EP3656000A4 - PHOTOSENSITIVE ABSORPTION DEVICES ENHANCED BY MICROSTRUCTURES - Google Patents

PHOTOSENSITIVE ABSORPTION DEVICES ENHANCED BY MICROSTRUCTURES Download PDF

Info

Publication number
EP3656000A4
EP3656000A4 EP18835833.7A EP18835833A EP3656000A4 EP 3656000 A4 EP3656000 A4 EP 3656000A4 EP 18835833 A EP18835833 A EP 18835833A EP 3656000 A4 EP3656000 A4 EP 3656000A4
Authority
EP
European Patent Office
Prior art keywords
photosensitive devices
enhanced absorption
microstructure enhanced
absorption photosensitive
microstructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18835833.7A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3656000A2 (en
Inventor
Shih-Yuan Wang
Shih-Ping Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
W&wsens Devices Inc
Original Assignee
W&wsens Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by W&wsens Devices Inc filed Critical W&wsens Devices Inc
Publication of EP3656000A2 publication Critical patent/EP3656000A2/en
Publication of EP3656000A4 publication Critical patent/EP3656000A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
EP18835833.7A 2017-07-21 2018-07-23 PHOTOSENSITIVE ABSORPTION DEVICES ENHANCED BY MICROSTRUCTURES Pending EP3656000A4 (en)

Applications Claiming Priority (36)

Application Number Priority Date Filing Date Title
US201762535801P 2017-07-21 2017-07-21
US201762540524P 2017-08-02 2017-08-02
US201762542243P 2017-08-07 2017-08-07
US201762547728P 2017-08-18 2017-08-18
US201762553844P 2017-09-02 2017-09-02
US201762556426P 2017-09-10 2017-09-10
US201762561869P 2017-09-22 2017-09-22
US201762591072P 2017-11-27 2017-11-27
US201762599246P 2017-12-15 2017-12-15
US201762607860P 2017-12-19 2017-12-19
US201862615314P 2018-01-09 2018-01-09
US201862623971P 2018-01-30 2018-01-30
US201862628764P 2018-02-09 2018-02-09
US201862631630P 2018-02-17 2018-02-17
US201862633514P 2018-02-21 2018-02-21
US201862634692P 2018-02-23 2018-02-23
US201862637945P 2018-03-02 2018-03-02
US201862639356P 2018-03-06 2018-03-06
US201862639472P 2018-03-06 2018-03-06
US201862639920P 2018-03-07 2018-03-07
US201862640522P 2018-03-08 2018-03-08
US201862643010P 2018-03-14 2018-03-14
US201862645810P 2018-03-21 2018-03-21
US201862646871P 2018-03-22 2018-03-22
US201862651053P 2018-03-30 2018-03-30
US201862651087P 2018-03-31 2018-03-31
US201862652830P 2018-04-04 2018-04-04
US201862659072P 2018-04-17 2018-04-17
US201862659067P 2018-04-17 2018-04-17
US201862662217P 2018-04-24 2018-04-24
US201862666005P 2018-05-02 2018-05-02
US201862669194P 2018-05-09 2018-05-09
US201862675130P 2018-05-22 2018-05-22
US201862677609P 2018-05-29 2018-05-29
US201862682909P 2018-06-09 2018-06-09
PCT/US2018/043289 WO2019018846A2 (en) 2017-07-21 2018-07-23 PHOTOSENSITIVE ABSORPTION DEVICES ENHANCED BY MICROSTRUCTURES

Publications (2)

Publication Number Publication Date
EP3656000A2 EP3656000A2 (en) 2020-05-27
EP3656000A4 true EP3656000A4 (en) 2021-08-04

Family

ID=65015842

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18835833.7A Pending EP3656000A4 (en) 2017-07-21 2018-07-23 PHOTOSENSITIVE ABSORPTION DEVICES ENHANCED BY MICROSTRUCTURES

Country Status (4)

Country Link
EP (1) EP3656000A4 (zh)
JP (1) JP7429084B2 (zh)
CN (1) CN111133590B (zh)
WO (1) WO2019018846A2 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12087871B2 (en) 2013-05-22 2024-09-10 W&W Sens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US11791432B2 (en) 2013-05-22 2023-10-17 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US11309444B1 (en) 2015-11-20 2022-04-19 W&W Sens Devices, Inc. Microstructure enhanced absorption photosensitive devices
CN112582387A (zh) * 2019-08-01 2021-03-30 文和文森斯设备公司 微结构增强吸收光敏装置
JP7247822B2 (ja) * 2019-08-30 2023-03-29 株式会社豊田中央研究所 受光素子
US12094903B2 (en) 2019-09-24 2024-09-17 W&W Sens Devices, Inc Microstructure enhanced absorption photosensitive devices
US11508867B2 (en) 2020-01-28 2022-11-22 Adaps Photonics Inc. Single photon avalanche diode device
CN112117336B (zh) * 2020-09-22 2022-04-12 厦门大学 背照式结构的4H-SiC紫外光电探测器阵列及制备
CN112117337B (zh) * 2020-09-22 2022-10-14 厦门大学 具有刻蚀微孔结构的4H-SiC紫外光电探测器及制备
US11742451B2 (en) 2020-11-24 2023-08-29 Cisco Technology, Inc. Integrate stressor with Ge photodiode using a substrate removal process
CN113295275B (zh) * 2021-06-29 2024-05-14 传周半导体科技(上海)有限公司 一种特殊形状可调的片上光电探测器
CN115188842A (zh) * 2022-06-21 2022-10-14 广州诺尔光电科技有限公司 一种Si衬底上Ge雪崩光电二极管及其制造方法
KR102711235B1 (ko) * 2022-06-24 2024-09-27 주식회사 트루픽셀 단일 광자 검출 소자, 전자 장치, 및 라이다 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0940854A2 (en) * 1998-03-02 1999-09-08 International Business Machines Corporation Si/SiGe optoelectronic integrated circuits
WO2001003255A2 (en) * 1999-07-07 2001-01-11 Cielo Communications, Inc. A closely-spaced vcsel and photodetector for applications requiring their independent operation
US20050145779A1 (en) * 2003-11-13 2005-07-07 Seiko Epson Corporation Photodetectors, optical modules, and optical transmission devices
JP2007013065A (ja) * 2005-07-04 2007-01-18 Matsushita Electric Works Ltd 近赤外光検出素子
CN103956403B (zh) * 2014-04-03 2017-02-15 苏州北鹏光电科技有限公司 光电探测器制备方法及制备的广角光电探测器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525828A (en) * 1991-10-31 1996-06-11 International Business Machines Corporation High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields
JPH11274315A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd 半導体装置
US6785447B2 (en) * 1998-10-09 2004-08-31 Fujitsu Limited Single and multilayer waveguides and fabrication process
JP2002314116A (ja) * 2001-04-09 2002-10-25 Seiko Epson Corp Ｐｉｎ構造のラテラル型半導体受光素子
US6927382B2 (en) * 2002-05-22 2005-08-09 Agilent Technologies Optical excitation/detection device and method for making same using fluidic self-assembly techniques
JP2005259829A (ja) * 2004-03-10 2005-09-22 Sumitomo Electric Ind Ltd 裏面入射型受光素子アレイ
US8242436B2 (en) * 2010-11-30 2012-08-14 Sondex Limited Neutron porosity logging tool using microstructured neutron detectors
EP3000134B1 (en) * 2013-05-22 2021-03-10 Shih-Yuan Wang Microstructure enhanced absorption photosensitive devices
WO2017112747A1 (en) * 2015-12-21 2017-06-29 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US9755096B2 (en) * 2014-03-10 2017-09-05 Elenion Technologies, Llc Lateral Ge/Si avalanche photodetector
CN107078145B (zh) * 2014-11-18 2019-05-07 王士原 经微结构增强吸收的光敏器件
CN106328753A (zh) * 2016-08-26 2017-01-11 电子科技大学 基于MEMS微结构的红外增强Si‑PIN探测器及其制备方法
CN106206831A (zh) * 2016-08-26 2016-12-07 电子科技大学 基于飞秒激光烧蚀红外增强Si‑PIN探测器及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0940854A2 (en) * 1998-03-02 1999-09-08 International Business Machines Corporation Si/SiGe optoelectronic integrated circuits
WO2001003255A2 (en) * 1999-07-07 2001-01-11 Cielo Communications, Inc. A closely-spaced vcsel and photodetector for applications requiring their independent operation
US20050145779A1 (en) * 2003-11-13 2005-07-07 Seiko Epson Corporation Photodetectors, optical modules, and optical transmission devices
JP2007013065A (ja) * 2005-07-04 2007-01-18 Matsushita Electric Works Ltd 近赤外光検出素子
CN103956403B (zh) * 2014-04-03 2017-02-15 苏州北鹏光电科技有限公司 光电探测器制备方法及制备的广角光电探测器

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GAO YANG ET AL: "Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes", NATURE PHOTONICS, vol. 11, no. 5, 3 April 2017 (2017-04-03), UK, pages 301 - 308, XP055785220, ISSN: 1749-4885, Retrieved from the Internet <URL:http://www.nature.com/articles/nphoton.2017.37> DOI: 10.1038/nphoton.2017.37 *
LEVINE ET AL: "1 Gb/s Si high quantum efficiency monolithically integrable [lambda]=0.88 [mu]m detector", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 66, no. 22, 29 May 1995 (1995-05-29), pages 2984 - 2986, XP012012915, ISSN: 0003-6951, DOI: 10.1063/1.114251 *

Also Published As

Publication number Publication date
CN111133590B (zh) 2024-06-11
JP7429084B2 (ja) 2024-02-07
JP2020537816A (ja) 2020-12-24
CN111133590A (zh) 2020-05-08
WO2019018846A2 (en) 2019-01-24
WO2019018846A3 (en) 2019-03-28
EP3656000A2 (en) 2020-05-27

Similar Documents

Publication Publication Date Title
EP3656000A4 (en) PHOTOSENSITIVE ABSORPTION DEVICES ENHANCED BY MICROSTRUCTURES
EP3221895A4 (en) Microstructure enhanced absorption photosensitive devices
EP3632247A4 (en) MASK
EP3582878A4 (en) SORBENT DEVICES
EP3666133A4 (en) BEVERAGE MANUFACTURING DEVICE
EP3411906A4 (en) MICROSTRUCTURE IMPROVED LIGHT-SENSITIVE ADSORPTION DEVICES
EP3305114A4 (en) Mask
EP3000134A4 (en) Microstructure enhanced absorption photosensitive devices
EP3831232A4 (en) MASK
EP3633742A4 (en) ULTRAVIOLET LIGHT-EMITTING DEVICE
EP3603429A4 (en) MASK
EP3732715A4 (en) STRUCTURES WITH TWO ZERO-MISALIGNMENT INTERCONNECTION HOLES
EP3494314A4 (en) FIXING DEVICE
EP3699730A4 (en) DEVICE
EP3315850A4 (en) Daylighting device
EP3725876A4 (en) DEVICE
EP3372889A4 (en) NATURAL LIGHTING DEVICE
EP3403880A4 (en) Light device
EP3721850A4 (en) ASSISTANCE DEVICE
EP3620835A4 (en) CABLE RETAINER
EP4059055A4 (en) PHOTOSENSITIVE DEVICES WITH IMPROVED ABSORPTION BY MICROSTRUCTURES
EP3716404A4 (en) CONTRAPTION
EP3666132A4 (en) BEVERAGE MANUFACTURING DEVICE
EP3663604A4 (en) CONTROL ELEMENT
EP3666115A4 (en) FABRIC MASK

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20200116

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/0236 20060101AFI20210324BHEP

Ipc: H01L 31/105 20060101ALI20210324BHEP

Ipc: H01L 31/107 20060101ALI20210324BHEP

Ipc: H01L 31/0232 20140101ALI20210324BHEP

Ipc: H01L 27/144 20060101ALI20210324BHEP

Ipc: H01L 31/0216 20140101ALI20210324BHEP

Ipc: H01L 31/0224 20060101ALI20210324BHEP

Ipc: H01L 31/028 20060101ALI20210324BHEP

Ipc: H01L 31/0304 20060101ALI20210324BHEP

Ipc: H01L 31/0352 20060101ALI20210324BHEP

Ipc: H01L 31/108 20060101ALI20210324BHEP

Ipc: H01L 31/12 20060101ALI20210324BHEP

Ipc: H01L 31/18 20060101ALI20210324BHEP

Ipc: H01S 5/0234 20210101ALN20210324BHEP

Ipc: H01S 5/0237 20210101ALN20210324BHEP

Ipc: H01S 5/183 20060101ALN20210324BHEP

RAP3 Party data changed (applicant data changed or rights of an application transferred)

Owner name: W&WSENS DEVICES, INC.

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/0236 20060101AFI20210624BHEP

Ipc: H01L 31/105 20060101ALI20210624BHEP

Ipc: H01L 31/107 20060101ALI20210624BHEP

Ipc: H01L 31/0232 20140101ALI20210624BHEP

Ipc: H01L 27/144 20060101ALI20210624BHEP

Ipc: H01L 31/0216 20140101ALI20210624BHEP

Ipc: H01L 31/0224 20060101ALI20210624BHEP

Ipc: H01L 31/028 20060101ALI20210624BHEP

Ipc: H01L 31/0304 20060101ALI20210624BHEP

Ipc: H01L 31/0352 20060101ALI20210624BHEP

Ipc: H01L 31/108 20060101ALI20210624BHEP

Ipc: H01L 31/12 20060101ALI20210624BHEP

Ipc: H01L 31/18 20060101ALI20210624BHEP

Ipc: H01S 5/0234 20210101ALN20210624BHEP

Ipc: H01S 5/0237 20210101ALN20210624BHEP

Ipc: H01S 5/183 20060101ALN20210624BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20210701