ES2023662B3 - Procedimiento de preparacion de semi-aislantes 3-5-mono-cristalinos por dopado y aplicacion de semiaislantes asi obtenidos. - Google Patents

Procedimiento de preparacion de semi-aislantes 3-5-mono-cristalinos por dopado y aplicacion de semiaislantes asi obtenidos.

Info

Publication number
ES2023662B3
ES2023662B3 ES87400757T ES87400757T ES2023662B3 ES 2023662 B3 ES2023662 B3 ES 2023662B3 ES 87400757 T ES87400757 T ES 87400757T ES 87400757 T ES87400757 T ES 87400757T ES 2023662 B3 ES2023662 B3 ES 2023662B3
Authority
ES
Spain
Prior art keywords
insulators
semi
doped
mono
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES87400757T
Other languages
English (en)
Inventor
Bertrand Lambert
Yves Toudic
Rene Coquille
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ministere des PTT
France Telecom R&D SA
Original Assignee
Ministere des PTT
Centre National dEtudes des Telecommunications CNET
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ministere des PTT, Centre National dEtudes des Telecommunications CNET filed Critical Ministere des PTT
Application granted granted Critical
Publication of ES2023662B3 publication Critical patent/ES2023662B3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
ES87400757T 1986-04-08 1987-04-06 Procedimiento de preparacion de semi-aislantes 3-5-mono-cristalinos por dopado y aplicacion de semiaislantes asi obtenidos. Expired - Lifetime ES2023662B3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8605000A FR2596777B1 (fr) 1986-04-08 1986-04-08 Procede de preparation de semi-isolants 3-5 mono-cristallins par dopage et application des semi-isolants ainsi obtenus

Publications (1)

Publication Number Publication Date
ES2023662B3 true ES2023662B3 (es) 1992-02-01

Family

ID=9334012

Family Applications (1)

Application Number Title Priority Date Filing Date
ES87400757T Expired - Lifetime ES2023662B3 (es) 1986-04-08 1987-04-06 Procedimiento de preparacion de semi-aislantes 3-5-mono-cristalinos por dopado y aplicacion de semiaislantes asi obtenidos.

Country Status (7)

Country Link
US (1) US4853077A (es)
EP (1) EP0243231B1 (es)
JP (1) JPS6325297A (es)
CA (1) CA1311402C (es)
DE (1) DE3771378D1 (es)
ES (1) ES2023662B3 (es)
FR (1) FR2596777B1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1313107C (en) * 1988-06-01 1993-01-26 D. Gordon Knight Growth of semi-insulating indium phosphide by liquid phase epitaxy
EP0906971A3 (en) * 1991-08-22 2002-01-30 Raytheon Company Method of forming a compound semiconductor material
DE4325804C3 (de) * 1993-07-31 2001-08-09 Daimler Chrysler Ag Verfahren zum Herstellen von hochohmigem Siliziumkarbid
FR2845523B1 (fr) * 2002-10-07 2005-10-28 Procede pour realiser un substrat par transfert d'une plaquette donneuse comportant des especes etrangeres, et plaquette donneuse associee

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same
FR1409116A (fr) * 1963-09-25 1965-08-20 Texas Instruments Inc Arséniure de gallium à forte résistivité et procédé de fabrication de ce corps
US3585087A (en) * 1967-11-22 1971-06-15 Ibm Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth
GB1339564A (en) * 1970-09-10 1973-12-05 Secr Defence Semiconductor iii-v material
JPS562407B2 (es) * 1973-01-31 1981-01-20
US4158851A (en) * 1976-03-29 1979-06-19 Sumitomo Electric Industries, Ltd. Semi-insulating gallium arsenide single crystal
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
JPS60137891A (ja) * 1983-12-24 1985-07-22 Sumitomo Electric Ind Ltd 化合物半導体単結晶引き上げ方法と装置
JPS61155296A (ja) * 1984-12-26 1986-07-14 Mitsubishi Monsanto Chem Co 低転位密度ひ化ガリウム単結晶及びその成長方法

Also Published As

Publication number Publication date
FR2596777B1 (fr) 1994-01-21
JPH0556320B2 (es) 1993-08-19
DE3771378D1 (de) 1991-08-22
EP0243231A1 (fr) 1987-10-28
EP0243231B1 (fr) 1991-07-17
CA1311402C (fr) 1992-12-15
US4853077A (en) 1989-08-01
FR2596777A1 (fr) 1987-10-09
JPS6325297A (ja) 1988-02-02

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