EP3843611A1 - Émetteur large bande pour rayonnement électromagnétique - Google Patents

Émetteur large bande pour rayonnement électromagnétique

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Publication number
EP3843611A1
EP3843611A1 EP19769716.2A EP19769716A EP3843611A1 EP 3843611 A1 EP3843611 A1 EP 3843611A1 EP 19769716 A EP19769716 A EP 19769716A EP 3843611 A1 EP3843611 A1 EP 3843611A1
Authority
EP
European Patent Office
Prior art keywords
emitter
radiation
tertiary
primary
emit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19769716.2A
Other languages
German (de)
English (en)
Inventor
Holger Zeng
Peter Rotsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osa Opto Light GmbH
Original Assignee
Osa Opto Light GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osa Opto Light GmbH filed Critical Osa Opto Light GmbH
Publication of EP3843611A1 publication Critical patent/EP3843611A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/06—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor with illuminating arrangements
    • A61B1/0661—Endoscope light sources
    • A61B1/0684—Endoscope light sources using light emitting diodes [LED]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • the invention relates to an emitter for electromagnetic radiation, the use of such an emitter as a radiation source or lighting in a spectrometer, a hyperspectral camera or an endoscope, and a method for generating electromagnetic radiation.
  • semiconductor luminescent diodes are known as emitters for electromagnetic radiation. These are diodes that emit optical radiation directly from the semiconductor material. Diodes in which a primary radiation from the semiconductor material is converted into radiation of longer wavelength by a fluorescent or phosphorescent material, so-called phosphors, are therefore referred to as conversion light-emitting diodes. Usually and in the following, both variants are referred to as LEDs. The common and well-known white light emitting LEDs are based on this solution.
  • Directly emitting diodes typically have an emission spectrum with a half-width of less than 50 nm. This full width at half maximum is a measure of the bandwidth of the emission.
  • Inorganic phosphors typically have half-widths of the emission spectrum in the range from 50 nm to 100 nm. The emission of such phosphors and LEDs with such phosphors is consequently limited.
  • optical radiation sources with a high bandwidth of the spectrum, which is usually well above 100 nm.
  • These can be white light sources of particularly high quality (high Ra or CRI value), but also radiation sources that require radiation in the optical range from ultraviolet to infrared.
  • Typical examples are sunlight simulators, as in IEC 60904-2: Photovoltaic devices - Part 2: Requirements for reference solar devices. Described in 2007 or radiation sources in the range from 500 nm to 1000 nm, also known as VIS-NIR range, for spectroscopic applications. Radiation sources with a high proportion of thermally determined emission spectrum, for example Halogen or incandescent lamps are sometimes the means of choice for these applications. This is especially true for spectrometers, hyperspectral cameras and endoscopes, especially when the NIR range of radiation is required.
  • the arrangement of 22 different LED types can generate the sunlight spectrum in the range from 350 nm to 1100 nm.
  • This application is highly efficient and flexible.
  • the disadvantage is the high technical complexity both in the control of the LEDs and in the arrangement of the LEDs.
  • Another disadvantage is the inhomogeneity of the spatial dependence of the spectrum in the illuminated area, which is difficult to overcome.
  • the publication W02007 / 070821 A2 discloses an LED spotlight in which the light from an LED chip with an additional conversion layer is combined with the light from other LED chips, e.g. a blue LED with yellow conversion phosphor and additionally cherry red, i.e. with 640 nm dominant wavelength and turquoise green, i.e. with 500 nm dominant wavelength, LEDs. It is inherent to the functioning of this LED that the phosphor is not stimulated by the additional LEDs to a secondary emission.
  • the invention has for its object to provide a broadband emitter of high efficiency, preferably based on a single stimulating LED chip.
  • An emission range of 500 nm to 1100 nm should preferably be able to be represented with a sufficiently high efficiency.
  • the emitter for electromagnetic radiation according to the invention comprises:
  • a primary emitter to emit primary radiation
  • a secondary emitter to emit secondary radiation in response to excitation with the primary radiation
  • a tertiary emitter for emitting tertiary radiation in response to excitation with the secondary radiation
  • the primary, secondary and / or tertiary radiation have at least partially different wavelengths in order to create a broadband spectrum.
  • the radiation source according to the invention for a spectrometer comprises an emitter as described above, preferably
  • the primary emitter is designed to emit the primary radiation in the blue spectral range with a peak wavelength of 450 nm +/- 30 nm;
  • the secondary emitter is designed to emit the secondary radiation with a wavelength in the range from 500 nm to 800 nm;
  • the tertiary emitter comprises a dye or a dye mixture of the "Egyptian Blue” class and is designed to emit the tertiary radiation with a wavelength in the range from 800 nm to 1000 nm.
  • the radiation source according to the invention for a hyperspectral camera comprises an emitter as described above, preferably
  • the primary emitter is designed to block the primary radiation in the blue spectral range Emit peak wavelength of 450 nm +/- 30 nm;
  • the secondary emitter is designed to emit the secondary radiation with a wavelength in the range from 500 nm to 700 nm;
  • the further secondary emitter is designed to emit the further secondary radiation with a wavelength in the range from 700 nm to 850 nm;
  • the tertiary emitter comprises a dye or a dye mixture of the "Egyptian Blue” class and is designed to emit the tertiary radiation with a wavelength in the range from 800 nm to 1000 nm;
  • the supplementary emitter is designed to emit the supplementary radiation with a wavelength in the range from 650 nm to 700 nm.
  • the radiation source for an endoscope according to the invention comprises an emitter as described above, preferably
  • the primary emitter is designed to block the primary radiation in the blue spectral range
  • the secondary emitter is applied directly to the primary emitter
  • the further secondary emitter and the tertiary emitter are attached to and / or in a cover of the primary emitter, the cover preferably comprising an optically transparent material.
  • the method according to the invention for generating electromagnetic radiation comprises the steps:
  • Emitting primary radiation by means of a primary emitter Emitting primary radiation by means of a primary emitter
  • the primary, secondary and / or tertiary radiation have at least partially different wavelengths in order to create a broadband spectrum.
  • a compact broadband source can be created by a secondary emitter that emits secondary radiation in response to excitation with the primary radiation and a tertiary emitter that emits tertiary radiation in response to excitation with the secondary radiation.
  • a broadband source can be created that is simple is to be controlled since it preferably has only one active element, that is to say a component to be supplied with current. This component is preferably the primary emitter.
  • the source can be operated very energy-efficiently. In particular, this can create a source with improved durability, since passive components are therefore fail-safe and therefore only the primary emitter can fail. Furthermore, cooling of such a source is associated with less effort since only one active component is present.
  • the emitter has a further secondary emitter, which is designed to emit a further secondary radiation in response to an excitation with the primary radiation.
  • Another secondary radiation is preferably generated or emitted by a further phosphor or a further phosphor mixture.
  • the further secondary emitter can preferably be introduced together with the secondary emitter and / or tertiary emitter, for example by adding a further phosphor. Homogeneity in the spectrum can be improved.
  • the primary emitter comprises an LED chip, the secondary emitter a secondary phosphor or a secondary phosphor mixture, the further secondary emitter a further secondary phosphor or a further secondary phosphor mixture and / or the tertiary emitter a tertiary phosphor or a tertiary phosphor mixture.
  • the tertiary phosphor and / or the tertiary phosphor mixture preferably comprises a phosphor from the group of the compounds cuprorivaite and similar (Ca, Sr, Ba) CuSi 4 O 10 and / or Han blue. This class of phosphors, which has received little attention to date, is described in the literature.
  • the cuprorivait cannot be excited with the usual blue light from LED chips for conversion light LEDs. This phosphor therefore does not seem to be suitable for broadband emitters.
  • Another dye, the Han blue has similar excitation properties as a phosphor, the emission being shifted to longer wavelengths.
  • the emitter With an LED as the primary emitter, the emitter can be made robust and energy efficient. Secondary and tertiary emitters in the form of phosphors or phosphor mixtures can further improve the structural compactness of the source.
  • the source can be controlled and displayed in a technically simple manner. The spectrum obtained can be adjusted by appropriately adding the phosphors during production and therefore remains essentially constant over the operating period. Improper operation of the source can be counteracted.
  • the source is easy to use and can be used immediately without the user having to set it beforehand.
  • the phosphors are applied together with a matrix in a homogeneous mixture.
  • the secondary phosphor is applied in a first layer and the further secondary phosphor and the tertiary phosphor are applied in a second layer, with a spatial separation preferably being arranged between these layers.
  • a technically simple source can be provided.
  • the matrix with the phosphors can be manufactured or bought in externally.
  • the quality of the matrix can be checked before the source is completed.
  • a constant quality in production can be guaranteed.
  • the primary emitter is designed to emit the primary radiation in the blue spectral range.
  • the secondary emitter is designed to emit the secondary radiation in the green-red spectral range.
  • the tertiary emitter is designed to emit the tertiary radiation in the infrared spectral range, preferably with a wavelength of 800 nm to 1000 nm.
  • the primary emitter is designed to emit the primary radiation in the blue spectral range.
  • the secondary emitter is designed to emit the secondary radiation in the yellow-red spectral range and the further secondary emitter is designed to emit the further secondary radiation in the infrared spectral range, preferably with a wavelength of 600 nm to 800 nm.
  • the tertiary emitter is designed to emit the tertiary radiation in the infrared spectral range, preferably with a wavelength of 800 nm to 1000 nm.
  • the primary emitter is designed to emit the primary radiation in the ultraviolet spectral range.
  • the secondary emitter is designed to emit the secondary radiation in the green spectral range.
  • the further secondary emitter is designed to emit the further secondary radiation in the red spectral range.
  • the tertiary emitter is designed to emit the tertiary radiation in the infrared spectral range, preferably with a wavelength of 800 nm to 1000 nm.
  • the spectrum of the source can be expanded to include a high-energy UV range.
  • the secondary phosphor or the secondary phosphor mixture and the tertiary phosphor or the tertiary phosphor mixture are arranged in a common matrix. Additionally or alternatively, the secondary phosphor or the secondary phosphor mixture and the tertiary phosphor or the tertiary phosphor mixture are arranged in layers. In addition or alternatively, the tertiary phosphor or the tertiary phosphor mixture is applied by means of a further separate matrix, preferably with remote phosphor. With this arrangement, an efficiency of the excitation cascade described above can be further improved.
  • the matrix comprises an organic material, preferably silicone. Additionally or alternatively, the matrix comprises an inorganic material, preferably kaolin. These matrix configurations enable a matrix that is tailored to the intended use to be used, and the source can be designed specifically and in an optimized manner.
  • the emitter has a supplementary emitter, preferably comprising a supplemental phosphor or a supplemental phosphor mixture to emit supplemental radiation in response to the primary, secondary and / or tertiary radiation.
  • a supplementary emitter preferably comprising a supplemental phosphor or a supplemental phosphor mixture to emit supplemental radiation in response to the primary, secondary and / or tertiary radiation.
  • the method has the step: emitting a further secondary radiation by means of a further secondary emitter in response to an excitation with the primary radiation.
  • This can further increase the homogeneity and broadband of the spectrum in an efficient manner, since an emission yield for secondary radiation can be efficient.
  • a broadband spectrum can be created without any further active sources, i.e. those powered by electricity.
  • Primary radiation is preferably understood to mean the emission of a semiconductor chip.
  • Secondary radiation is preferably the emission of a dye or phosphor that has been excited by the primary radiation. In general, the secondary radiation has a longer wavelength than the primary radiation.
  • Tertiary radiation is to be understood in particular as the emission of a dye or phosphor which cannot be induced by the primary radiation of the semiconductor, but rather by the secondary radiation from another phosphor. Here, too, the tertiary radiation has a longer wavelength than the secondary one.
  • Dye, phosphor and dye mixture or phosphor mixture are used synonymously in the present case.
  • broadband is to be regarded in particular as comprising several 100 nm.
  • Dyes or phosphors of the "Egyptian blue” class are to be understood in particular as Han blue and the Egyptian blue pigment Cuprorivait (CaCuSi 4 O 10 ), just as phosphors have comparable absorption and emission properties.
  • peak wavelength is to be understood as the wavelength that is emitted with the highest intensity.
  • Narrow-band emitters usually have a peak wavelength, with neighboring wavelength regions losing emission intensity with increasing distance from the peak wavelength.
  • the spectrum can be described and / or approximated by a Gaussian distribution.
  • the Ra or CRI value is to be understood as a color rendering index and provides information about how true to life colors of an object illuminated by an artificial light source are rendered. It is therefore a quality feature of artificial light versus natural light.
  • a light source whose light contains all spectral colors in the same ratio as in sunlight, makes the colors of the illuminated objects look natural - the color rendering is optimal.
  • Remote phosphor is to be understood in particular as an arrangement of the phosphor separately from the radiation source and is often used with white LEDs.
  • Figure 1 is a schematic representation of an emitter in the form of an LED with a
  • Figure 2 is a schematic representation of an emitter in the form of an LED with a thin
  • Figure 3 is a schematic representation of an emitter in the form of an LED with a
  • Figure 4 shows a spectrum of a source according to a first embodiment
  • Figure 5 shows a spectrum of a source according to a second embodiment
  • FIG. 6 shows a spectrum of a source according to a third exemplary embodiment
  • Figure 7 is a schematic representation of a method according to the invention.
  • FIG. 1 shows a source or an emitter 10 in the form of an LED chip 12 which is introduced in a dye mixture 14, the dye mixture 14 being a secondary emitter A in Form of a secondary dye, a further secondary emitter B in the form of a further secondary dye and a tertiary emitter C in the form of a tertiary dye.
  • the LED chip 12 is arranged on a suitable circuit carrier and can be controlled by means of a bonding wire 16.
  • the dye mixture 14 is arranged within a reflector 18 in order to achieve a higher radiation efficiency.
  • a primary radiation is generated by the LED chip 12 and emitted into the environment, the LED chip 12 thus represents a primary emitter 11.
  • This primary radiation is then partially absorbed by a secondary emitter A in the form of a secondary dye and in secondary radiation with a other, preferably larger, wavelength changed.
  • Part of the secondary radiation can be absorbed by the tertiary dye and converted into tertiary radiation with a wavelength different from that of the secondary radiation.
  • the tertiary dye is a tertiary emitter C.
  • the tertiary radiation preferably has a longer wavelength than the primary radiation and the secondary radiation.
  • a further secondary dye can also be provided in the dye mixture 14, which partially absorbs the primary radiation and converts it into further secondary radiation with a different, preferably longer, wavelength than the primary radiation.
  • the further secondary dye represents a further secondary emitter B.
  • a supplementary dye can also be provided, which is preferably contained in the dye mixture 14 and which partially absorbs the primary, secondary and / or tertiary radiation and can convert it into supplementary radiation with a different wavelength than the wavelength of the absorbed radiation.
  • a dye mixture can create an emitter 10 with a broadband and essentially homogeneous spectrum, the emitter 10 preferably having only one active radiation source, preferably in the form of an LED chip 12. There is a cascade-like excitation in the emitter 10, from primary to secondary to tertiary radiation.
  • Such an emitter 10 can preferably be used in a spectrometer in order to provide a robust broadband light source.
  • FIG. 2 shows a source or an emitter 10 in the form of an LED chip 12, in which the secondary phosphor is introduced into a matrix 20, the matrix 20 being applied to the LED chip 12.
  • the LED chip 12 with the matrix 20 is introduced in a dye mixture 14, wherein the dye mixture 14 has the further secondary dye and the tertiary dye.
  • the LED chip 12 is arranged on a suitable circuit carrier and can be controlled by means of a bonding wire 16.
  • the dye mixture 14 is arranged within a reflector 18 in order to achieve a higher radiation efficiency.
  • the secondary phosphor is introduced into a matrix 20 and arranged directly on the LED chip 12.
  • the cascade-like excitation in the emitter 10 can be improved; in particular, the efficiency of the secondary dye can be increased, since this arrangement experiences a high radiation throughput by arranging it directly on the primary radiation source, that is to say the LED chip 12, and can therefore preferably be excited.
  • Such an emitter 10 can preferably be used in a hyperspectral camera in order to provide a robust broadband light source.
  • FIG. 3 shows a source or an emitter 10 in the form of an LED chip 12 in which the secondary phosphor is introduced into a matrix 20, the matrix 20 being applied to the LED chip 12.
  • the LED chip 12 with the matrix 20 is inserted in a reflector 18 and arranged on a suitable circuit carrier and can be controlled by means of a bonding wire 16.
  • the dye mixture 14 is arranged in a further matrix 24 within a reflector 18.
  • the LED chip 12, the matrix 20 and the further matrix 24 are arranged under a cover 26 in the form of a transparent carrier, for example made of glass.
  • a mechanically stable and resistant emitter 10 can be created.
  • a preferred direction of radiation can be defined, the emitters A, B, C being arranged in only one beam path in this direction. In this way it can be achieved that phosphors are only arranged where they are needed or where they can be used.
  • Such an emitter 10 can preferably be used in an endoscope in order to provide a robust, broadband light source provided with a housing for endoscopy.
  • FIG. 4 shows a spectrum 28 of a first exemplary embodiment.
  • the radiation intensity is plotted on the ordinate 30 and the wavelength on the abscissa 32, the abscissa 32 describing a range from 400 nm to 1100 nm from right to left in the graph of a spectrum 28 shown.
  • the emitter 10 can be constructed as shown in FIG. 1.
  • a blue-emitting chip with a peak wavelength of 450 nm +/- 30 nm, preferably 450 nm +/- 10 nm, in the form of an LED chip 12 is arranged on a suitable circuit carrier.
  • An orange-emitting secondary phosphor is contained in the phosphor mixture 14.
  • the secondary phosphors of this example contain europium-doped (Ca, Sr) AISiN 3 nitrides with the emission SA and the phosphor with the trade name TL-0156 from the manufacturer Tailorlux with the emission SB. Furthermore, a cuprorivait from the group of substances (Ca, Sr, Ba) CuSi 4 Oi 0 with the trade name "Egyptian Blue” is added to the phosphor mixture.
  • Part of the emission of the secondary phosphor A is converted by the tertiary phosphor, “Egyptian Blue” dyes, into radiation in the range from 800 nm to 1000 nm, that is to say in a spectral range SC.
  • This emitter 10 thus has a spectral emission in the range from 550 nm to 1000 nm.
  • This solution has a radiation output in the IR range that is many times higher than that of the known prior art.
  • FIG. 5 shows a spectrum 28 of a second exemplary embodiment.
  • the radiation intensity is plotted on the ordinate 30 and the wavelength on the abscissa 32, the abscissa 32 in the diagram of a spectrum 28 shown from right to left describing a range from 400 nm to 1100 nm.
  • the source can be constructed as shown in FIG. 2.
  • a blue-emitting chip with a peak wavelength of 450 nm +/- 30 nm, preferably 450 nm +/- 10 nm, in the form of an LED chip 12 is arranged on a suitable circuit carrier.
  • An IR phosphor is also included, the emission of which covers the wavelength ranges from 700 nm to 850 nm, ie the spectral range SB.
  • An IR phosphor with the trade name IRF820A from the manufacturer QCR-Solutions was chosen here.
  • Part of the emission of the secondary phosphor is converted by the tertiary phosphor, which belongs to the class of "Egyptian Blue” dyes, into radiation in the range from 800 nm to 1000 nm, that is to say in a spectral range SC.
  • a supplementary emitter D is provided in the form of an additional supplemental phosphor in the red range, which covers the range from 650 nm to 700 nm and raises the spectrum in the spectral range SD, from 650 nm to 700 nm.
  • This can in turn be a Europium-doped (Ca, Sr) AISiN 3 nitride.
  • This emitter 10 thus has a homogeneous spectral emission in the range from 550 nm to 1000 nm.
  • This solution has a radiation power in the IR range that is many times higher than that of prior art solutions.
  • FIG. 6 shows two spectra 28a, 28b of a third exemplary embodiment.
  • the radiation intensity is plotted on the ordinate 30 and the wavelength on the abscissa 32, the abscissa 32 in the diagram of a spectrum from right to left describing a range from 400 nm to 1100 nm.
  • the spectrum 28a of an emitter 10 without tertiary radiation is shown as a continuous line.
  • the spectrum 28b of an emitter 10 with tertiary radiation is shown as a dashed line.
  • the source 10 can be constructed as shown in FIG. 3.
  • a blue-emitting chip with a peak wavelength of 450 nm +/- 30 nm, preferably 450 nm +/- 10 nm, in the form of an LED chip 12 has a directly applied matrix 20 in the form of a phosphor layer and is on a suitable circuit carrier arranged.
  • the phosphor layer has a secondary emitter in the form of a secondary phosphor.
  • the radiation emitted by this chip already contains the primary and secondary radiation.
  • the source can have a cover 26 in the form of a transparent carrier, for example made of glass.
  • a further matrix 24 is arranged on the side of the cover 26 facing the LED chip 12, which matrix has a phosphor mixture 14 which contains the further secondary phosphor B and tertiary phosphor C.
  • the spectrum 28a without tertiary radiation shows two peaks, a first peak at approximately 450 nm corresponding to the emission of the primary emitter, that is to say the LED chip 12.
  • the second peak is at approx. 550 nm and corresponds to the emission of the phosphor A. Its emission covers the spectral range SA, from 550 nm to 650 nm.
  • the phosphors used in the matrix 20 are either YAG phosphors or a mixture of orthosilicate phosphors (Sr, Ba, Ca, Mg) (2-6) Si (1-2) 0 (4-19) : Eu, the under known as BOSE, with green (545 nm) and orange (610 nm) emission.
  • Another secondary phosphor, the fluorescent TL-0156 from the manufacturer Tailorlux and the tertiary phosphor "Egyptian blue" are incorporated in the matrix 24.
  • FIG. 7 shows schematically the steps of a method according to the invention.
  • primary radiation is emitted by means of a primary emitter 11.
  • secondary radiation is emitted by means of a secondary emitter A in response to an excitation with the primary radiation.
  • tertiary radiation is emitted by means of a tertiary emitter C in response to an excitation with the secondary radiation.
  • the primary, secondary and / or tertiary radiation have at least partially different wavelengths in order to create a broadband spectrum 28.
  • the phosphors that can be used, reference is made to the previous exemplary embodiments.
  • a durable and energy efficient source can be created using an LED chip 12.
  • the source has a high local homogeneity due to the cascade-like excitation.
  • the source Compared to halogen or incandescent lamps, the source generates significantly less heat. Sometimes cooling of the source can be dispensed with.

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  • Led Device Packages (AREA)

Abstract

L'invention concerne un émetteur (10) pour rayonnement électromagnétique, comprenant : un émetteur primaire (11) pour émettre un rayonnement primaire; un émetteur secondaire (A) pour émettre un rayonnement secondaire en réaction à une excitation avec le rayonnement primaire; et un émetteur tertiaire (C) pour émettre un rayonnement tertiaire en réaction à une excitation avec le rayonnement secondaire, les rayonnements primaire, secondaire et/ou tertiaire présentant au moins en partie des longueurs d'onde différentes l'une de l'autre pour créer un spectre à large bande. La présente invention concerne en outre un spectroscope, une caméra hyperspectrale et un endoscope équipés d'un tel émetteur (10) ainsi qu'un procédé de production d'un rayonnement électromagnétique.
EP19769716.2A 2018-08-29 2019-08-27 Émetteur large bande pour rayonnement électromagnétique Withdrawn EP3843611A1 (fr)

Applications Claiming Priority (2)

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DE102018121077 2018-08-29
PCT/EP2019/072813 WO2020043709A1 (fr) 2018-08-29 2019-08-27 Émetteur large bande pour rayonnement électromagnétique

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EP3843611A1 true EP3843611A1 (fr) 2021-07-07

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WO (1) WO2020043709A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3863371A1 (fr) * 2020-02-07 2021-08-11 Infineon Technologies AG Émetteur infrarouge doté d'un couvercle de verre

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101138104B (zh) * 2005-06-23 2011-08-24 伦斯勒工业学院 利用短波长led和下变频材料产生白光的封装设计
WO2007070821A2 (fr) 2005-12-13 2007-06-21 Ilight Technologies, Inc. Dispositif d'eclairage avec transformation de la teinte
US9062853B2 (en) * 2010-07-12 2015-06-23 National University Corporation Nagoya University Broadband infrared light emitting device
DE102014108188A1 (de) * 2014-06-11 2015-12-17 Osram Gmbh Optoelektronisches Halbleiterbauteil
US10538679B2 (en) * 2015-03-02 2020-01-21 Mitsui Mining & Smelting Co., Ltd. Phosphor
WO2017159175A1 (fr) * 2016-03-14 2017-09-21 三井金属鉱業株式会社 Substance fluorescente
DE102017106776A1 (de) * 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit Halbleiterchip
CN108467733B (zh) * 2018-04-08 2021-07-09 有研稀土新材料股份有限公司 一种近红外荧光粉、其制备方法及含该荧光粉的发光装置

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DE102019122925A1 (de) 2020-03-05

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