MX2021005893A - Materiales de perovskita mejorados para dispositivos fotovoltaicos. - Google Patents

Materiales de perovskita mejorados para dispositivos fotovoltaicos.

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Publication number
MX2021005893A
MX2021005893A MX2021005893A MX2021005893A MX2021005893A MX 2021005893 A MX2021005893 A MX 2021005893A MX 2021005893 A MX2021005893 A MX 2021005893A MX 2021005893 A MX2021005893 A MX 2021005893A MX 2021005893 A MX2021005893 A MX 2021005893A
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Mexico
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group
photovoltaic devices
metals
perovskite materials
combinations
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MX2021005893A
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English (en)
Inventor
Michael D Irwin
Michael Holland
Nicholas Anderson
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Hunt Perovskite Tech L L C
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Application filed by Hunt Perovskite Tech L L C filed Critical Hunt Perovskite Tech L L C
Publication of MX2021005893A publication Critical patent/MX2021005893A/es

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/24—Lead compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
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    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Se describe un material de perovskita que tiene una red cristalina de perovskita que tiene una fórmula de CxMyXz, donde x, y, y z, son números reales, y los cationes de 1,4-diamonio se colocan dentro o en una superficie de la red cristalina de perovskita. C comprende uno o más cationes seleccionados del grupo que consiste metales del Grupo 1, metales del Grupo 2, amonio, formamidinio, guanidinio, y eteno tetramina. M comprende uno o más metales cada uno seleccionado del grupo que consiste de Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, y Zr y combinaciones de los mismos. X comprende uno o más aniones cada uno seleccionado del grupo que consiste de haluros, sulfuros, selenuros, y combinaciones de los mismos.
MX2021005893A 2018-11-21 2019-11-08 Materiales de perovskita mejorados para dispositivos fotovoltaicos. MX2021005893A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862770313P 2018-11-21 2018-11-21
US16/665,831 US11631582B2 (en) 2018-11-21 2019-10-28 Enhanced perovskite materials for photovoltaic devices
PCT/US2019/060410 WO2020106469A1 (en) 2018-11-21 2019-11-08 Enhanced perovskite materials for photovoltaic devices

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MX2021005893A true MX2021005893A (es) 2021-08-11

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US (4) US11631582B2 (es)
EP (2) EP3883939A4 (es)
JP (2) JP2022508171A (es)
KR (2) KR20210080572A (es)
CN (2) CN113272311A (es)
AU (2) AU2019384692A1 (es)
CA (2) CA3120251A1 (es)
MX (2) MX2021005894A (es)
WO (2) WO2020106468A1 (es)

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KR101919100B1 (ko) * 2018-10-17 2018-11-19 한국과학기술정보연구원 Lhp 합성 시뮬레이션 방법 및 장치
US11631582B2 (en) * 2018-11-21 2023-04-18 Cubicpv Inc. Enhanced perovskite materials for photovoltaic devices
GB201908334D0 (en) * 2019-06-11 2019-07-24 Univ Oxford Innovation Ltd Optoelectronic device
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KR102568090B1 (ko) * 2020-11-27 2023-08-17 가천대학교 산학협력단 넓은 밴드갭을 가진 페로브스카이트 구조 나노물질을 이용한 uvc 센서 및 이의 제조방법
CN112786788B (zh) * 2020-12-24 2022-12-02 隆基绿能科技股份有限公司 一种钙钛矿电池
WO2022250795A2 (en) * 2021-04-09 2022-12-01 Brown University Perovskite solar cells with self-assembled monolayers
CN113809241B (zh) * 2021-09-17 2024-06-04 中山大学·深圳 一种基于草酸钝化的高稳定钙钛矿太阳能电池及其制备方法
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CA3239181A1 (en) * 2021-11-28 2023-06-01 Michael D. Irwin Methods for forming perovskite material layers
CN114085168B (zh) * 2021-11-30 2023-07-07 南京理工大学 高光产额的镉掺杂二苯胍锰溴闪烁体及其合成方法
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CN115843205B (zh) * 2023-02-20 2023-05-23 中国华能集团清洁能源技术研究院有限公司 一种钙钛矿膜层的制备方法及钙钛矿太阳能电池
CN116507185B (zh) * 2023-06-30 2023-10-20 长江三峡集团实业发展(北京)有限公司 一种甲脒钙钛矿太阳能电池及其制备方法

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CN107887510A (zh) 2017-10-25 2018-04-06 深圳大学 一种二维层状钙钛矿薄膜、太阳能电池及其制备方法
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AU2019384692A1 (en) 2021-06-03
AU2019383351A8 (en) 2021-06-10
EP3883940A4 (en) 2022-09-07
AU2019384692A8 (en) 2021-06-10
US20200161127A1 (en) 2020-05-21
MX2021005894A (es) 2021-08-11
EP3883940A1 (en) 2021-09-29
CA3120258A1 (en) 2020-05-28
CN113272311A (zh) 2021-08-17
US20230162974A1 (en) 2023-05-25
US20240128076A1 (en) 2024-04-18
KR20210080572A (ko) 2021-06-30
EP3883939A4 (en) 2022-09-21
AU2019383351A1 (en) 2021-06-03
WO2020106469A1 (en) 2020-05-28
JP2022507895A (ja) 2022-01-18
WO2020106468A1 (en) 2020-05-28
US20200157125A1 (en) 2020-05-21
EP3883939A1 (en) 2021-09-29
CN113272312A (zh) 2021-08-17
CA3120251A1 (en) 2020-05-28
US11631582B2 (en) 2023-04-18
JP2022508171A (ja) 2022-01-19
US11901177B2 (en) 2024-02-13
KR20210080570A (ko) 2021-06-30

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