ES2182559T3 - Produccion de polvo monocristalino y de una membrana monograno. - Google Patents

Produccion de polvo monocristalino y de una membrana monograno.

Info

Publication number
ES2182559T3
ES2182559T3 ES99939958T ES99939958T ES2182559T3 ES 2182559 T3 ES2182559 T3 ES 2182559T3 ES 99939958 T ES99939958 T ES 99939958T ES 99939958 T ES99939958 T ES 99939958T ES 2182559 T3 ES2182559 T3 ES 2182559T3
Authority
ES
Spain
Prior art keywords
melt
powder grains
quenching
monocrystalline
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES99939958T
Other languages
English (en)
Inventor
Dieter Meissner
Enn Mellikov
Mare Altosaar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Application granted granted Critical
Publication of ES2182559T3 publication Critical patent/ES2182559T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Medicinal Preparation (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Procedimiento para la producción de un polvo monocristalino, que está constituido de material semiconductor, que comprende un sistema multisubstancia de al menos tres componentes, donde un componente es un elemento del grupo 11º IUPAC, con las etapas: a) se mezclan los componentes correspondientes del material semiconductor o sus sales con un fundente; b) se ajusta una temperatura, que está por encima del punto de fusión del fundente y por debajo del punto de fusión del polvo monocristalino a producir; c) se separa por cristalización el polvo monocristalino; d) se refrigera la colada, con objeto de la interrupción del crecimiento del polvo monocristalino.
ES99939958T 1998-06-25 1999-06-23 Produccion de polvo monocristalino y de una membrana monograno. Expired - Lifetime ES2182559T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19828310A DE19828310C2 (de) 1998-06-25 1998-06-25 Einkristallpulver- und Monokornmembranherstellung

Publications (1)

Publication Number Publication Date
ES2182559T3 true ES2182559T3 (es) 2003-03-01

Family

ID=7871979

Family Applications (1)

Application Number Title Priority Date Filing Date
ES99939958T Expired - Lifetime ES2182559T3 (es) 1998-06-25 1999-06-23 Produccion de polvo monocristalino y de una membrana monograno.

Country Status (8)

Country Link
US (1) US6488770B1 (es)
EP (1) EP1097262B1 (es)
JP (1) JP4530192B2 (es)
AT (1) ATE222613T1 (es)
DE (2) DE19828310C2 (es)
DK (1) DK1097262T3 (es)
ES (1) ES2182559T3 (es)
WO (1) WO1999067449A1 (es)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039291A1 (en) * 1999-03-26 2000-09-27 Sony International (Europe) GmbH Optochemical sensor and method for its construction
AT410803B (de) * 2001-09-27 2003-08-25 Voest Alpine Ind Anlagen Verfahren zur reduktion von metallhältigem, insbesondere eisenerzhältigem, teilchenförmigem material
ATE319868T1 (de) * 2003-12-22 2006-03-15 Scheuten Glasgroep Bv Verfahren zur herstellung von cu(in,ga)se2 einkristallinem pulver und monokornmembran- solarzelle enthaltend dieses pulver
PT1548845E (pt) * 2003-12-22 2007-03-30 Scheuten Glasgroep B V Processo para tratar partículas de pó
US7569462B2 (en) * 2006-12-13 2009-08-04 Applied Materials, Inc. Directional crystallization of silicon sheets using rapid thermal processing
DE102008040147A1 (de) * 2008-07-03 2010-01-28 Crystalsol Og Verfahren zur Herstellung einer Monokornmembran für eine Solarzelle sowie Monokornmembran nebst Solarzelle
DE202008009492U1 (de) * 2008-07-15 2009-11-26 Tallinn University Of Technology Halbleitermaterial und dessen Verwendung als Absorptionsmaterial für Solarzellen
JP2011091132A (ja) * 2009-10-21 2011-05-06 Fujifilm Corp 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池
US8414862B2 (en) 2009-11-25 2013-04-09 E I Du Pont De Nemours And Company Preparation of CZTS and its analogs in ionic liquids
JP2011204825A (ja) 2010-03-25 2011-10-13 Fujifilm Corp 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池
US20130118585A1 (en) * 2010-06-22 2013-05-16 University Of Florida Research Foundation, Inc. Nanocrystalline copper indium diselenide (cis) and ink-based alloys absorber layers for solar cells
US8709657B2 (en) 2010-12-09 2014-04-29 E I Du Pont De Nemours And Company Quaternary chalcogenide wafers
US8480944B2 (en) 2010-12-09 2013-07-09 E I Du Pont De Nemours And Company Quaternary chalcogenide wafers
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US10529883B2 (en) * 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3174823A (en) 1961-12-15 1965-03-23 Kopelman Bernard Process for producing crystals of zn, cd and pb sulfides, selenides and tellurides
NL6901662A (es) 1969-02-01 1970-08-04
JPS50152684A (es) * 1974-05-27 1975-12-08
JPS50152683A (es) * 1974-05-27 1975-12-08
JPS5120081A (en) * 1974-08-12 1976-02-17 Hitachi Ltd Ketsushoseichohoho oyobi sochi
JPS53112493A (en) * 1977-03-14 1978-09-30 Nat Res Inst Metals Method of manufacturing ferromagnetic semiconductor monocrystal
IL75703A0 (en) 1984-07-27 1985-11-29 Hahn Meitner Kernforsch Semiconductor layer of transition metal dichalcogenide,method for its manufacture and use as solar cell
US4921531A (en) 1984-10-19 1990-05-01 Martin Marietta Corporation Process for forming fine ceramic powders
EP0211187A3 (en) * 1985-06-28 1989-01-11 Kabushiki Kaisha Toshiba Process for producing single crystal of garnet ferrite
JPH08505350A (ja) 1987-11-30 1996-06-11 マーチン・マリエッタ・コーポレーション 微細セラミックス粉末の鍛造方法及びその生成物
US5436204A (en) * 1993-04-12 1995-07-25 Midwest Research Institute Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications
CN1038352C (zh) * 1994-04-15 1998-05-13 中国科学院福建物质结构研究所 新型非线性光学晶体硼铍酸锶
JP3876473B2 (ja) * 1996-06-04 2007-01-31 住友電気工業株式会社 窒化物単結晶及びその製造方法

Also Published As

Publication number Publication date
DE19828310C2 (de) 2000-08-31
EP1097262B1 (de) 2002-08-21
JP2002519273A (ja) 2002-07-02
DE19828310A1 (de) 1999-12-30
DK1097262T3 (da) 2002-12-23
DE59902420D1 (de) 2002-09-26
EP1097262A1 (de) 2001-05-09
WO1999067449A1 (de) 1999-12-29
US6488770B1 (en) 2002-12-03
ATE222613T1 (de) 2002-09-15
JP4530192B2 (ja) 2010-08-25

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