ES2079142T3 - Dispositivo de pantalla plana de emision por campo con control integral. - Google Patents
Dispositivo de pantalla plana de emision por campo con control integral.Info
- Publication number
- ES2079142T3 ES2079142T3 ES92300493T ES92300493T ES2079142T3 ES 2079142 T3 ES2079142 T3 ES 2079142T3 ES 92300493 T ES92300493 T ES 92300493T ES 92300493 T ES92300493 T ES 92300493T ES 2079142 T3 ES2079142 T3 ES 2079142T3
- Authority
- ES
- Spain
- Prior art keywords
- field emission
- display device
- fed display
- flat display
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/481—Electron guns using field-emission, photo-emission, or secondary-emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Circuits Of Receivers In General (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
SE DESCRIBE UN DISPOSITIVO DE PRESENTACION DE EMISION POR CAMPO CON CONTROL INTEGRADO FED(FIELD EMISSION DISPLAY), DONDE COMO MINIMO, ESTA PREVISTO UN REGULADOR DE MANDO (404, 406, 408), QUE OPERA COMO DISPOSITIVO TRANSISTOR ACOPLADO EN/SOBRE, UN CONDUCTOR DE INDICACION DE FED, QUE ACTUA AL SER CONECTADO AL MENOS A UN ELEMENTO DE LOS DISPOSITIVOS DE EMISION POR CAMPO (322, 316) DEL FED. UNA SERIE DE REGULADORES INTEGRADOS PUEDEN SER INTERCONECTADOS SELECTIVAMENTE PARA PROPORCIONAR LA SELECCION DEL CONTROL DE LOS GRUPOS DE FED, DEL CUADRO DE FED, DE TAL FORMA QUE FACILITE LA DIRECCION INTEGRADA ACTIVA DEL MARCO FED(PRESENTACION DE EMISION POR CAMPO).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/645,163 US5212426A (en) | 1991-01-24 | 1991-01-24 | Integrally controlled field emission flat display device |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2079142T3 true ES2079142T3 (es) | 1996-01-01 |
Family
ID=24587869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92300493T Expired - Lifetime ES2079142T3 (es) | 1991-01-24 | 1992-01-21 | Dispositivo de pantalla plana de emision por campo con control integral. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5212426A (es) |
EP (1) | EP0496572B1 (es) |
JP (1) | JPH0567441A (es) |
AT (1) | ATE130702T1 (es) |
DE (1) | DE69206160T2 (es) |
DK (1) | DK0496572T3 (es) |
ES (1) | ES2079142T3 (es) |
GR (1) | GR3018478T3 (es) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347201A (en) * | 1991-02-25 | 1994-09-13 | Panocorp Display Systems | Display device |
US5536193A (en) | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
JPH05182609A (ja) * | 1991-12-27 | 1993-07-23 | Sharp Corp | 画像表示装置 |
US5449970A (en) | 1992-03-16 | 1995-09-12 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5679043A (en) | 1992-03-16 | 1997-10-21 | Microelectronics And Computer Technology Corporation | Method of making a field emitter |
US5763997A (en) | 1992-03-16 | 1998-06-09 | Si Diamond Technology, Inc. | Field emission display device |
US6127773A (en) | 1992-03-16 | 2000-10-03 | Si Diamond Technology, Inc. | Amorphic diamond film flat field emission cathode |
US5675216A (en) | 1992-03-16 | 1997-10-07 | Microelectronics And Computer Technololgy Corp. | Amorphic diamond film flat field emission cathode |
US5543684A (en) | 1992-03-16 | 1996-08-06 | Microelectronics And Computer Technology Corporation | Flat panel display based on diamond thin films |
US5686791A (en) | 1992-03-16 | 1997-11-11 | Microelectronics And Computer Technology Corp. | Amorphic diamond film flat field emission cathode |
JP2669749B2 (ja) * | 1992-03-27 | 1997-10-29 | 工業技術院長 | 電界放出素子 |
JP2661457B2 (ja) * | 1992-03-31 | 1997-10-08 | 双葉電子工業株式会社 | 電界放出形カソード |
US5616991A (en) * | 1992-04-07 | 1997-04-01 | Micron Technology, Inc. | Flat panel display in which low-voltage row and column address signals control a much higher pixel activation voltage |
FR2698992B1 (fr) * | 1992-12-04 | 1995-03-17 | Pixel Int Sa | Ecran plat à micropointes protégées individuellement par dipôle. |
US5404081A (en) * | 1993-01-22 | 1995-04-04 | Motorola, Inc. | Field emission device with switch and current source in the emitter circuit |
DE69407015T2 (de) * | 1993-09-20 | 1998-03-19 | Hewlett Packard Co | Fokussier- und Ablenkelektroden für Elektronenquellen |
US5340997A (en) * | 1993-09-20 | 1994-08-23 | Hewlett-Packard Company | Electrostatically shielded field emission microelectronic device |
JP2861755B2 (ja) * | 1993-10-28 | 1999-02-24 | 日本電気株式会社 | 電界放出型陰極装置 |
CN1134754A (zh) | 1993-11-04 | 1996-10-30 | 微电子及计算机技术公司 | 制作平板显示系统和元件的方法 |
US6204834B1 (en) | 1994-08-17 | 2001-03-20 | Si Diamond Technology, Inc. | System and method for achieving uniform screen brightness within a matrix display |
US5531880A (en) * | 1994-09-13 | 1996-07-02 | Microelectronics And Computer Technology Corporation | Method for producing thin, uniform powder phosphor for display screens |
TW289864B (es) * | 1994-09-16 | 1996-11-01 | Micron Display Tech Inc | |
US5975975A (en) * | 1994-09-16 | 1999-11-02 | Micron Technology, Inc. | Apparatus and method for stabilization of threshold voltage in field emission displays |
US6417605B1 (en) | 1994-09-16 | 2002-07-09 | Micron Technology, Inc. | Method of preventing junction leakage in field emission devices |
US5920296A (en) * | 1995-02-01 | 1999-07-06 | Pixel International | Flat screen having individually dipole-protected microdots |
US5628659A (en) * | 1995-04-24 | 1997-05-13 | Microelectronics And Computer Corporation | Method of making a field emission electron source with random micro-tip structures |
US6296740B1 (en) | 1995-04-24 | 2001-10-02 | Si Diamond Technology, Inc. | Pretreatment process for a surface texturing process |
US5585301A (en) * | 1995-07-14 | 1996-12-17 | Micron Display Technology, Inc. | Method for forming high resistance resistors for limiting cathode current in field emission displays |
US5721560A (en) * | 1995-07-28 | 1998-02-24 | Micron Display Technology, Inc. | Field emission control including different RC time constants for display screen and grid |
US5910791A (en) | 1995-07-28 | 1999-06-08 | Micron Technology, Inc. | Method and circuit for reducing emission to grid in field emission displays |
EP0757341B1 (en) * | 1995-08-01 | 2003-06-04 | STMicroelectronics S.r.l. | Limiting and selfuniforming cathode currents through the microtips of a field emission flat panel display |
US5663742A (en) * | 1995-08-21 | 1997-09-02 | Micron Display Technology, Inc. | Compressed field emission display |
US5610667A (en) * | 1995-08-24 | 1997-03-11 | Micron Display Technology, Inc. | Apparatus and method for maintaining synchronism between a picture signal and a matrix scanned array |
US5635988A (en) * | 1995-08-24 | 1997-06-03 | Micron Display Technology, Inc. | Apparatus and method for maintaining synchronism between a picture signal and a matrix scanned array |
JP3135823B2 (ja) * | 1995-08-25 | 2001-02-19 | 株式会社神戸製鋼所 | 冷電子放出素子及びその製造方法 |
JP2782587B2 (ja) * | 1995-08-25 | 1998-08-06 | 工業技術院長 | 冷電子放出素子 |
US5773927A (en) | 1995-08-30 | 1998-06-30 | Micron Display Technology, Inc. | Field emission display device with focusing electrodes at the anode and method for constructing same |
KR100201552B1 (ko) * | 1995-09-25 | 1999-06-15 | 하제준 | 엠오에스에프이티를 일체화한 전계방출 어레이 및 그 제조방법 |
KR100201553B1 (ko) * | 1995-09-25 | 1999-06-15 | 하제준 | Mosfet를 일체화한 전계방출 어레이의 구조 및 그 제조 방법 |
US5656892A (en) * | 1995-11-17 | 1997-08-12 | Micron Display Technology, Inc. | Field emission display having emitter control with current sensing feedback |
KR100211945B1 (ko) * | 1995-12-20 | 1999-08-02 | 정선종 | 광게이트 트랜지스터를 이용한 mux 및 demux 회로 |
US5656886A (en) * | 1995-12-29 | 1997-08-12 | Micron Display Technology, Inc. | Technique to improve uniformity of large area field emission displays |
US5742267A (en) * | 1996-01-05 | 1998-04-21 | Micron Display Technology, Inc. | Capacitive charge driver circuit for flat panel display |
US5641706A (en) * | 1996-01-18 | 1997-06-24 | Micron Display Technology, Inc. | Method for formation of a self-aligned N-well for isolated field emission devices |
US6117294A (en) | 1996-01-19 | 2000-09-12 | Micron Technology, Inc. | Black matrix material and methods related thereto |
US5762773A (en) | 1996-01-19 | 1998-06-09 | Micron Display Technology, Inc. | Method and system for manufacture of field emission display |
WO1997042644A1 (en) * | 1996-05-03 | 1997-11-13 | Micron Technology, Inc. | Shielded field emission display |
US5844370A (en) | 1996-09-04 | 1998-12-01 | Micron Technology, Inc. | Matrix addressable display with electrostatic discharge protection |
US5854615A (en) * | 1996-10-03 | 1998-12-29 | Micron Display Technology, Inc. | Matrix addressable display with delay locked loop controller |
US5909200A (en) * | 1996-10-04 | 1999-06-01 | Micron Technology, Inc. | Temperature compensated matrix addressable display |
US6010917A (en) * | 1996-10-15 | 2000-01-04 | Micron Technology, Inc. | Electrically isolated interconnects and conductive layers in semiconductor device manufacturing |
US6015323A (en) * | 1997-01-03 | 2000-01-18 | Micron Technology, Inc. | Field emission display cathode assembly government rights |
US5952771A (en) * | 1997-01-07 | 1999-09-14 | Micron Technology, Inc. | Micropoint switch for use with field emission display and method for making same |
US5945968A (en) * | 1997-01-07 | 1999-08-31 | Micron Technology, Inc. | Matrix addressable display having pulsed current control |
US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
US6207392B1 (en) | 1997-11-25 | 2001-03-27 | The Regents Of The University Of California | Semiconductor nanocrystal probes for biological applications and process for making and using such probes |
US6326725B1 (en) | 1998-05-26 | 2001-12-04 | Micron Technology, Inc. | Focusing electrode for field emission displays and method |
US6864626B1 (en) * | 1998-06-03 | 2005-03-08 | The Regents Of The University Of California | Electronic displays using optically pumped luminescent semiconductor nanocrystals |
US20050146258A1 (en) * | 1999-06-02 | 2005-07-07 | Shimon Weiss | Electronic displays using optically pumped luminescent semiconductor nanocrystals |
HUP0103631A3 (en) | 1998-06-11 | 2004-07-28 | Kolarik Vladimir | Planar electron emitter (pee) |
US6190223B1 (en) | 1998-07-02 | 2001-02-20 | Micron Technology, Inc. | Method of manufacture of composite self-aligned extraction grid and in-plane focusing ring |
US6278229B1 (en) | 1998-07-29 | 2001-08-21 | Micron Technology, Inc. | Field emission displays having a light-blocking layer in the extraction grid |
US6176752B1 (en) | 1998-09-10 | 2001-01-23 | Micron Technology, Inc. | Baseplate and a method for manufacturing a baseplate for a field emission display |
JP3139476B2 (ja) | 1998-11-06 | 2001-02-26 | 日本電気株式会社 | 電界放出型冷陰極 |
US6504291B1 (en) * | 1999-02-23 | 2003-01-07 | Micron Technology, Inc. | Focusing electrode and method for field emission displays |
US6344378B1 (en) * | 1999-03-01 | 2002-02-05 | Micron Technology, Inc. | Field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors |
JP2000260299A (ja) * | 1999-03-09 | 2000-09-22 | Matsushita Electric Ind Co Ltd | 冷電子放出素子及びその製造方法 |
US6507328B1 (en) * | 1999-05-06 | 2003-01-14 | Micron Technology, Inc. | Thermoelectric control for field emission display |
US6441542B1 (en) | 1999-07-21 | 2002-08-27 | Micron Technology, Inc. | Cathode emitter devices, field emission display devices, and methods of detecting infrared light |
US6469436B1 (en) * | 2000-01-14 | 2002-10-22 | Micron Technology, Inc. | Radiation shielding for field emitters |
SG171893A1 (en) | 2008-12-04 | 2011-07-28 | Univerity Of California | Electron injection nanostructured semiconductor material anode electroluminescence method and device |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3789471A (en) * | 1970-02-06 | 1974-02-05 | Stanford Research Inst | Field emission cathode structures, devices utilizing such structures, and methods of producing such structures |
US3755704A (en) * | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
US3812559A (en) * | 1970-07-13 | 1974-05-28 | Stanford Research Inst | Methods of producing field ionizer and field emission cathode structures |
SU855782A1 (ru) * | 1977-06-28 | 1981-08-15 | Предприятие П/Я Г-4468 | Эмиттер электронов |
NL184589C (nl) * | 1979-07-13 | 1989-09-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
JPS58140781A (ja) * | 1982-02-17 | 1983-08-20 | 株式会社日立製作所 | 画像表示装置 |
DE3243596C2 (de) * | 1982-11-25 | 1985-09-26 | M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München | Verfahren und Vorrichtung zur Übertragung von Bildern auf einen Bildschirm |
FR2568394B1 (fr) * | 1984-07-27 | 1988-02-12 | Commissariat Energie Atomique | Dispositif de visualisation par cathodoluminescence excitee par emission de champ |
GB8621600D0 (en) * | 1986-09-08 | 1987-03-18 | Gen Electric Co Plc | Vacuum devices |
FR2604823B1 (fr) * | 1986-10-02 | 1995-04-07 | Etude Surfaces Lab | Dispositif emetteur d'electrons et son application notamment a la realisation d'ecrans plats de television |
US4721885A (en) * | 1987-02-11 | 1988-01-26 | Sri International | Very high speed integrated microelectronic tubes |
GB2204991B (en) * | 1987-05-18 | 1991-10-02 | Gen Electric Plc | Vacuum electronic devices |
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US4874981A (en) * | 1988-05-10 | 1989-10-17 | Sri International | Automatically focusing field emission electrode |
JPH02309541A (ja) * | 1989-05-23 | 1990-12-25 | Seiko Epson Corp | 蛍光表示装置 |
US5007873A (en) * | 1990-02-09 | 1991-04-16 | Motorola, Inc. | Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process |
JP2656843B2 (ja) * | 1990-04-12 | 1997-09-24 | 双葉電子工業株式会社 | 表示装置 |
-
1991
- 1991-01-24 US US07/645,163 patent/US5212426A/en not_active Expired - Fee Related
-
1992
- 1992-01-21 EP EP92300493A patent/EP0496572B1/en not_active Expired - Lifetime
- 1992-01-21 DE DE69206160T patent/DE69206160T2/de not_active Expired - Fee Related
- 1992-01-21 AT AT92300493T patent/ATE130702T1/de not_active IP Right Cessation
- 1992-01-21 DK DK92300493.1T patent/DK0496572T3/da active
- 1992-01-21 ES ES92300493T patent/ES2079142T3/es not_active Expired - Lifetime
- 1992-01-22 JP JP4031599A patent/JPH0567441A/ja active Pending
-
1995
- 1995-12-20 GR GR950403618T patent/GR3018478T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
JPH0567441A (ja) | 1993-03-19 |
DK0496572T3 (da) | 1996-02-19 |
DE69206160D1 (de) | 1996-01-04 |
GR3018478T3 (en) | 1996-03-31 |
EP0496572A1 (en) | 1992-07-29 |
ATE130702T1 (de) | 1995-12-15 |
DE69206160T2 (de) | 1996-06-05 |
US5212426A (en) | 1993-05-18 |
EP0496572B1 (en) | 1995-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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