EP3740340A1 - Procédé de durcissement de pâte à souder sur un substrat thermiquement fragile - Google Patents
Procédé de durcissement de pâte à souder sur un substrat thermiquement fragileInfo
- Publication number
- EP3740340A1 EP3740340A1 EP18901662.9A EP18901662A EP3740340A1 EP 3740340 A1 EP3740340 A1 EP 3740340A1 EP 18901662 A EP18901662 A EP 18901662A EP 3740340 A1 EP3740340 A1 EP 3740340A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- solder paste
- optically
- fragile substrate
- thermally fragile
- absorptive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/005—Soldering by means of radiant energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/40—Paper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13199—Material of the matrix
- H01L2224/1329—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/7526—Polychromatic heating lamp
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75261—Laser
- H01L2224/75262—Laser in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75261—Laser
- H01L2224/75263—Laser in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/8123—Polychromatic or infrared lamp heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81234—Applying energy for connecting using means for applying energy being within the device, e.g. integrated heater
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0108—Transparent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0112—Absorbing light, e.g. dielectric layer with carbon filler for laser processing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
Definitions
- the present invention relates to curing processes in general, and, in particular, to a method for curing solder paste on a thermally fragile substrate using pulsed light.
- the current trend is to move away from using ceramic, glass, or epoxy fiber glass-based circuit boards (such as FR4) as a substrate material, and progresses towards relatively inexpensive substrates for lower cost and more flexible form factors.
- the new substrate materials (such as PEN, PET, polycarbonate and paper), however, tend to be more thermally fragile than their predecessors. This can become problematic when high temperatures are required to process thin films or to attach discrete components to the substrates. For example, the process of soldering components onto thermally fragile substrates becomes very difficult because conventional solders require a much higher processing temperature than those thermally fragile substrates can handle.
- the present disclosure provides an improved method for curing solder paste on a thermally fragile substrate.
- an optically reflective layer and an optically absorptive layer are printed on a thermally fragile substrate.
- Multiple conductive traces are selectively deposited on the optically reflective layer and on the optically absorptive layer.
- Solder paste is then applied on selective locations that are corresponding to locations of the optically absorptive layer.
- the substrate is irradiated from one side with uniform pulsed light.
- the optically absorptive layer absorbs the pulsed light and becomes heated, and the heat is subsequently transferred to the solder paste and the component via thermal conduction in order to heat and melt the solder paste.
- Figures 1A-1D depict a method for curing solder paste on a thermally fragile substrate using pulsed light, according to a first embodiment
- Figures 2A-2E depict a method for curing solder paste on a thermally fragile substrate using pulsed light, according to a second embodiment.
- the first method is to use a low-temperature solder to attach components
- the second method is to use electrically conducting epoxy to attach the components.
- the problem with the first method is that the performance of low-temperature solders is significantly less robust than that of the higher temperature conventional solders, and thermal cycling may cause low-temperature solders to crack.
- the second method is more expensive than using conventional solder.
- the electrically conducting epoxy is mechanically more fragile, and the electrical resistivity of conductive adhesives used in the second method are much worse than that of low-temperature solder.
- neither of the above-mentioned two methods is preferable due to low performance and/or high cost.
- Reactive Soladium solder such as Sn 96.5/Ag 3.0/Cu 0.5 or Sn 96.5/Ag 3.5 alloys. These solders have a liquidus temperature of about 219 °C. Typical oven reflow soldering temperature conditions are greater than 200 °C for 5 minutes. Unfortunately, the oven reflow soldering technique precludes the use of thermally fragile substrates such as PEN (having a maximum working temperature of 180 °C), PET (having a maximum working temperature of 150 °C), polycarbonate (having a maximum working temperature of 115-130 °C), or paper (having a maximum working temperature of 150 °C).
- PEN having a maximum working temperature of 180 °C
- PET having a maximum working temperature of 150 °C
- polycarbonate having a maximum working temperature of 115-130 °C
- paper having a maximum working temperature of 150 °C.
- the photonic curing technique has been utilized to process a thin film on a thermally fragile substrate.
- the combination of higher temperature and lower thermal budget from a short pulse of light can be utilized to process the thin film without damaging the thermally fragile substrate.
- the photonic curing technique has the potential of alleviating the problem of thermally processing solder paste on thermally fragile substrates.
- solders can be heated in a time scale so short that the thermally fragile substrate may also be heated beyond its maximum working temperature. In practice, however, this does not solve the above-mentioned problem because photonic curing generally applies to the processing of thin films on comparatively thick substrates.
- a thin film on a thermally fragile substrate is heated very rapidly by pulsed light from a flashlamp to a temperature beyond what the thermally fragile substrate can ordinarily take without being damaged. After heating by the pulsed light, the thin film is rapidly cooled via thermal conduction by the thin film to the thermally fragile substrate. This is possible because the thermally fragile substrate is much thicker than the thin film and has greater thermal mass than that of the thin film.
- the combination of the greater thermal mass of the thermally fragile substrate and thermal conduction of the heat from the thin film to the thermally fragile substrate helps to prevent incurring damage to the thermally fragile substrate by minimizing the time spent at elevated temperature, even though the peak temperature is often higher than the published maximum working temperature of the thermally fragile substrate.
- the components as well as the solder paste are often thicker than the thermally fragile substrate.
- the amount of energy required to solder the components with a pulse of light would also warp the thermally fragile substrate in the process.
- the amount of radiant exposure needed to process the solder paste is between 3 and 30 J/cm 2 .
- This amount of energy is often higher than the damage threshold of most electrical traces that may be deposited on the thermally fragile substrate as they absorb some of the pulsed light from the flashlamp.
- the electrical traces can become hot and may ablate or locally warp the thermally fragile substrate underneath or adjacent to the electrical traces.
- the rapid heating releases volatiles in the solder paste that can causes cohesive failure on the solder paste. In other words, gas generation from the rapid heating explodes the solder paste and destroys any hope of making a good solder connection.
- the present invention provides an improved method for soldering electrical components onto a thermally fragile substrate.
- thermally fragile substrate 10 which is preferably optically transparent, can be PEN, PET, polycarbonate or paper.
- solder paste 16a-16d is then applied to locations corresponding to the locations of optically absorptive layer 12, as shown in Figure 1C.
- solder paste 16a is located above optically absorptive layer 12a
- solder paste 16b is located above optically absorptive layer 12b
- solder paste 16c is located above optically absorptive layer 12c
- solder paste 16d is located above optically absorptive layer 12d.
- solder paste 16a, 16b, and a component 18b has been placed on solder paste 16c, 16d the entire structure is irradiated from the bottom (non-component side) of thermally fragile substrate 10 with uniform pulsed light, as depicted in Figure ID.
- Optically reflective layer 11 reflects the pulsed light, while optically absorptive layer 12 absorbs the pulsed light and becomes heated. This heat is subsequently transferred to solder paste 16a-16d and components 18a, 18b via thermal conduction to heat solder paste 16a-16d, thereby melting solder paste 16a-16d.
- FIGS. 2A-2E there are illustrated a method for curing solder paste on a thermally fragile substrate using pulsed light, according to a second embodiment.
- an optically reflective layer 21 and an optically absorptive layer 22 are selectively printed on a thermally fragile substrate 20, as shown in Figure 2A.
- the locations of optically absorptive layer 22 should correspond to the future locations of solder paste to be utilized to connect to a component.
- Thermally fragile substrate 20, which is preferably optically transparent, can be PEN, PET, polycarbonate or paper.
- multiple conductive traces 25 are selectively deposited on optically reflective layer 21 and on optically absorptive layer 22, as depicted in Figure 2B.
- Solder paste 26a-26d is then applied to locations corresponding to the locations of optically absorptive layer 22, as shown in Figure 2C.
- a second optically reflective layer 23 is then deposited on the exposed (not covered by solder paste) conductive traces 25 and the exposed (not covered by solder paste) optically reflective layer 21, as depicted in Figure 2D.
- solder paste 26a, 26b, and a component 28b has been placed on solder paste 26c, 26d
- the entire structure is irradiated from the top and bottom with uniform pulsed light, as shown in Figure 2E.
- Optically reflective layers 21 and 23 reflect the pulsed light, while optically absorptive layer 22 absorbs the pulsed light and becomes heated. This heat is subsequently transferred to solder paste 26a-26d and components 28a, 28b via thermal conduction to heat solder paste 26a-26d, thereby melting solder paste 26a-26d.
- optically reflective layer 11 need not be selectively applied. It may simply be coated over substrate 10 and optically absorptive layer 12. When optically absorptive layer 12 is heated with pulsed light, the heat from optically absorptive layer 12 is transferred via conduction through optically reflective layer 11 to heat solder paste 15. This is possible on substrate 10 facing optically reflective layer 11 in the second embodiment shown in Figures 2A-2E as well.
- components 28A-28B serve as the absorbers on the top facing side of the stack to heat solder paste 26a-26d.
- the present invention provides an improved method for soldering electrical components onto a thermally fragile substrate by applying one or more printed masks to the thermally fragile substrate to allow selective absorption of pulsed light from a flashlamp, and thereby spatially tune the radiant exposure from the flashlamp to selectively heat the solder paste without causing damage to adjacent structures or the thermally fragile substrate.
- Components of different sizes and thicknesses can be attached to a thermally fragile substrate with the same pulsed light. The entire process can be performed in less than one second.
- the method of the present invention can be utilized to thermally cure a variety of materials such as electrically conductive epoxies, adhesives, or other materials.
- One advantage of the method of the present invention is that standard RoHS compatible solder can be used with a thermally fragile substrate. Another advantage of the method of the present invention is that no registration is required of the light curing source. Registration is provided by the printed masks.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Abstract
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2018/014501 WO2019143358A1 (fr) | 2018-01-19 | 2018-01-19 | Procédé de durcissement de pâte à souder sur un substrat thermiquement fragile |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3740340A1 true EP3740340A1 (fr) | 2020-11-25 |
EP3740340A4 EP3740340A4 (fr) | 2021-12-15 |
Family
ID=67301079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18901662.9A Pending EP3740340A4 (fr) | 2018-01-19 | 2018-01-19 | Procédé de durcissement de pâte à souder sur un substrat thermiquement fragile |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3740340A4 (fr) |
JP (1) | JP7118463B2 (fr) |
KR (1) | KR102405231B1 (fr) |
CN (1) | CN111902237B (fr) |
CA (1) | CA3088725A1 (fr) |
WO (1) | WO2019143358A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116110805B (zh) * | 2023-04-13 | 2023-07-11 | 深圳宏芯宇电子股份有限公司 | 芯片键合方法、结构及存储器 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3509317A (en) * | 1967-08-01 | 1970-04-28 | North American Rockwell | Indirect radiant heat soldering apparatus |
JPS5439909B2 (fr) * | 1973-11-09 | 1979-11-30 | ||
US5088189A (en) * | 1990-08-31 | 1992-02-18 | Federated Fry Metals | Electronic manufacturing process |
JPH05109824A (ja) * | 1991-10-15 | 1993-04-30 | Omron Corp | 電子部品のフリツプチツプ実装方法 |
JP3285294B2 (ja) * | 1995-08-08 | 2002-05-27 | 太陽誘電株式会社 | 回路モジュールの製造方法 |
JPH11243224A (ja) * | 1997-12-26 | 1999-09-07 | Canon Inc | 光起電力素子モジュール及びその製造方法並びに非接触処理方法 |
US8945686B2 (en) * | 2007-05-24 | 2015-02-03 | Ncc | Method for reducing thin films on low temperature substrates |
KR101453878B1 (ko) * | 2008-08-07 | 2014-10-23 | 삼성디스플레이 주식회사 | 평판 표시장치의 제조방법 |
WO2011153357A1 (fr) * | 2010-06-02 | 2011-12-08 | Ncc Nano, Llc | Procédé de traitement thermique latéral de films minces sur des substrats à basse température |
JP5536899B2 (ja) * | 2010-11-08 | 2014-07-02 | パナソニック株式会社 | はんだプリコート方法 |
JP2013098338A (ja) * | 2011-10-31 | 2013-05-20 | Nisshinbo Mechatronics Inc | 電子部品の製造装置、電子部品の製造方法、およびled照明の製造方法 |
KR102108939B1 (ko) * | 2012-04-18 | 2020-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 발전된 어닐링 프로세스에서 입자를 감소시키기 위한 장치 및 방법 |
JP6032637B2 (ja) * | 2012-07-05 | 2016-11-30 | パナソニックIpマネジメント株式会社 | 部品実装基板の製造システム及び製造方法 |
FR2994768B1 (fr) * | 2012-08-21 | 2016-02-05 | Commissariat Energie Atomique | Hybridation face contre face de deux composants microelectroniques a l'aide d'un recuit uv |
US20140369033A1 (en) * | 2013-06-12 | 2014-12-18 | Paul Palfreyman | Portable lighting systems incorporating deformable light sheets |
WO2016103800A1 (fr) * | 2014-12-24 | 2016-06-30 | ソニー株式会社 | Dispositif de démontage de composants, substrat, procédé de démontage de composants, dispositif de réparation de composants et substrat de montage de composants |
FR3034913B1 (fr) * | 2015-04-09 | 2017-05-05 | Commissariat Energie Atomique | Procede de decoupe d'un electrode d'un generateur electrochimique |
JP6726215B2 (ja) * | 2015-04-28 | 2020-07-22 | ネーデルランドセ・オルガニサティ・フォール・トゥーヘパスト−ナトゥールウェテンスハッペライク・オンデルズーク・テーエヌオー | フラッシュランプおよびマスクを使用して複数のチップをはんだ付けするための装置および方法 |
CN104985350B (zh) * | 2015-07-03 | 2017-03-29 | 北京康普锡威科技有限公司 | 一种Sn‑Bi/Cu无铅复合焊接材料 |
WO2017187769A1 (fr) * | 2016-04-26 | 2017-11-02 | Jsr株式会社 | Procédé de traitement de matériau de base et procédé de fabrication de dispositif à semi-conducteur |
-
2018
- 2018-01-19 KR KR1020207023356A patent/KR102405231B1/ko active IP Right Grant
- 2018-01-19 CN CN201880086970.4A patent/CN111902237B/zh active Active
- 2018-01-19 JP JP2020560860A patent/JP7118463B2/ja active Active
- 2018-01-19 WO PCT/US2018/014501 patent/WO2019143358A1/fr unknown
- 2018-01-19 CA CA3088725A patent/CA3088725A1/fr active Pending
- 2018-01-19 EP EP18901662.9A patent/EP3740340A4/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
KR102405231B1 (ko) | 2022-06-03 |
JP2021516451A (ja) | 2021-07-01 |
CN111902237B (zh) | 2022-04-26 |
EP3740340A4 (fr) | 2021-12-15 |
CA3088725A1 (fr) | 2019-07-25 |
WO2019143358A1 (fr) | 2019-07-25 |
CN111902237A (zh) | 2020-11-06 |
KR20200108340A (ko) | 2020-09-17 |
JP7118463B2 (ja) | 2022-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK169855B1 (da) | Kredsløbspakkeenhed og fremgangsmåde til fastgørelse af en kredsløbspakke på en bæregrundplade | |
US4012832A (en) | Method for non-destructive removal of semiconductor devices | |
CN100493299C (zh) | 用于装配和焊接电路板的方法、回流焊炉和用于该方法的电路板 | |
JP7186162B2 (ja) | チップを基板に接着するための方法およびシステム | |
US7156279B2 (en) | System and method for mounting electronic components onto flexible substrates | |
EP3289606A2 (fr) | Appareil et procédé de brasage d'une pluralité de puces avec une lampe-éclair et un masque | |
WO2006112217A1 (fr) | Systeme d'emballage | |
CN111491462A (zh) | 固晶结构及其制造方法 | |
US20210037661A1 (en) | Method for curing solder paste on a thermally fragile substrate | |
US6583385B1 (en) | Method for soldering surface mount components to a substrate using a laser | |
US7026582B2 (en) | Vector transient reflow of lead free solder for controlling substrate warpage | |
US6572009B2 (en) | Passive and active heat retention device for solder fountain rework | |
EP3740340A1 (fr) | Procédé de durcissement de pâte à souder sur un substrat thermiquement fragile | |
US3588425A (en) | Dual source radiation bonding of plural joints | |
JP2005142397A (ja) | ボンディング方法およびその装置 | |
EP0434135B1 (fr) | Procédé de mise en place et de soudage simultanés de composants SMD | |
US6897078B2 (en) | Programmable multi-chip module | |
US6857559B2 (en) | System and method of soldering electronic components to a heat sensitive flexible substrate with cooling for a vector transient reflow process | |
US20040134975A1 (en) | Composite pallet for a vector transient reflow process | |
Plotog et al. | Investigations on assembling of electronic packages onto glass substrates using lead-free technology | |
Pakazad et al. | Hybrid integration on low-cost flex foils using photonic flash soldiering | |
JP2008177520A (ja) | リフロー半田付け方法及びリフロー半田付け装置 | |
JP3823654B2 (ja) | 半導体装置の実装方法 | |
JPH04352491A (ja) | 電子部品の実装方法 | |
Plotog et al. | Pin-in-paste DFM constraints in vapor phase soldering technology for optoelectronic components |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20200717 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
RIC1 | Information provided on ipc code assigned before grant |
Ipc: B23K 1/005 20060101ALI20210804BHEP Ipc: H05K 3/32 20060101ALI20210804BHEP Ipc: H05K 3/34 20060101ALI20210804BHEP Ipc: H01L 23/14 20060101ALI20210804BHEP Ipc: H01L 23/498 20060101ALI20210804BHEP Ipc: H01L 21/60 20060101AFI20210804BHEP |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20211111 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: B23K 1/005 20060101ALI20211105BHEP Ipc: H05K 3/32 20060101ALI20211105BHEP Ipc: H05K 3/34 20060101ALI20211105BHEP Ipc: H01L 23/14 20060101ALI20211105BHEP Ipc: H01L 23/498 20060101ALI20211105BHEP Ipc: H01L 21/60 20060101AFI20211105BHEP |