ES2040747T3 - Procedimiento para formar peliculas de deposito. - Google Patents

Procedimiento para formar peliculas de deposito.

Info

Publication number
ES2040747T3
ES2040747T3 ES198787303171T ES87303171T ES2040747T3 ES 2040747 T3 ES2040747 T3 ES 2040747T3 ES 198787303171 T ES198787303171 T ES 198787303171T ES 87303171 T ES87303171 T ES 87303171T ES 2040747 T3 ES2040747 T3 ES 2040747T3
Authority
ES
Spain
Prior art keywords
film
formation
deposited
stage
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198787303171T
Other languages
English (en)
Inventor
Yutaka Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8551587A external-priority patent/JP2692803B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2040747T3 publication Critical patent/ES2040747T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

UN PROCESO PARA FORMAR UNA PELICULA DEPOSITADA QUE COMPRENDE (A) LA ETAPA DE COMPOSICION DE UN SUSTRATO, TENIENDO UNA PARTE QUE COMPRENDE UN MATERIAL QUE FORMARA EL NUCLEO DE CRISTAL PARA LA FORMACION DE LA PELICULA DEPOSITADA O UN MATERIAL CAPAZ DE LA FORMACION SELECTIVA DE DICHO NUCLEO DE CRISTAL SOBRE EL ESPACIO FORMADO DE LA PELICULA PARA LA FORMACION DE LA PELICULA DEPOSITADA EN (B), LA ETAPA DE FORMACION DE LA PELICULA INTRODUCIENDO UNA ESPECIE ACTIVA (A) FORMADA MEDIANTE DESCOMPOSICION DE UN COMPUESTO, CONTENIENDO SILICIO Y UN HALOGENO Y UNA ESPECIE ACTIVADA (B), FORMADA DE UNA SUSTANCIA QUIMICA PARA LA FORMACION DE LA PELICULA, LA CUAL ES REACTIVA MUTUA Y QUIMICAMENTE CON DICHA ESPECIE ACTIVA (A) SEPARADAMENTE DE UNA Y OTRA, SOBRE DICHO ESPACIO DE FORMACION DE LA PELICULA PARA EFECTUAR LA REACCION QUIMICA ENTRE ELLOS Y PARA FORMAR UNA PELICULA DEPOSITADA SOBRE DICHO SUSTRATO; (C) LA ETAPA DE EXPOSICION DE LA PELICULA DEPOSITADA A UNA SUSTANCIA GASEOSA, CONTENIENDO AGUA FUERTE SOBRE LA PELICULA DEPOSITADA A SER FORMADA DURANTE LA ETAPA DE FORMACION DE LA PELICULA, PARA APLICAR LA ACCION DEL AGUA FUERTE SOBRE LA SUPERFICIE DE LA PELICULA DEPOSITADA, ASI PUES EFECTUANDO PREFERENTEMENTE EL CRECIMIENTO DEL CRISTAL EN UNA DIRECCION DE CARA ESPECIFICADA.
ES198787303171T 1986-04-11 1987-04-10 Procedimiento para formar peliculas de deposito. Expired - Lifetime ES2040747T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8393086 1986-04-11
JP8551587A JP2692803B2 (ja) 1986-04-11 1987-04-06 堆積膜形成法

Publications (1)

Publication Number Publication Date
ES2040747T3 true ES2040747T3 (es) 1993-11-01

Family

ID=26424965

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198787303171T Expired - Lifetime ES2040747T3 (es) 1986-04-11 1987-04-10 Procedimiento para formar peliculas de deposito.

Country Status (5)

Country Link
EP (1) EP0241311B1 (es)
AU (1) AU606053B2 (es)
CA (1) CA1333040C (es)
DE (1) DE3784756T2 (es)
ES (1) ES2040747T3 (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3784537T2 (de) * 1986-04-11 1993-09-30 Canon Kk Herstellungsverfahren einer niedergeschlagenen Schicht.
JPH0639702B2 (ja) * 1986-04-14 1994-05-25 キヤノン株式会社 堆積膜形成法
DE3786364T2 (de) * 1986-04-14 1993-11-18 Canon Kk Verfahren zur Herstellung einer niedergeschlagenen Schicht.
JPH0639703B2 (ja) * 1986-04-15 1994-05-25 キヤノン株式会社 堆積膜形成法
JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
WO1991003834A1 (en) * 1989-09-05 1991-03-21 Mcnc Method for selectively depositing material on substrates

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461003A (en) * 1964-12-14 1969-08-12 Motorola Inc Method of fabricating a semiconductor structure with an electrically isolated region of semiconductor material
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
US4443488A (en) * 1981-10-19 1984-04-17 Spire Corporation Plasma ion deposition process
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
US4546008A (en) * 1983-11-07 1985-10-08 Canon Kabushiki Kaisha Method for forming a deposition film
DE3784537T2 (de) * 1986-04-11 1993-09-30 Canon Kk Herstellungsverfahren einer niedergeschlagenen Schicht.
JPH0639702B2 (ja) * 1986-04-14 1994-05-25 キヤノン株式会社 堆積膜形成法
DE3786364T2 (de) * 1986-04-14 1993-11-18 Canon Kk Verfahren zur Herstellung einer niedergeschlagenen Schicht.
JPH0639703B2 (ja) * 1986-04-15 1994-05-25 キヤノン株式会社 堆積膜形成法
US4744763A (en) * 1986-04-15 1988-05-17 Furukawa Electric Co., Ltd. Connector device for a transmission line connecting two relatively rotating members

Also Published As

Publication number Publication date
EP0241311A3 (en) 1988-09-07
DE3784756T2 (de) 1993-10-07
CA1333040C (en) 1994-11-15
EP0241311B1 (en) 1993-03-17
AU606053B2 (en) 1991-01-31
AU7137087A (en) 1987-10-15
DE3784756D1 (de) 1993-04-22
EP0241311A2 (en) 1987-10-14

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