Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
  • B29C64/10—Processes of additive manufacturing
  • B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
  • B29C64/124—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified
  • B29C64/129—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask
  • B29C64/135—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask the energy source being concentrated, e.g. scanning lasers or focused light sources
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B33—ADDITIVE MANUFACTURING TECHNOLOGY
  • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
  • B33Y10/00—Processes of additive manufacturing
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B33—ADDITIVE MANUFACTURING TECHNOLOGY
  • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
  • B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0037—Production of three-dimensional images
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
  • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
  • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70416—2.5D lithography
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Definitions

• the invention relates to a method for producing a three-dimensional target structure in a lithography material using a laser lithography device.
• the invention also relates to a laser lithography device adapted and designed for the method.
• a structure is usually written by first providing a substrate with lithography material arranged thereon and then irradiating an exposure dose into the lithographic material in a focus area of a writing laser beam, thereby locally defining a structure area, for example by Lithography material is locally cured or polymerized.
• a three-dimensional overall structure can then be produced by shifting the focus area in the lithographic material.
• the focus area of the writing laser beam can be controlled by means of an optics device within a scanning area with the precision required for structuring.
• Such a laser lithography method is known, for example, from DE 102017 110 241 A1.
• 7,893,410 B2 for example, in which the substrate is moved laterally to the optical axis of a writing laser beam by means of a positioning device and a position of the interface between substrate and lithographic material relative to the focus area of a writing laser beam is determined at a plurality of positions is determined.
• a positioning device for example, a position of the interface between substrate and lithographic material relative to the focus area of a writing laser beam is determined at a plurality of positions is determined.
• the object of the invention is to produce a three-dimensional structure with high precision in a lithographic material.
• This object is achieved by a method according to claim 1.
• This is a laser lithography process, in particular a so-called direct process
• Laser writing using a laser lithography device in a volume of lithographic material or in a volume filled with lithographic material.
• a substrate with lithographic material arranged thereon is first provided.
• the substrate can be displaced in particular by means of a positioning device of the laser lithography device designed for this purpose.
• the substrate can be displaced in all three spatial directions (x, y, z) by means of the positioning device, more particularly additionally by at least one axis of inclination parallel to a substrate surface (xy plane) can be inclined.
• a target structure is written or defined in the lithographic material by sequentially defining a plurality of structure regions (hereinafter also referred to as “voxels”) that complement each other to form the target structure (ie with the laser lithography device in the lithographic material”. is written").
• voxels structure regions
• a focus area of a writing laser beam is shifted in a controlled manner by means of an optics device within a writing area of a scan area defined by the optics device, in particular laterally to the optical axis of the writing laser beam.
• the focal region traverses a scan manifold within the scan area.
• the scan manifold can be a scan curve, but it can also be made more complex.
• the writing laser beam can be controlled by means of the optics device within the writing area with the precision required for the purpose of structuring.
• the optics device can comprise beam shaping, beam guiding and/or beam steering devices for the laser beam that are fundamentally known from the prior art.
• the substrate with the lithographic material is additionally displaced in a controlled manner relative to the writing laser beam by means of the positioning device.
• a write exposure dose is radiated into the lithographic material in the focus area of the write laser beam, with the lithographic material being locally modified, in particular using multi-photon absorption, and thus a structural area being produced or written.
• the lithography material is structured locally.
• the lithographic material is chemically and/or physically changed, for example cured or polymerized, by the irradiation of the writing exposure dose.
• the exposure dose is in particular a volume dose of radiant energy.
• the size of the altered structural area ("voxels") in the lithography material depends on the writing exposure dose.
• the spatial extent of the respective structure region or voxel, in particular a structure height, can thus be changed by varying the writing exposure dose.
• the displacement of the writing laser beam by means of the optics device and the local radiation of the writing exposure dose takes place in accordance with specified or specifiable writing instructions.
• the write instructions can be stored or can be stored in a control device of the laser lithography device.
• the method includes in particular a step in which the writing instructions are specified, in particular before and/or during the actual writing.
• the write instructions preferably include control instructions on the basis of which the optical devices, in particular a scanning device and/or a beam shaping device of the optics device.
• the writing instructions also include, in particular, exposure instructions which specify a writing exposure dose to be irradiated for the scan variety, depending on the location.
• an interface between the lithography material and the substrate is localized, in particular before the structure is actually written.
• a position of the interface relative to the scanning area is determined. It is also conceivable that the interface is localized additionally or exclusively during the writing of the structure, "online" so to speak.
• a focus area of a calibration laser beam in particular the focus area of the writing laser beam, sequentially to a plurality of test positions within the writing area of the scanning surface laterally to the optical axis and to locally inject a test exposure dose into the irradiate lithographic material.
• positional data of the interface are then determined, in particular with the aid of a computer.
• a position of the interface relative to the focus area of the writing laser beam is determined for a plurality of positions within the scanning area. It is also possible that from the position data determined at the individual test positions an overall position of the interface relative to the scanning area is determined.
• the focus area of the calibration laser beam is shifted to the test positions by means of the same optical device by means of which the writing laser beam is also shifted for actually defining the structure.
• the calibration laser beam in particular passes through that beam guiding device and/or scanning device of the optics device, by means of which the write laser beam is deflected to define the structural regions within the scanning area.
• the displacement of the calibration laser beam to the test positions preferably takes place with the substrate stationary laterally to the optical axis, ie in the x-y plane. In other words, the test positions are not approached by moving the substrate laterally to the optical axis. In particular, the test positions are distributed over the writing area of the scanning surface.
• At least one writing instruction or the optics device and at least one writing instruction are changed as a function of the determined position data.
• the writing process is adapted as a function of a determined position of the interface relative to the scanning area.
• this can be the adaptation of hardware (e.g. an adjustment of the optical means of the optical device) and/or software (e.g. an arithmetic adjustment of write data sets, see below) include.
• the laser lithography device is then controlled by means of the appropriately adapted optics device or on the basis of the adapted writing instructions in order to write the target structure.
• Such a method not only makes it possible to detect deviations of the interface or the substrate surface from the ideal shape of a completely flat surface (e.g. a curvature or local unevenness of the substrate or a tilting of the substrate in relation to the scanning surface), but also deviations in the scanning surface from the ideal shape of a plane (e.g. a curvature of the scan surface or a tilting of the scan surface in relation to the substrate). It has been recognized that the scanning surface can also deviate from the ideal shape of a plane that is plane-parallel to the substrate surface, for example due to errors in the optics device, which can lead to structural errors when writing the target structure.
• the present method it is now possible to detect such a location-dependent change in the position of the focus area relative to the substrate within the scanning area caused by the optics device and thus to determine a location-dependent focus with comparatively high accuracy.
• a writing process can then be adjusted accordingly on the basis of the determined position data in order to compensate for deviations from an ideal system and thus to generate structures with particularly high dimensional accuracy.
• the writing area is sequentially displaced and positioned laterally to the optical axis relative to the substrate and the interface between the substrate and the lithographic material is localized in each case in the writing area.
• the interface is localized as explained above (i.e.
• the writing area is then shifted laterally to the optical axis relative to the substrate to a new position and there the interface is localized again (i.e. a plurality of test positions are also approached within the newly positioned writing area).
• a method makes it possible, in particular, to be able to distinguish between a deviation of the substrate from its ideal shape and a deviation of the scan area from its ideal shape, and thus to be able to adapt a writing process particularly precisely.
• a curvature of the substrate can be detected particularly precisely in this way.
• the writing area can be shifted, for example, by shifting the substrate and/or by changing the optics device, in particular shifting a lens module of the optics device.
• An advantageous embodiment of the method is that an optical signal is detected in a spatially resolved manner to determine the position data.
• the detection radiation can in particular be radiation backscattered by the lithography material and/or the substrate or generated by fluorescence. It is conceivable, for example, that radiation reflected at the interface is detected.
• the position data can then be determined, in particular, in that detection data collected by the optical measuring device are further processed computationally, for example by means of a control device of the laser lithography device set up for this purpose.
• the radiation generated by fluorescence can be, for example, fluorescence radiation generated by non-linear excitation (non-linear fluorescence).
• the position data represent a focus position of the substrate along the optical axis of the calibration laser beam, in which the focus area of the calibration laser beam lies in the interface between the lithography material and the substrate.
• the position data represent in particular a relative position of the substrate and focus area, at which the scan area intersects the interface.
• a plurality of laser pulses are radiated into the lithographic material at each test position and, during this, the substrate with the lithographic material is moved along the optical axis of the Calibration laser beam, in particular along a main direction of incidence (z-direction) is moved.
• a response of the lithographic material and/or the substrate to the test exposure dose can be detected at each test position for a plurality of z positions of the substrate and in this way a dependence of the response of the lithographic material and/or the substrate on a position of the substrate be determined (z-sweep).
• the focus area is shifted along the main direction of irradiation.
• the position data can then be determined, in particular by computation.
• the measurement data can be recorded in a measurement curve and a simulated response of an ideal system can be fitted for evaluation.
• the position of the boundary surface can be determined particularly precisely relative to the focus area.
• the laser pulses are, in particular, modulated laser pulses generated by a modulation device, which in turn consist of many intrinsic pulses (e.g. fs laser pulses). For example, a pulse duration can be 1 ps or longer.
• the laser pulses are therefore in particular not pulses intrinsically generated by the laser source.
• the lithographic material is within the limits due to the irradiation of the test exposure dose of the calibration measurements is not changed.
• the total test exposure dose irradiated by the calibration laser beam for each test position is chosen to be so low that no structuring occurs in the lithographic material.
• a laser intensity is selected which is below the threshold value at which appreciable polymerization of the lithographic material takes place (polymerization threshold). This makes it possible to carry out the calibration measurements several times without negatively influencing a later writing result.
• the focus area of the calibration laser beam is wobbled laterally, ie orthogonally to an irradiation direction, when irradiating the test exposure dose.
• wobbling refers to an oscillating movement perpendicular to the optical axis.
• the calibration laser beam can be a laser beam that is separate from the writing laser beam.
• the laser lithography device can then include, in particular, a second laser source for emitting a calibration laser beam.
• a separate calibration laser beam makes it possible to localize the boundary surface “online”, so to speak, even during the actual definition of the structure by the writing laser beam.
• the calibration laser beam is aligned with the writing laser beam is calibrated. For this purpose it is conceivable, for example, that a response from
• Lithography material and / or the substrate is detected on a test exposure dose of the writing laser beam and the calibration laser beam, in particular a backscatter or fluorescence signal.
• a correlation between the writing laser beam and the calibration laser beam can then be determined from a comparison of the detected signals. It is also conceivable that a writing result of the writing laser beam, in particular a structure defined with the writing laser beam, is correlated with a measurement result of the calibration laser beam.
• the write laser beam itself to be used as the calibration laser beam.
• the write laser beam is first shifted to the test positions by means of the optics device and a test exposure dose is radiated in there locally before the actual structuring of the lithographic material takes place using the write laser beam.
• Such a design enables an intrinsic calibration. In particular, an effective surface can thus be measured.
• An advantageous embodiment of the method can provide, for example, that a local exposure dose is adjusted as a function of the determined position data.
• a local exposure dose is adjusted as a function of the determined position data.
• at least for a subset, in particular only for a subset, of the scan points along a local write exposure dose changes in a scan manifold to be traversed by the write laser beam.
• a write exposure dose is adapted as a function of the location as a function of the determined position data.
• a configuration of the scan area can also be changed depending on the determined position data.
• the scanning surface can be aligned relative to the substrate as a function of the determined position data by changing the optical device, for example straightened by beam shaping and/or tilted relative to the substrate.
• the scanning area is preferably changed as a function of the determined position data in such a way that the scanning area is aligned parallel to a substrate surface of the substrate.
• a position and/or position of the substrate can be changed as a function of the determined position data of the interface, in particular by means of a positioning device designed for this purpose.
• a positioning device designed for this purpose.
• the substrate is aligned horizontally, in particular parallel to the scanning area.
• the write instructions can be stored or can be stored in at least one write data record.
• the at least one write data record can preferably be stored in a memory device of the control device Laser lithography device stored or be storable.
• at least one corrected write data set can then be determined, in particular from the at least one write data set, on the basis of which the laser lithography device is controlled in order to produce the target structure.
• Such a method can be automated and thus enables a simple and user-friendly calibration.
• an “ideal write data record” can first be provided, which contains write instructions for an ideal system in which the boundary surface and the scan surface are oriented plane-parallel to one another.
• This "ideal write data set” can then be adjusted by computation depending on the determined position data in order to compensate for deviations of the real system from the ideal system (e.g. a tilting of the substrate relative to the scan surface and/or a curvature of the scan surface, etc.).
• the at least one write data record can in particular include control data for controlling the optics device.
• the at least one write data record preferably includes control data for controlling a scanning device and/or a beam shaping device of the optics device.
• the control data can specify a scan course within the scan area and/or a beam shape (e.g. a suitable pulse shape) for the writing laser beam in particular.
• a beam shape e.g. a suitable pulse shape
• the at least one write data record can in particular also include write exposure data which represent a local exposure dose for each scan point along a scan manifold of the write laser beam through the lithographic material.
• the write exposure data specify the exposure dose with which radiation is to be applied at a specific position of the scan manifold.
• the write exposure data can be provided in particular by providing a structure data record (e.g. CAD data, for example) representing the target structure to be generated or storing it in a control device and then using the computer to determine the write exposure data, for example by means of a device set up for this purpose Control device of the laser lithography device.
• the writing exposure data can be present in the form of gray scale image data representing the target structure, with different gray scales defining different structure heights.
• the writing exposure data can be visualized as greyscale images.
• the at least one write data record can include, in particular, a greyscale image data record.
• the write exposure data are preferably provided by reading a greyscale image file into a control device of the laser lithography device and storing it in a memory.
• the lithographic material is preferably designed in such a way and the writing laser beam is matched to the lithographic material in such a way that a change in the lithographic material (for example local polymerisation) is only possible by means of the absorption of a plurality of photons.
• the wavelength of the writing laser beam can be selected (and thus the associated quantum energy can be dimensioned such) that the energy input required for changing the lithographic material is only achieved by simultaneous absorption of two or more quanta.
• the probability of such a process is not linearly dependent on the intensity and is significantly increased in the focus area compared to the rest of the writing laser beam. From fundamental considerations it follows that the probability of absorption of two or more quanta can depend on the square or a higher power of the radiation intensity. In contrast to this, the probability for linear absorption processes has a different intensity dependence on, in particular with a lower power of the radiation intensity. Since the penetration of the writing laser beam into the lithographic material is attenuated (e.g.
• lithography material is basically referred to as substances whose chemical and/or physical
• Material properties can be changed by irradiation with a writing laser beam, for example so-called lithographic lacquers.
• lithography materials can be divided into so-called negative resists (in which irradiation causes local curing or solubility in a developer medium is reduced) and so-called positive resists (in which the Irradiation increases the solubility locally in a developer medium).
• the object set at the outset is also achieved by a laser lithography device according to claim 13 .
• the laser lithography apparatus is for generating a three-dimensional target structure in one
• the laser lithography device includes a positioning device for displacing and positioning a substrate.
• the positioning device is designed to displace the substrate in all three spatial directions (X, Y, Z), preferably also to tilt it about at least one axis of inclination parallel to the X-Y plane.
• the laser lithography device also includes a laser source for emitting a writing laser beam and an optics device.
• the optics device comprises a beam guiding device, in particular comprising optics means such as lenses, mirrors, etc., for defining a beam path for the writing laser beam from the laser source to the lithographic material.
• the optics device includes focusing optics, which are designed to focus the writing laser beam in a focus area.
• the optics device also includes a scanning device.
• the scanning device can have a deflection device (e.g. comprising deflection mirrors) for changing a position of the focus area of the writing Be laser beam in the lithographic material.
• the optics device can also include a beam shaping device and/or a modulation device for shaping suitable beam pulses.
• the laser lithography device also includes a measuring device for detecting radiation emitted by the lithography material and/or the substrate, in particular reflected radiation or radiation generated by fluorescence.
• the measuring device can in particular comprise measuring optics, which are preferably designed to be confocal to the device (e.g. beam guiding device) that generates the writing laser beam.
• the measuring device comprises a detection device for detecting radiation which is backscattered by the substrate and/or the lithographic material, reflected or generated by fluorescence.
• the laser lithography device also includes a control device which is set up to carry out the methods explained above.
• the control device includes, in particular, a computing unit and a non-volatile memory in which the data sets explained above are or can be stored.
• FIG. 3 outlined illustration to explain the method for localizing an interface between substrate and lithographic material
• Fig. 4-7 Sketched representations to explain different procedures for adapting the writing process depending on a determined position of the interface.
• the laser lithography device 10 includes a laser source 12 for emitting a writing laser beam 14.
• the laser lithography device 10 also includes an optics device denoted overall by the reference numeral 16.
• the optics device 16 includes a beam guiding device 18 for defining a beam path 20 for the writing laser beam 14 from the laser source 12 to a lithographic material 22 to be structured.
• the beam guiding device 18 has a plurality of modules which fulfill optical and/or mechanical functions.
• the beam path 20 can first run through a beam shaping device 24 for shaping suitable beam pulses.
• the optics device 16 also includes focusing optics 26 for focusing the writing laser beam 14 in a focus area 28 (cf. also FIG. 2).
• the focusing optics 26 include, for example, a lens module 30 through which the writing laser beam 14 is radiated into the lithography material 22 .
• the optics device 16 also includes a scanning device 32, by means of which the focus area 28 of the
• Writing laser beam 14 can be displaced within a writing region 34 of a scanning area 36 (cf. FIG. 2) relative to the lithography material 22 with a precision required for structuring.
• the scanning device 32 includes a beam steering module 36 which can include, for example, a galvanometer scanner unit for the controlled deflection of the laser beam 14 .
• the lithographic material 22 is provided on a substrate surface 38 of a substrate 40 .
• the substrate 40 is exemplary and preferably by means of a
• Positioning device 42 relative to the focus area 28 of the writing laser beam 14 positionally displaceable.
• the figures also show a coordinate system with mutually orthogonal axes x, y, z.
• Positioning device 42 is preferably designed to displace substrate 40 in all three spatial directions x, y, z, in particular also about a first axis of inclination parallel to the x-axis and/or about a second axis of inclination parallel to the y-axis tilt.
• the laser lithography device 10 also includes a control device (not shown), which includes a computing unit and a non-volatile memory.
• the focus area 28 of the laser writing beam 14 is displaced by the optics device 16, in particular by the scanning device 32, through the volume of lithographic material 22 (surrounding the entire structure).
• a write exposure dose is radiated locally into the lithographic material 22, so that structural areas 46 are defined locally, in particular using multi-photon absorption (cf. FIG. 2). For example, this will Lithographic material 22 polymerized locally and thus structured.
• the structure 44 can be defined in particular in that the focal area 28 runs through a scan manifold 48 along the scan surface 36 through the lithographic material 22 and in the process emits a sequence of laser pulses with a defined pulse rate and pulse length (in Figs 2, the scanning surface 36 is sketched in sections).
• the structural areas 46 are similar in shape or identical in shape to one another. The size of a written structure area 46 and thus a structure height is related to the introduced exposure dose.
• the target structure 44 can be computationally broken down into substructures which together approximate the target structure 44.
• the substructures can then be written sequentially.
• FIG. 2 shows an example in which the target structure 44 is broken down into two partial structures 50-1, 50-2 lying laterally next to one another, which in turn are made up of two writing layers 52-1, 52-2 lying one above the other.
• the left in FIG substructure 50-1 shown can be written by successively defining the writing positions 52-1, 52-2.
• the substrate 40 is moved downwards (in the negative z-direction) by a corresponding amount, for example after the writing of the first layer 52-1, in order to write the second layer 52-2.
• the writing area 34 is then displaced laterally to the optical axis (in the x-direction in the example shown in FIG. 2) in order to write the second partial structure 50-2.
• the writing area 34 can be relocated, for example, by relocating the substrate 40 and/or the lens module 30 .
• the second partial structure 50 - 2 is then written in an analogous manner.
• the displacement of the writing laser beam 14 and the location-dependent irradiation of the writing exposure dose within the scanning area 36 takes place according to predetermined writing instructions, which are preferably stored as a writing data record in the control device of the laser lithography device 10 .
• the write data record includes, by way of example and preferably, write exposure data which represent a location-dependent local write exposure dose for the scan multiplicity 48 .
• the writing exposure data can be greyscale image data representing the target structure 44, with different greyscales representing different exposure doses.
• the write data record preferably also includes control data for controlling the optics device 16.
• the write data record includes control data for controlling the scanning device 32 and/or the beam shaping device 24.
• an interface 54 between substrate 40 and lithographic material 22 is located (see FIG. 1). Specifically, by way of example and preferably, a position of the substrate 40 along the z-axis is determined, in which the focus area 28 lies within the interface 54 (referred to below as “focus position”).
• this focus position is identical for all scan points within the scan area 36 .
• a focus position regularly deviates from each other due to various effects within the scanning area 36 .
• the substrate 40 is tilted relative to the optical axis.
• the substrate surface 38 is curved or arched or has local unevenness.
• the scanning surface 36 can also deviate from the ideal shape of a plane, for example due to optical errors in the optical device 16.
• Fig. 2 visualizes the exemplary case that the substrate 40 is tilted about the y-axis and additionally the Scanning surface 36 has both a curvature and a tilt about the y-axis.
• Such deviations from the ideal configuration can result in an actually written structure 46 not exactly corresponding to the desired target structure 44, e.g. being distorted or incompletely manufactured (in the example shown in Fig. 2, for example, the upper right corner of the partial structures is 50 -1, 50-2 not completely filled by a structural area 46).
• the focus position of the substrate 40 is determined according to the method at a plurality of test positions 56-1 to 56-6 within the writing area 34 of the scanning surface 36 . If the target structure 44, as explained above with reference to FIG. 2, is made up of a plurality of substructures 50-1, 50-2, the focus positions are preferably determined separately for each substructure 50-1, 50-2. In this respect, the focus position is determined again at a plurality of positions within the writing area 34, in particular after the writing area 34 has been shifted to write a further partial structure.
• the focal area 28 of the writing laser beam 14 is shifted sequentially to different test positions 56 - 1 to 56 - 6 within the scanning area 36 by means of the optics device 16 .
• a test Exposure dose is radiated into the lithographic material 22 (visualized in FIG. 5 by the oval structures) and a detection radiation emitted by the lithographic material 22 and/or the substrate 40 as a response to the test exposure dose is detected.
• the laser lithography device 10 can then have a corresponding measuring device 58 (cf. FIG. 1).
• a plurality of laser pulses are irradiated at each test position 56 - 1 to 56 - 6 and meanwhile the substrate 40 is displaced along the z-axis by means of the positioning device 42 .
• Lithography material 22 as a function of a z-position of the substrate 40 represents.
• the detection radiation can in particular be radiation backscattered by the lithographic material 22 and/or the substrate 40 .
• a focus position of the substrate 40 can then be determined, for example, by detecting a reflection signal of the laser beam 14 at the interface 54, for example as a local intensity maximum. It is also possible for the detection radiation to be radiation generated by fluorescence. A focus position can then be determined, for example, in that a difference in the fluorescence signal at the transition from the, in particular fluorescent, lithographic material 22 and the, in particular non-fluorescent, substrate 40 is detected.
• the measuring device 58 can in particular have a fluorescence detector.
• the at least one write data record can then be adjusted accordingly in order to compensate for the deviations from an ideal system.
• at least one corrected write data record can be determined with the aid of a computer, for example by means of the control device, on the basis of which the laser lithography device 10 is then controlled in order to produce the target structure 44 .
• a local writing exposure dose is adjusted as a function of the determined position data.
• Fig. 4 shows a corresponding example in which, compared to the example shown in Figure 2, an exposure dose along the scan manifold 48 was adjusted in a location-dependent manner in order to achieve a better approximation of the structure 46 actually produced to the desired target structure 44 (the respective right-hand upper corner of the partial structures 50-1, 50-2 is now filled out better by structure areas 46).
• the corrected write data set can then include corrected write exposure data.
• the corrected write exposure data additionally or alternatively cause a curvature of the substrate surface 38 and/or local Unevenness in the substrate surface 38 can be compensated.
• target structure 44 it is also conceivable for the target structure 44 to be broken down into newly defined structure areas 46 by means of computation as a function of the determined position data.
• An example of this is outlined in FIG. 5, in which the substructures 50-1, 50-2 are now made up of four writing layers 52-1 to 52-4 instead of two.
• FIG. 6 visualizes the exemplary case in which the substrate 40 was aligned horizontally, starting from the configuration shown in FIG. 2 .
• the lens module 30, or a lens of the lens module 30, can be repositioned relative to the substrate 40, for example tilted, as a function of the determined position data.
• the corrected write data record can also contain corrected control instructions for a
• Positioning device (not shown) of the lens module 30 include.
• the corrected write data record can include corrected control data for the optics device 16, in particular for the beam shaping device 24 and/or the scanning device 32.
• a scanning device 32 is provided, which is designed to quickly change a Z position of the focus area during scanning and thus adapt a shape of the scanning surface 36 .
• the scanning device 32 can comprise, for example, adaptive lenses which are designed to quickly shift the focus area along the z-axis.
• a calibration laser beam that is separate from the write laser beam 14 can also be used to radiate in the test exposure dose.
• the calibration measurements for determining a focus position are then not carried out with the writing laser beam 14 itself.
• the laser lithography device can include, in particular, a second laser source (not shown) for emitting the calibration laser beam.
• the second laser source is in particular designed and arranged in such a way that the calibration laser beam has the same beam path 20 through the optics device 16 as the writing laser beam 14, in particular at least through the
• Beam shaping device 24 and / or the scanning device 32 runs.
• the focus position can also be determined by the writing laser beam 14 during the actual writing process.
• Laser writing beam 14 and calibration laser beam can therefore be used in parallel.

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