EP3681963A4 - Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen - Google Patents

Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen Download PDF

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Publication number
EP3681963A4
EP3681963A4 EP18856569.1A EP18856569A EP3681963A4 EP 3681963 A4 EP3681963 A4 EP 3681963A4 EP 18856569 A EP18856569 A EP 18856569A EP 3681963 A4 EP3681963 A4 EP 3681963A4
Authority
EP
European Patent Office
Prior art keywords
sin
tin
high selectivity
polishing applications
chemicomechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP18856569.1A
Other languages
English (en)
French (fr)
Other versions
EP3681963A2 (de
EP3681963B1 (de
Inventor
Chih-Hsien Chien
Yi-Hong Chiu
Hung-Tsung Huang
Ming-Chih Yeh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
CMC Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CMC Materials LLC filed Critical CMC Materials LLC
Priority to EP22170742.5A priority Critical patent/EP4056659B1/de
Publication of EP3681963A2 publication Critical patent/EP3681963A2/de
Publication of EP3681963A4 publication Critical patent/EP3681963A4/de
Application granted granted Critical
Publication of EP3681963B1 publication Critical patent/EP3681963B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP18856569.1A 2017-09-15 2018-08-13 Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen Active EP3681963B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP22170742.5A EP4056659B1 (de) 2017-09-15 2018-08-13 Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/706,192 US20190085205A1 (en) 2017-09-15 2017-09-15 NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
PCT/US2018/046429 WO2019055160A2 (en) 2017-09-15 2018-08-13 NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF CHEMICOMECHANICAL TIN-SIN POLISHING APPLICATIONS

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP22170742.5A Division EP4056659B1 (de) 2017-09-15 2018-08-13 Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen
EP22170742.5A Division-Into EP4056659B1 (de) 2017-09-15 2018-08-13 Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen

Publications (3)

Publication Number Publication Date
EP3681963A2 EP3681963A2 (de) 2020-07-22
EP3681963A4 true EP3681963A4 (de) 2021-11-03
EP3681963B1 EP3681963B1 (de) 2023-05-10

Family

ID=65719975

Family Applications (2)

Application Number Title Priority Date Filing Date
EP18856569.1A Active EP3681963B1 (de) 2017-09-15 2018-08-13 Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen
EP22170742.5A Active EP4056659B1 (de) 2017-09-15 2018-08-13 Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP22170742.5A Active EP4056659B1 (de) 2017-09-15 2018-08-13 Nitridinhibitoren für hohe selektivität von tin-sin-cmp-anwendungen

Country Status (7)

Country Link
US (2) US20190085205A1 (de)
EP (2) EP3681963B1 (de)
JP (1) JP7334148B2 (de)
KR (1) KR102691792B1 (de)
CN (1) CN111108161B (de)
TW (1) TWI687496B (de)
WO (1) WO2019055160A2 (de)

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JP7120846B2 (ja) * 2018-08-10 2022-08-17 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法
US20200332150A1 (en) * 2019-04-17 2020-10-22 Cabot Microelectronics Corporation Surface coated abrasive particles for tungsten buff applications
KR102367056B1 (ko) * 2020-02-27 2022-02-25 주식회사 케이씨텍 화학적 기계적 연마용 슬러리 조성물
CN115380097B (zh) * 2020-03-30 2024-06-14 福吉米株式会社 研磨用组合物
CN116134110A (zh) * 2020-07-28 2023-05-16 Cmc材料股份有限公司 包含阴离子型及阳离子型抑制剂的化学机械抛光组合物
US11680186B2 (en) * 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US12398293B2 (en) 2021-01-26 2025-08-26 Cmc Materials Llc Composition and method for polishing boron doped polysilicon
US12497540B2 (en) * 2021-09-30 2025-12-16 Fujimi Incorporated Polishing composition and polishing method using the same
KR20250069933A (ko) * 2022-09-22 2025-05-20 씨엠씨 머티리얼즈 엘엘씨 황 함유 음이온성 계면활성제를 포함하는 텅스텐 cmp 조성물
KR20240120911A (ko) * 2023-02-01 2024-08-08 주식회사 케이씨텍 텅스텐 연마용 슬러리 조성물
KR20240177123A (ko) * 2023-06-19 2024-12-27 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물 및 반도체 소자의 제조 방법
WO2025054089A1 (en) * 2023-09-05 2025-03-13 Entegris, Inc. Titanium oxide-based chemical-mechanical polishing composition for heavily-doped boron silicon films
KR102926383B1 (ko) * 2024-08-05 2026-02-11 주식회사 케이씨텍 실리콘 산화물 선택적 식각용 조성물

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US20110230048A1 (en) * 2010-03-16 2011-09-22 Yi Guo Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US20150221521A1 (en) * 2014-02-05 2015-08-06 Cabot Microelectronics Corporation Cmp method for suppression of titanium nitride and titanium/titanium nitride removal
US20160107289A1 (en) * 2014-10-21 2016-04-21 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods

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US20090081927A1 (en) * 2007-09-21 2009-03-26 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
US20110230048A1 (en) * 2010-03-16 2011-09-22 Yi Guo Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US20150221521A1 (en) * 2014-02-05 2015-08-06 Cabot Microelectronics Corporation Cmp method for suppression of titanium nitride and titanium/titanium nitride removal
US20160107289A1 (en) * 2014-10-21 2016-04-21 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods

Also Published As

Publication number Publication date
EP4056659A1 (de) 2022-09-14
KR102691792B1 (ko) 2024-08-02
JP2020534680A (ja) 2020-11-26
TWI687496B (zh) 2020-03-11
CN111108161B (zh) 2022-06-14
US12338369B2 (en) 2025-06-24
EP4056659B1 (de) 2024-04-03
EP3681963A2 (de) 2020-07-22
JP7334148B2 (ja) 2023-08-28
US20240199917A1 (en) 2024-06-20
US20190085205A1 (en) 2019-03-21
WO2019055160A2 (en) 2019-03-21
CN111108161A (zh) 2020-05-05
WO2019055160A3 (en) 2019-04-25
TW201920532A (zh) 2019-06-01
KR20200043488A (ko) 2020-04-27
EP3681963B1 (de) 2023-05-10

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