ES2006502A6 - Method for fabricating devices using chemical vapour deposition, and devices formed thereby. - Google Patents

Method for fabricating devices using chemical vapour deposition, and devices formed thereby.

Info

Publication number
ES2006502A6
ES2006502A6 ES8701744A ES8701744A ES2006502A6 ES 2006502 A6 ES2006502 A6 ES 2006502A6 ES 8701744 A ES8701744 A ES 8701744A ES 8701744 A ES8701744 A ES 8701744A ES 2006502 A6 ES2006502 A6 ES 2006502A6
Authority
ES
Spain
Prior art keywords
devices
fabricating
vapour deposition
chemical vapour
entities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES8701744A
Other languages
Spanish (es)
Inventor
Patrick Kent Gallagher
Martin Laurence Green
Roland Albert Levy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES2006502A6 publication Critical patent/ES2006502A6/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for fabricating a device, e.g., a semiconductor device, which includes the step of reacting at least two reactive entities to form a metal-containing material (e.g. 130 and 140 150) on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.
ES8701744A 1986-06-16 1987-06-12 Method for fabricating devices using chemical vapour deposition, and devices formed thereby. Expired ES2006502A6 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87447586A 1986-06-16 1986-06-16

Publications (1)

Publication Number Publication Date
ES2006502A6 true ES2006502A6 (en) 1989-05-01

Family

ID=25363874

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8701744A Expired ES2006502A6 (en) 1986-06-16 1987-06-12 Method for fabricating devices using chemical vapour deposition, and devices formed thereby.

Country Status (6)

Country Link
EP (1) EP0268654A1 (en)
JP (1) JPH0680682B2 (en)
KR (1) KR920010125B1 (en)
CA (1) CA1286798C (en)
ES (1) ES2006502A6 (en)
WO (1) WO1987007763A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814545A (en) * 1995-10-02 1998-09-29 Motorola, Inc. Semiconductor device having a phosphorus doped PECVD film and a method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050920A (en) * 1983-08-30 1985-03-22 Toshiba Corp Manufacture of semiconductor device
EP0178200A1 (en) * 1984-09-10 1986-04-16 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Method of control for chemical vapor deposition
DE3685449D1 (en) * 1985-03-15 1992-07-02 Fairchild Semiconductor Corp., Cupertino, Calif., Us

Also Published As

Publication number Publication date
KR880701458A (en) 1988-07-27
WO1987007763A1 (en) 1987-12-17
JPS63503581A (en) 1988-12-22
EP0268654A1 (en) 1988-06-01
KR920010125B1 (en) 1992-11-16
JPH0680682B2 (en) 1994-10-12
CA1286798C (en) 1991-07-23

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