物体进行预处理和涂覆的装置和方法
US9175381B2 (en) * 2008-07-09 2015-11-03 Southwest Research Institute Processing tubular surfaces using double glow discharge
EP2159820B1 (de) 2008-08-25 2018-04-11 Oerlikon Surface Solutions AG, Pfäffikon Vorrichtung zur Beschichtung durch Ablagerung physikalischer Dämpfe sowie Verfahren zur Ablagerung physikalischer Dämpfe
DE102008050499B4 (de) 2008-10-07 2014-02-06 Systec System- Und Anlagentechnik Gmbh & Co. Kg PVD-Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens und nach dem Verfahren beschichtete Substrate
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
US8440314B2 (en) * 2009-08-25 2013-05-14 TDY Industries, LLC Coated cutting tools having a platinum group metal concentration gradient and related processes
DE202010001497U1 (de) * 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
US8821701B2 (en) 2010-06-02 2014-09-02 Clifton Higdon Ion beam sputter target and method of manufacture
US8753725B2 (en) 2011-03-11 2014-06-17 Southwest Research Institute Method for plasma immersion ion processing and depositing coatings in hollow substrates using a heated center electrode
DE102014115492A1 (de) 2014-10-24 2016-04-28 Cemecon Ag Verfahren und Vorrichtung zur Erzeugung einer elektronischen Entladung
DE102021104255A1 (de) 2021-02-23 2022-08-25 Cemecon Ag. Zerstäubungstarget

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3410775A (en) * 1966-04-14 1968-11-12 Bell Telephone Labor Inc Electrostatic control of electron movement in cathode sputtering
DE3611492A1 (de) * 1986-04-05 1987-10-22 Leybold Heraeus Gmbh & Co Kg Verfahren und vorrichtung zum beschichten von werkzeugen fuer die zerspanungs- und umformtechnik mit hartstoffschichten
DE3709175A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zum aufstaeuben hochohmiger schichten durch katodenzerstaeubung
KR970002340B1 (ko) * 1988-07-15 1997-03-03 미쓰비시 가세이 가부시끼가이샤 자기 기록 매체의 제조방법
JPH02217467A (ja) * 1989-02-17 1990-08-30 Pioneer Electron Corp 対向ターゲット型スパッタリング装置
EP0439561B1 (de) 1989-06-27 1994-02-16 Hauzer Holding B.V. Verfahren und vorrichtung zur beschichtung von substraten
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
ATE195354T1 (de) 1992-02-27 2000-08-15 Hauzer Ind Bv Verbesserungen von verfahren der physikalischen dampfphasen-abscheidung
WO1994016117A1 (en) * 1992-12-30 1994-07-21 Nauchno-Proizvodstvennoe Predpriyatie 'novatekh' Device for the vacuum-plasma treatment of articles

Also Published As

Publication number Publication date
EP0975818B1 (de) 2002-09-25
DK0975818T3 (da) 2003-01-06
US6352627B2 (en) 2002-03-05
WO1998046807A1 (en) 1998-10-22
ES2184265T3 (es) 2003-04-01
US20010009225A1 (en) 2001-07-26
EP0975818A1 (de) 2000-02-02

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