EP3729485A1 - Procédé et dispositif pour générer un profil de surface à symétrie de rotation souhaité - Google Patents

Procédé et dispositif pour générer un profil de surface à symétrie de rotation souhaité

Info

Publication number
EP3729485A1
EP3729485A1 EP18826543.3A EP18826543A EP3729485A1 EP 3729485 A1 EP3729485 A1 EP 3729485A1 EP 18826543 A EP18826543 A EP 18826543A EP 3729485 A1 EP3729485 A1 EP 3729485A1
Authority
EP
European Patent Office
Prior art keywords
workpiece
tool
distance
axis
rotation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18826543.3A
Other languages
German (de)
English (en)
Inventor
Frank Frost
Andreas Nickel
Stephan GÖRSCH
Christian ALVERMANN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leibniz Institut fuer Oberflachenmodifizierung eV
Original Assignee
Leibniz Institut fuer Oberflachenmodifizierung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leibniz Institut fuer Oberflachenmodifizierung eV filed Critical Leibniz Institut fuer Oberflachenmodifizierung eV
Publication of EP3729485A1 publication Critical patent/EP3729485A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H01J2237/30461—Correction during exposure pre-calculated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas

Definitions

  • the present invention relates to a method for r producing a desired Oberflä chenprofils according to the preamble of claim 1 and an apparatus for producing a desired surface profile according to the preamble of claim 11.
  • Surface profiling is a common method of imparting a particular shape to a surface. In principle, this can be done by order or removal or combination of both.
  • the present invention is based on such contactless tools.
  • a mask 100, 100 ' may be formed on the surface 102, 102' such that a so-called "photoresist" 104, 104 'is deposited on the surface 102, 102' a (eg by spray or spin coating). Coating) and then by means of lithographic phic process 105, 105 ', a specific pattern 106, 106' in the photoresist 104,
  • the masks structure 106, 106 'produced thereby is then transferred into the surface 102, 102' by contactless tools 108, 108 '.
  • the pattern transfer is performed using, for example, a RI BE (Reactive Ion Beam Etching) process 108, 108 ', wherein in FIG. 8c the selectivity of the RI BE process 108 is greater than 1, whereby the generated surface structure 110 is formed over the mask structure 106 proportionally ühöhöht.
  • Selectivity is defined as the ratio of etch rates of the material to be patterned (here, the surface material 102) with respect to the mask material (here the photoresist 104).
  • the photoresist could be patterned by means of ithographic techniques, and this structure transferred to the metal layer via, for example, an ion beam process, where the ion beam process has different process parameters (eg, another process gas) than the process parameters of the actual ion beam process curling the surface. All this is familiar to the expert, so it need not be discussed further.
  • process parameters eg, another process gas
  • the selectivity is less than 1, so that the surface structure 110 'is made proportionally smaller than the mask structure 106'.
  • a planarizing layer 104 for example in the form of a photoresist 104 ", which has been applied by spray or spin coating, becomes a Mask 100 "with a completely flat and smooth mask structure 106" produced (see Fig. 10b), which then for example by a RI BE process 108 "into the surface 102" This results in a completely smooth and flat surface structure 110 "(see FIG. 10), but for this purpose it is necessary for the selectivity to be 1.
  • the method according to the invention for producing a desired rotationally symmetrical profile of a surface of at least one workpiece having a workpiece normal by transmitting a structure of a mask to the surface of the workpiece by means of a non-contact machining tool having a tool function and a tool longitudinal axis, where at Machining tool is rotated relative to the workpiece, characterized in that the distance between the workpiece normal and tool longitudinal axis is set to at least two u nterlorides. Both values or only one value can be different from 0 mm.
  • At least one workpiece in this context means that two or more workpieces can be processed simultaneously, so that a real batch processing is possible.
  • the inventive method can also be performed bel iebig often successively on a and demsel ben workpiece to obtain a specific desired rotationally symmetric cal surface profile.
  • the tool is in style 1 and the workpiece is about the workpiece normal
  • the workpiece is rotated about the workpiece normal, where the axis of rotation need not be identical to the workpiece normal, and the tool is rotated on a path opposite the workpiece.
  • Track includes not only circular paths, but also other tracks, such as elliptical tracks or other arbitrarily curved tracks.
  • On a train means that the train does not have to travel completely and / or not in one go, but is sufficient to at least partially move on that track.
  • rotating does not necessarily mean that there is a complete rotation. For example, a workpiece could be rotated continuously around the workpiece normal and at the same time the distance between the tool longitudinal axis and tool normal can be changed.
  • transfer does not only mean identical transfer, in which the mask structure predetermined by the mask is transferred 1: 1 into an identical structure of the sur face of the workpiece, but also a proportional, ie, form-retaining transfer, in which the Mask structure can be proportionally scaled, and a non-proportional transfer
  • a proportional, ie, form-retaining transfer in which the Mask structure can be proportionally scaled
  • “Mask” is any layer having a height profile along its surface and / or having different selectivities for the machining tool along its surface
  • the mask may either be applied directly to the surface of the workpiece or to the surface of the workpiece, In the case of a direct arrangement on the surface, a soft mask, eg of a photoresist, or a hard mask, eg of chromium, is preferably used, the structuring for example carried out by a lithographic process or a mechanical process, which is familiar to the person skilled in the art.
  • the mask may have any structure, wherein structure means not only the geometric structure along the surface, but the selectivity distribution along the surface.
  • structure means not only the geometric structure along the surface, but the selectivity distribution along the surface.
  • one-dimensional or two-dimensional structures such as line grids, point grids, lattices of crossed lines, binary lattices, and even arbitrary mask geometries arranged laterally over the surface, can be almost completely stochastic.
  • the "tool longitudinal axis" is at the center of the tool function, ie the center of gravity of the effect distribution of the tool function.
  • the position of the tool longitudinal axis on the workpiece surface is present at the point at which the center of the workpiece function intersects the surface of the workpiece.
  • the transfer can be done by applying material to the surface of the at least one workpiece and / or by transferring material from the surface of the at least one workpiece.
  • the inventive method and apparatus of the invention in the field of the production of diffractive and / or refractive optical refractive elements, such as Fresnel lenses, optical lenses, optical diffraction gratings, optical mirrors and the like., Especially in the Glättu ng of Surfaces such Elemen teeinsetzbar.
  • the tool function is rotationally symmetrical with respect to the tool longitudinal axis. Then the desired surface profile can be produced particularly easily with high precision.
  • a rotation of the tool function could be additionally provided around the tool longitudinal axis.
  • a rotationally symmetrical surface profile O is generated.
  • O bervidprofile can len by the inven tion proper rotation with Abstellverstell particularly easy with high precision len.
  • the machining tool is selected from the group comprising ion beam sources, plasma sources, electron beam sources, particle sources for layer deposition or sources of electromagnetic radiation.
  • the processing is particularly preferably carried out by dry etching using ions and / or free radicals. This can be done for example by plasma etching, Reactive Ion Etching (RI E) or Reactive Ion Beam Etching (RI BE), where at the used process gases from the structure to the material a hang.
  • RI BE has fundamental advantages over RI E in that there is better spatial separation of the workpiece from the plasma and increased etch anisotropy, which makes optical device structures, such as diffraction gratings and lattice prisms, easier to manufacture.
  • the workpiece normal is tilted relative to the tool longitudinal axis tilted.
  • three-dimensional surface profiles can be generated faster.
  • undercuts in the surface profile can be produced in relation to the workpiece normal.
  • curved surfaces can also be machined.
  • the tilting can also assume different values over the surface of the workpiece, whereby the tilting can be changed continuously or stepwise.
  • the change in distance takes place with active tool function. The tool is thus switched on and the surface profiling is effective during the change in distance. As a result, the processing time can be reduced.
  • a machining time of the machining tool is set for each distance.
  • the tool function is determined and distances and the processing times of the distances are determined by adjusting the tool function to the desired O ber lakeprofil.
  • a tilt angle of the workpiece normal relative to the tool longitudinal axis is determined. This tilting angle can be different in relation to the different distances and also change over time.
  • the tool function is modeled by mathematical functions from the group of polynomial functions, the trigonometric functions and the two-dimensional Gaussian functions and the two-dimensional error functions as well as the superposition of two or more of these functions.
  • the workpiece is arranged on a rotating around a rotation axis ble workpiece holder and the tool is moved to a radius with respect to the axis of rotation from a first distance to the axis of rotation to a second distance from the axis of rotation.
  • the method is structurally particularly easy to implement. Since the workpiece normal can coincide with the axis of rotation of the workpiece holder, this does not have to be the case.
  • Una pending protection is claimed for the inventive device for generating a desired rotationally symmetrical profile of a surface of at least one workpiece having a workpiece normal by Ü transmission of a structure of a mask on the O ber Structure of the workpiece by means of a non-contact processing tool that a tool function and has a tool longitudinal axis, where in the Device is arranged to rotate the machining tool relative to the workpiece, wherein the device is characterized in that the distance between workpiece normal and tool longitudinal axis is adjustable to at least two different values bar.
  • the device is configured to carry out the method according to the invention.
  • FIG. 1 shows the device according to the invention in a perspective Thomasan view
  • FIG. 2 shows the workpiece holder of the device according to the invention according to FIG. 1 in a plan view in a first preferred embodiment
  • FIG. 4 shows the workpiece holder of the device according to the invention according to FIG. 1 in a plan view in a second preferred embodiment, FIG.
  • Fig. 6 shows the relative Materiala btrag ü over the radial position for a first
  • Fig. 7 shows the relative Materiala btrag ü over the radial position for a second
  • the inventive device 10 and the workpiece holder 12 is shown in various views and configurations.
  • the device 10 has a vacuum chamber 13 with a housing 14 in which a lonenstrahlquel le 16 as a tool with a tool longitudinal axis WL and a workpiece holder 12 are arranged.
  • the vacuum chamber 13 has, as usual, means for evacuation in the form of pumps, means for supplying gas, and means for supplying power to the ion beam source 16, as well as related control techniques (not shown).
  • the workpiece holder 12 has an axis of rotation D about which the workpiece holder 12 can be rotated.
  • the lonenstrahlquel le 16 can be tilted with respect to the axis of rotation D by an angle a.
  • the distance A between the workpiece holder 12 and lonenstrahlquel le 16 can be changed for example by a telescopic element 17.
  • the workpiece holder 12 has a diameter of 500 mm.
  • five workpieces 19 in wafer form for example Si wafers, can be arranged side by side on this workpiece holder 12, where the workpieces 19 have a diameter of 100 mm. 1st embodiment
  • the lonenstrahlquel le 16 was arranged untilted so that their tool longitudinal axis WL was in line with the axis of rotation D of the workpiece holder 12.
  • the ion beam source 16 was of the Kaufman type operated with argon as a process gas and an ion energy of 800 eV.
  • the working distance A was 400 mm and the process pressure in the vacuum chamber was 4.0 * 10 5 m bar.
  • the half width of the tool function was determined as follows:
  • the workpiece holder 12 was rotated with the workpieces 19 at 5 revolutions per minute about the axis of rotation D for a period of 30 minutes, the ion source 16 being in the style.
  • Process pressure vacuum chamber 13 4.0 * 10 5 m bar
  • the wafers 19 in the graves 24 were etched, with the photoresist mask 20 preventing etching of the wafers 19 at the respective positions of the lands 22.
  • the measured ablations were used as input data for the determination of the tool function, in this case ie the ablation function.
  • the tool function has been adjusted by means of a nonlinear fit procedure by a superposition of 2-dimensional Gaussian and error functions to thereby assign parameters such as etch rates, standard deviations in x and y directions, plateau values, and the like determine.
  • Half width 192.40 mm
  • volumetric etching rate 0.40 mm 3 / m in
  • the tool function calculated in this way was integrated over circles with sufficiently many radii to obtain the mean and maximum deviation from the desired surface profiling. In this case, a homogeneous removal over the entire workpiece holder surface should be achieved.
  • the parameters of the two distances B1, B2 from the axis of rotation D and the processing times for the respective distances were determined with the aid of the circle integrals mentioned above, so that the desired overlap is achieved. It will be possible to obtain the exact dimensions.
  • the standards used were the L2 (least squares method) and the M in (Max (.)) Norm.
  • Second distance B2 260.55 mm
  • the inventive method was carried out with the device 10 according to the scheme of FIG. More specifically, the workpiece holder 12 has been rotated continuously about the rotation axis D and the ion source 16 has been arranged with its tool function 26 at a first distance Bl of the tool longitudinal axis WL with respect to the axis of rotation D ü over a first specific processing time and then at a second distance B2 Tool longitudinal axis WL with respect to the axis of rotation D ü arranged over a second specific processing time.
  • the arrangement at the second distance B2 and then the arrangement at the first distance Bl could also be performed first. Whether this arrangement is barter bar depends finally on the desired surface profile a b.
  • wafers 28 were identical to the wafers 19 provided with a lateral grid 21 in the form of webs 22 and grave 24 of a binary photoresist 20.
  • the ion beam source 16 had been deactivated.
  • the following etching parameters had been used: ion energy: 800 eV
  • the photoresist mask 20 was again wet-chemically removed and the surface profile measured by atomic force microscopy to thereby determine the etching depths at the locations of the trenches 24.
  • the lonenstrahlquel le 16 was arranged untilted so that their tool longitudinal axis WL was in line with the axis of rotation D of the workpiece holder 12.
  • the ion beam source 16 was again of the Kaufman type, operated with argon as the process gas and an ion energy of 800 eV.
  • the working distance A was 425 mm and the process pressure in the vacuum chamber was 4, 2 * 10 5 m bar.
  • the distance A had been increased in this case in order to increase the half width of the tool function of the ion source 16 in conjunction with an increased grating 2 voltage and an increased gas flow of the ion source 16.
  • the half-width of the tool function was determined as follows:
  • the workpiece holder 12 was rotated with the workpieces 18 at 5 revolutions per minute about the axis of rotation D for a time of 36.2 minutes, with the ion source 16 standing in the style.
  • Process pressure vacuum chamber 13 4.2 * 10 5 m bar
  • the parameters of the two distances B1, B2 from the axis of rotation D and the processing times for the respective distances were again determined with the aid of the circle integrals, so that the desired surface profile can be obtained exactly as far as possible.
  • the standards used were the L2 (least squares method) and the Min (Max (.)) Norms.
  • Second distance B2 400.00 mm
  • three wafers 28 were arranged on the workpiece holder 12 on the x-axis, analogously to FIG lay together. This covered a range of -50 mm to + 250 mm on the x-axis a. Again, because of the rotational symmetry, three wafers 28 were again sufficient.
  • wafers 18 were identical to the first embodiment with a binary grid in the form of webs 22 and grave ben 24 of a photoresist 20 has been provided. During the change of the distance B from the first distance Bl to the second distance B2, the ion beam source 16 had been deactivated.
  • etching parameters had been used: ion energy: 800 eV
  • Process pressure Vacuum chamber 13 4.4 * 10 5 m bar
  • the photoresist mask 20 was again wet-chemically removed and the surface profile measured by atomic force microscopy to thereby determine the etching depths at the locations of the trenches 24.
  • masks 20 with the aid of the method according to the invention and the device 10 according to the invention can basically be used to transfer any desired mask structures into the surfaces of workpieces 19.
  • a mask structure 202 was applied by means of a photoresist 204, where in the mask structure 202 is formed as a binary grid of square formed pak nkten 206 206 so that a pattern of points 206 and vertically crossing grave 208 sets.
  • This mask structure 202 had been produced in a conventional manner by means of a lithography process according to FIGS. 8a, 8b.
  • the mask structure 202 was subsequently transferred into the surface 210 of the Si wafer 200.
  • the tool function had previously been determined and the machining 212 was carried out with the tool function according to the first exemplary embodiment (see Section 1.2).
  • a lattice structure 214 with a homogeneous lattice depth H (R) could be achieved over the entire surface 210 of the Si wafer 200.
  • the grid depth H (R) formed rotationally symmetric and that with an exponential increase in the grid depth ü over the radius R of the Sl wafer 200th
  • RI BE processes instead of I BE processes, RI BE processes or other contactless structuring processes can also be used here.
  • the invention is not limited to the Ü bertagung of profiles of masks, which are applied directly on the O bercharacterization of the workpiece, but it can reason sylonl I also masks are used, the bea bsta nd of the surface of the work piece are arranged. With the help of Strukturü transmission can a
  • the present invention provides a surface profiling with contactless tools in which high precision with respect to transmission of a mask profile to generate a desired rotationally symmetric surface profile is enabled.
  • slight transfers can take place in the sense of identical transmission, proportional and non-proportional transmission. Since the process is relatively simple and the structure of the device is relatively simple. Turning points of a Fahrbewe movement are avoided and travel movements remain limited to short distances.
  • tool surfaces are machinable which, in at least one dimension, are substantially larger than the width of the tool function. Unless otherwise indicated, all features of the present invention may be freely combined with each other.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)

Abstract

La présente invention concerne un procédé et un dispositif (10) de génération d'un profil de surface souhaité sur une pièce par transfert de structures de masques. Le profilage de surface de l'invention permet une grande précision par rapport au profil de surface souhaité, par exemple une élimination homogène souhaitée. La gestion du processus est relativement facile et la structure du dispositif (10) est relativement simple. Les points d'inflexion d'un mouvement de déplacement sont évités et les mouvements de déplacement sont limités à de courtes distances. Enfin, il est possible d'usiner des surfaces d'outils qui sont sensiblement plus grande que la largeur de la fonction d'outil, au moins dans une dimension.
EP18826543.3A 2017-12-20 2018-12-12 Procédé et dispositif pour générer un profil de surface à symétrie de rotation souhaité Pending EP3729485A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017130797.4A DE102017130797B4 (de) 2017-12-20 2017-12-20 Verfahren zur Erzeugung eines gewünschten Oberflächenprofils
PCT/EP2018/084638 WO2019121268A1 (fr) 2017-12-20 2018-12-12 Procédé et dispositif pour générer un profil de surface à symétrie de rotation souhaité

Publications (1)

Publication Number Publication Date
EP3729485A1 true EP3729485A1 (fr) 2020-10-28

Family

ID=64900862

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18826543.3A Pending EP3729485A1 (fr) 2017-12-20 2018-12-12 Procédé et dispositif pour générer un profil de surface à symétrie de rotation souhaité

Country Status (3)

Country Link
EP (1) EP3729485A1 (fr)
DE (1) DE102017130797B4 (fr)
WO (1) WO2019121268A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021202502B4 (de) 2021-03-15 2023-01-19 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Verändern einer Form einer Oberfläche eines Objekts
DE102022208269A1 (de) 2022-08-09 2023-09-28 Carl Zeiss Smt Gmbh Vorrichtung zur Veränderung einer Form einer Oberfläche eines Objekts

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JP5480110B2 (ja) 2010-11-22 2014-04-23 株式会社日立ハイテクノロジーズ イオンミリング装置及びイオンミリング加工方法
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Publication number Publication date
WO2019121268A1 (fr) 2019-06-27
DE102017130797B4 (de) 2022-06-09
DE102017130797A1 (de) 2019-06-27

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