Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45565—Shower nozzles
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Definitions

• the invention relates to a gas outlet surface of a gas inlet element for a CVD reactor or a shield plate for a gas inlet element, which has a plurality of gas outlet openings arranged around a center, the centers of the gas outlet openings on the corner points polygonal, identically shaped and having a geometric center point Cells are located, the edges of the cells being defined by crossing reference lines, the reference lines being assigned to at least two sets of lines, and the reference lines each being a set of lines running straight and parallel to one another over the entire gas outlet surface.
• the invention also relates to a gas inlet member having such a gas outlet surface, a screen plate which is attached to a gas outlet surface of a gas inlet member, and a CVD reactor with such a gas inlet member or such a screen plate.
• a CVD reactor has a gas inlet element, with which process gases can be fed into a heatable process chamber. Substrates are arranged in the process chamber and are thermally treated in the CVD reactor, for example by depositing a layer on the substrate surface. [0004] Such gas inlet elements are described in DE 10 2011 051 778 A1, EP 1
• DE 1 778 describes a gas inlet element designed as a showerhead.
• the Gas outlet openings have a hexagonal arrangement.
• the center points of the gas outlet openings lie on the corner points of equilateral triangles.
• the edges of the cells formed by the equilateral triangles are each formed by reference lines.
• the reference lines are formed by sets of lines.
• Each family of lines has a plurality of equally spaced and parallel reference lines.
• the reference lines of the various sets of lines are inclined at 120 ° to each other.
• US 1 024 describes a showerhead in which the centers of the gas outlet openings lie on intersection points of reference lines which are formed by LERMAT see spirals.
• WO 2019/199620 A1 describes a gas inlet element with an underside facing a substrate, which has a plurality of inlet openings and outlet openings which are regularly distributed over the surface.
• Such a gas inlet element is used in CVD reactors in which a relative rotation takes place between the gas inlet element or gas outlet surface and the susceptor.
• the susceptor is rotated about an axis of rotation relative to the stationary gas inlet element.
• This axis of rotation defines a center.
• Gas inlet organs can have a circular gas outlet surface.
• Such a circular gas outlet surface has a center
• a circular gas outlet plate forming a gas outlet surface has a center.
• a circular cylinder-shaped gas inlet element has an end face which forms a gas outlet face and which has a center.
• the gas outlet openings have a defined position in relation to such a center.
• each gas outlet opening sweeps over an annular surface of the susceptor, the center of which is the center, that is, the axis of rotation. If the center is in the center of a central gas outlet opening, an annular surface remains around this circular area, over which no gas outlet opening moves during rotation.
• a similar situation arises when the center coincides with the center point of a cell, the corner points of which are formed by the centers of adjacent gas outlet openings.
• not every circular arc line laid around the center runs through at least one gas outlet opening. There are thus, for example, circular “gaps” in the central area of the gas outlet surface, which can lead to an insufficient supply of the process chamber with process gas.
• the invention is based on the object of improving the process technology feed-in of process gases, particularly in the central area of the process chamber.
• the location of at least one central gas outlet opening is defined in relation to the center of a rotationally symmetrical body, for example a gas outlet surface, a gas outlet plate, a shield plate, a gas inlet element or the like.
• the invention proposes that one of the preferably identical outlet openings forms a central outlet opening, the center being arranged in the cross-sectional area of the gas outlet opening, offset from the Center of the preferably circular gas outlet opening.
• the center lies approximately on the edge of the gas outlet opening, so that the central gas outlet opening rotates around the center as it were during the relative rotation.
• the distance between the central gas outlet opening and a gas outlet opening which is closest to it is smaller than twice the diameter of a gas outlet opening. It is advantageous if the distance between the edges of two adjacent gas outlet openings is smaller than the diameter of the gas outlet opening, in particular the central gas outlet opening.
• the gas outlet openings are arranged on the gas outlet surface in such a way that, in particular in the central region of the gas outlet surface, any circular arc line drawn around the center, at least one
• the reference lines of the array of lines, the intersection points of which define the position of the center points of the gas outlet openings, can run in a straight line and parallel to one another over the entire gas outlet surface, so that a large number of regular polygons are formed.
• Triangular or square polygons can be formed
• the cells which are defined in this way by the corner points of the reference lines and whose edges are sections of the reference lines, have geometric center points.
• the center points can be the centers of area of cells.
• the cells form a central cell.
• the center is offset from each of the corner points and from the center of the surface.
• the cells can have edges of the same length.
• the center can around be about 1/3 ⁇ 10% of the length of the edge from a corner point.
• the center can be spaced apart from the corner point in a direction of an angle bisector of two lines crossing at a corner point. It can also be provided that the length of an edge is approximately 7.07 mm ⁇ 10%.
• the gas outlet openings can have a diameter of 4 mm ⁇ 10%.
• the center can be 2 mm ⁇ 10% from a corner point.
• the fiction like ackede arrangement of the gas outlet openings on a gas outlet surface can be realized light on a gas outlet plate of a gas inlet member.
• the gas outlet plate delimits a volume through which a cooling liquid can flow, through which a cooling liquid can flow and / or into which a process gas is fed which can enter a process chamber through the gas outlet openings. But it is also provided that the arrangement of the gas outlet openings is realized on a screen plate. Such a faceplate is adjacent to the
• Gas outlet plate attached to the gas inlet member.
• the gas outlet openings of the shield plate are aligned with the gas outlet openings of the gas outlet plate of the gas inlet member.
• the gas outlet plate can consist of metal, stainless steel, aluminum or the like.
• the faceplate can be made of a ceramic mix material, coated graphite or made of metal.
• the faceplate can be made of a porous material. It can have a rough surface.
• the invention also relates to a CVD reactor with a gas- and pressure-resistant housing made of metal.
• a gas inlet element which has the properties described above and in particular has the shape of a showerhead.
• the gas outlet surface extends in a plane of rotation of an axis of rotation with which a susceptor is driven in rotation.
• a top of the susceptor forms a bottom surface of a process chamber.
• the gas outlet surface of the gas inlet element forms the top of a process chamber.
• the axis of rotation of the susceptor defines The center of the gas inlet member, which, as described above, is both offset from the center point of a central gas outlet opening and offset from the center point of a central cell of an arrangement of gas outlet openings, is arranged.
• a shield plate is arranged between the gas outlet plate of the gas inlet element and susceptor, which has the properties described above.
• the shield plate can touch the underside of the gas outlet plate facing the susceptor.
• the shield plate can also be spaced from the underside of the gas outlet plate.
• a temperature control device can be provided.
• the susceptor can be tempered with the temperature control device.
• the temperature control device can be a heating device.
• the gas inlet element can also have a temperature control device in order to cool or heat the gas outlet surface.
• the gas outlet plate and / or the faceplate can consist of graphite or of a graphite coated with SiC or a graphite coated with TaC.
• the surfaces of the gas inlet element are preferably stainless steel surfaces.
• the walls and the gas outlet plate of the gas inlet element can thus consist of stainless steel.
• the gas outlet openings of the shield plate can be aligned with the gas outlet openings of the gas outlet plate of the gas inlet element. But they can also be arranged offset to it.
• the invention also relates to a method for operating a CVD reactor described above, in which the susceptor is driven in rotation about an axis of rotation which defines a center which is offset both from the corner points and offset from the center of the area of a central cell lies.
• FIG. 1 shows a schematic section through a CVD reactor of a first exemplary embodiment
• FIG. 2 shows the bottom view of a gas outlet surface 16 of a gas inlet element 2 along the line II-II in FIG.
• Fig. 3 enlarges the detail III in Figure 2,
• Fig. 4 enlarges the detail IV in Figure 3 and
• Fig. 5 shows a representation according to Figure 1 of a secondforsbei game.
• Figures 1 and 5 show schematically the structure of a CVD reactor, which is preferably an MOCVD reactor in which a coating process is carried out in which III-V substrates or IV substrates, such as silicon -Substrates or the like, are coated with III-V layers.
• the layers can be, for example, gallium arsenide, gallium phosphide or gallium nitride layers.
• a process gas which is in particular a gas mixture, is fed into a gas distribution volume 6 of a gas inlet element 2 designed as a showerhead through a gas supply line 19.
• the gas inlet element can have several gas distribution volumes 6, which are separated from one another and each have gas outlet openings 7 assigned to them.
• a gas of the process gas is fed in at mina 6, for example a hydride of an element of main group V or an organometallic compound of an element of III. Main group.
• the CVD reactor 1 can be evacuated with a pump connected to a gas outlet (not shown).
• the detail of the gas outlet surface 16 shown enlarged in FIG. 3 shows that the gas outlet openings 7 each have a circular outline. In the exemplary embodiment, all of the gas outlet openings 7 have the same circular outline and a diameter D of approximately 4 mm.
• the edges of two gas outlet openings 7 which are closest to one another are spaced less from one another than the diameter of a gas outlet opening 7.
• the gas outlet openings 7 are evenly distributed over the gas outlet surface 16 in a hexagonal arrangement.
• the description of the arrangement of the gas outlet openings 7 takes place in this disclosure by means of reference lines 13, 13 ', 13 ".
• the reference lines of the different sets of lines are inclined to one another at an angle of 120 °.
• a gas outlet opening 7 is arranged at all points of intersection of the reference lines 13, 13 ', 13 ".
• the reference lines 13, 13 ', 13 "thus define a plurality of identically designed cells 8, each of which has the shape of an equilateral triangle.
• two sets of lines can have reference lines offset by 90 ° to one another, so that the cells 8 have the shape of rectangles or squares.
• the corner points 8 'of the cells 8 are spaced apart from one another by a distance a of 7.07 mm in the exemplary embodiment.
• the gas outlet openings 7 have a center point which coincides with the corner points 8 'and a diameter D of approximately 4 mm.
• FIG. 4 shows a center 10, which can be the geometric center point of the gas outlet surface 16, which coincides with the center of the axis of rotation 18 when used.
• the center 10 is neither in a geometric center point 9 of the cell 8 nor in a corner point 8 'of the cell 8.
• the center 10 is offset by approximately 2 mm with respect to the corner point 8'.
• the center 10 is here on the edge of a central gas outlet opening 7.1.
• the center 10 can lie between the center 9 of the cell 8 and the center of the central gas outlet opening 7.1.
• the center 10, which can also be the geometric center of a gas outlet plate 15 or the center of an end face of a gas inlet organ 2, can, however, also be arranged at any other point within the cross-sectional area of the central gas outlet opening 7.1, but not in the center of the cross-sectional area.
• the two gas outlet openings 7.2 and 7.3 are spaced equidistant from the central gas outlet opening 7.1 in this arrangement.
• the distance b of the two edges of the central gas outlet opening 7.1 from the adjacent gas outlet opening 7.2 or 7.3 is smaller than the diameter D, so that the area of the gas outlet opening 7 with a relative rotation about the Center 10 sweeps over a circular area which is slightly larger than the annular spacing area between center 10 and the edge of the adjacent gas outlet openings 7.2, 7.3.
• the exemplary embodiment shown in FIG. 5 differs from the exemplary embodiment shown in FIG. 1 essentially only in that a shielding plate 14 is arranged on the surface of the gas outlet plate 15 facing the process chamber, the gas outlet openings 17 of which with the gas outlet openings 7 cursing.
• the arrangement of the gas outlet openings 17 corresponds to that shown in FIGS. 2, 3 and 4.
• the shield plate 14 is arranged here in such a way that its gas outlet openings 17 are aligned with the gas outlet openings 7 of the gas outlet plate 15.
• the gas outlet openings 17 can, however, also be arranged offset with respect to the gas outlet openings 7. In this case, however, it is provided that the central gas outlet opening 17 of the shield plate 14 has the previously described Fage.
• a gas outlet surface 16 which is characterized in that the center 10 is offset from the center point 9 in the surface of a cell 8.
• a gas outlet surface 16 which is characterized in that the cells 8 are regular polygons and / or triangles or squares.
• a gas outlet surface 16 which is characterized in that the length of the edge 8 "is 7.07 mm ⁇ 10 percent.
• a gas inlet element characterized by a gas outlet surface 16 according to one of claims 1 to 4.
• a gas inlet element which is characterized in that the gas outlet surface 16 is formed by a shield plate 14 which is attached to the gas outlet plate 15 with a identical arrangement of gas outlet openings 7 is arranged.
• a CVD reactor 1 with a housing characterized by a gas outlet surface according to one of the preceding claims.
• a CVD reactor which is characterized in that the gas outlet surface 16 is formed by a faceplate 14 which is arranged on the gas outlet plate 15 with an identical arrangement of gas outlet openings 7.
• a gas inlet element 2 for a CVD reactor with a gas outlet surface characterized by a shield plate 14 arranged on the surface of the gas outlet plate 15 facing the process chamber, the gas outlet openings 17 of which are aligned with the gas outlet openings 7 of the gas inlet element 2.
• a gas outlet surface which is characterized in that the center 10 is spaced and / or spaced from the corner 8 'in a direction of an angle bisector 12 of two reference lines 13, 13', 13 "crossing at a corner 8 ' that the length of an edge is 8 "7.07 mm ⁇ 10% and / or that the mutually identical gas outlet openings 7, 17 have a circular outline and / or that the length of the edge 8 ′′ is smaller than twice the diameter of the gas outlet openings 7, 17 and / or that the gas outlet openings 7, 17 have a diameter of 4 mm ⁇ 10% and / or that the center 10 lies on the edge of a gas outlet opening 7, 17 and / or that the center 10 is 2 mm ⁇ 10% offset from the corner point 8 '.
• the diameter of the gas outlet openings 7, 17 can also be smaller than 2 mm, for example the diameter can be 1.65 mm. In such a constellation, the distance between two adjacent gas outlet openings can be 7.07 mm. The center of the gas outlet opening closest to the center of the gas outlet surface can be spaced 2.3 mm from the center.

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• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Crystallography & Structural Chemistry (AREA)
• Mechanical Engineering (AREA)
• Chemical Vapour Deposition (AREA)

Applications Claiming Priority (2)

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• 2019
  • 2019-07-12 DE DE102019119019.3A patent/DE102019119019A1/de active Pending
• 2020
  • 2020-07-10 WO PCT/EP2020/069473 patent/WO2021009019A1/de unknown
  • 2020-07-10 KR KR1020227004440A patent/KR20220032596A/ko active Search and Examination
  • 2020-07-10 JP JP2022501030A patent/JP2022540179A/ja active Pending
  • 2020-07-10 US US17/626,113 patent/US20220259737A1/en active Pending
  • 2020-07-10 CN CN202080059285.XA patent/CN114269968A/zh active Pending
  • 2020-07-10 EP EP20742191.8A patent/EP3997256A1/de active Pending
  • 2020-07-10 TW TW109123316A patent/TW202118892A/zh unknown

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