EP3930012A4 - Lawinenphotodiodensensor und abstandsmessvorrichtung - Google Patents
Lawinenphotodiodensensor und abstandsmessvorrichtung Download PDFInfo
- Publication number
- EP3930012A4 EP3930012A4 EP20759776.6A EP20759776A EP3930012A4 EP 3930012 A4 EP3930012 A4 EP 3930012A4 EP 20759776 A EP20759776 A EP 20759776A EP 3930012 A4 EP3930012 A4 EP 3930012A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- avalanche
- measurement device
- distance measurement
- photodiode sensor
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005259 measurement Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/42—Simultaneous measurement of distance and other co-ordinates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Computer Networks & Wireless Communication (AREA)
- Light Receiving Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP23183721.2A EP4242692A3 (de) | 2019-02-21 | 2020-02-06 | Lawinenphotodiodensensor und abstandsmessvorrichtung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019029912 | 2019-02-21 | ||
PCT/JP2020/004602 WO2020170841A1 (ja) | 2019-02-21 | 2020-02-06 | アバランシェフォトダイオードセンサ及び測距装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP23183721.2A Division EP4242692A3 (de) | 2019-02-21 | 2020-02-06 | Lawinenphotodiodensensor und abstandsmessvorrichtung |
Publications (3)
Publication Number | Publication Date |
---|---|
EP3930012A1 EP3930012A1 (de) | 2021-12-29 |
EP3930012A4 true EP3930012A4 (de) | 2022-04-20 |
EP3930012B1 EP3930012B1 (de) | 2023-07-12 |
Family
ID=72143812
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20759776.6A Active EP3930012B1 (de) | 2019-02-21 | 2020-02-06 | Lawinenphotodiodensensor und abstandsmessvorrichtung |
EP23183721.2A Pending EP4242692A3 (de) | 2019-02-21 | 2020-02-06 | Lawinenphotodiodensensor und abstandsmessvorrichtung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP23183721.2A Pending EP4242692A3 (de) | 2019-02-21 | 2020-02-06 | Lawinenphotodiodensensor und abstandsmessvorrichtung |
Country Status (8)
Country | Link |
---|---|
US (1) | US20220140156A1 (de) |
EP (2) | EP3930012B1 (de) |
JP (1) | JP7520805B2 (de) |
KR (1) | KR20210129638A (de) |
CN (1) | CN113287204A (de) |
DE (1) | DE112020000903T5 (de) |
TW (1) | TWI840501B (de) |
WO (1) | WO2020170841A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020085666A (ja) * | 2018-11-26 | 2020-06-04 | ソニーセミコンダクタソリューションズ株式会社 | 生体由来物質検出用チップ、生体由来物質検出装置及び生体由来物質検出システム |
US11335718B2 (en) * | 2020-07-16 | 2022-05-17 | Omnivision Technologies, Inc. | Cell deep trench isolation structure for near infrared improvement |
JP2022039524A (ja) * | 2020-08-28 | 2022-03-10 | 株式会社東芝 | 半導体装置 |
CN114551627A (zh) * | 2020-11-11 | 2022-05-27 | 光宝光电(常州)有限公司 | 光感测模块 |
JP2022083194A (ja) * | 2020-11-24 | 2022-06-03 | ソニーセミコンダクタソリューションズ株式会社 | センサデバイス |
TWI749951B (zh) * | 2020-12-17 | 2021-12-11 | 華碩電腦股份有限公司 | 超音波傳感模組 |
KR20220108918A (ko) * | 2021-01-28 | 2022-08-04 | 삼성전자주식회사 | 이미지 센서 |
JP2022175591A (ja) * | 2021-05-14 | 2022-11-25 | ソニーセミコンダクタソリューションズ株式会社 | 測距装置及び測距システム |
DE112022003108T5 (de) * | 2021-06-17 | 2024-04-11 | Sony Semiconductor Solutions Corporation | Abstandsmessvorrichtung und abstandsmessverfahren |
US20230030282A1 (en) * | 2021-07-30 | 2023-02-02 | Sony Semiconductor Solutions Corporation | Backside illuminated single photon avalanche diode |
US20230065063A1 (en) * | 2021-08-24 | 2023-03-02 | Globalfoundries Singapore Pte. Ltd. | Single-photon avalanche diodes with deep trench isolation |
WO2023132003A1 (ja) * | 2022-01-05 | 2023-07-13 | キヤノン株式会社 | 光電変換装置 |
US11967664B2 (en) * | 2022-04-20 | 2024-04-23 | Globalfoundries Singapore Pte. Ltd. | Photodiodes with serpentine shaped electrical junction |
WO2024117027A1 (ja) * | 2022-11-30 | 2024-06-06 | キヤノン株式会社 | 光電変換装置、機器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190006399A1 (en) * | 2016-10-18 | 2019-01-03 | Sony Semiconductor Solutions Corporation | Photodetector |
US20190027518A1 (en) * | 2016-01-21 | 2019-01-24 | Sony Corporation | Image pickup device and electronic apparatus |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153311A (ja) * | 2006-12-14 | 2008-07-03 | Sumitomo Electric Ind Ltd | 半導体受光素子、視界支援装置および生体医療装置 |
JP5185208B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオード及びフォトダイオードアレイ |
US10957804B2 (en) * | 2009-08-18 | 2021-03-23 | The United States Of America As Represented By The Secretary Of The Army | Photodetector using resonance and related method |
US9986186B2 (en) * | 2014-12-18 | 2018-05-29 | Sony Corporation | Solid-state image sensor, imaging device, and electronic device |
WO2017038542A1 (ja) | 2015-09-03 | 2017-03-09 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、および電子装置 |
JP2017108062A (ja) | 2015-12-11 | 2017-06-15 | ソニー株式会社 | 固体撮像素子、撮像装置、および、固体撮像素子の製造方法 |
EP3506355B1 (de) | 2016-08-29 | 2023-06-14 | Hamamatsu Photonics K.K. | Abstandssensor und abstandsbildsensor |
JP6818875B2 (ja) | 2016-09-23 | 2021-01-20 | アップル インコーポレイテッドApple Inc. | 積層背面照射型spadアレイ |
CN108475689B (zh) * | 2016-10-18 | 2023-05-12 | 索尼半导体解决方案公司 | 传感器 |
JP7055544B2 (ja) | 2016-11-29 | 2022-04-18 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
KR102625899B1 (ko) * | 2017-03-22 | 2024-01-18 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 장치 및 신호 처리 장치 |
JP7114244B2 (ja) * | 2017-11-30 | 2022-08-08 | キヤノン株式会社 | 光検出装置、光検出システム、及び移動体 |
KR102493823B1 (ko) * | 2018-03-08 | 2023-02-01 | 삼성전자주식회사 | 이미지 센서, 이를 포함하는 이미지 검출 시스템, 및 이미지 센서의 동작 방법 |
US10638063B2 (en) * | 2018-07-11 | 2020-04-28 | Semiconductor Components Industries, Llc | Methods and apparatus for increased dynamic range of an image sensor |
CN109300992B (zh) * | 2018-08-16 | 2020-01-21 | 杭州电子科技大学 | 一种高探测效率的单光子雪崩二极管及其制作方法 |
-
2020
- 2020-02-06 JP JP2021501849A patent/JP7520805B2/ja active Active
- 2020-02-06 TW TW109103701A patent/TWI840501B/zh active
- 2020-02-06 KR KR1020217023431A patent/KR20210129638A/ko not_active Application Discontinuation
- 2020-02-06 US US17/430,834 patent/US20220140156A1/en active Pending
- 2020-02-06 CN CN202080008797.3A patent/CN113287204A/zh active Pending
- 2020-02-06 EP EP20759776.6A patent/EP3930012B1/de active Active
- 2020-02-06 WO PCT/JP2020/004602 patent/WO2020170841A1/ja unknown
- 2020-02-06 EP EP23183721.2A patent/EP4242692A3/de active Pending
- 2020-02-06 DE DE112020000903.3T patent/DE112020000903T5/de active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190027518A1 (en) * | 2016-01-21 | 2019-01-24 | Sony Corporation | Image pickup device and electronic apparatus |
US20190006399A1 (en) * | 2016-10-18 | 2019-01-03 | Sony Semiconductor Solutions Corporation | Photodetector |
Also Published As
Publication number | Publication date |
---|---|
TW202044570A (zh) | 2020-12-01 |
TWI840501B (zh) | 2024-05-01 |
EP3930012A1 (de) | 2021-12-29 |
EP4242692A2 (de) | 2023-09-13 |
US20220140156A1 (en) | 2022-05-05 |
KR20210129638A (ko) | 2021-10-28 |
WO2020170841A1 (ja) | 2020-08-27 |
JP7520805B2 (ja) | 2024-07-23 |
EP3930012B1 (de) | 2023-07-12 |
JPWO2020170841A1 (ja) | 2021-12-23 |
CN113287204A (zh) | 2021-08-20 |
EP4242692A3 (de) | 2024-02-28 |
DE112020000903T5 (de) | 2021-11-11 |
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