EP3976533A1 - Procédé de production de trichlorosilane comprenant des particules de silicium à structure optimisée - Google Patents

Procédé de production de trichlorosilane comprenant des particules de silicium à structure optimisée

Info

Publication number
EP3976533A1
EP3976533A1 EP19728926.7A EP19728926A EP3976533A1 EP 3976533 A1 EP3976533 A1 EP 3976533A1 EP 19728926 A EP19728926 A EP 19728926A EP 3976533 A1 EP3976533 A1 EP 3976533A1
Authority
EP
European Patent Office
Prior art keywords
silicon
grain
particles
fluidized bed
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19728926.7A
Other languages
German (de)
English (en)
Inventor
Karl-Heinz RIMBÖCK
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of EP3976533A1 publication Critical patent/EP3976533A1/fr
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon

Definitions

  • the invention relates to a method for producing
  • the starting material for the production of chips or solar cells is usually made by decomposing its volatile
  • Halogen compounds especially trichlorosilane (TCS, HSiCls).
  • Polycrystalline silicon can by means of the
  • Siemens process can be produced in the form of rods, with polysilicon being deposited in a reactor on heated filament rods.
  • the process gas is usually a
  • polysilicon granules can be produced in a fluidized bed reactor. Silicon particles are thereby produced using a
  • Gas flow fluidized in a fluidized bed which is heated to high temperatures by a heating device.
  • a silicon-containing reaction gas such as TCS
  • a pyrolysis reaction takes place on the hot particle surface, causing the particles to grow in diameter.
  • WO2016 / 198264A1 is based on the following reactions:
  • chlorosilanes can be made from silicon (usually metallurgical silicon Si mg ) with the addition of hydrogen chloride (HCl) in one
  • TCS and STC silicon tetrachloride
  • the low temperature conversion (NTK) according to reaction (2) is a weakly endothermic process and is usually used in
  • the NTK can take place in a fluidized bed reactor in the presence of Si mg under high pressure (0.5 to 5 MPa) at temperatures between 400 and 700 ° C.
  • An uncatalyzed reaction procedure is under
  • the high temperature conversion according to reaction (3) is an endothermic process. This process usually takes place in a reactor under high pressure at temperatures between 600 and 1200 ° C.
  • the requirements placed on silicon in terms of chemical composition and particle size have been studied relatively well
  • DE4303766 A1 discloses a process for producing methylchlorosilanes from silicon and chloromethane in the presence of a copper catalyst and, if appropriate, a promoter
  • Methylchlorosilanes based on the surface of the silicon used are controlled by the structure of the silicon, the method being characterized in that the
  • Structural code QF is selected, the structural code QF being determined by
  • Methylchlorosilanes in the desired direction refers to the size of the crystals of the polycrystalline silicon and the composition and storage of the intermetallic phases that arise in the course of cooling and solidification in the manufacturing process
  • Main impurities for example Al, Ca, Fe, Ti, with
  • the structure code QF can be used for
  • Trichlorosilane by reacting silicon powder with HCl gas in a fluidized bed reactor between 280 and 300 ° C, characterized by the use of a silicon powder obtained by gas atomization of molten silicon.
  • the silicon powder preferably has in this process
  • Fluidized bed reactors specifically fine-grain fractions of the
  • Kremniiorganich. Soed. 1988, 27-35 a working grain for silicon from 70 to 500 ⁇ m, with 70 ⁇ m being the minimum and 500 ⁇ m being the maximum grain size (grain size limits or range limits) and the numerical values being equivalent diameter.
  • Lobusevich et al. state that when selecting the contact mass grain size for the synthesis of methylchlorosilanes, ethylchlorosilanes and TCS, the interaction between solid and gas must be taken into account in order to achieve maximum stability and efficiency of the process.
  • reaction with silicon particles of the working fraction of 2 to 3 mm already takes place at 250 ° C.
  • the reaction rate corresponds to the uncatalyzed variant at 400 ° C.
  • both for the catalyzed and for the uncatalyzed variant - increasing the silicon particle size leads to increased TCS selectivity and reduced formation of poly (chloro) silanes (high boilers).
  • the present invention was based on the object of providing a particularly economical process for producing chlorosilane via HC.
  • the invention relates to a process for the preparation of chlorosilanes which are selected from the general formulas 1 and 2
  • n 0 to 3
  • n mean values from 0 to 4,
  • Grain mixture means that is introduced into the fluidized bed reactor, contains at least 1% by mass of silicon-containing particles S, which by a structural parameter S
  • the TCS selectivity increases. This is because, according to the invention, the particles S with a structure parameter S of> 0 preferably have lower mean particle sizes than those particles with a
  • “Granulation” is understood to mean a mixture of silicon-containing particles, which are produced, for example, by atomizing or granulating silicon-containing melts and / or by comminuting lumpy silicon
  • the lumpy silicon can preferably have an average particle size of> 10 mm, particularly preferably> 20 mm, in particular> 50 mm
  • Grain sizes can essentially be classified into fractions by sieving and / or sifting.
  • a mixture of different grain sizes can be referred to as a grain mixture and the grains of which the grain mixture is made up as grain fractions.
  • Grain fractions can be classified relative to one another according to one or more properties of the fractions, such as in
  • Coarse grain fractions and fine grain fractions are possible at a grain mixture, divide more than one fraction graining ⁇ in fixed relativised fractions.
  • the sphericity of a particle describes the relationship between the surface area of a particle image and the circumference. Accordingly, a spherical particle would have a sphericity close to 1, while a jagged, irregular particle image would have a roundness close to zero.
  • the center of gravity of a particle image is first determined. Then, in each measurement direction, distances from edge to edge are laid through the specific center of gravity and the ratio of the two resulting route sections is measured. The value of the symmetry factor is calculated from the smallest ratio of these radii. For highly symmetrical figures such as circles or squares, the value of the respective symmetry factor is 1.
  • shape parameters that can be determined using dynamic image analysis are the width / length ratio (measure of the extent or elongation of a particle) and the convexity of particles. However, since these are already indirectly contained in the structure parameter S in the form of the symmetry factor, their determination in the method according to the invention can be dispensed with.
  • the bulk density is defined as the density of a mixture of a particulate solid (so-called bulk material) and a
  • the bulk density of the Grain fraction of the working grain with structural parameter S ⁇ O is preferably 0.8 to 2.0 g / cm 3 , particularly preferably 1.0 to 1.8 g / cm 3 , very particularly preferably 1.1 to 1.6 g / cm 3 , in particular 1.2 to 1.5 g / cm 3 .
  • the bulk density can be determined by the ratio of the mass of the bulk to the bulk volume in accordance with DIN ISO 697.
  • the mean, mass-weighted particle solids density of the particles S of the grain fraction with structure parameter SA0 is preferably 2.20 to 2.70 g / cm 3 , particularly preferably 2.25 to 2.60 g / cm 3 , very particularly preferably 2.30 to 2, 40 g / cm 3 , in particular 2.31 to 2.38 g / cm 3 .
  • the determination of the density of solid substances is described in DIN 66137-2: 2019-03.
  • the grain fraction with structure parameter SA0 is in the
  • Working granules preferably in a mass fraction of at least 1 mass%, particularly preferably at least 5 mass%, very particularly preferably at least 10 mass%, in particular at least 20 mass%.
  • Particles S with S 2 0 preferably have one
  • Particle size parameter dso which is 0.5 to 0.9 times the particle size parameter dso of the particles with S ⁇ 0.
  • the working grain preferably has a particle size parameter dso of 70 to 1000 pm, particularly preferably from 80 to 800 pm, very particularly preferably from 100 to 600 pm,
  • the difference between the particle size parameters d9o and dio represents a measure of the width of a grain size or a
  • Grain fraction The quotient of the width of a grain or a grain fraction and the respective particle size parameter dso corresponds to the relative width. She can For example, they can be used to determine particle size distributions with very different mean
  • the relative width of the grain is preferably the
  • the determination of the particle sizes and particle size distribution can be done according to ISO 13320 (laser diffraction) and / or ISO 13322
  • Particle size parameters from particle size distributions can be done according to DIN ISO 9276-2.
  • Working grain has a mass-weighted surface area of 80 to 1800 cm 2 / g, preferably from 100 to 600 cm 2 / g, particularly preferably from 120 to 500 cm 2 / g, in particular from 150 to 350 cm 2 / g.
  • a 2-modal distribution density function has two maxima.
  • the contact mass is, in particular, the mixture of grains that is in contact with the reaction gas.
  • Si mg which usually has a purity of 98 to 99.9%.
  • a composition with 98% by mass of silicon metal for example, is typical, with the remaining 2% by mass generally being composed for the most part of the following elements, which are selected from: Fe, Ca, Al, Ti, Cu, Mn, Cr , V, Ni, Mg, B, C, P and 0.
  • the following elements selected from among: Co, W, Mo, As, Sb, Bi, S, Se, Te, Zr, Ge, Sn can also be contained , Pb, Zn, Cd, Sr, Ba, Y and CI.
  • the silicon metal fraction is preferably greater than 75% by mass, preferably greater than 85% by mass,
  • Catalyst are positively influenced, in particular
  • the catalyst can be one or more elements from the group with Fe, Cr, Ni, Co, Mn, W, Mo, V, P, As, Sb, Bi, O, S, Se, Te, Ti, Zr , C, Ge, Sn, Pb, Cu, Zn, Cd, Mg, Ca, Sr,
  • the catalyst is preferably selected from the group with Fe, Al, Ca, Ni, Mn, Cu, Zn, Sn, C, V, Ti, Cr, B, P, O, CI and mixtures thereof.
  • these catalytically active elements are already present in silicon as an impurity in a certain proportion
  • oxidic or metallic form as silicides or in other metallurgical phases, or as oxides or chlorides. Their proportion depends on the purity of the silicon used.
  • the catalyst can, for example, in metallic, alloyed and / or salt-like form of the working grain and / or
  • Contact mass are added. These can in particular be chlorides and / or oxides of the catalytically active elements. Preferred compounds are CuCl, CuCl2, CuO or mixtures thereof.
  • the working grain can also contain promoters, for example Zn and / or zinc chloride.
  • the elemental composition of the silicon used and the contact compound can be determined, for example, by means of X-rays
  • XRF fluorescence analysis
  • ICP-MS ICP-based analysis methods
  • ICP-OES ICP-OES
  • AAS atomic absorption spectrometry
  • the catalyst is preferably in a proportion of 0.1 to 20% by mass, particularly preferably 0.5 to 15% by mass, in particular 0.8 to 10% by mass, particularly preferably 1 to 5 mass% -%, available.
  • the grain fractions with structural parameters SCO and ShO are preferably used as a prefabricated grain mixture
  • grain fractions with structural parameters SCO and ShO can also be used separately, in particular via separate supply lines and
  • any further constituents of the contact compound which may be present can also be added separately or as a constituent of one of the two grain fractions.
  • the process is preferably carried out at a temperature of 280 to 400.degree. C., particularly preferably 340 to 360.degree.
  • the absolute pressure in the fluidized bed reactor is preferably 0.01 to 0.6 MPa, particularly preferably 0.03 to 0.35 MPa, in particular 0.05 to 0.3 MPa.
  • the reaction gas preferably contains before entering the
  • Reactor at least 50% by volume, preferably at least 70% by volume, particularly preferably at least 90% by volume, HCl.
  • the reaction gas can also contain one or more components
  • HCl and the contact mass or the grain mixture or its grain fractions are added continuously, in particular during the reaction, in such a way that the above-mentioned ratio is established.
  • These components can, for example, come from hydrogen recovered in a composite.
  • the reaction gas can also contain a carrier gas which does not take part in the reaction, for example nitrogen or a noble gas such as argon.
  • the composition of the reaction gas is usually determined by means of Raman and infrared spectroscopy and gas chromatography before it is fed to the reactor. This can be done both via random samples and
  • a quotient of the fluidized bed height to the reactor diameter is preferably 10: 1 to 1: 1, preferably 8: 1 to 2: 1, particularly preferably 6: 1 to 3: 1.
  • Fluidized bed height is the thickness or extent of the fluidized bed.
  • chlorosilanes produced by the process according to the invention which are selected from the general formulas 1 and 2 are preferably at least one chlorosilane selected from the group consisting of monochlorosilane, dichlorosilane, TCS, Si 2 Cl 6 and HSX 2 Cl 5.
  • Chlorosilanes of the general formula 1 are particularly preferably TCS.
  • halosilanes can be produced as by-products, for example monochlorosilane (HsSiCl), dichlorosilane (H2SiCl2), Silicon tetrachloride (STC, S1CI4) as well as di- and oligosilanes.
  • impurities such as hydrocarbons,
  • Organochlorosilanes and metal chlorides can be by-products.
  • the inventive method is preferably in one
  • the network includes in particular the following
  • FIG. 1 shows an example of a fluidized bed reactor 1 for carrying out the method according to the invention.
  • Reaction gas 2 is preferably blown into the contact mass from below and optionally from the side (e.g. tangential or orthogonal to the gas flow from below), whereby the particles of the contact mass are fluidized and form a fluidized bed 3.
  • the reaction is started by means of a heating device arranged outside the reactor
  • the fluidized bed 3 is heated. There is usually no heating during continuous operation
  • a part of the particles is with the gas flow from the fluidized bed 3 into the free space 4 above the
  • the space 4 is through a characterized very low solids density, this decreasing in the direction of the reactor outlet 5.
  • silicon was of the same type in terms of purity, quality and content of minor elements and
  • the grain fractions used in the working grains were produced by breaking lumpy Si mg (98.9% by mass Si) and subsequent grinding or by atomization techniques known to those skilled in the art to produce particulate Si mg (98.9% by mass Si). If necessary, classification was carried out by sieving / sifting. In this way, grain fractions with specific values for structural parameters S were produced in a targeted manner. By combining and mixing these
  • the operating temperature of the fluidized bed reactor was around 320 ° C. during the tests.
  • the temperature was kept approximately constant over the entire test period with the aid of cooling. HCl was added and the working grain was metered in so that the height the fluidized bed over the entire test period in
  • ms is the mass fraction of particles S that have a structure parameter S> 0.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

L'invention concerne un procédé de production de chlorosilanes choisis parmi les formules générales suivantes (1) : HnSiCl4-n et (2) : HmCl6-mSi2, dans lesquelles n représente des valeurs de 0 à 3 et m des valeurs de 0 à 4, dans un réacteur à lit fluidisé, dans lequel un gaz de réaction contenant du chlorure d'hydrogène est mis en réaction avec une masse de contact particulaire, qui contient du silicium, à des températures comprises entre 280 et 400 °C, le granulat de travail, qui représente le granulat ou mélange de granulats introduit dans le réacteur à lit fluidisé, contenant des particules S contenant au moins 1 % en masse de silicium, lesquelles sont décrites par un paramètre structural S, S présentant une valeur d'au moins 0 et étant calculé comme suit : équation (1), dans laquelle φS représente un facteur de sphéricité pondéré en symétrie, ρSD la masse volumique apparente [g/cm3], ρF la masse volumique de solide particulaire moyenne [g/cm3].
EP19728926.7A 2019-05-29 2019-05-29 Procédé de production de trichlorosilane comprenant des particules de silicium à structure optimisée Pending EP3976533A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2019/064116 WO2020239228A1 (fr) 2019-05-29 2019-05-29 Procédé de production de trichlorosilane comprenant des particules de silicium à structure optimisée

Publications (1)

Publication Number Publication Date
EP3976533A1 true EP3976533A1 (fr) 2022-04-06

Family

ID=66776318

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19728926.7A Pending EP3976533A1 (fr) 2019-05-29 2019-05-29 Procédé de production de trichlorosilane comprenant des particules de silicium à structure optimisée

Country Status (7)

Country Link
US (1) US20220234901A1 (fr)
EP (1) EP3976533A1 (fr)
JP (2) JP2022534930A (fr)
KR (1) KR20220013417A (fr)
CN (1) CN113905983A (fr)
TW (1) TWI744873B (fr)
WO (1) WO2020239228A1 (fr)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO166032C (no) * 1988-12-08 1991-05-22 Elkem As Fremgangsmaate ved fremstilling av triklormonosilan.
DE4303766A1 (de) 1993-02-09 1994-08-11 Wacker Chemie Gmbh Verfahren zur Herstellung von Methylchlorsilanen
DE10118483C1 (de) * 2001-04-12 2002-04-18 Wacker Chemie Gmbh Staubrückführung bei der Direktsynthese von Chlor- und Methylchlorsilanen in Wirbelschicht
NO321276B1 (no) * 2003-07-07 2006-04-18 Elkem Materials Fremgangsmate for fremstilling av triklorsilan og silisium for bruk ved fremstilling av triklorsilan
NO20043828L (no) * 2004-09-13 2006-03-14 Elkem As Fremgangsmate for fremstilling av triklorsilan, fremgangsmate for fremstilling av silisium og silisium for bruk ved fremstilling av triklorsilan
NO334216B1 (no) * 2010-08-13 2014-01-13 Elkem As Fremgangsmåte for fremstilling av triklorsilan og silisium for bruk ved fremstilling av triklorsilan
DE102013215011A1 (de) * 2013-07-31 2015-02-05 Wacker Chemie Ag Verfahren zur Herstellung von Trichlorsilan
DE102015210762A1 (de) 2015-06-12 2016-12-15 Wacker Chemie Ag Verfahren zur Aufarbeitung von mit Kohlenstoffverbindungen verunreinigten Chlorsilanen oder Chlorsilangemischen
CN105396588A (zh) * 2015-12-16 2016-03-16 钟俊超 耐磨的微球形CuO/SiO2催化剂的制备方法及其应用
EP3442981B1 (fr) * 2016-04-15 2020-02-26 Wacker Chemie AG Procédé pour la préparation d'organochlorosilanes dans un procédé à lit tourbillonnant
WO2019068335A1 (fr) * 2017-10-05 2019-04-11 Wacker Chemie Ag Procede de preparation de chlorosilanes
EP3691995B1 (fr) * 2017-10-05 2021-03-17 Wacker Chemie AG Procédé de production de chlorosilanes au moyen d'un catalyseur choisi dans le groupe constitué par co, mo, w

Also Published As

Publication number Publication date
JP2022534930A (ja) 2022-08-04
CN113905983A (zh) 2022-01-07
TW202043148A (zh) 2020-12-01
JP2024028751A (ja) 2024-03-05
US20220234901A1 (en) 2022-07-28
WO2020239228A1 (fr) 2020-12-03
TWI744873B (zh) 2021-11-01
KR20220013417A (ko) 2022-02-04

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