KR880701458A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method

Info

Publication number
KR880701458A
KR880701458A KR1019880700174A KR880700174A KR880701458A KR 880701458 A KR880701458 A KR 880701458A KR 1019880700174 A KR1019880700174 A KR 1019880700174A KR 880700174 A KR880700174 A KR 880700174A KR 880701458 A KR880701458 A KR 880701458A
Authority
KR
South Korea
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Application number
KR1019880700174A
Other languages
Korean (ko)
Other versions
KR920010125B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR880701458A publication Critical patent/KR880701458A/en
Application granted granted Critical
Publication of KR920010125B1 publication Critical patent/KR920010125B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
KR1019880700174A 1986-06-16 1987-05-27 Method for fabricating devices and devices formed thereby KR920010125B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US87447586A 1986-06-16 1986-06-16
US874.475 1986-06-16
PCT/US1987/001230 WO1987007763A1 (en) 1986-06-16 1987-05-27 Method for fabricating devices using chemical vapour deposition, and devices formed thereby

Publications (2)

Publication Number Publication Date
KR880701458A true KR880701458A (en) 1988-07-27
KR920010125B1 KR920010125B1 (en) 1992-11-16

Family

ID=25363874

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880700174A KR920010125B1 (en) 1986-06-16 1987-05-27 Method for fabricating devices and devices formed thereby

Country Status (6)

Country Link
EP (1) EP0268654A1 (en)
JP (1) JPH0680682B2 (en)
KR (1) KR920010125B1 (en)
CA (1) CA1286798C (en)
ES (1) ES2006502A6 (en)
WO (1) WO1987007763A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814545A (en) * 1995-10-02 1998-09-29 Motorola, Inc. Semiconductor device having a phosphorus doped PECVD film and a method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050920A (en) * 1983-08-30 1985-03-22 Toshiba Corp Manufacture of semiconductor device
EP0178200A1 (en) * 1984-09-10 1986-04-16 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Method of control for chemical vapor deposition
DE3685449D1 (en) * 1985-03-15 1992-07-02 Fairchild Semiconductor Corp., Cupertino, Calif., Us

Also Published As

Publication number Publication date
WO1987007763A1 (en) 1987-12-17
JPS63503581A (en) 1988-12-22
EP0268654A1 (en) 1988-06-01
KR920010125B1 (en) 1992-11-16
JPH0680682B2 (en) 1994-10-12
ES2006502A6 (en) 1989-05-01
CA1286798C (en) 1991-07-23

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Legal Events

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A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20061031

Year of fee payment: 15

EXPY Expiration of term