Classifications

• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
  • G06V10/00—Arrangements for image or video recognition or understanding
  • G06V10/10—Image acquisition
  • G06V10/17—Image acquisition using hand-held instruments
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
  • G03B11/00—Filters or other obturators specially adapted for photographic purposes
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
  • G03B30/00—Camera modules comprising integrated lens units and imaging units, specially adapted for being embedded in other devices, e.g. mobile phones or vehicles
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
  • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F3/0412—Digitisers structurally integrated in a display
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
  • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
  • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
  • G06F3/0428—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by sensing at the edges of the touch surface the interruption of optical paths, e.g. an illumination plane, parallel to the touch surface which may be virtual
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
  • G06V10/00—Arrangements for image or video recognition or understanding
  • G06V10/10—Image acquisition
  • G06V10/12—Details of acquisition arrangements; Constructional details thereof
  • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
  • G06V10/147—Details of sensors, e.g. sensor lenses
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
  • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
  • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
  • G06V40/12—Fingerprints or palmprints
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
  • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
  • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
  • G06V40/12—Fingerprints or palmprints
  • G06V40/13—Sensors therefor
  • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
  • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
  • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
  • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
  • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
  • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
  • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14601—Structural or functional details thereof
  • H01L27/14625—Optical elements or arrangements associated with the device
  • H01L27/14627—Microlenses
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14678—Contact-type imagers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
  • H10K39/30—Devices controlled by radiation
  • H10K39/32—Organic image sensors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/12—Active-matrix OLED [AMOLED] displays
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/40—OLEDs integrated with touch screens
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
  • H10K59/65—OLEDs integrated with inorganic image sensors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
  • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
  • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
  • G09G2300/00—Aspects of the constitution of display devices
  • G09G2300/02—Composition of display devices
  • G09G2300/023—Display panel composed of stacked panels
• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
  • G09G2360/00—Aspects of the architecture of display systems
  • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
  • G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light

Definitions

• the present application relates to an image acquisition system.
• An image acquisition system generally comprises an image sensor and an optical system interposed between the sensitive part of the image sensor and the object to be imaged and which makes it possible to form a clear image of the object to be imaged. on the sensitive part of the image sensor.
• An object of an embodiment is to increase the sharpness of the image acquired by the image sensor of an image acquisition system in the absence of an optical system forming a clear image of the object. to image on the sensitive part of the image sensor.
• Another object of an embodiment is that the surface of the sensitive portion of the image sensor is greater than one square centimeter.
• Another object of an embodiment is that the distance between the object to be imaged and the sensitive portion of the image sensor is less than one centimeter.
• Another object of an embodiment is that the distance between the object to be imaged and the sensitive part of the image sensor is greater than fifty micrometers.
• an image acquisition system comprising:
• an image sensor comprising a matrix of photodetectors adapted to detect said radiation and comprising a face
• an angular filter covering the image sensor, and adapted to block the radii of said radiation whose incidence relative to a direction orthogonal to the face is greater than a threshold and to let radii of said radiation whose incidence relative to a direction orthogonal to the face is below the threshold.
• the system further comprises a coating, at least partially transparent to said radiation and covering the image sensor, the angular filter being interposed between the coating and the image sensor.
• the source is adapted to emit said radiation into the coating from the periphery of the coating, the coating acting as a waveguide for said radiation.
• the radiation is in the visible range and / or in the infrared range.
• the angular filter comprises a matrix of holes delimited by walls opaque to said radiation or a polarizing material, the holes being filled with air or a material at least partially transparent to said radiation.
• the ratio between the height of the hole, measured perpendicular to the face, and the width of the hole, measured parallel to the face varies from 1 to 10.
• the holes are arranged in rows and columns, the pitch between adjacent holes of the same row or the same column ranging from 10 ⁇ m to 30 ⁇ m.
• the height of each hole measured in a direction orthogonal to the face, varies from 1 ⁇ m to 1 mm.
• the width of each hole, measured parallel to the face varies from 5 ⁇ m to 30 ⁇ m.
• the walls are entirely of a material opaque to said radiation.
• each wall comprises a core of a material transparent to said radiation covered with a layer opaque to said radiation.
• the system further comprises lenses covering the holes.
• the system comprises, for each hole, a lens covering the hole and in contact with the walls.
• the photodetectors comprise organic photodiodes.
• One embodiment provides a display system comprising the image acquisition system as defined above and further comprising a display screen, the angular filter being interposed between the display screen and the sensor. images.
• the display screen comprises a matrix of electroluminescent components and the photodetectors are offset relative to the electroluminescent components in a direction perpendicular to the face.
• the electroluminescent components are separated from each other by intermediate zones and the photodetectors are located in the extension of said intermediate zones in a direction perpendicular to said face.
• the display screen comprises a matrix of electroluminescent components, the electroluminescent components are at least partly transparent to the radiation and the electroluminescent components are located at least partly opposite the photodetectors in a direction perpendicular to said face.
• the electroluminescent components comprise organic light emitting diodes.
• One embodiment also provides for the use of the display system as defined above for the detection of at least one fingerprint of a user.
• An embodiment also provides a method of manufacturing an image acquisition system, comprising the steps of:
• an image sensor comprising an array of photodetectors adapted to detect said radiation and comprising a face; and forming an angular filter, covering the image sensor, and adapted to block the radii of said radiation whose incidence relative to a direction orthogonal to the face is greater than a threshold and to let radiation of said radiation of which 1 ' incidence relative to a direction orthogonal to the face is below the threshold.
• the angular filter comprises a matrix of holes delimited by walls opaque to said radiation, the formation of the angular filter comprising the following steps:
• the photosensitive resin is a black or colored resin.
• the angular filter comprises a matrix of holes delimited by walls opaque to said radiation, the formation of the angular filter comprising the following steps:
• the angular filter comprises a matrix of holes delimited by walls opaque to said radiation, each wall comprising a core made of a material transparent to said radiation covered with a layer opaque to said radiation, the formation of the angular filter comprising the steps following:
• the formation of the angular filter comprises the perforation of micrometric sized holes in a black or colored film.
• the holes are pierced by means of needles of micrometric size.
• Figures 1 and 2 are sectional, partial and schematic views of embodiments of an image acquisition system
• Fig. 3 is a sectional view of an embodiment of an image sensor of the image acquisition system of Fig. 2;
• FIG. 4 is a sectional view, partial and schematic, of another embodiment of an image acquisition system
• Figures 5 and 6 are sectional views similar to Figure 4 illustrating the operation of the image acquisition system of Figure 4 used as a fingerprint sensor;
• Figure 7 is a top view, partial and schematic, of an embodiment of a display system comprising a display screen and an image sensor;
• FIGS. 8A and 8B are respectively a partial and schematic top view and sectional view of an embodiment of a display system comprising a display screen and an image sensor;
• FIG. 9 is a top view, partial and schematic, of another embodiment of a system display comprising a display screen and an image sensor;
• Figures 10 and 11 are respectively a sectional view and a top view, partial and schematic, of an embodiment of an angular filter.
• Figures 12 to 17 are sectional views, partial and schematic, other embodiments of an angular filter
• Fig. 18 is a top view, partial and schematic, of another embodiment of a display system comprising a display screen and an image sensor;
• Fig. 19 is a top view, partial and schematic, of a more detailed embodiment of the image sensor of the display system of Fig. 18;
• Figures 20 to 22 are sectional, partial and schematic views of embodiments of a display system including a display screen and an image sensor.
• visible light is called electromagnetic radiation whose wavelength is between 400 nm and 700 nm and is called infrared radiation electromagnetic radiation whose wavelength is between 700 nm and 1 mm. .
• infrared radiation there is particular near infrared radiation whose wavelength is between 700 nm and 1.4 .mu.m.
• a pixel of an image corresponds to the unitary element of the image displayed by a display screen.
• the display screen is a color image display screen, it generally comprises for the display of each pixel of the image at least three components of emission and / or regulation of the light intensity , also called sub-display pixels, which each emit light radiation substantially in a single color (e.g., red, green and blue).
• the superposition of the radiation emitted by these three sub-display pixels provides the observer with the color sensation corresponding to the pixel of the displayed image.
• the display pixel of the display screen is the set formed by the three display subpixels used for displaying a pixel of an image.
• FIG. 1 is a partial schematic sectional view of an embodiment of an image acquisition system 10 of an object 12, partially shown in FIG. 1.
• the image acquisition system 10 comprises from bottom to top in FIG.
• an image sensor 14 having an upper face 15; an angular filter 16; and
• the image acquisition system 10 further comprises unrepresented means for processing the signals provided by the image sensor 14, comprising for example a microprocessor.
• FIG. 2 is a partial schematic cross-sectional view of another embodiment of an image acquisition system 25 of the object 12.
• the image acquisition system 25 comprises the entire elements of the image acquisition system 10 and further comprises a coating 18 having opposite top and bottom faces 20, 21 overlying the angle filter 16 on the opposite side of the image sensor 14.
• FIG. 3 is a sectional view of an embodiment of the image sensor 14.
• the image sensor 14 comprises a support 24 and a matrix 26 of photon sensors 28, also called photodetectors, arranged between the support 24 and the angular filter 16.
• the photodetectors 28 may be covered with a transparent protective coating, not shown.
• the image sensor 14 further comprises conductive tracks and switching elements, in particular transistors, not shown, for selecting the photodetectors 28.
• the photodetectors 28 may be made of organic materials.
• the photodetectors 28 may correspond to organic photodiodes (OPDs) or to organic photoresistances.
• OPDs organic photodiodes
• the surface of the image sensor 14 facing the angular filter 16 and containing the photodetectors 28 is greater than 1 cm 2, preferably greater than 1 cm 2 5 cm 2, more preferably greater than 10 cm 2, in particular greater than 20 cm 2.
• the face 15 may be substantially planar.
• the coating 18 is at least partially transparent to the radiation emitted by the light source 22.
• the coating 18 may have a thickness of 1 ⁇ m and 10 mm.
• the upper face 20 and the lower face 21 may be substantially flat.
• the angular filter 16 is adapted to filter the incident radiation as a function of the incidence of the radiation with respect to the upper face 20 of the angular filter 16, in particular so that each photodetector 28 receives only the rays whose incidence relative to an axis perpendicular to the upper face 20 of the angular filter 16 is less than a maximum angle of incidence less than 45 °, preferably less than 30 °, more preferably less than 20 °, even more preferably less than 10 °.
• the angular filter 16 is adapted to block the rays of incident radiation whose incidence relative to an axis perpendicular to the upper face 20 of the angular filter 16 is greater than the maximum angle of incidence.
• the object 12 whose image is acquired by the image sensor 14 is interposed between the light source 22 and the angular filter 16 or the coating 18.
• the image is obtained by transmitting the radiation emitted by the light source 22 through the object 12.
• the radiation emitted by the source 22 may be visible radiation and / or infrared radiation.
• the object 12 corresponds to the finger of a user.
• the finger 12 is in contact with the upper face 20 of the image acquisition system 10 so that the light rays passing through contact zones 30 between the object 12 and the face 20 are strongly transmitted while the light rays passing through non-contact areas 32, also called valleys, are more weakly transmitted.
• the photodetectors 28 situated opposite the contact zones 30 collect the scattered light at low incidence while the photodetectors 28 located opposite non-contact areas 32 collect little light since it is essentially blocked by the angular filter 16.
• FIG. 4 is a partial schematic sectional view of another embodiment of an image acquisition system 40.
• the image acquisition system 40 comprises all the elements of the image acquisition system 40.
• image acquisition 25 shown in Figure 2 with the difference that the light source 22 is replaced by a light source 42 adapted to emit light radiation 44 in the coating 18 which then acts as a waveguide.
• the radiation 44 emitted by the source 42 may be visible radiation and / or infrared radiation.
• the radiation 44 is injected into the coating 18 from the periphery of the coating 18. In the embodiment shown in FIG. 4, the radiation 44 is injected into the coating 18 from a lateral edge 46 of the coating 18.
• the radiation 44 is injected into the coating 18 at the periphery of the coating 18 by the upper face 20 or the lower face 21, preferably by the lower face 21.
• the coating 18 preferably has a thickness between 0.1 mm and 1 mm.
• the coating 18 may be glass, or a plastic material.
• the beam 44 emitted by the source 42 and propagating in the coating 18 may not be collimated. According to one embodiment, the beam 44 emitted by the source 42 and propagating in the coating 18 is substantially collimated, the radii of the beam 44 being substantially parallel to the faces 20, 21 of the coating 18. This may make it possible to improve the homogeneity of the image of the contact zones 30 acquired by the image sensor 14.
• Figures 5 and 6 illustrate the operation of the image acquisition system 40 as a fingerprint sensor.
• the radiation that propagates in the coating 18 is diffused at the level of contact zones 30 between the object 12 and the upper face 20 so that the photodetectors 28 of the image sensor 14 facing the contact zones receive the scattered radiation filtered by the angular filter 16.
• the radiation propagating in the coating 18 remains confined in the coating 18 at the valleys 32 so that the photodetectors 28 of the image sensor 14 facing the valleys 32 receive may or no radiation.
• Another example of application of the image acquisition system 10 or 40 relates to the image acquisition of a biological material through a transparent support in which is placed the biological material, for example a biological culture placed in a petri dish.
• FIG. 7 is a sectional, partial and schematic view of an embodiment of a display system 50.
• the display system 50 comprises all the elements of the image acquisition system 40 shown in FIG. 4 and furthermore comprises a display screen 52 interposed between the coating 18 and the angular filter 16.
• the matrix electroluminescent components 56 is disposed in a plane parallel to the matrix of photodetectors 28.
• the matrix of photodetectors 28 and the matrix of electroluminescent components 56 are superimposed with the interposition of the angular filter 16.
• FIGS. 8A and 8B are respectively a partial and schematic top view and sectional view of a more detailed embodiment of the display system 50.
• Figure 9 is a top view, partial and schematic, of another embodiment of a display system comprising a display screen and an image sensor.
• the image sensor 14 rests on a support 53.
• the display screen 52 includes a first support 53 and a display subpixel matrix 54 on the support 53.
• the display screen 52 includes an array of display subpixels 54, shown only in FIG. 8A and 9.
• Each display subpixel 54 comprises an optoelectronic component 56 adapted to emit electromagnetic radiation, referred to as an electroluminescent component in the following description.
• Each electroluminescent component 56 corresponds for example to a light-emitting diode, in particular to an organic light-emitting diode (OLED).
• the display subpixels 54 may further comprise conductive tracks and switching elements, in particular transistors, not shown, for selecting the sub-display pixels.
• the image sensor 14 comprises a second support 57 and a matrix of photon sensors, or photodetectors 28, arranged between the support 57 and the support 53.
• the angular filter 16, not shown in FIG. 8B, is interposed between the image sensor. 14 and the display screen 52.
• the photodetectors 26 may be covered with a transparent protective coating, not shown.
• the image sensor 14 further comprises conductive tracks and switching elements, in particular transistors, not shown, for selecting the photodetectors 28.
• each display subpixel 54 is shown square-shaped and each light-emitting component 56 corresponds to a stack of layers having a substantially square shape.
• shape of the display subpixel 54 and the shape of the electroluminescent component 56 may be different, for example polygonal.
• the area occupied by electroluminescent component 56 is smaller than the area of sub-display pixel 54 and each display sub-pixel 54 includes an intermediate zone 58 surrounding at least in part the electroluminescent component 56.
• the angular filter 16 is not shown.
• the display system 50 further comprises means (not shown) for processing the signals supplied by the sensor. of images 14, comprising for example a microprocessor, and means not shown for controlling the display screen 52.
• the matrix of electroluminescent components 56 is disposed in a plane parallel to the matrix of photodetectors 28.
• the photodetector matrix 28 and the array of electroluminescent components 56 are superimposed with the interposition of the angular filter 16.
• the electroluminescent components 56 can be provided a slight shift between the positions of the electroluminescent components 56 and the photodetectors 28 so that, in top view, the electroluminescent components 56 are not wholly or partly facing the photodetectors 28 , in order not to mask the photodetectors 28.
• This embodiment is suitable in the case where the electroluminescent components 56 are not transparent for the radiation detected by the image sensor 14 and that the intermediate zones 58 surrounding the electroluminescent components 56 leave less partially pass visible light and / or infrared light with a transmittance greater than 5%.
• the photodetectors 28 are located, in top view, between the electroluminescent components 56 of adjacent pixels.
• each photodetector 28 extends, in top view, along the common edge between two adjacent display sub pixels 54. In the arrangement shown in FIG. 9, each photodetector 28 is located, in top view, at the common corner between four adjacent display subpixels 54.
• the entire display screen 52 may have a low transmittance in the visible range. This can be the case when the display screen
• the radiation 44 emitted by the source 42 may then be in a range of frequencies outside the visible range for which the display screen 52 is at least partially transparent, for example in the infrared.
• the electroluminescent components 56 are at least partly transparent to the radiation captured by the photodetectors 28, the electroluminescent components 56 may be located, in plan view, partially or totally opposite the photodetectors 28.
• the radiation detected by the image sensor 14 is that supplied by the source 42 and may be in a range of wavelengths different from the radiation emitted by the display screen. 52.
• the source 42 is not present.
• the radiation detected by the image sensor may correspond to the radiation emitted by the electroluminescent components 56 of the display screen 52 or by some of them.
• the display screen 52 can emit radiation that is reflected on the object 12, the reflected radiation being angularly filtered by the angular filter 16 and detected by the sensor
• the pitch between photodetectors 28 of the same row or the same column corresponds substantially to the pitch of the display subpixels 54 and is greater than 200 dpi, preferably between 250 dpi and 2000 dpi, more preferably between 300 dpi and 2000 dpi.
• each photodetector 28 is adapted to detect electromagnetic radiation in a wavelength range of between 400 nm and 1100 nm.
• the photodetectors 28 may be adapted to detect electromagnetic radiation in the same wavelength range.
• the photodetectors 28 may be adapted to detect electromagnetic radiation in different wavelength ranges.
• the image sensor 14 is used to detect an actuator, not shown, for example a finger or a stylet, located on the protective layer 18.
• the image of the organ is used. actuator seen by the photodetectors 28.
• the image of the actuating member is formed in particular by the reflection, on the actuating member, of the light radiation emitted by the subpixels d. display 54, in particular the display subpixels 54 which are covered by the actuator.
• the image of the actuating member is obtained from the detection of another electromagnetic radiation than the radiation emitted by the sub-display pixels 54, in particular from the detection infrared radiation.
• the image sensor 14 can be used to detect the fingerprint of at least one finger of a user.
• the image sensor 14 can be used to simultaneously detect the fingerprints of several fingers of the user.
• the image sensor 14 can play the role of a tactile surface, the display system 50 can then be used as an interactive user interface controllable by simply sliding the finger or hand on the touch surface .
• Such interactive user interface can be used in particular to control mobile phones, computers, television sets, motor vehicles, ticket machines, industrial equipment, medical equipment, etc.
• each electroluminescent component 56 may comprise a stack of layers, comprising in particular, between two electrodes, a hole transport layer (HTL), an emission layer (EML) and an electron transport layer. (ETL).
• HTL hole transport layer
• EML emission layer
• ETL electron transport layer
• Figures 10 and 11 are respectively a sectional view and a top view, partial and schematic, of an embodiment of the angular filter 16.
• the angular filter 16 comprises a support 60 and walls 62 resting on the support 60 and delimiting holes 64.
• the height of the walls 64 measured from the support 60 is called "h".
• the support 60 is in a material at least partially transparent to the radiation captured by the photodetectors 28.
• the walls 62 are opaque to the radiation detected by the photodetectors 28, for example absorbent and / or reflective with respect to the radiation detected by the photodetectors 28.
• the walls 62 are absorbent in the visible and / or the near infrared and / or the infrared.
• the holes 64 are shown with a square cross section.
• the cross section of the holes 64 in the top view may be circular, oval or polygonal, for example triangular, square or rectangular.
• the holes 64 are arranged in rows and columns.
• the holes 64 may have substantially the same dimensions.
• We call “w” the width of a hole 64 measured in the direction of the rows or columns.
• the holes 64 are arranged regularly according to the rows and according to the columns.
• the term “p” is the step of repeating holes 64, that is to say the distance in plan view from the centers of two successive holes 64 of a row or a column.
• the angular filter 16 shown in FIGS. 10 and 11 allows only the rays of the incident radiation to pass whose incidence relative to the support 60 is less than one maximum angle of incidence, which is defined by the following relation (1):
• the zero incidence transmittance of the angle filter 16 is proportional to the ratio of the transparent surface in top view to the absorbing surface of the angle filter 16. For low light level applications, it is desirable that the transmittance be maximum to increase the amount of light collected by the image sensor 14. For applications with a high level of light, the transmittance can be reduced so as not to dazzle the image sensor 14.
• the photodetectors 28 can be divided into rows and columns.
• the pitch p of the holes 64 is smaller than the pitch of the photodetectors 28 of the image sensor 14. In this case, several holes 64 may lie opposite a photodetector 28.
• the pitch p of the holes 64 is identical to the pitch of the photodetectors 28 of the image sensor 14.
• the angular filter 16 is then preferably aligned with the image sensor 14 so that each hole 64 is opposite a
• the pitch p of the holes 64 is larger than the pitch of the photodetectors 28 of the image sensor 14. In this case, several photodetectors 28 may be opposite a hole 64.
• the ratio h / w may vary from 1 to 10.
• the pitch p may vary from 10 ⁇ m to 30 ⁇ m, for example about 15 ⁇ m.
• the height h may vary from 1 ⁇ m to 1 mm, preferably from 20 ⁇ m to 100 ⁇ m.
• the width w may vary from 5 ⁇ m to 30 ⁇ m, for example about 10 ⁇ m.
• the substrate 60 may be a transparent polymer, especially polyethylene terephthalate PET, poly (methyl methacrylate) PMMA, cyclic olefin polymer (COP).
• the thickness of the substrate 60 may vary from 1 to 100.
• the substrate 60 may correspond to a colored filter, to a polarizer, to a half-blade wave or at a quarter-wave plate.
• the support 60 may furthermore correspond to the image sensor 14 or to a protective layer covering the image sensor 14.
• the holes 64 may be filled with air or filled with a material at least partially transparent to the radiation detected by the photodetectors 28, for example polydimethylsiloxane (PDMS).
• the holes 64 may be filled with a partially absorbent material to chromatically filter the rays filtered angularly by the angular filter 16.
• the angular filter 16 can then play the role of a color filter. This makes it possible to reduce the thickness of the system with respect to the case where a colored filter distinct from the angular filter 16 is present.
• the partially absorbent filler material may be a colored resin or a colored plastic material such as PDMS.
• the filling material of the holes 64 may be adapted to have a refractive index matching with the upper layer in contact with the angular filter 16 or to stiffen the structure and improve the mechanical strength of the angular filter 16.
• the walls 62 are entirely of absorbent material at least for the wavelengths to be filtered angularly.
• the walls 62 may be in colored resin, for example a colored or black SU-8 resin.
• the walls 62 may be a black absorbent resin in the visible range and the near infrared.
• the walls 62 may be of colored resin absorbing visible light of a given color, for example blue light, in the case where the source 42 emits light of given color, in the case where the source 42 is polychromatic and the image sensor 14 is responsive only to the given color light or in the case where the source 42 is polychromatic, the image sensor 14 is sensitive to visible light and a filter of the given color and interposed between the angular filter 16 and the object to be detected.
• An embodiment of a manufacturing method of the angular filter 16 shown in FIGS. 10 and 11 comprises the following steps:
• Another embodiment of a method of manufacturing the angular filter 16 shown in FIGS. 10 and 11 comprises the following steps:
• Another embodiment of a method of manufacturing the angular filter 16 shown in FIGS. 10 and 11 comprises the perforation of a colored film of thickness h, for example a film made of PDMS, PMMA, PEC, COP.
• the perforation can be performed using a micro-perforation tool comprising for example microneedles to obtain the dimensions of the holes 64 and the pitch of the desired holes 64.
• the angular filter 16 is formed directly on the image sensor 14, the support 60 can then correspond to the image sensor 14 or to a protective layer covering the image sensor. According to another embodiment, the angular filter 16 is formed separately from the image sensor 14. The angular filter 16 is then subsequently fixed to the image sensor 14, for example by rolling. The thickness of the substrate 60 is then preferably less than 50 ⁇ m, and the substrate 60 is at least partially transparent. at the wavelengths of interest to be measured by the image sensor 14.
• FIG. 12 is a sectional, partial and schematic view of an alternative embodiment of the walls 62 of the angular filter 16 shown in FIGS. 10 and 11 in which each wall 62 comprises a core 66 made of a first material, at least in part; transparent to the radiation detected by the image sensor 14 and covered with a layer 68 opaque to the radiation detected by the photodetectors 28, for example absorbent and / or reflective with respect to the radiation detected by the photodetectors 28.
• the first material may be a resin.
• the second material may be a metal, for example aluminum (Al) or chromium (Cr), a metal alloy or an organic material.
• An embodiment of a manufacturing method of the angular filter 16 shown in FIGS. 10 and 11 comprises the following steps:
• a transparent resin layer on the support 60, for example by spin coating or by die coating;
• the layer 68 on the cores 66 in particular by a selective deposition, for example by evaporation, of the second material only on the cores 66, or by depositing a layer of the second material on the cores 66 and on the support 60 between the cores 66 and by removing the second material present on the support 60.
• FIG. 13 is a partial schematic sectional view of another embodiment of the angular filter 16.
• the angular filter 16 comprises the structure shown in FIGS. 10 and 11 and furthermore comprises, for each hole 64, a microlens 70 resting on the tops of the walls 62 and covering the hole 64.
• Each microlens 70 advantageously makes it possible to increase the collection of rays of the incident radiation whose incidence is less than a maximum angle of incidence desired but which would be blocked by the wall walls 62 in the absence of the microlens 70. Such an embodiment is particularly suitable for applications in which the light level is low, such as the capture of fingerprints through the display screen 52.
• the microlenses 70 may be made of silica or PMMA.
• the filling material of the holes 64 may be the same as the material making up the microlenses 70.
• the pitch of the microlenses 70 may be the same as the pitch of the photodetector 28 or smaller.
• the holes 64 of the angle filter 16 act essentially as an optical micro-diaphragm between the microlenses 70 and the image sensor 14 so that there is less stress on the shape ratio w / h holes 64 relative to the case where the microlenses 70 are not present.
• the maximum angle of incidence is determined by the width w of the holes 64 and the curvature of the microlenses 70.
• FIG. 14 is a sectional, partial and schematic view of a variant of the embodiment shown in FIG. 13 in which the cross section of the holes 64 is not constant, the cross section decreasing as the FIG. 14 shows light rays in normal incidence which are not blocked by the angular filter 16 and, in the right-hand part of FIG. 14, light rays.
• FIG. 15 is a partial schematic sectional view of a variant of the embodiment shown in FIG. 13 in which the walls 62 are formed in a thin layer located substantially at the level of the focal plane of the microlenses so that each hole 64 is centered substantially on the focus of the associated microlens 70.
• FIG. 15 shows, in the left-hand part, light rays in normal incidence which are not blocked by the angular filter 16 and, in the right-hand part of FIG. 15, oblique incidence light rays which are blocked by the filter
• This aperture arrangement at (or near) the focal plane makes it possible to maintain the angular selectivity of the filter without decreasing the effective sensitivity of the pixel by a reduction in its active surface area.
• One embodiment of a method of manufacturing the angular filter 16 shown in FIG. 14 or 15 comprises the following steps:
• microlenses on the upper surface of a transparent support, in particular by printing techniques
• the holes 64 in the layer by exposing the photosensitive resin by a collimated light through the mask constituted by the microlens array 70 and removing the exposed portions of the resin.
• This method of realization makes it possible to automatically align the microlenses 70 with the holes 64.
• FIG. 16 is a partial, schematic cross-sectional view of a variant of the embodiment shown in FIG. 13 in which the walls 62 comprise flanges 72 on which the microlenses 70 rest and comprise end portions 74 which are extend from the flanges 72 between the microlenses 70. This reduces the crosstalk between microlenses 70 neighbors.
• FIG. 17 is a partial, schematic sectional view of another embodiment of the angular filter 16 in which the angular filter 16 comprises an optical fiber plate.
• the optical fiber plate comprises optical fibers 76 whose optical axes are substantially parallel and oriented parallel to the axis of the zero incidence rays detected by the image sensor 14.
• the core 78 of each optical fiber 76 is a first transparent material for the radiation detected by the image sensor 74.
• the sheath 80 each optical fiber 76 surrounds the core 78 and is of a material having a refractive index lower than that of the core 78.
• the sheaths 78 of the optical fibers 76 may form a one-piece structure.
• FIG. 18 is a view from above of a more detailed embodiment of the image sensor 14 in which each photodetector 28 corresponds to a photodiode and in which the image sensor 14 comprises a selection element 90 associated with each photodiode 28.
• the selection element 90 may correspond to a transistor, for example an amorphous silicon transistor, a low temperature polycrystalline silicon (LTPS) transistor, an oxide-based transistor. indium, gallium and zinc (IGZO) or an organic field effect transistor (OFET), in particular an organic thin film transistor (English Organic Thin Film Transistor or OTFT).
• a transistor for example an amorphous silicon transistor, a low temperature polycrystalline silicon (LTPS) transistor, an oxide-based transistor. indium, gallium and zinc (IGZO) or an organic field effect transistor (OFET), in particular an organic thin film transistor (English Organic Thin Film Transistor or OTFT).
• One of the source and drain terminals of the transistor 90 is connected to a lower electrode 92 of the photodiode by a connection element 94 and the other one of the source and the drain is connected to a conductive track 96.
• Each conductive track 96 may be connected to all the transistors 90 of the same column.
• the gate of each transistor 90 may be controlled by a signal transmitted by a conductive track 98.
• Each conductive track 98 may be connected to all the transistors 90 of the same row.
• Fig. 19 is a sectional view of a more detailed embodiment of the display system 50 including the image sensor 14 shown in Fig. 18. Only a photodetector 28 and the associated selection element 90 are represented in FIG. 19. The display screen 52 is not shown in detail in FIG. 19.
• the image sensor 14 comprises successively from bottom to top in FIG. 19:
• the support 53 comprising two opposite faces 100, 102; the track 98 resting on the face 100 of the support 53; a stack 104 of insulating layers covering in particular the track 98;
• a semiconductor portion 106 in which are formed the drain and source regions of the transistor 90, separated from the associated track 98 by the stack 104 of insulating layers;
• connection element 94 and the conductive track 96 extending over the stack 104 of insulating layers
• connection member 94 an electrically insulating layer 108 covering the semiconductor portion 106 and the conductive track 96 and including an opening 110 exposing a portion of the connection member 94;
• connection element 94 covering the insulating layer 108 and in contact with the connection element 94 through the opening 110, the portion of the connection element 94 in contact with the active layer 112 forming the lower electrode 92 of the photodetector 28;
• an electrically conductive layer 114 covering the active layer 112 and forming the upper electrode of the photodetector 28;
• the angular filter is not shown in FIG. 19.
• the active layer In the present embodiment, the active layer
• each photodetector 28 which corresponds to the zone in which the majority of the incident radiation is absorbed and converted into an electrical signal by the photodetector 28 corresponds substantially to the part of the layer active 112 located between the lower electrode 92 and the upper electrode 114.
• the support 57 may be of a dielectric material.
• the support 57 is, for example, a rigid support, in particular glass or a flexible support, for example polymer or a metal material.
• polymers are polyethylene naphthalene (PEN), polyethylene terephthalate (PET), polyimide (PI), and polyetheretherketone (PEEK).
• the thickness of the support 57 is, for example, between 20 ⁇ m and 1 cm, for example about 125 ⁇ m.
• the conductive tracks 96, 98 and the connection element 94 may be made of a metallic material.
• the conductive tracks 96, 98 and the connection element 94 may have a monolayer or multilayer structure.
• the conductive layer 114 is at least partially transparent to the light radiation from the display screen 52.
• the conductive layer 114 may be of a conductive and transparent material, for example conductive and transparent oxide or TCO (Transparent Conductive Acronym Oxide), carbon nanotubes, graphene, a conductive polymer, a metal, or a mixture or an alloy of at least two of these compounds.
• TCO Transparent Conductive Acronym Oxide
• the conductive layer 114 may have a monolayer or multilayer structure.
• TCOs suitable for producing conductive layer 114 are indium tin oxide (ITO).
• conductive polymers suitable for producing conductive layer 114 are the polymer known under the name PEDOT: PSS, which is a mixture of poly (3,4) -ethylenedioxythiophene and sodium polystyrene sulphonate and polyaniline, also called PAni.
• metals suitable for producing conductive layer 114 are silver (Ag), aluminum (Al), gold (Au), copper (Cu), nickel (Ni), titanium ( Ti) and chromium (Cr).
• An example of a multilayer structure suitable for producing the conductive layer 114 is a multilayer structure of AZO and silver of the AZO / Ag / AZO type.
• the thickness of the conductive layer 114 may be between 10 nm and 5 ⁇ m, for example of the order of 30 nm. In the case where the conductive layer 114 is metallic, the thickness of the conductive layer 114 is less than or equal to 20 nm, preferably less than or equal to 10 nm.
• the dielectric layer 108 and / or each layer of the stack 104 may be made of fluoropolymer, in particular the fluoropolymer marketed under the name Cytop by the company Bellex, polyvinylpyrrolidone (PVP), polymethylmethacrylate (PMMA), polystyrene (PS), parylene, polyimide (PI) or a mixture of at least two of these compounds.
• the dielectric layer 108 and / or each layer of the stack 104 may be made of an inorganic dielectric, in particular of silicon nitride (SiN) or of silicon oxide (SiOx).
• the maximum thickness of each dielectric layer 104, 108 may be between 50 nm and 2 ⁇ m, for example of the order of 200 nm.
• Active layer 112 may comprise small molecules, oligomers or polymers. It can be organic or inorganic materials.
• the active layer 112 may comprise an ambipolar semiconductor material, or a mixture of an N-type semiconductor material and a P-type semiconductor material, for example in the form of superposed layers or of an intimate mixture at the nanoscale so as to form a volume heterojunction.
• the thickness of the active layer 112 may be between 50 nm and 2 ⁇ m, for example of the order of 500 nm.
• P-type semiconductor polymers suitable for producing the active layer 40 are poly (3-hexylthiophene) (P3HT), poly [ ⁇ -9'-heptadecanyl-2,7-carbazole-alt-5,5 (4, 7-di-2-thienyl-2 ', 1', 3'-benzothiadiazole)] (PCDTBT), poly [(4,8-bis (2-ethylhexyloxy) -benzo [1,2- b; 4, 5-b '] dithiophene) -2,6-diyl-alt- (4- (2-ethylhexanoyl) -thieno [3,4-b] thiophene) -2,6-diyl] (PBDTTT-C), poly [2-methoxy 5- [2- (2-ethylhexyloxy) -1,4-phenylenevinylene] (MEH-PPV) or poly [2,6- (4,4-bis- (2-ethylhex
• N-type semiconductor materials suitable for producing active layer 112 are fullerenes, especially C60, methyl [6, 6] -phenyl-C8 ] -butanoate ([60JPCBM), [6, 6], 6] -phenyl-C7 ] _ -butanoate methyl ([70JPCBM), perylene diimide, zinc oxide (ZnO) or nanocrystals allowing the formation of quantum dots (in English quantum dots).
• the active layer 112 may be interposed between first and second interface layers, not shown.
• the first interface layer aligns the output work of the electrode 92 or 114 with the electronic affinity of the acceptor material used in the active layer 112.
• the first interface layer can be made of cesium carbonate ( CSCO3), to a metal oxide, in particular zinc oxide (ZnO), or to a mixture of at least two of these compounds.
• the first interface layer may comprise a monomolecular layer ⁇ self assembly or a polymer, e.g., (polyethyleneimine, polyethyleneimine ethoxylated poly [(9, 9-bis (3 '- (N, -dimethylamino) propyl) -2, 7-fluorene) -alt-2,7- (9,9-dioctylfluorene).
• the second interface layer aligns the output work of the other electrode 92 or 114 with the ionization potential of the material. donor used in the active layer 112.
• the second interface layer may be made of copper oxide (CuO), nickel oxide (NiO), vanadium oxide (V2O5), magnesium oxide (MgO), tungsten oxide (WO3) or a mixture of at least two of these compounds
• the interface layers facilitate the collection, injection or blocking of charges from the electrodes in the active layer 112.
• the thickness of each interface layer is preferably between 0.1 nm and 1 ym.
• the adhesive layer 116 allows the image sensor 14 to be attached to the display screen 52.
• the adhesive layer 116 may be of a dielectric material.
• the adhesive layer 116 may have a thickness of between 1 ⁇ m and 100 ⁇ m, for example about 15 ⁇ m.
• the adhesive layer 116 corresponds to an epoxy adhesive.
• the adhesive layer 116 corresponds to a pressure-sensitive adhesive or PSA (English acronym for Pressure-Sensitive Adhesive).
• FIG. 20 is a sectional view similar to FIG. 19 of another more detailed embodiment of the display system 50 comprising the image sensor 14 shown in FIG. 18.
• the image sensor 14 comprises the same elements only for the embodiment shown in FIG. 19 with the difference that the connection element 94 is not in direct contact with the active layer 112, the image sensor 14 comprising, for each photodetector 28, an electrically conductive layer 117, playing the role of lower electrode, resting on the insulating layer 108 in contact with the active layer 112 and in contact with the connection element 94 through the opening 110.
• the contact surface between the lower electrode 115 and the active layer 112 may be greater than the contact area between the connection element 94 and the active layer 112 in the embodiment shown in FIG. 19.
• the image sensor 14 may comprise a protective layer, for example a dielectric material, interposed between the upper electrode 114 and the adhesive layer 116.
• the image sensor 14 may comprise means for filtering the incident radiation as a function of the incidence of the radiation with respect to the protective layer 18 of the display screen 52, in particular so that each photodetector 28 receives only the radiation whose incidence relative to an axis perpendicular to the protective layer 18 of the display screen 52 is less than 45 °, preferably less than 30 °.
• the filtering means may comprise a pinhole array covering the photodetector array 28.
• the means for filtering may comprise a lens array, for example Fresnel lenses.
• the filtering means may comprise an optical fiber network whose axes are parallel and oriented substantially perpendicular to the face 19 of the display screen 52, the optical fiber network covering the network. photodetectors 28.
• Fig. 21 is a sectional view similar to Fig. 19 of another more detailed embodiment of the display system 50 comprising the image sensor 14 shown in Fig. 18.
• the image sensor 14 comprises the same elements for the embodiment shown in Figure 19 and further comprises a layer 118 of a material opaque to radiation detected by the photodetectors 28 and comprising, for each photodetector 28, an opening 120 filled with a material 122 at least partially transparent to the radiation detected by the photodetectors 28.
• the image sensor 14 may comprise means for filtering the incident radiation according to the wavelength interposed between the display screen 52 and the active layer 112. It may be a filter adapted to allow the radiation coming from the actuator to be detected to be detected over the range of wavelengths detected by the photodetectors 28.
• FIG. 22 is a sectional view similar to FIG. 19 of another more detailed embodiment of the display system 50 comprising the image sensor 14 shown in FIG. 18.
• the image sensor 14 comprises the same elements only for the embodiment shown in FIG. 19, with the difference that the active layer 112 is replaced, for each detection pixel, by an active portion 124. This makes it possible to suppress the risks of optical crosstalk that could be observed with the embodiment described in FIG. 19.
• All the active portions 120 may have the same composition as the active layer 112. Alternatively, the active portions 120 may have different compositions and be adapted to detect light radiation at different wavelengths.
• the transistors 90 are in low gate (transistors) insofar as the tracks 98 forming the gates of the transistors 90 are interposed between the support 53 and
• the transistors 90 may be high gate transistors for which the semiconductor portions 106 of the transistors 90 are interposed between the support 53 and the tracks 98 forming the transistors. grids.
• the manufacturing method of the display system 50 comprises the production of the display screen 52, the production of the image sensor 14 and the attachment of the image sensor 14 to the display screen. display 52 by the adhesive layer 116.
• the manufacturing method of the display system 50 makes it possible to directly reuse conventional structures of display screens and / or image sensors.
• the manufacturing steps of the elements of the image sensor do not interfere with the manufacturing steps of the elements of the display screen and / or vice versa.
• the display screen and the image sensor may include electronic components of the same nature, including transistors, which may be designed to meet different operating constraints for the display screen and the display. image sensor.
• the method of forming the layers of the image sensor 14 may correspond to a method said additive, for example by direct printing of the material constituting the organic layers at the desired locations, especially in the form of sol-gel, for example by inkjet printing, heliography, screen printing, flexography, spray coating (in English spray coating) or deposit drop-casting.
• the method of forming the layers of the image sensor 14 may correspond to a so-called subtractive process, in which the material making up the organic layers is deposited on the entire structure and in which the unused portions are then removed, for example by photolithography or laser ablation.
• the material composing the organic layers is deposited on the entire structure and not be removed, the step of the photodetectors 28 then being obtained by the position of the electrodes 92.
• the deposition on the entire structure can be achieved for example by liquid, sputtering or evaporation. This may include processes such as spin coating, spray coating, heliography, slot-die coating, blade-coating, flexography or screen printing.
• the metal is, for example, deposited by evaporation or cathodic sputtering on the entire support and the metal layers are defined by etching.
• the layers of the image sensor 14 can be made by printing techniques.
• the materials of these layers described above can be deposited in liquid form, for example in the form of conductive and semiconductive inks using ink jet printers.
• materials in liquid form here also means gel materials deposited by printing techniques.
• Annealing steps are optionally provided between the deposits of the different layers, but the annealing temperatures may not exceed 150 ° C., and the deposition and any annealing may be carried out at atmospheric pressure.
• Particular embodiments have been described.
• the angular filter 16 described above can also be used to collimate the radiation passing through it.
• the angular filter can serve as a polarizing filter, the filter being formed by perforation of a polarizing film or being formed on a polarizing layer.
• the polarization direction of the polarizing film is chosen different from the polarization direction of the radiation so that the radiation is substantially blocked by the polarizing film.
• a field effect transistor is associated with each light emitting component, it is clear that two or more field effect transistors may be associated with each light emitting component.
• a field effect transistor is associated with each photodetector of the image sensor, it is clear that two or more field effect transistors can be associated with each photodetector.
• angular filters described in connection with FIGS. 10 to 17 can be implemented with the image acquisition system 10 shown in FIG. 1, the image acquisition filter 25 shown in FIG. , the image acquisition filter 40 shown in FIG. 4 or the display system shown in FIG. 7.
• the filter layer 118 described in connection with FIG. 21 can also be used with the embodiment described in connection with Figures 20 and 22.

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