EP3883940B1 - Verbesserte perowskitmaterialien für fotovoltaische vorrichtungen - Google Patents

Verbesserte perowskitmaterialien für fotovoltaische vorrichtungen

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Publication number
EP3883940B1
EP3883940B1 EP19886969.5A EP19886969A EP3883940B1 EP 3883940 B1 EP3883940 B1 EP 3883940B1 EP 19886969 A EP19886969 A EP 19886969A EP 3883940 B1 EP3883940 B1 EP 3883940B1
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Prior art keywords
lead
perovskite material
perovskite
iodide
salt
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French (fr)
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EP3883940A1 (de
EP3883940A4 (de
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Michael D. Irwin
Michael Holland
Nicholas Anderson
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CubicPV Inc
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CubicPV Inc
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    • C07F7/24—Lead compounds
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    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/01—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms
    • C07C211/02—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C211/09—Diamines
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    • C07C211/14—Amines containing amino groups bound to at least two aminoalkyl groups, e.g. diethylenetriamines
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    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/12—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to hydrogen atoms
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Electroluminescent Light Sources (AREA)

Claims (14)

  1. Perowskitmaterial, umfassend:
    ein Perowskitkristallgitter, das eine Formel von CxMyXz aufweist; und
    1,4-Diammoniumbutankationen, die innerhalb des Perowskitkristallgitters angeordnet sind; wobei:
    x, y und z reelle Zahlen zwischen 1 und 20 sind;
    C Formamidinium umfasst, wobei jedes 1,4-Diammoniumbutankation zwei Formamidiniumionen innerhalb des Perowskitkristallgitters substituiert;
    M ein oder mehrere Metalle umfasst, die jeweils aus der Gruppe ausgewählt sind, die aus Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg und Zr und Kombinationen davon besteht; und
    X ein oder mehrere Anionen umfasst, die jeweils aus der Gruppe ausgewählt sind, die aus Halogeniden, Pseudohalogeniden, Chalkogeniden und Kombinationen davon besteht.
  2. Perowskitmaterial, umfassend:
    ein Formamidinium-Blei-Iodid-Perowskitmaterial; und
    1,4-Diammoniumbutankationen, die innerhalb des Formamidinium-Blei-Iodid-Perowskitmaterials dispergiert sind, wobei jedes 1,4-Diammoniumbutankation zwei Formamidiniumionen innerhalb des Kristallgitters des Formamidinium-Blei-Iodid-Perowskitmaterials substituiert.
  3. Perowskitmaterial nach Anspruch 1 oder 2, wobei die 1,4-Diammoniumbutankationen eine Konzentration:
    i) zwischen 1 Mol-% und 20 Mol-% in dem Perowskitmaterial;
    ii) zwischen 1 Mol-% und 5 Mol-% in dem Perowskitmaterial;
    iii) ungefähr 5 Mol-% in dem Perowskitmaterial aufweisen.
  4. Perowskitmaterial nach Anspruch 1, wobei C Formamidinium umfasst, M Blei umfasst und X Iodid umfasst.
  5. Perowskitmaterial nach Anspruch 4, wobei das Perowskitmaterialkristallgitter eine kubische Struktur aufweist, oder Perowskitmaterial nach Anspruch 2, wobei das Formamidinium-Blei-Iodid-Perovskitmaterial eine kubische Kristallstruktur aufweist.
  6. Verfahren zum Ablagern des Perowskitmaterials nach Anspruch 1, umfassend:
    Ablagern eines Bleisalz-Vorläufers auf einem Substrat, um einen Bleisalzdünnfilm zu bilden, wobei der Bleisalz-Vorläufer ein Bleisalz und ein 1,4-Diammoniumbutansalz umfasst;
    Ablagern eines zweiten Salz-Vorläufers auf dem Bleisalzdünnfilm, um einen Perowskit-Vorläuferdünnfilm zu bilden; und
    Glühen des Substrats und des Perowskit-Vorläuferdünnfilms, um ein Perowskitmaterial zu bilden.
  7. Verfahren zum Ablagern des Perowskitmaterials nach Anspruch 1, umfassend:
    Ablagern eines Bleisalz-Vorläufers auf einem Substrat, um einen Bleisalzdünnfilm zu bilden;
    Ablagern eines 1,4-Diammoniumbutansalz-Vorläufers auf dem Bleisalzdünnfilm;
    Ablagern eines dritten Salz-Vorläufers auf dem Bleisalzdünnfilm, um einen Perowskit-Vorläuferdünnfilm zu bilden; und
    Glühen des Substrats und des Perowskit-Vorläuferdünnfilms, um ein Perowskitmaterial zu bilden.
  8. Verfahren nach Anspruch 6, wobei der Bleisalz-Vorläufer eine 1,4-Diammoniumbutankonzentration:
    i) zwischen 1 Mol-% und 20 Mol-%;
    ii) zwischen 1 Mol-% und 5 Mol-%; oder
    iii) von ungefähr 5 Mol-% aufweist.
  9. Verfahren nach Anspruch 6, wobei das Bleisalz aus der Gruppe ausgewählt ist, die aus Blei(II)-iodid, Blei(II)-thiocyanat, Blei(II)-chlorid, Blei(II)-bromid und Kombinationen davon besteht; und/oder
    wobei der zweite Salz-Vorläufer ein Salz umfasst, das aus der Gruppe ausgewählt ist, die aus Formamidiniumiodid, Formamidiniumthiocyanat, Guanidiniumthiocyanat und Kombinationen davon besteht.
  10. Verfahren nach Anspruch 6, wobei das Bleisalz Blei(II)-iodid umfasst und/oder wobei der zweite Salz-Vorläufer Formamidiniumiodid umfasst.
  11. Verfahren nach Anspruch 6, wobei der Bleisalz-Vorläufer einen oder mehrere Zusatzstoffe enthält, die aus der Gruppe ausgewählt sind, die aus einer Aminosäure, 5-Aminovaleriansäurehydroiodid, 1,8-Diiodooctan, 1,8-Dithiooctan, Formamidiniumhalogenid, Essigsäure, Trifluoressigsäure, einem Methylammoniumhalogenid, Wasser und Kombinationen davon besteht.
  12. Verfahren nach Anspruch 6, wobei der Bleisalz-Vorläufer ein Molverhältnis von PbI2 zu PbCl2 von 90:10, aufgelöst in wasserfreiem Dimethylformamid, umfasst.
  13. Verfahren nach Anspruch 6, wobei:
    i) das Glühen bei einer Temperatur auftritt, die größer als oder gleich 50 °C und kleiner als oder gleich 300 °C ist;
    ii) das Glühen bei einer absoluten Feuchtigkeit auftritt, die größer als oder gleich 0 g H2O/m3 Luft und kleiner als oder gleich 20 g H2O/m3 Luft ist;
    iii) wobei das Glühen bei einer absoluten Feuchtigkeit auftritt, die zwischen ungefähr 4 und 7 g H2O/m3 Luft beträgt.
  14. Verfahren nach Anspruch 7, wobei:
    der Bleisalz-Vorläufer ein Molverhältnis von PbI2 zu PbCl2 von 90:10, aufgelöst in wasserfreiem Dimethylformamid, umfasst;
    der Bleisalz-Vorläufer so viel wie 10 Mol-% Cäsium umfasst; und
    das Glühen bei einer Temperatur auftritt, die größer als oder gleich 50 °C und kleiner als oder gleich 300 °C ist.
EP19886969.5A 2018-11-21 2019-11-08 Verbesserte perowskitmaterialien für fotovoltaische vorrichtungen Active EP3883940B1 (de)

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US201862770313P 2018-11-21 2018-11-21
US16/665,831 US11631582B2 (en) 2018-11-21 2019-10-28 Enhanced perovskite materials for photovoltaic devices
PCT/US2019/060410 WO2020106469A1 (en) 2018-11-21 2019-11-08 Enhanced perovskite materials for photovoltaic devices

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CN111834533B (zh) * 2020-07-21 2021-09-24 西北工业大学 含芘全氟化合物钝化钙钛矿薄膜的太阳能电池制备方法
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