EP3955060A4 - Composition de masque dur très épais en carbone déposé par centrifugation et procédé de formation de motifs l'utilisant - Google Patents

Composition de masque dur très épais en carbone déposé par centrifugation et procédé de formation de motifs l'utilisant Download PDF

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Publication number
EP3955060A4
EP3955060A4 EP20788271.3A EP20788271A EP3955060A4 EP 3955060 A4 EP3955060 A4 EP 3955060A4 EP 20788271 A EP20788271 A EP 20788271A EP 3955060 A4 EP3955060 A4 EP 3955060A4
Authority
EP
European Patent Office
Prior art keywords
same
hard mask
patterning method
mask composition
carbon hard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20788271.3A
Other languages
German (de)
English (en)
Other versions
EP3955060A1 (fr
Inventor
Su Jin Lee
Gi Hong Kim
Seung Hun Lee
Seung Hyun Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Youngchang Chemical Co Ltd
Original Assignee
Youngchang Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Youngchang Chemical Co Ltd filed Critical Youngchang Chemical Co Ltd
Publication of EP3955060A1 publication Critical patent/EP3955060A1/fr
Publication of EP3955060A4 publication Critical patent/EP3955060A4/fr
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/40—Polymerisation processes
    • C08G2261/42—Non-organometallic coupling reactions, e.g. Gilch-type or Wessling-Zimmermann type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
EP20788271.3A 2019-04-09 2020-03-25 Composition de masque dur très épais en carbone déposé par centrifugation et procédé de formation de motifs l'utilisant Pending EP3955060A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190041402A KR102240213B1 (ko) 2019-04-09 2019-04-09 고두께 스핀 온 카본 하드마스크 조성물 및 이를 이용한 패턴화 방법
PCT/KR2020/004041 WO2020209527A1 (fr) 2019-04-09 2020-03-25 Composition de masque dur très épais en carbone déposé par centrifugation et procédé de formation de motifs l'utilisant

Publications (2)

Publication Number Publication Date
EP3955060A1 EP3955060A1 (fr) 2022-02-16
EP3955060A4 true EP3955060A4 (fr) 2023-06-07

Family

ID=72751914

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20788271.3A Pending EP3955060A4 (fr) 2019-04-09 2020-03-25 Composition de masque dur très épais en carbone déposé par centrifugation et procédé de formation de motifs l'utilisant

Country Status (7)

Country Link
US (1) US20220179318A1 (fr)
EP (1) EP3955060A4 (fr)
JP (1) JP7267451B2 (fr)
KR (1) KR102240213B1 (fr)
CN (1) CN113661445A (fr)
TW (1) TWI749496B (fr)
WO (1) WO2020209527A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102350590B1 (ko) * 2021-05-17 2022-01-12 영창케미칼 주식회사 증발감량이 적은 스핀 온 카본 하드마스크 조성물 및 이를 이용한 패턴화 방법
KR20230036480A (ko) * 2021-09-07 2023-03-14 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법
KR102479017B1 (ko) 2022-04-06 2022-12-19 영창케미칼 주식회사 고평탄화 성능을 지닌 스핀 온 카본 하드마스크 조성물 및 이를 이용한 패턴화 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090176165A1 (en) * 2007-12-24 2009-07-09 Cheon Hwan Sung Polymer composition, hardmask composition having antireflective properties, and associated methods
US20120168894A1 (en) * 2010-12-30 2012-07-05 Min-Soo Kim Hard mask composition, method of forming a pattern, and semiconductor integrated circuit device including the pattern
US20160355699A1 (en) * 2015-06-02 2016-12-08 Samsung Sdi Co., Ltd. Organic layer composition and method of forming patterns

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5118191B2 (ja) * 2007-04-02 2013-01-16 チェイル インダストリーズ インコーポレイテッド 反射防止性を有するハードマスク組成物及びこれを利用した材料のパターン形成方法
KR100908601B1 (ko) * 2007-06-05 2009-07-21 제일모직주식회사 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법
KR20160087101A (ko) * 2015-01-13 2016-07-21 최상준 새로운 반사방지용 하드마스크 조성물
US20170137663A9 (en) * 2015-03-03 2017-05-18 Jsr Corporation Composition for resist underlayer film formation, resist underlayer film, and production method of patterned substrate
JP6394481B2 (ja) * 2015-04-28 2018-09-26 信越化学工業株式会社 レジスト組成物及びパターン形成方法
KR101852460B1 (ko) * 2015-12-16 2018-04-26 삼성에스디아이 주식회사 중합체, 유기막 조성물, 및 패턴형성방법
JP6589795B2 (ja) * 2016-09-27 2019-10-16 信越化学工業株式会社 スルホニウム塩、レジスト組成物及びパターン形成方法
KR101777687B1 (ko) * 2016-10-13 2017-09-12 영창케미칼 주식회사 고내에치성 스핀 온 카본 하드마스크 조성물 및 이를 이용한 패턴화 방법
KR101910450B1 (ko) * 2017-03-21 2019-01-04 동우 화인켐 주식회사 하드마스크용 조성물
US11650503B2 (en) * 2018-08-02 2023-05-16 Tokyo Ohka Kogyo Co., Ltd. Hard mask-forming composition and method for manufacturing electronic component
CN109188866A (zh) * 2018-08-16 2019-01-11 韩国高智株式会社 一种用于抗反射有机硬掩模的组合物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090176165A1 (en) * 2007-12-24 2009-07-09 Cheon Hwan Sung Polymer composition, hardmask composition having antireflective properties, and associated methods
US20120168894A1 (en) * 2010-12-30 2012-07-05 Min-Soo Kim Hard mask composition, method of forming a pattern, and semiconductor integrated circuit device including the pattern
US20160355699A1 (en) * 2015-06-02 2016-12-08 Samsung Sdi Co., Ltd. Organic layer composition and method of forming patterns

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020209527A1 *

Also Published As

Publication number Publication date
EP3955060A1 (fr) 2022-02-16
US20220179318A1 (en) 2022-06-09
CN113661445A (zh) 2021-11-16
KR20200119053A (ko) 2020-10-19
WO2020209527A1 (fr) 2020-10-15
JP7267451B2 (ja) 2023-05-01
KR102240213B1 (ko) 2021-04-14
JP2022525533A (ja) 2022-05-17
TW202037690A (zh) 2020-10-16
TWI749496B (zh) 2021-12-11

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