EP3784814A1 - Mit mehreren zweidimensionalen schichten beschichtetes bauteil sowie beschichtungsverfahren - Google Patents
Mit mehreren zweidimensionalen schichten beschichtetes bauteil sowie beschichtungsverfahrenInfo
- Publication number
- EP3784814A1 EP3784814A1 EP19719239.6A EP19719239A EP3784814A1 EP 3784814 A1 EP3784814 A1 EP 3784814A1 EP 19719239 A EP19719239 A EP 19719239A EP 3784814 A1 EP3784814 A1 EP 3784814A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- substrate
- component
- layers
- layer elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5866—Treatment with sulfur, selenium or tellurium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/048—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with layers graded in composition or physical properties
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0423—Physical vapour deposition
- H01M4/0426—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0428—Chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/663—Selection of materials containing carbon or carbonaceous materials as conductive part, e.g. graphite, carbon fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/10—Primary casings; Jackets or wrappings
- H01M50/116—Primary casings; Jackets or wrappings characterised by the material
- H01M50/122—Composite material consisting of a mixture of organic and inorganic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/10—Primary casings; Jackets or wrappings
- H01M50/116—Primary casings; Jackets or wrappings characterised by the material
- H01M50/124—Primary casings; Jackets or wrappings characterised by the material having a layered structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the invention relates to a coated substrate and a method for coating a substrate, wherein from the substrate, a component is produced, wherein the substrate is bent and the layer is a layer system of two-dimensional layers.
- WO 2013/144640 A1, WO 2017/100616 A1 and WO 2015/102746 A2 describe a method for depositing a plurality of layers arranged one above the other, each layer consisting of non-interconnected layer elements having a two-dimensional layer - have character.
- a metal foil is used as the substrate.
- components in particular made of metal components, which consist of a deformed substrate, wherein the surface of the component is coated, wherein it is provided in particular that the coating has a plurality of superimposed layers and each layer has a two-dimensional
- the layer is what the layer deposition uses materials that inherently form two-dimensional crystals, such as C, M0S2, MoTe 2 , WTe 2 or other IV main group materials or a transition metal.
- the invention has for its object to provide a method by which such, consisting of a deformed substrate component can be produced.
- an initially undeformed substrate for example a flat or only slightly bent metal sheet, or a stretched or only slightly bent wire made of metal or another suitable material be coated with a plurality of layers, each layer consists of layer elements which have a two-dimensional character and thus can each be regarded as a monolayer.
- a first layer is first deposited directly onto the surface of the substrate.
- the first layer consists of a multiplicity of layer elements which lie next to one another in a plane parallel to the surface of the substrate and preferably do not coexist. are connected to each other. Spacer zones may be located between the layer elements in which the first layer does not cover the substrate.
- the first layer is in particular a patchy coating of the substrate.
- At least one second, in particular similar, layer is deposited onto this first layer.
- This layer likewise consists of layer elements which are arranged next to one another in the plane of the second layer and which, in particular, is not connected to one another.
- the deposition of the layers generates layered randomly arranged layer elements in the respective level. Between the layer elements, which have an irregular size, are at least partially spaced zones, which have a different size. The spacing zones of the first layer are thus at least partially covered by layer elements of the second layer, so that the open areas of the surface are reduced.
- a third layer is deposited, which has the same layer properties as the first and second layers.
- the remaining open zones of the substrate surface are further reduced.
- the free surface areas are further reduced to zero by covering all the spacing zones of the first layer of layer elements of at least one of the further layers.
- the method is carried out in such a way that the layer elements of a layer are only connected to one another softly with the layer elements of an adjacent layer, so that the layer elements can shift towards one another during deformation of the substrate.
- the deformation can be a bending.
- the bending of the substrate may have a bending radius that is substantially greater than the layer thickness of a layer.
- the layer thickness of a layer is less than 2 nm and is preferably in a range between 0.1 and 0.8 nm.
- the bending radii can be between 0.1 mm and 5 mm.
- the layer elements are displaced away from one another during bending, so that the abraded S tandszonen zoom between the layer elements.
- the layer elements are displaced toward one another on the inside of the bend so that the spacing zones are reduced.
- between 2 and 200 layers are deposited on the substrate.
- the layers are deposited on the substrate in such a way that the layer elements are mutually displaced when the substrate is deformed, with a sufficient number of layers being deposited one above the other without resulting in open areas of the surface of the substrate.
- the layer elements glide over one another during the deformation without losing their function covering the distance zones of the first layer.
- the deformation can not only be a bending, but also an extension or a compression.
- a compression the layer elements are pushed towards each other. When stretched, the layer elements are moved away from one another. In the first case, the distance zones between the layer elements decrease. In the second case, the distance zones between the layer elements increase. The closed coating produced during the production of the coating is retained even during the deformation of the substrate.
- the substrates are metallic substrates which are coated with graphene. It is further provided in particular that the components are housings or electrodes of batteries or accumulators. With the coating, the electrical conductivity of the substrate can be increased. It can increase the chemical resistance. Also, the friction property (tribological property) can be changed.
- the coating can be conductive or insulating.
- the coating can be prepared in a gas phase deposition process (CVD).
- CVD gas phase deposition process
- the catalytic CVD is preferred, in which in particular the substrate acts as a catalyst.
- One Alternative manufacturing method uses a liquid phase coating in which the layer elements are contained as a solid in a liquid solution. This dispersion is used to coat the substrate, so that the chip-like layer elements can deposit on the substrate or on an already deposited layer.
- the deposition process produces in each case a monolayer of a layer of two-dimensional layer elements, wherein the circle-equivalent diameter of an irregularly shaped layer element can be in the range between 1 gm and 10 mm.
- the lateral extension length that is, for example, the circle-equivalent diameter of a layer element, is in particular smaller than the bending radius. It is particularly advantageous if the shape of the layer elements is retained during the deformation, ie in particular the layer elements do not divide during the deformation.
- the layer elements should preferably only change their position during the deformation.
- the layer elements preferably have circular-equivalent diameters in the range between 1 gm and 100 gm.
- a preferred deposition method is CVD, in which at least two different process gases are introduced into a process chamber in which the substrate is heated to a process temperature.
- the process gas may be a carbon-containing gas, for example methane or another hydrocarbon.
- an inert gas can be fed into the process chamber.
- the coating consists of several components, for example a transition metal and an element of the IV main group
- the two components of the layer are fed into the process chamber in gaseous form, with each component being fed into the process chamber with its own gas.
- the layer forming the layer elements may be a semiconducting layer, a semi-metallic layer, an insulating layer or a sliding layer. It can be applied to a metal sheet, which is precoated. For example, it may be precoated with molybdenum.
- the deposition of the layer can be carried out in a PVD (Physical Vapor Deposition) process, for example by sputtering, vapor deposition It may be provided to deposit a three-dimensional layer and then to convert it into a 2D layer by suitable measures, for example by first depositing a metal, for example molybdenum and then treating the metal layer with a gas, for example Such a transformation of the metal layer into a two-dimensional MoS 2 layer can take place at 500 ° C.
- PVD Physical Vapor Deposition
- a MoS 2 layer can also be deposited directly as a two-dimensional layer, for example using a metal organic chemical vapor deposition (MOCVD) method , Hexacarbonyl or molybdenum
- MOCVD metal organic chemical vapor deposition
- the second gaseous starting material used is one of the abovementioned sulfur-containing gaseous starting materials, that is to say, for example, H 2 S or di-tert-butyl sulfide.
- the substrate temperature can be in a range between 500 and 1000 ° C here.
- organometallic chemical vapor deposition MOCVD
- a metal strip is heated to temperatures in the range between 500 ° C and 1500 ° C.
- the process gases used are a boron-containing gaseous starting material, for example diborane or triethyl borane.
- the nitrogen-containing gaseous starting material ammonia can be used. It is also possible to use a gas containing boron and nitrogen. Also suitable is borane or borazine.
- a metallic substrate can first be coated with a catalytic substrate.
- the catalytic layer can be a layer of iron, cobalt, nickel, platinum, copper or another suitable metal.
- the catalyst S can chicht egg through ner PVD or electroplating be applied.
- the substrate is preferably heated to temperatures in the range between 400 ° C and 1000 ° C. This takes place in the presence of a carbon-containing gaseous starting material, such as, for example, methane, ethylene, acetylene or propane. Under these conditions, a two-dimensional carbon / graphene layer can be deposited.
- a substrate may be used which has catalytic properties by itself.
- This substrate which is coated stationarily or in a continuous process, can then be heated to temperatures in the range between 400 ° C and 1000 ° C.
- the deposition of the layer or the layer system is then carried out by introducing a carbon-containing gas into a process chamber of a reactor.
- higher temperatures are used, for example temperatures in the range between 400 ° C and 1500 ° C.
- FIG. 2 shows a view according to FIG. 1, but after bending, the coating lying on the outside of the bend, FIG.
- FIG. 3 shows a representation according to FIG. 1 after bending, the coating lying on the inside of the bend
- FIG. 4 is a schematic plan view of a layer sequence to clarify the irregular position of the layer elements.
- the substrate 5 is a sheet metal or a wire and consists for example of a metal, in particular Fe, Ni, Co, Cu or an alloy thereof.
- the substrate 5 is coated with a first graphene layer 1 in a coating installation, as described, for example, in DE 10 2015 110 087 A1.
- the coating process is carried out in such a way that first a monolayer of a plurality of irregular layer elements 11 is deposited on the substrate 5. Between each of the layer elements 11 remains a spacing zone 21, so that the substrate 5 is only incompletely coated with the layer elements 11 of the first layer 1.
- a second, in particular graphene layer 2 is deposited on the first, in particular graphene layer 1, in particular using the same process parameters.
- This layer also consists of a multiplicity of layer elements 12 arranged in the layer plane of the second layer 2, between which spacing zones 22 are located. A large proportion of the free surface of the surface of the substrate 5 formed by the spacing zones 21 of the first layer 1 is covered by the layer elements 12 of the second layer 2, so that the free area of the surface 5 is reduced.
- the irregular and irregularly distributed Schichtelemen- te 13 cover both parts of the distance zones 22 of the second layer as well as still open, not covered by the second layer spacer zones 21st the first layer. With the third layer 3, the remaining area of the surface of the substrate 5 is further reduced.
- a fourth layer 4 is deposited on the third layer 3, in particular with the same process parameters, which likewise consists of layer elements 14 arranged in the layer plane of the graphene layer 4, between which spacing zones 24 remain.
- the statistically distributed layer elements 12, 13, 14 of the second to fourth layer cover the distance zones 21 of the layer elements 11 randomly distributed on the substrate surface.
- the layer elements 11, 12, 13, 14 are connected to each other soft. These are essentially van der Waals forces which hold the layer elements 11, 12, 13, 14 of different layers 1, 2, 3, 4 together.
- the coating is carried out in such a way that the layer elements 11, 12, 13, 14 can shift relative to one another when the coated substrate 5 is bent, wherein the displacement does not lead to the layer elements 11, 12, 13, 14 lose their completely covering the surface 5 function. During the shift of the layer elements 11, 12, 13, 14, the layer elements also do not lose their shape. They do not break or tear.
- the coating is arranged on a bend outside.
- the double arrow symbolizes Siert that the layer elements 11, 12, 13, 14 are displaced away from each other in the bending of the substrate 5.
- the distance zones 21, 22, 23, 24 increase in this case.
- the spacing zones 21, 22, 23 are sufficiently covered by the layer elements 12, 13, 14 that the coating as a whole is closed.
- FIG. 3 shows a coating arranged on the bend inner side.
- the layer elements 11, 12, 13, 14 move towards one another in the direction of the arrows shown there.
- the distance zones 21, 22, 23, 24 decrease in size.
- the spacing zones 21, 22, 23, 24 are sufficiently large in order to avoid that layer elements come into contact with one another and thereby destroy the layer system.
- the coated substrate 5 is either stretched or compressed.
- stretched the spacing zones 21, 22, 23, 24 increase, as shown in FIG.
- a compression reduce the spacing zones 21, 22, 23, 24, as shown in Figure 3 represents.
- the material thickness of the substrate 5 can be reduced.
- the spacings of the layer elements 11, 12, 13, 14 increase.
- Layer elements 11, 12, 13, 14 retain their shape during the deformation and only slide against each adjacent layer.
- the layer elements 11, 12, 13, 14 each consist of a two-dimensional monolayer.
- the layer thickness can be in the range of 0.3 nm to 0.65 nm.
- the layer elements 11, 12, 13, 14 are arranged in parallel to one another in each case in a plane associated with the respective layer. But it is also possible that the layer elements 11, 12, 13, 14 partially overlap to form a scaly structure. It is also provided, in particular, that the layer elements 11, 12, 13, 14 lie over one another like a zigzag.
- a further exemplary embodiment relates to the deposition of a two-dimensional MoS 2 layer or layer sequence on a substrate, each layer having the layer elements described above.
- a molybdenum layer is applied on a metal substrate, such as a metal sheet.
- the sputtering can be done at a power of 300 W at radio frequency, using as the carrier gas argon with a flow of 10 sccm.
- the process takes place at a total pressure of 10 -3 mbar for about 5 minutes.
- an approximately 5 nm thick layer of molybdenum is deposited on the substrate.
- the metal substrate is then heated to a temperature of up to 700 ° C.
- the hydrogen flow can be at 250 sccm.
- the metal substrate with the applied thin molybdenum layer is exposed to a sulfur-containing process gas.
- This process gas containing sulfur can be fed together with an inert gas, for example argon or hydrogen, into a process chamber of a reactor.
- the sulfur-containing process gas can be produced by heating sulfur powder in a crucible to about 500.degree.
- the sulfur vapor reacts with the molybdenum of the molybdenum layer, so that one or more superimposed layers form.
- Two-dimensional M0S2 layer elements arranged in superimposed planes form.
- the treatment of the molybdenum layer with a gaseous, sulfur-containing starting material takes place for about 5 min.
- a metal sheet may be heated to a temperature of 850 ° C in a nitrogen atmosphere and / or hydrogen atmosphere. It is envisaged that the metal sheet is treated in an atmosphere of 250 sccm of nitrogen and 1000 sccm of hydrogen at 100 mbar at 850 ° C.
- the metal substrate is under these conditions a mixture of
- an insulating two-dimensional coating which contains BN (boron nitride).
- the boron nitride layer or layer sequence containing boron nitride layer elements is produced in the MOCVD process.
- the metallic substrate is heated to temperatures of 500 ° C. to 1500 ° C. and is charged with a boron-containing, in particular gaseous starting material. Di-borane or tri-ethyl-borane may be considered.
- a nitrogen-containing starting material is used as the second gaseous starting material. Ammonia is possible. It can also be provided that a starting material containing both boron and nitrogen is used, for example ammonium borane or borazine.
- the substrate has been previously coated with a catalytic metal, for example nickel or copper. It is also possible to use a nickel or copper substrate which itself has a catalytic effect.
- the metal is heated to temperatures of about 1000 ° C in a hydrogen atmosphere (200 sccm). This takes place at a total pressure of 1 mbar.
- the metal substrate is then at a flow of 1 sccm Borazine or ammonium di-borane treated. Borazine or ammonium di-borane are evaporated from a liquid phase. This can be done at a temperature of 250 ° C.
- the boron-containing and nitrogen-containing gas is added to the inert gas, which is in particular hydrogen. In this treatment, two-dimensional boron nitride layer elements are formed, which are arranged in the manner described above to form a layer sequence.
- a two-dimensional, carbon-containing layer is deposited.
- Such a layer is usually a graphene layer.
- the substrate used may be a catalytically active substrate, for example of iron, cobalt, nickel, platinum or copper.
- another substrate is used which is first coated with a catalytic metal such as iron, cobalt, nickel, platinum or copper. This can be done by a PVD, for example by Electroplating.
- the substrate is heated to temperatures in the range between 400 ° C and 1000 ° C.
- a two-dimensional graphene layer is formed on the thus prepared surface.
- a carbon-containing gas for example methane, ethylene, acetylene or propane
- a two-dimensional graphene layer is formed on the thus prepared surface.
- the already catalytically active substrate can be used. If the substrate is not catalytic, the coating process is preferably carried out in a temperature range between 400 and 1500 ° C.
- the catalytically active metal for example iron, copper, nickel, platinum or copper can be sputtered onto the surface. This takes place, for example, in a plasma or with an electron beam at an power of 300 W and radio frequency.
- the carrier gas used is argon with a flow of 10 sccm.
- the pressure is here in the range between 10 3 mbar.
- the deposition process takes 10 min. During this time, an about 10 nm thick cobalt or nickel layer is deposited on the metal.
- Electroplating is proposed as an alternative deposition method. However, it is also intended to apply a catalytically active layer galvanically on the substrate. The substrate is placed in an electrolytic bath.
- a negative voltage is applied to the substrate.
- the metal substrate is heated to temperatures of up to 800 ° C., this taking place in a gas environment consisting of hydrogen and argon. This is preferably done at a total pressure of 25 mbar.
- a flow of 1000 sccm of hydrogen and 250 sccm of argon is fed.
- a gas containing carbon for example, acetylene (10 sccm for 5 min)
- a graphene layer is deposited.
- the carbon-containing gas is fed to the process chamber in addition to the inert gas, so that the two-dimensional carbon layer system is deposited on the catalytic metal layer.
- the metal substrate which is either catalytic in nature or coated with a catalytic coating, may be heated to as low as 700 ° C for depositing the two-dimensional carbon layers, in the presence of nitrogen (950 sccm) ) and hydrogen (40 sccm). To this carrier gas mixture Then 10 sccm of acetylene is fed into the process chamber for 5 minutes to deposit the two-dimensional graphene layer system.
- deviating flow values of the process gases can also be used.
- the temperatures can be adapted to the respective conditions and in particular to the starting materials used.
- the substrate is either stationary in a process chamber or passes through the process chamber as an endless strip "roll to roll.” Uncoated substrate material enters the process chamber on one side, is coated therein with a layer system, the layers one after the other The coated substrate emerges again from the process chamber on the other side of the process chamber
- the invention relates to inventions which are generally covered and which independently further develop the state of the art, at least by the following combinations of features, wherein two, several or all of these feature combinations can also be combined, namely: [0036] FIG , permanently bent
- a component or a method characterized in that the substrate 5 is a thin sheet or a wire and / or that the substrate 5 is made of Fe, Ni, Co, Cu or an alloy with at least one of the previously described is called elements and / or is a coated metal.
- a component or a method which is characterized in that the layers 1, 2, 3, 4 and / or the layer elements 11, 12, 13, 14 consist of two-dimensional crystals.
- a component or a method which are characterized in that the lateral surface extension of the layer elements 11, 12, 13, 14 is substantially greater than the layer thickness and in particular at least one thousand times as large.
- a component or a method which are characterized in that the layer elements 11, 12, 13, 14 of different layers 1, 2, 3, 4 sliding on one another and / or overlap such that even after bending the surface of the substrate 5 is completely coated with layer elements 11, 12, 13, 14.
- a component or a method which is characterized in that spacer zones 21, 22, 23, 24 are arranged between layer elements 11, 12, 13, 14 of a respective layer 1, 2, 3, 4, the spacer zones 21 of a deposited directly on the substrate 5 first layer 1 of at least one layer element 12, 13, 14 of a deposited on the first layer 1 further layer 4 is covered.
- a component or a method which is characterized in that the layer thickness of the layers 1, 2, 3, 4 is less than 2 nm and in particular in the range between 0.1 and 0.8 nm and / or that the circle-equivalent diameter of a layer element 11, 12, 13, 14 is in the range between 1 gm and 10 mm, in particular in a range between 1 gm and 100 gm or in a range between 100 gm and 10 mm and / or that the substrate 5 with 2 to 200 layers 1, 2, 3, 4 is coated.
- a component or a method which are characterized in that for depositing the layers, a chemical vapor deposition CVD, in particular a catalytic CVD in particular the substrate 5 a develops catalytic effect or a liquid phase coating, in which the layer elements 11, 12, 13, 14 are deposited in particular in the form of a dispersion is used and / or that in a gas phase separation two mutually different process gases are used and / or the substrate Heat is supplied.
- a chemical vapor deposition CVD in particular a catalytic CVD in particular the substrate 5 a develops catalytic effect or a liquid phase coating, in which the layer elements 11, 12, 13, 14 are deposited in particular in the form of a dispersion is used and / or that in a gas phase separation two mutually different process gases are used and / or the substrate Heat is supplied.
- a component or a method characterized in that the deformation is a three-dimensional deformation, in particular a bending and / or that the deformation is a stretching or a compression.
- a component or a method which is characterized in that the coating increases the electrical conductivity and / or increases the chemical resistance and / or changes the tribological property of the surface and / or that the coating is electrically conductive or electrically insulating is and / or that the bending radius of bending lines of the substrate 5 is in the range between 0.1 to 5 mm.
- a component or a method characterized in that the component is a housing or an electrode of a battery or of an accumulator.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102018109936.3A DE102018109936A1 (de) | 2018-04-25 | 2018-04-25 | Mit mehreren zweidimensionalen Schichten beschichtetes Bauteil sowie Beschichtungsverfahren |
| PCT/EP2019/060037 WO2019206786A1 (de) | 2018-04-25 | 2019-04-18 | Mit mehreren zweidimensionalen schichten beschichtetes bauteil sowie beschichtungsverfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3784814A1 true EP3784814A1 (de) | 2021-03-03 |
Family
ID=66251776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19719239.6A Pending EP3784814A1 (de) | 2018-04-25 | 2019-04-18 | Mit mehreren zweidimensionalen schichten beschichtetes bauteil sowie beschichtungsverfahren |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20210062332A1 (de) |
| EP (1) | EP3784814A1 (de) |
| JP (1) | JP7805707B2 (de) |
| KR (1) | KR102817670B1 (de) |
| CN (1) | CN112272715A (de) |
| DE (1) | DE102018109936A1 (de) |
| TW (1) | TWI852928B (de) |
| WO (1) | WO2019206786A1 (de) |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT501722B1 (de) * | 2005-07-12 | 2006-11-15 | Miba Gleitlager Gmbh | Beschichtungsverfahren |
| US20070247422A1 (en) | 2006-03-30 | 2007-10-25 | Xuuk, Inc. | Interaction techniques for flexible displays |
| EP2458620B1 (de) * | 2010-11-29 | 2021-12-01 | IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik | Herstellung von Graphenelektronikbauelementen mittels Stufenoberflächenkontur |
| WO2012093360A1 (en) * | 2011-01-04 | 2012-07-12 | Ecole Polytechnique Federale De Lausanne (Epfl) | Semiconductor device |
| GB201205801D0 (en) * | 2012-03-30 | 2012-05-16 | Isis Innovation | Process |
| CN103545555B (zh) * | 2012-07-13 | 2016-01-20 | 清华大学 | 锂离子电池的制备方法 |
| US8664642B1 (en) * | 2013-03-15 | 2014-03-04 | Solan, LLC | Nonplanar graphite-based devices having multiple bandgaps |
| DE102013111791A1 (de) * | 2013-10-25 | 2015-04-30 | Aixtron Se | Vorrichtung und Verfahren zum Abscheiden von Nano-Schichten |
| WO2015102746A2 (en) * | 2013-11-04 | 2015-07-09 | Massachusetts Institute Of Technology | Electronics including graphene-based hybrid structures |
| DE102015110087A1 (de) | 2015-06-23 | 2016-12-29 | Aixtron Se | Fördereinrichtung für ein Substrat |
| WO2017018834A1 (ko) * | 2015-07-29 | 2017-02-02 | 한국표준과학연구원 | 2차원 전이금속 디칼코지나이드 박막의 제조 방법 |
| WO2017100616A1 (en) * | 2015-12-10 | 2017-06-15 | Massachusetts Institute Of Technology | Universal methodology to synthesize diverse two-dimensional heterostructures |
| CN105803403B (zh) * | 2016-03-15 | 2018-05-15 | 东华大学 | 一种电致动氧化石墨烯/金属双层薄膜及其制备方法 |
| KR20170132450A (ko) * | 2016-05-24 | 2017-12-04 | 해성디에스 주식회사 | 전선 구조체 및 이의 제조 방법 |
| TWI720181B (zh) * | 2016-05-30 | 2021-03-01 | 日商新力股份有限公司 | 薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法 |
| JP6747061B2 (ja) * | 2016-05-31 | 2020-08-26 | 大日本印刷株式会社 | 無機層状材料、無機層状材料積層体、及び無機層状材料分散液 |
| WO2018005838A1 (en) * | 2016-06-30 | 2018-01-04 | The Regents Of The Universtiy Of California | Chemically assembled two-dimensional junctions |
| DE102016118404A1 (de) | 2016-09-29 | 2018-03-29 | Aixtron Se | Elektrode für einen Lithium-Ionen-Akkumulator bzw. Vorrichtung und Verfahren zu deren Herstellung |
-
2018
- 2018-04-25 DE DE102018109936.3A patent/DE102018109936A1/de not_active Withdrawn
-
2019
- 2019-04-18 WO PCT/EP2019/060037 patent/WO2019206786A1/de not_active Ceased
- 2019-04-18 EP EP19719239.6A patent/EP3784814A1/de active Pending
- 2019-04-18 CN CN201980039365.6A patent/CN112272715A/zh active Pending
- 2019-04-18 US US15/733,779 patent/US20210062332A1/en not_active Abandoned
- 2019-04-18 KR KR1020207033348A patent/KR102817670B1/ko active Active
- 2019-04-18 JP JP2020559427A patent/JP7805707B2/ja active Active
- 2019-04-23 TW TW108114141A patent/TWI852928B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2021522414A (ja) | 2021-08-30 |
| JP7805707B2 (ja) | 2026-01-26 |
| WO2019206786A1 (de) | 2019-10-31 |
| KR20210005898A (ko) | 2021-01-15 |
| US20210062332A1 (en) | 2021-03-04 |
| TW201945590A (zh) | 2019-12-01 |
| TWI852928B (zh) | 2024-08-21 |
| DE102018109936A1 (de) | 2019-10-31 |
| KR102817670B1 (ko) | 2025-06-05 |
| CN112272715A (zh) | 2021-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3687720T2 (de) | Verfahren zum herstellen multimetallischer ueberzuege aus amorphen legierungen. | |
| EP3583645B1 (de) | Verfahren zur herstellung einer bipolarplatte für proton-exchange-membrane-brennstoffzellen (pemfc) | |
| DE102017114249A1 (de) | TiSiN-Beschichtungsverfahren | |
| DE19514081A1 (de) | Verfahren zum Herstellen eines elektrischen Kontakts auf einer SiC-Oberfläche | |
| DE3118320A1 (de) | Katalytischer koerper und verfahren zu dessen herstellung | |
| DE112010001642T5 (de) | Material auf titanbasis, verfahren zum herstellen eines materials auf titanbasis und brenstoffzellenseparator | |
| WO2009129930A1 (de) | Schichtwiderstand mit konstantem temperaturkoeffizienten sowie herstellung eines solchen schichtwiderstands | |
| DE112010005552T5 (de) | Trägerkatalysator | |
| DE69006149T2 (de) | Kohlenstoffelektrode. | |
| WO2019206786A1 (de) | Mit mehreren zweidimensionalen schichten beschichtetes bauteil sowie beschichtungsverfahren | |
| DE102009023471A1 (de) | Beschichtungsanlage und -verfahren | |
| EP0413853B1 (de) | Beschichtetes Werkstück mit einer Mischkristallbeschichtung, Verfahren zu dessen Herstellung, sowie Vorrichtung zur Durchführung des Verfahrens | |
| DE102009015545B4 (de) | Beschichtungsanlage mit Aktivierungselement, deren Verwendung sowie Verfahren zur Abscheidung einer Beschichtung | |
| DE102013209921B4 (de) | Verfahren zur Herstellung eines Brennstoffzellenreaktanden-Strömungsfeldes | |
| DE2214305A1 (de) | Verfahren zur Herstellung einer insbesondere für Speicherzwecke geeigneten Halbleitervorrichtung | |
| DE102021111558B4 (de) | Verfahren zur Bearbeitung eines Halbzeugs für ein elektrisches Kontaktelement, Halbzeug für ein elektrisches Kontaktelement | |
| DE102017203910A1 (de) | Verfahren und Vorrichtung zum Abscheiden lithiumhaltiger Mischoxide | |
| DE2453918C3 (de) | Verfahren zur Herstellung eines elektrischen Kontaktstücks | |
| DE19822928C2 (de) | Verfahren zum haftenden Aufbringen einer Beschichtung auf eine tribologisch beanspruchte Oberfläche eines Kettenglieds sowie Kettenglied | |
| DE102019135296A1 (de) | Metallisierte Folie, Vorrichtung für die Herstellung einer metallisierten Folie, Verfahren zur Herstellung einer metallisierten Folie und Folienkondensator, der die metallisierte Folie enthält | |
| WO2013174560A2 (de) | Zinnbeschichtung, zugehöriges kontaktelement und verfahren zum aufbringen einer zinnbeschichtung | |
| WO2020001678A1 (de) | Wachstum von schichtsystemen für tribologische anwendungen, bestehend aus kohlenstoffnanozwiebeln und katalysatoren | |
| DE10316379B4 (de) | Verfahren zur Herstellung von Metall-Polymer-Nanokompositen | |
| DE102006053930B4 (de) | Herstellungsverfahren für eine Transistor-Gatestruktur | |
| DE102020122677A1 (de) | Verfahren zum Abscheiden einer zweidimensionalen Schicht |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: UNKNOWN |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
| 17P | Request for examination filed |
Effective date: 20201105 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
| AX | Request for extension of the european patent |
Extension state: BA ME |
|
| DAV | Request for validation of the european patent (deleted) | ||
| DAX | Request for extension of the european patent (deleted) | ||
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
| 17Q | First examination report despatched |
Effective date: 20240202 |