EP4289009A1 - Structure stratifiée de passivation et de conduction pour cellules solaires - Google Patents

Structure stratifiée de passivation et de conduction pour cellules solaires

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Publication number
EP4289009A1
EP4289009A1 EP21830934.2A EP21830934A EP4289009A1 EP 4289009 A1 EP4289009 A1 EP 4289009A1 EP 21830934 A EP21830934 A EP 21830934A EP 4289009 A1 EP4289009 A1 EP 4289009A1
Authority
EP
European Patent Office
Prior art keywords
layer
sicx
structure according
layer structure
tunnel oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21830934.2A
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German (de)
English (en)
Inventor
Kaining Ding
Manuel Pomaska
Kaifu QIU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of EP4289009A1 publication Critical patent/EP4289009A1/fr
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation

Definitions

  • the present invention relates to a transparent, tunnel oxide passivated layer structure for solar cells, in particular solar cells that are stable at high temperatures, and solar cells containing this transparent, passivating and conductive layer structure, which is preferably arranged on the front side of these solar cells, and also to a method for producing such a layer structure and solar cell.
  • the efficiency of solar cells can be increased by reducing loss mechanisms.
  • the parameters recombination of charge carriers and light efficiency are particularly important. A goal of research and development is therefore to avoid the recombination of charge carriers, to transfer free charge carriers with as little loss as possible and to optimally couple the light.
  • the rear contact consists of an ultra-thin tunnel oxide layer and a thin silicon layer.
  • an ultra-thin tunnel oxide rear contact is applied to the rear of the silicon cell, in most cases over the entire surface.
  • This silicon oxide passivation layer is only one to two nanometers thick.
  • the charge carriers can overcome this barrier layer by means of quantum mechanical tunneling processes.
  • a thin layer of highly doped silicon is deposited across the entire surface of this tunnel oxide layer [7],
  • n-type polycrystalline Si (poly-Si(n)) disadvantageously exhibits parasitic optical absorption due to its optical material properties.
  • a number of approaches have already been developed to reduce this parasitic absorption of the poly-Si layer.
  • the second solution using nc-SiOx as electron-selective material, also shows good passivation (iVoc > 725 mV), however, the layer thickness of this tunnel oxide can increase during nc-SiOx deposition and exceed 2 nm, which degrades carrier transport .
  • the poly-Si(n) In order to use the poly-Si(n) locally under the metal contacts, the poly-Si(n) has to be applied locally in a structured manner, which has to be realized with an expensive structuring process. A cost-effective structuring process would therefore have to be developed in order to reduce the complexity of production and thus the production costs, so that the solar cell produced can become established on an industrial scale.
  • the object of the invention is to overcome the disadvantages of the prior art and to provide the technology of tunnel oxide passivated contacts (TOPCon technology) in addition to rear contacting for the front side of solar cells, in particular for high-temperature solar cells, and thus also compared to the prior art Technology to provide improved solar cell efficiency. Furthermore, the object of the invention is to provide a method for producing these tunnel oxide-passivated contacts, in particular for the front side of solar cells, and to provide solar cells comprising these contacts.
  • TOPCon technology tunnel oxide passivated contacts
  • this layer structure can preferably be designed as a front-side contact of a solar cell, preferably a high-temperature solar cell.
  • the tunnel oxide layer should preferably have a layer thickness in the range of 1-2 nm in order to have sufficient chemically passivating and tunneling properties.
  • the poly-Si(n) commonly used for TOPCon backsides is replaced by wide-bandgap conducting microcrystalline (n-type) silicon carbide (pc-SiCx(n)). replaced and used in particular for TOPCon fronts.
  • An optical band gap of the hydrogenated // c-SiCx(n) layer in the range of 2.3 to 2.9 eV has proven advantageous.
  • the hydrogenated y c-SiCx(n) can now be used on the front of a solar cell.
  • the parasitic optical absorption of the hydrogenated y c-SiCx(n):H(n) is low compared to, for example, poly-Si(n) or nc-Si:H(n).
  • y c-SiCx(n):H(n) has an absorption coefficient a of 2210 cm' 1 in contrast to poly-Si(n) or nc-Si:H(n) with a value of 17737 cm -1 or 13511 cm 1 , so that a high layer thickness, for example in a range from 30 to 200 nm, is advantageously possible, which also advantageously protects against firing through of the paste for the electrical contact layer or the metallization of the solar cell and thus prevents direct contact of the paste with the c-Si semiconductor material of the solar cells. Furthermore, since no oxygen precursor is present during the deposition of the y c-SiCx(n) due to the material used, the thickness of the tunnel oxide also remains constant and the charge carrier transport at the tunnel oxide is ensured by tunneling.
  • carbon is preferably added to the material of the microcrystalline hydrogenated n-type silicon carbide, so that a C-rich and/or doped/alloyed //c-SiCx:H(n) layer can be provided.
  • the ratio of Si to C can advantageously be in a range of 1.0:0.7. However, a ratio of Si to C of 1.0:0.7 to 1.0 is also possible.
  • the diffusion energy of hydrogen can be increased, resulting in a lower diffusion coefficient for hydrogen, which in turn corresponds to a higher thermal stability of hydrogen in the network.
  • the quantifiable numerical values for bound H are of the order of 1 E22 cm' 3 .
  • a covering layer is applied to the y c-SiCx:H(n) layer.
  • This can consist of a material which prevents hydrogen effusion from the solar cell and in particular from the layered structure.
  • this has a concentration gradient with regard to the Si content and the N content.
  • the cover layer can, for example, be divided into three concentration sections with regard to the Si content and the N content: •
  • the lowest SiNx:H concentration section which is in direct contact with the y c-SiCx:H(n) layer, is Si-rich and thereby enables hydrogenation and good passivation quality.
  • the N/Si ratio (x) here is in a range of ⁇ 1, preferably from 0.3 to 0.9.
  • the uppermost SiNx:H concentration section is N-rich.
  • the N/Si ratio (x) here is in a range >1.
  • the N/Si ratio (x) is 1.1-1.5, for example.
  • This layer has a higher binding energy with hydrogen than that with silicon and, according to previous findings, prevents hydrogen effusion at high firing temperatures of up to 800° C.
  • N-rich SiNx is well suited as an anti-reflection layer.
  • the middle SiNx:H concentration section is a stoichiometric silicon nitride layer required for the Si-rich SiNx:H, stoichiometric SiNx:H, and N-rich SiNx:H layer stack.
  • a stoichiometric silicon nitride has an N/Si ratio (x) of 1.
  • This three-layer stack exhibits the best ability to block hydrogen leakage from the layer assembly of the present invention.
  • the invention also relates to a solar cell with tunnel oxide passivated contacts, comprising at least one crystalline n- or p-doped silicon layer to which a layer structure according to one of the preceding claims is applied as a front or front and rear contact.
  • the invention also relates to a method for producing the layer structure according to the invention and a solar cell containing this layer structure.
  • the procedure includes the following steps:
  • a cover layer is applied to the y c-SiCx:H layer.
  • this should consist of a material which prevents hydrogen effusion from the layers lying beneath it.
  • this consists of a SiNxH Layer and has the three-stage concentration gradient described above, in particular with regard to the Si content and the N content.
  • the monomethylsilane flow rate, the filament temperature and the substrate temperature are decisive for the SiC deposition.
  • SiN deposition silane and nitrogen flow rates, substrate temperature, power, and base pressure during deposition are critical. Among them, attention should be paid to the performance during the SiNx deposition, since the PEC VD deposition causes plasma damage to the SiC, which should be well controlled so as not to affect the passivation.
  • FIG. 3 Solar cell with hydrogenated p-type u c-SiCx as emitter.
  • FIG. 1 shows an example of a schematic structure of a high-temperature solar cell with the layer structure according to the invention on the front side of the solar cell.
  • the layer structure according to the invention with the transparent, tunnel oxide-passivated contacts comprises a tunneling silicon oxide layer SiOx 1, which is applied on the front side to the surface of the substrate layer 2 made of crystalline, n-doped silicon c-Si(n).
  • a hydrogenated u c-SiCx layer 3 is applied to the silicon oxide SiOx layer 1 .
  • the u c-SiCx 3 can be deposited, for example, by means of HWCVD, which leads to good crystallinity and conductivity. According to [1, 2], the conductivity of the u c-SiCx increases after a high-temperature annealing process, which has a positive effect on the vertical charge carrier transport. Due to the excellent surface passivation of the passivated contact, the c-Si bulk serves as the main channel for lateral charge carrier transport [3].
  • a cover layer 4 made of SiNx:H is applied to the u c-SiCx layer 3 and can be divided into the three areas described above: Si-rich, SiNx:H with the same ratio of Si and N to one another and N-rich.
  • a layer stack consisting of a boron emitter layer (p+ emitter) 5, an aluminum oxide layer (AI2O3) 6 and a cover layer 7 made of SiNx:H is applied to the c-Si(n) substrate layer 2, which has the same properties as the Covering layer 4 has on the front side.
  • Metal contacts 8, for example made of silver (Ag) are applied both to the front and to the rear on the areas where the cover layers 4 and 7 have been removed. This can be done using any method known from the prior art.
  • SiNx:H cap layer with a concentration gradient can be used both as a cap layer and as an anti-reflection layer.
  • Previous work [6] shows that N-rich SiNx shifts the hydrogen effusion peak from 550 °C to 800 °C. A temperature of 800 °C was considered to be the relevant temperature since the firing process during metallization is often carried out at this temperature.
  • the general hydrogen effusion can be further drastically reduced by stacking layers of SiNx with an N concentration gradient (Si-rich SiNx/SiN/N-rich SiNx). By using SiNx with a concentration gradient, hydrogen effusion can be prevented at high temperatures due to the high bond energies of the NH bonds and the compact density.
  • Hydrogen which effuses from the c-Si(n)/SiO2 interface or the hydrogenated u c-SiC at high temperatures from approx. 400°C, is retained in the cell and can return to the c-Si(n)/ Diffuse SiO2 interface and contribute to hydration.
  • boron-diffused emitters p + emitter
  • p + emitter boron-diffused emitters
  • the metal contacts are passivated, which can advantageously lead to an optimization of the recombination at the metal-semiconductor interface.
  • FIG. 3 differs from the embodiment according to FIG. 1 by the arrangement of a layer stack on the back of the solar cell, comprising a silicon oxide layer SiOx 9, a p-type u c-SiCx layer 11 and the previously described cover layer 7 made of SiNx:H.
  • a p-type o c-SiCx layer 11 was also advantageously used on the rear side in this embodiment, whereby u c-SiCx passivated contacts on both sides are made possible ( see figure 3).
  • This configuration of a solar cell is advantageous for the manufacturing method, since both SiNx and SiC can be deposited by means of HWCVD, and the manufacturing process is simplified as a result.
  • Both the AlOx tunnel oxide layer and the SiOx tunnel oxide layer can also be produced by an ALD (Atomic Layer Deposition) method.
  • ALD Atomic Layer Deposition
  • the precursors for this are different.
  • the precursors are tris(dimethylamino)silane (TDMAS) and oxygen, while for AlOx trimethylaluminum (AI(CH 3 )3, TMA) and deionized water (H2O, DIW) are used.
  • TDMAS tris(dimethylamino)silane
  • AI(CH 3 )3, TMA) and deionized water (H2O, DIW) are used.
  • the optical and electrical properties of the SiC layers are primarily influenced by the filament temperature during application [10; 11],
  • Table 3 Process parameters for applying a SiC layer using HWCVD of SiNx layers with a band gap of 2.6-5.7 eV and a refractive index at 632 nm of 1.8-3: dielectric material
  • Table 4 Process parameters for applying SiNx cap layers using PECVD, which have areas with different Si or N content:

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une structure stratifiée pour cellules solaires, de préférence pour cellules solaires à haute température, ayant des contacts passivés par oxyde tunnel sur le côté avant ou sur les côtés avant et arrière des cellules solaires constituées d'au moins une couche d'oxyde tunnel, en particulier d'une couche d'oxyde de silicium SiOx dans laquelle x = 1-2 ou d'une couche d'oxyde d'aluminium AlOx où x = 1-2 et d'une couche d'μc-SiCx (n), où x est 50,5, de préférence ≥ 0,5 à 0,9, où (n) = à dopage n et où dans un mode de réalisation avantageux, μc-SiCx (n) est une couche d'μc-SiCx:H (n) hydrogénée. La structure stratifiée selon l'invention peut de préférence être conçue comme contact avant d'une cellule solaire, de préférence d'une cellule solaire à haute température. L'invention concerne en outre un procédé de fabrication de la structure stratifiée et une cellule solaire contenant la structure stratifiée selon l'invention en tant que côté avant ou en tant que contact côté avant et côté arrière.
EP21830934.2A 2021-02-02 2021-12-15 Structure stratifiée de passivation et de conduction pour cellules solaires Pending EP4289009A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021000501.5A DE102021000501A1 (de) 2021-02-02 2021-02-02 Passivierende und leitende Schichtstruktur für Solarzellen
PCT/DE2021/000205 WO2022167018A1 (fr) 2021-02-02 2021-12-15 Structure stratifiée de passivation et de conduction pour cellules solaires

Publications (1)

Publication Number Publication Date
EP4289009A1 true EP4289009A1 (fr) 2023-12-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP21830934.2A Pending EP4289009A1 (fr) 2021-02-02 2021-12-15 Structure stratifiée de passivation et de conduction pour cellules solaires

Country Status (4)

Country Link
EP (1) EP4289009A1 (fr)
CN (1) CN116848645A (fr)
DE (1) DE102021000501A1 (fr)
WO (1) WO2022167018A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN117712199A (zh) 2022-09-08 2024-03-15 浙江晶科能源有限公司 太阳能电池及光伏组件
CN117238987A (zh) * 2022-09-08 2023-12-15 浙江晶科能源有限公司 太阳能电池及光伏组件

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US11257974B2 (en) * 2016-12-12 2022-02-22 Ecole polytechnique fédérale de Lausanne (EPFL) Silicon heterojunction solar cells and methods of manufacture

Also Published As

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DE102021000501A1 (de) 2022-08-04
WO2022167018A1 (fr) 2022-08-11
CN116848645A (zh) 2023-10-03

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