EP4059055A4 - Microstructure enhanced absorption photosensitive devices - Google Patents

Microstructure enhanced absorption photosensitive devices Download PDF

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Publication number
EP4059055A4
EP4059055A4 EP20868204.7A EP20868204A EP4059055A4 EP 4059055 A4 EP4059055 A4 EP 4059055A4 EP 20868204 A EP20868204 A EP 20868204A EP 4059055 A4 EP4059055 A4 EP 4059055A4
Authority
EP
European Patent Office
Prior art keywords
photosensitive devices
enhanced absorption
microstructure enhanced
absorption photosensitive
microstructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20868204.7A
Other languages
German (de)
French (fr)
Other versions
EP4059055A1 (en
Inventor
Shih-Yuan Wang
Shih-Ping Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
W&wsens Devices Inc
Original Assignee
W&wsens Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by W&wsens Devices Inc filed Critical W&wsens Devices Inc
Publication of EP4059055A1 publication Critical patent/EP4059055A1/en
Publication of EP4059055A4 publication Critical patent/EP4059055A4/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
EP20868204.7A 2019-09-24 2020-09-21 Microstructure enhanced absorption photosensitive devices Pending EP4059055A4 (en)

Applications Claiming Priority (35)

Application Number Priority Date Filing Date Title
US201962905065P 2019-09-24 2019-09-24
US201962914028P 2019-10-11 2019-10-11
US201962925183P 2019-10-23 2019-10-23
US201962937813P 2019-11-20 2019-11-20
US201962943146P 2019-12-03 2019-12-03
US201962950888P 2019-12-19 2019-12-19
US202062957779P 2020-01-06 2020-01-06
US202062964094P 2020-01-21 2020-01-21
US202062968093P 2020-01-30 2020-01-30
US202062969624P 2020-02-03 2020-02-03
US202062975726P 2020-02-12 2020-02-12
US202062978736P 2020-02-19 2020-02-19
US202062981979P 2020-02-26 2020-02-26
US202062985171P 2020-03-04 2020-03-04
US202062993414P 2020-03-23 2020-03-23
US202062994758P 2020-03-25 2020-03-25
US202063005152P 2020-04-03 2020-04-03
US202063009928P 2020-04-14 2020-04-14
US202063011217P 2020-04-16 2020-04-16
US202063016160P 2020-04-27 2020-04-27
US202063019208P 2020-05-01 2020-05-01
US202063026591P 2020-05-18 2020-05-18
US202063033153P 2020-06-01 2020-06-01
US202063034961P 2020-06-04 2020-06-04
US202063034964P 2020-06-04 2020-06-04
US202063038079P 2020-06-11 2020-06-11
US202063039945P 2020-06-16 2020-06-16
US202063039941P 2020-06-16 2020-06-16
US202063041997P 2020-06-21 2020-06-21
US202063043709P 2020-06-24 2020-06-24
US202063048641P 2020-07-06 2020-07-06
US202063050044P 2020-07-09 2020-07-09
US202063051896P 2020-07-15 2020-07-15
US202063054192P 2020-07-20 2020-07-20
PCT/US2020/051733 WO2021061543A1 (en) 2019-09-24 2020-09-21 Microstructure enhanced absorption photosensitive devices

Publications (2)

Publication Number Publication Date
EP4059055A1 EP4059055A1 (en) 2022-09-21
EP4059055A4 true EP4059055A4 (en) 2023-12-27

Family

ID=75166362

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20868204.7A Pending EP4059055A4 (en) 2019-09-24 2020-09-21 Microstructure enhanced absorption photosensitive devices

Country Status (2)

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EP (1) EP4059055A4 (en)
WO (1) WO2021061543A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113257957B (en) * 2021-06-11 2022-08-23 四川蜀旺新能源股份有限公司 Super-doped silicon thin-film solar cell and manufacturing method thereof
CN114445364B (en) * 2022-01-25 2024-05-07 中南大学 Fundus image microaneurysm region detection method and imaging method thereof
CN115805375B (en) * 2022-11-22 2024-07-30 厦门大学 Pressure sensor with interlocking integrated microstructure and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017112747A1 (en) * 2015-12-21 2017-06-29 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
KR20180077393A (en) * 2016-12-28 2018-07-09 삼성전자주식회사 Light sensor
CN109659377A (en) * 2018-12-13 2019-04-19 深圳市灵明光子科技有限公司 Single-photon avalanche diode and production method, detector array, imaging sensor
EP3772104A1 (en) * 2019-08-01 2021-02-03 W&SSENS Devices, Inc. Microstructure enhanced absorption photosensitive devices

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
US20110156195A1 (en) * 2009-12-31 2011-06-30 Tivarus Cristian A Interwafer interconnects for stacked CMOS image sensors
US8735791B2 (en) * 2010-07-13 2014-05-27 Svv Technology Innovations, Inc. Light harvesting system employing microstructures for efficient light trapping
FR2969384A1 (en) * 2010-12-21 2012-06-22 St Microelectronics Sa IMAGE SENSOR WITH REDUCED INTERMODULATION
US10446700B2 (en) * 2013-05-22 2019-10-15 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
WO2017024121A1 (en) * 2015-08-04 2017-02-09 Artilux Corporation Germanium-silicon light sensing apparatus
US11153514B2 (en) * 2017-11-30 2021-10-19 Brillnics Singapore Pte. Ltd. Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017112747A1 (en) * 2015-12-21 2017-06-29 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
KR20180077393A (en) * 2016-12-28 2018-07-09 삼성전자주식회사 Light sensor
CN109659377A (en) * 2018-12-13 2019-04-19 深圳市灵明光子科技有限公司 Single-photon avalanche diode and production method, detector array, imaging sensor
EP3772104A1 (en) * 2019-08-01 2021-02-03 W&SSENS Devices, Inc. Microstructure enhanced absorption photosensitive devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2021061543A1 *

Also Published As

Publication number Publication date
EP4059055A1 (en) 2022-09-21
WO2021061543A1 (en) 2021-04-01

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