ES2051905T3 - Conmutador mos bidireccional. - Google Patents

Conmutador mos bidireccional.

Info

Publication number
ES2051905T3
ES2051905T3 ES89103368T ES89103368T ES2051905T3 ES 2051905 T3 ES2051905 T3 ES 2051905T3 ES 89103368 T ES89103368 T ES 89103368T ES 89103368 T ES89103368 T ES 89103368T ES 2051905 T3 ES2051905 T3 ES 2051905T3
Authority
ES
Spain
Prior art keywords
switch
contact regions
doped layer
weakly doped
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES89103368T
Other languages
English (en)
Inventor
Per Svedberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB AB
Original Assignee
Asea Brown Boveri AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri AB filed Critical Asea Brown Boveri AB
Application granted granted Critical
Publication of ES2051905T3 publication Critical patent/ES2051905T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electronic Switches (AREA)
  • Switches With Compound Operations (AREA)
  • Liquid Crystal (AREA)

Abstract

SE PRODUCE UN INTERRUPTOR MOS BIDIRECCIONAL EN UNA CAPA SEMICONDUCTORA (2) (POR EJEMPLO, SILICE) DISPUESTA SOBRE UNA BASE AISLANTE (1) (POR EJEMPLO ZAFIRO). EL INTERRUPTOR TIENE DOS PARTES DE CONTACTO PRINCIPALES IMPURIFICADAS (3A,3B). ENTRE ESTAS REGIONES EL INTERRUPTOR TIENE UNA PARTE ABSORBENTE DE VOLTAJE QUE CONSTA DE UNA PACA DEBILMENTE IMPURIFICADA (5), SITUADA CERCA DE LA SUPERFICIE DE LA CAPA SEMICONDUCTORA, QUE TIENE EL MISMO TIPO DE CONDUCTIVIDAD QUE LAS PARTES DE CONTACTO PRINCIPALES, Y UNA CAPA DEBILMENTE IMPURIFICADA (4) SITUADA CERCA DE LA BASE, DE TIPO DE CONDUCTIVIDAD OPUESTO. ENTRE CADA UNA DE LAS ZONAS DE CONTACTO (3A,3B) Y LA CAPA DEBILEMNTE IMPURIFICADA (5) SITUADAS CERCA DE LA SUPERFICIE, SE HALLAN DISPUESTAS NORMALMENTE UNAS ESTRUCTURAS MOS NO CONDUCTORAS. CONTROLANDO SIMULTANEAMENTE LAS DOS ESTRUCTURAS MOS HACIA UN ESTADO CONDUCTOR, EL INTERRUPTOR SE HACE CONDUCTOR Y PUEDE LLEVAR CORRIENTE HACIA UNA DIRECCION OPCIONAL ENTRE LOS CONTACTOS PRINCIPALES.
ES89103368T 1988-02-29 1989-02-25 Conmutador mos bidireccional. Expired - Lifetime ES2051905T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8800696A SE460448B (sv) 1988-02-29 1988-02-29 Dubbelriktad mos-switch

Publications (1)

Publication Number Publication Date
ES2051905T3 true ES2051905T3 (es) 1994-07-01

Family

ID=20371523

Family Applications (1)

Application Number Title Priority Date Filing Date
ES89103368T Expired - Lifetime ES2051905T3 (es) 1988-02-29 1989-02-25 Conmutador mos bidireccional.

Country Status (7)

Country Link
US (1) US4937642A (es)
EP (1) EP0331063B1 (es)
JP (1) JPH027568A (es)
AT (1) ATE96587T1 (es)
DE (1) DE68910150T2 (es)
ES (1) ES2051905T3 (es)
SE (1) SE460448B (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE464950B (sv) * 1989-11-09 1991-07-01 Asea Brown Boveri Bistabil integrerad halvledarkrets
SE464949B (sv) * 1989-11-09 1991-07-01 Asea Brown Boveri Halvledarswitch
SE513284C2 (sv) * 1996-07-26 2000-08-14 Ericsson Telefon Ab L M Halvledarkomponent med linjär ström-till-spänningskarasterik
JP3013894B2 (ja) * 1997-10-17 2000-02-28 日本電気株式会社 Ｆｅｔ装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714523A (en) * 1971-03-30 1973-01-30 Texas Instruments Inc Magnetic field sensor
US4393578A (en) * 1980-01-02 1983-07-19 General Electric Company Method of making silicon-on-sapphire FET
US4656493A (en) * 1982-05-10 1987-04-07 General Electric Company Bidirectional, high-speed power MOSFET devices with deep level recombination centers in base region
US4571513A (en) * 1982-06-21 1986-02-18 Eaton Corporation Lateral bidirectional dual notch shielded FET
US4571606A (en) * 1982-06-21 1986-02-18 Eaton Corporation High density, high voltage power FET
US4553151A (en) * 1982-09-23 1985-11-12 Eaton Corporation Bidirectional power FET with field shaping
US4721986A (en) * 1984-02-21 1988-01-26 International Rectifier Corporation Bidirectional output semiconductor field effect transistor and method for its maufacture
US4598305A (en) * 1984-06-18 1986-07-01 Xerox Corporation Depletion mode thin film semiconductor photodetectors
US4641164A (en) * 1986-05-30 1987-02-03 Rca Corporation Bidirectional vertical power MOS device and fabrication method

Also Published As

Publication number Publication date
SE460448B (sv) 1989-10-09
JPH027568A (ja) 1990-01-11
US4937642A (en) 1990-06-26
ATE96587T1 (de) 1993-11-15
DE68910150D1 (de) 1993-12-02
EP0331063A1 (en) 1989-09-06
DE68910150T2 (de) 1994-05-19
SE8800696L (sv) 1989-08-30
SE8800696D0 (sv) 1988-02-29
EP0331063B1 (en) 1993-10-27

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