EP4591121A1 - Utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloïde et/ou d'un cétoacidoximate comprenant un composé métallique en tant qu'agent de formation de motifs - Google Patents

Utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloïde et/ou d'un cétoacidoximate comprenant un composé métallique en tant qu'agent de formation de motifs

Info

Publication number
EP4591121A1
EP4591121A1 EP23761778.2A EP23761778A EP4591121A1 EP 4591121 A1 EP4591121 A1 EP 4591121A1 EP 23761778 A EP23761778 A EP 23761778A EP 4591121 A1 EP4591121 A1 EP 4591121A1
Authority
EP
European Patent Office
Prior art keywords
metal
ketoacidoximate
metalloid
compound
use according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP23761778.2A
Other languages
German (de)
English (en)
Inventor
Mohammad SAIFULLAH
Yasin EKINCI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Scherrer Paul Institut
Original Assignee
Scherrer Paul Institut
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Scherrer Paul Institut filed Critical Scherrer Paul Institut
Publication of EP4591121A1 publication Critical patent/EP4591121A1/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Definitions

  • the present invention relates to the use of specific chemical compounds as patterning agents in the photolithography and/or electron beam patterning . It can be used in the field of semiconductor chip production, particularly but not limited to EUV wavelengths , and direct patterning of functional materials for applications such as masks in semiconductor industry, sensors , photonics or catalysis .
  • Photolithography has been the bedrock of fabricating devices in micro- and nanometer regime in the semiconductor industry . It uses a resist, usually a photosensitive polymeric material , for imaging and pattern transfer to a substrate either via the process of plasma etching or by lift-off after metal (oxide) deposition .
  • a resist usually a photosensitive polymeric material
  • EUV technology 13 . 5 nm wavelength
  • ArF immersion lithography has emerged as the strong alternative to ArF immersion lithography for high volume manufacturing .
  • novel resist materials that possess high sensitivity at this wavelength, capable of high resolution, exhibit low line edge roughness (LER) , and at the same time preserving the pattern fidelity and uniformity .
  • Chemically amplified resists (CAR) which are primarily organic, have served very well in 248 nm and 193 nm lithography but are very transparent in EUV wavelength .
  • the graph in Figure 13 provides theoretically calculated EUV absorption cross-section of various elements .
  • the data here provide guidelines for the choice of elements in EUV resists that would increase the absorption of radiation .
  • elements with higher EUV absorption cross-section are preferred .
  • a patterning agent such as a photo-resist
  • a patterning agent such as a photo-resist
  • This obj ective is achieved according to the present invention by the use of a metal and/or metalloid-comprising ketoacidoximate and/or a metal-compound-comprising ketoacidoximate as a patterning agent in photolithography and electron beam lithography with applications in the field of semiconductor chip production, and direct patterning of functional materials for mask production, sensors , photonics or catalysis .
  • metal and/or metalloid-comprising ketoacidoximate and/or a metal-compound-comprising ketoacidoximate show exactly the desired properties in terms of high EUV absorbance or electron beam sensitivity that results in the desired sensitivity .
  • EUV lithography uses a shorter wavelength ( 13 . 5 nm) radiation that necessitates development of novel photoresists sensitive to this wavelength . Since at this wavelength, conventional carbon-based resists are fairly transparent, novel resists that contain heavier elements that highly absorb EUV radiation are needed . It is logical to incorporate in resists metals such as tin with high absorption cross-section at EUV wavelength ( Figure 1 ) to improve their sensitivity . However, the exposure of the resist happens via the secondary electrons generated in the resist volume during the EUV exposure . How effective these electrons are in breaking bonds in the resist also matters .
  • the efficacy of secondary electrons has been considered in exposure of resist using empirical means .
  • nickel and zinc have similar EUV absorption cross-sections .
  • one presently preferred resist containing zinc needs a much lower dose for exposure than the nickel resist with the same ligand environment, suggesting that the interaction between secondary electrons play a maj or role in the irradiation process .
  • a divalent metal or metalloid or metal-compound comprising ketoacidoximate can have one of the following structural forms :
  • Ri and R 2 stand for hydrogen (H) , organic groups , such as aliphatic C 3 to Ci 0 , aromatic, cyclic, polymerizable, such as acrylate, methacrylate , vinyl , etc . , or a combination of these; and
  • M stands for a central metal or metalloid atom, which can be monovalent, divalent, trivalent, tetravalent, pentavalent or higher, that is attached to the ketoacidoximate group in monodentate, bidentate, or tridentate fashion, and/or for a central metal atom being attached to other groups such as oxide, hydroxide , etc .
  • M stands for a central metal atom being attached to a further group R 3 which is a carboxylate such as acetate, etc . , a glycinate, a xanthate, an alkyl , an aryl , or the like .
  • the metal atom selected from a group comprising zinc, indium, aluminium, nickel , magnesium, and tin .
  • Figure 1 Dose-to-gel curves of zinc ( I I ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam; ( c) Sensitivity values of the resist obtained with various developers ; Figure 2 EUV lithography of (a) half pitch 22 nm (325 mJ/cm 2 ), (b) half-pitch 18 nm (297 mJ/cm 2 ), and (c) half pitch 16 nm (290 mJ/cm 2 ) lines using zinc (II) methoxyimino propionate resist;
  • Figure 5 EUV lithography of (a) half pitch 22 nm (222 mJ/cm 2 ), (b) half-pitch 18 nm (223 mJ/cm 2 ), and (c) half pitch 16 nm (199 mJ/cm 2 ) lines using indium(III) hydroxyimino propionate resist;
  • Figure 7 EUV lithography of (a) half pitch 22 nm (193 mJ/cm 2 ), (b) half-pitch 18 nm (194 mJ/cm 2 ) , and (c) half pitch 16 nm (173 mJ/cm 2 ) lines using indium(III) methoxyimino propionate resist;
  • Figure 9 EUV lithography of (a) half pitch 50 nm (64 mJ/cm 2 ), and (b) half-pitch 35 nm (51 mJ/cm 2 ) using aluminium ( III ) methoxyimino propionate resist;
  • Figure 10 Dose-to-gel curves of nickel (II) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam; (c) Sensitivity values of the resist obtained with various developers;
  • the first step involves condensation of an a-keto acid with an amine to give a-oximino acid .
  • a-oximino acid is then reacted with a metal/metalloid salt (e . g . , nitrate or chloride) in the presence of a suitable base to given metal/metalloid ketoacidoximate as shown below .
  • a metal/metalloid salt e . g . , nitrate or chloride
  • the reaction can be carried out in either organic or an aqueous medium .
  • Synthesized metal/metalloid ketoacidoximates are found to be sensitive to energetic electrons ( 0 . 5 to 300 kV) , extreme ultraviolet (EUV) radiation ( 92 eV, 13 . 5 nm) and other types of energetic radiation below 250 nm wavelength .
  • energetic electrons 0 . 5 to 300 kV
  • EUV extreme ultraviolet
  • Such sensitivity to electrons and EUV radiation have made them patternable and henceforth they will be called “metal ( loid) -containing patterning agents” or simply “patterning agents” .
  • the organic groups attached to amine (Ri) and a-keto acid (R 2 ) can be individually and independently modified .
  • These groups can be hydrogen (H) , aliphatic (Ci-Cio) , aromatic, cyclic, polymerizable (acrylate, methacrylate, vinyl , etc . ) , or a combination of these .
  • central metal atom that is attached to the ketoacidoximate group
  • the central atom attached to other groups as well such as oxide, hydroxide, or any group R 3 such as carboxylate (acetate , etc . ) , glycinate, xanthate, alkyl , aryl , etc .
  • the central metal atom could be monovalent, divalent and above .
  • Adducts with Lewis bases bonded to central metal atoms are also possible.
  • the present invention also provides for a process for patterning a semiconductor surface by coating the surface with the patterning agent and the irradiating of the coated surface with a predefined photon irradiation pattern or electron beam pattern.
  • appropriate amounts of patterning agents here photoresists, were dissolved in a solvent, for example 2 -methoxyethanol, to give concentrations between 0.0125 gm/ml to 0.1 gm/ml.
  • concentrations in the range of 0.0125 gm/ml to 0.025 gm/ml are found to be suitable.
  • These solved resists were spin-coated on pre-cleaned semiconductor substrates, for example silicon substrates, at an appropriate spin-speed, for example a spinspeed of 1800 rpm. They were then exposed to photon radiation, for example EUV radiation, through a mask at a photon source or to electrons, for example 100 kV electrons, inside an electron beam writer.
  • the photon radiation can be generated for example in a synchrotron, for example at the Swiss Light Source (SLS) in Villigen PSI, Switzerland (visit for more details on the SLS at www.psi.ch) .
  • resists For studying the sensitivity of resists to plot dose-to-gel curves, they were exposed at various doses using EUV or electrons. These resists were developed with various organic solvents such as methanol, ethanol, iso-propanol, 2- methoxyethanol, l-methoxy-2-propanol, 1-butoxyethanol, 3- methoxy-l-butanol, 2-methoxyethyl acetate, and l-methoxy-2- propyl acetate. They were rinsed using the same solvent in which they were developed. For dose-to-gel curves, 10 seconds of development, immediately followed by 5 second rinse, and then blow-drying using nitrogen. The resists showed a negative tone behavior after exposure.
  • organic solvents such as methanol, ethanol, iso-propanol, 2- methoxyethanol, l-methoxy-2-propanol, 1-butoxyethanol, 3- methoxy-l-butanol, 2-methoxyethyl acetate, and l
  • Figure 1 shows dose-to-gel curves of zinc (II) methoxyimino propionate resists exposed to (a) EUV and (b) electron beam.
  • Figure 1 (c) shows the sensitivity values of the resist obtained with various developers .
  • Figure 2 shows EUV lithography of (a) half pitch 22 nm (325 mJ/cm 2 ) , (b) half-pitch 18 nm (297 mJ/cm 2 ) , and (c) half pitch 16 nm (290 mJ/cm 2 ) lines using zinc (II) methoxyimino propionate resist .
  • Figure 3 shows an electron beam lithography of 5 nm wide lines patterned using zinc (II) methoxyimino propionate resist.
  • Figure 4 now shows the dose-to-gel curves of indium (III) hydroxyimino propionate resist exposed to (a) EUV and (b) electron beam.
  • Figure 4 (c) shows the sensitivity values of the resist obtained with various developers.
  • Figure 5 shows the EUV lithography of (a) half pitch 22 nm (222 mJ/cm 2 ) , (b) halfpitch 18 nm (223 mJ/cm 2 ) , and (c) half pitch 16 nm (199 mJ/cm 2 ) lines using indium (III) hydroxyimino propionate resist.
  • Features here are slightly smaller than the designed half pitch due to underdosing.
  • Figure 6 shows the dose-to-gel curves of indium (III) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam.
  • Figure 6(c) shows the sensitivity values of the resist obtained with various developers. indicates data from poor development characteristics. 'N/A' indicates that data could not be acquired due to excessive scum on the surface .
  • Figure 7 shows the EUV lithography of (a) half pitch 22 nm ( 193 mJ/cm 2 ) , (b) half-pitch 18 nm ( 194 mJ/cm 2 ) , and ( c) half pitch 16 nm ( 173 mJ/cm 2 ) lines using indium ( III ) methoxyimino propionate resist .
  • Features here are slightly smaller than the designed half pitch due to underdosing .
  • Figure 8 shows the dose-to-gel curves of aluminium ( III ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam .
  • Figure 8 ( c) shows the sensitivity values of the resist obtained with various developers .
  • MeOH methanol
  • 1M2P l-methoxy-2-propanol
  • 3M1B 3-methoxy-l-butanol
  • 2-MEA 2- methoxyethyl acetate .
  • Figure 10 shows the dose-to-gel curves of nickel ( II ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam .
  • Figure 10 ( c) shows the sensitivity values of the resist obtained with various developers . 'N/A' indicates that data could not be acquired due to no feature seen on the surface .
  • Figure 11 shows the dose-to-gel curves of magnesium ( II ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam .
  • Figure 11 ( c) shows the sensitivity values of the resist obtained with various developers . 'N/A' indicates that data could not be acquired due to no development at all .
  • Figure 12 shows the dose-to-gel curves of tin ( II ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam .
  • Figure 12 ( c) shows the sensitivity values of the resist obtained with various developers . indicates data from poor development characteristics . 'N/A' indicates that data could not be acquired due to excessive scum on the surface . Maj or advantages of the metal/metal compound Ketoacidoximate resist system include
  • Resists are sub-5 nm lithography capable and possibly angstrom-scale lithography as well using an electron beam
  • Figure 13 provides theoretically calculated EUV absorption cross-section of various elements .
  • the data here provide guidelines for the choice of elements in EUV resists .
  • Figure 14 shows EUVL Dose-to-Gel curves for a Zn (MIP) 2 . 2H2O Resist .
  • EUV patterning results are presented with the Zn (MIP) 2 . 2H2O resist or the Zn (MIP) 2 (Anhydrous ) resist .
  • Figure 15 illustrates the EUV patterning results for Zn (MIP) 2 . 2 H2O Resist without underlayer .
  • Figure 16 depicts the EUV patterning results for Zn(MIP)2 (Anhydrous) also without an underlayer.
  • Figure 17 illustrates the EUV patterning results for Zn(MIP)2 (Anhydrous) with an underlayer SHT101 while Figure 18 represents the EUV patterning results for Zn (MIP) 2 (Anhydrous) with underlayer SHT101 and and post-exposure bake at 80 °C and 60 sec.
  • Figure 19 shows the EUV patterning results for Zn(MIP)2 (Anhydrous) with a different underlayer PRE102 and and a postexposure bake at 90 °C and 60 sec.
  • Figure 20 depicts the EUV patterning results for Zn (MIP) 2.2 H2O Resist without underlayer and now with a different developer Anisole and Figure 21 shows the EUV patterning results for Zn(MIP)2 (Anhydrous) without underlayer and with the developer Anisole.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

La présente invention concerne l'utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloïde et/ou d'un cétoacidoximate comprenant un composé métallique en tant que métal fonctionnel et/ou d'un cétoacidoximate comprenant un métalloïde en tant qu'agent de formation de motifs dans la lithographie EUV et la lithographie par faisceau d'électrons avec des applications dans le domaine de la production de puces semi-conductrices, et dans la formation directe de motifs sur matériaux fonctionnels pour la production de masques, pour des capteurs et en photonique ou en catalyse. De préférence, le cétoacidoximate comprenant un métal ou un composé métallique présente l'une des formes structurales suivantes : la formule (I) ou la formule (II), dans lesquelles : R1 et R2 représentent de l'hydrogène (H), des composés organiques, tels que des composés aliphatiques en C1 à C10, des composés aromatiques, cycliques, polymérisables, tel que l'acrylate, le méthacrylate, le vinyle, etc., ou une combinaison de ceux-ci ; et M représente un atome central métallique ou métalloïde qui est fixé au groupe cétoacidoximate, et/ou un atome métallique central fixé à d'autres groupes tels qu'un groupe oxyde, un groupe hydroxyde, etc., ou un atome métallique central fixé à un autre groupe R3 qui est un carboxylate tel que l'acétate, etc., un glycinate, un xanthate, un alkyle, un aryle, ou analogue.
EP23761778.2A 2022-09-22 2023-08-18 Utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloïde et/ou d'un cétoacidoximate comprenant un composé métallique en tant qu'agent de formation de motifs Pending EP4591121A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP22197213.6A EP4343432A1 (fr) 2022-09-22 2022-09-22 Utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloide et/ou d'un composé métallique comprenant du cétoacidoximate en tant qu'agent de formation de motifs
PCT/EP2023/072763 WO2024061550A1 (fr) 2022-09-22 2023-08-18 Utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloïde et/ou d'un cétoacidoximate comprenant un composé métallique en tant qu'agent de formation de motifs

Publications (1)

Publication Number Publication Date
EP4591121A1 true EP4591121A1 (fr) 2025-07-30

Family

ID=83438577

Family Applications (2)

Application Number Title Priority Date Filing Date
EP22197213.6A Withdrawn EP4343432A1 (fr) 2022-09-22 2022-09-22 Utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloide et/ou d'un composé métallique comprenant du cétoacidoximate en tant qu'agent de formation de motifs
EP23761778.2A Pending EP4591121A1 (fr) 2022-09-22 2023-08-18 Utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloïde et/ou d'un cétoacidoximate comprenant un composé métallique en tant qu'agent de formation de motifs

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP22197213.6A Withdrawn EP4343432A1 (fr) 2022-09-22 2022-09-22 Utilisation d'un cétoacidoximate comprenant un métal et/ou un métalloide et/ou d'un composé métallique comprenant du cétoacidoximate en tant qu'agent de formation de motifs

Country Status (6)

Country Link
EP (2) EP4343432A1 (fr)
JP (1) JP2025531404A (fr)
KR (1) KR20250051090A (fr)
CN (1) CN119856118A (fr)
TW (1) TW202419454A (fr)
WO (1) WO2024061550A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009004491A1 (de) * 2009-01-09 2010-07-15 Merck Patent Gmbh Funktionelles Material für gedruckte elektronische Bauteile
WO2012163464A1 (fr) * 2011-06-01 2012-12-06 Merck Patent Gmbh Tft ambipolaires hybrides
CN105934535A (zh) * 2014-01-31 2016-09-07 默克专利股份有限公司 制备uv光检测器的方法
US9899325B2 (en) * 2014-08-07 2018-02-20 Infineon Technologies Ag Device and method for manufacturing a device with a barrier layer

Also Published As

Publication number Publication date
JP2025531404A (ja) 2025-09-19
CN119856118A (zh) 2025-04-18
WO2024061550A1 (fr) 2024-03-28
KR20250051090A (ko) 2025-04-16
EP4343432A1 (fr) 2024-03-27
TW202419454A (zh) 2024-05-16

Similar Documents

Publication Publication Date Title
JP6119544B2 (ja) レジスト材料及びこれを用いたパターン形成方法
TWI416255B (zh) 光阻組成物及多層阻劑系統之多次曝光方法
KR100922923B1 (ko) 레지스트 패턴의 형성 방법 및 디바이스의 제조 방법
Saifullah et al. Approaching angstrom-scale resolution in lithography using low-molecular-mass resists (< 500 Da)
JP2501292B2 (ja) 酸感応ポリマおよびホトレジスト構造の作成方法
KR20120093777A (ko) 레지스트 재료 및 이것을 이용한 패턴 형성 방법
KR20010045418A (ko) 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
KR20120093781A (ko) 레지스트 재료 및 이것을 이용한 패턴 형성 방법
KR20160148625A (ko) 감방사선성 또는 감활성광선성 수지 조성물과 그것을 이용한 레지스트막, 마스크 블랭크, 레지스트 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 전자 디바이스
KR20110066098A (ko) 네가티브형 레지스트 조성물 및 패턴 형성 방법
KR100948213B1 (ko) 감광성 화합물, 감광성 조성물, 레지스트 패턴의 형성방법및 디바이스의 제조방법
EP0226009A2 (fr) Composition photoréserve ayant un taux de dissolution réglable dans un révélateur alcalin
KR100948212B1 (ko) 감광성 화합물, 감광성 조성물, 레지스트 패턴의 형성방법및 디바이스의 제조방법
US20200272050A1 (en) Enhanced EUV Photoresist Materials, Formulations and Processes
Chen et al. Hybrid alkyl-ligand tin-oxo clusters for enhanced lithographic patterning performance via intramolecular interactions
JP2000231191A (ja) フォトレジスト架橋剤用単量体、フォトレジスト架橋剤、フォトレジスト組成物、フォトレジストパターン形成方法、および半導体素子
CN117492324A (zh) 半导体光刻胶组合物及使用所述组合物形成图案的方法
US7989155B2 (en) Lithographic method
EP4343432A1 (fr) Utilisation d&#39;un cétoacidoximate comprenant un métal et/ou un métalloide et/ou d&#39;un composé métallique comprenant du cétoacidoximate en tant qu&#39;agent de formation de motifs
WO2020234615A1 (fr) Procédé de formation d&#39;un motif de résine pour euv
JP2516207B2 (ja) 放射線感応性材料
JP2025518845A (ja) 紫外線レジスト、紫外線レジストのパターニング方法および用途
KR102852077B1 (ko) 안티모니 기반 유기금속 화합물을 포함하는 포토레지스트용 조성물 및 이를 이용한 포토레지스트 패턴 형성방법
JPH0143300B2 (fr)
JP3417070B2 (ja) パターン形成材料

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20250228

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)