EP3501042A1 - Method for connecting cross-components at optimised density - Google Patents

Method for connecting cross-components at optimised density

Info

Publication number
EP3501042A1
EP3501042A1 EP17764883.9A EP17764883A EP3501042A1 EP 3501042 A1 EP3501042 A1 EP 3501042A1 EP 17764883 A EP17764883 A EP 17764883A EP 3501042 A1 EP3501042 A1 EP 3501042A1
Authority
EP
European Patent Office
Prior art keywords
connection
insert
hybridization
barrier
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17764883.9A
Other languages
German (de)
French (fr)
Inventor
François Marion
Lydie Mathieu
Frédéric Berger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP3501042A1 publication Critical patent/EP3501042A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05555—Shape in top view being circular or elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/0558—Plural external layers being stacked
    • H01L2224/05582—Two-layer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10145—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H01L2224/11472—Profile of the lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H01L2224/1148—Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/116—Manufacturing methods by patterning a pre-deposited material
    • H01L2224/11602—Mechanical treatment, e.g. polishing, grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H01L2224/13007—Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13011—Shape comprising apertures or cavities, e.g. hollow bump
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13012—Shape in top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13012—Shape in top view
    • H01L2224/13014—Shape in top view being circular or elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13018—Shape in side view comprising protrusions or indentations
    • H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13023—Disposition the whole bump connector protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/13078—Plural core members being disposed next to each other, e.g. side-to-side arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13164—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13169—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13171—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13184—Tungsten [W] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13186—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/1356—Disposition
    • H01L2224/13562—On the entire exposed surface of the core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/1357—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/1601—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81053—Bonding environment
    • H01L2224/81095—Temperature settings
    • H01L2224/81099—Ambient temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8134—Bonding interfaces of the bump connector
    • H01L2224/81345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81897—Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like
    • H01L2224/81898—Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/384—Bump effects
    • H01L2924/3841—Solder bridging

Definitions

  • the invention relates to the field of microelectronics and optoelectronics and relates more particularly to the methods of connecting components of microelectronics and optoelectronics with each other and in particular the methods of vertical connection (also known by the names " hybridization "and” flipped chip ", and better known by their English name” flip-chip ").
  • the invention thus relates to a method of connecting two components together and an assembly comprising two components connected to each other.
  • the light capture component is generally integrated in a III-V semiconductor substrate, such as a gallium nitride GaN substrate
  • the light capture component is generally integrated in a III-V semiconductor substrate, such as a gallium nitride GaN substrate.
  • processing electronics for processing the signals obtained by the capture component is integrated in a silicon Si substrate.
  • the first and second components respectively comprise a first and a second connection face, the first connection face comprising at least a first and a second connection area to respectively connect to at least a third and a fourth corresponding area of the second connection face.
  • the method comprises the following steps: forming a first and a second stud of ductile material, such as a first and second indium ball, in respective contact with the first and the second connection zone,
  • a third and a fourth pad of ductile material such as a third and a fourth indium ball, in respective contact with the third and fourth connection zones,
  • connection connecting the first and second connection areas with respectively the third and fourth connection areas, the first and second connection areas being opposite the third and fourth connection areas and the connection being made by thermocompression.
  • the first and the second insert will have a relatively small contact surface and adapted to fit into the plot of ductile material corresponding. This significantly reduces the temperature and pressure requirements for obtaining such an insertion. It is therefore possible to reduce the temperature and the pressure used during the thermocompression and therefore to better control the crushing of the stud of ductile material.
  • Such a constraint is related to the fact that during the connection, and therefore the insertion of the inserts in the studs of ductile material, the deformation of the studs of ductile material can be in the direction of adjacent zones and cause connections, that is, short circuits between adjacent studs of ductile material.
  • the present invention aims to remedy this drawback and is therefore more precisely intended to provide a two-component connection method that does not present a risk of short-circuiting between two adjacent connection areas, this even for significant connection densities, said method being simpler than those of the prior art, such as that taught by US 2010/207266, which does not present a risk of short circuit between two connection areas.
  • the invention relates for this purpose to a method of electrical connection by hybridization of a first component to a second component, the first and second components respectively comprising a first and a second connection face, the first connection face comprising at least a first and a second connection area to respectively connect to at least a third and a fourth corresponding connection area of the second connection face,
  • first and a second stud of metal ductile material in respective contact with the first and the second connection zone, forming a first and a second insert made of conductive material in contact with the third and fourth connection areas respectively, the first and the second insert being intended to be inserted respectively into the first and second studs of ductile material;
  • the method further comprising the steps of:
  • first and second hybridization barrier arranged at least partly between the first and the second insert and electrically insulated from each other, said first and second barrier of hybridization being both positioned outside the orthogonally projected surfaces on the second connecting face of the first and second pads made of ductile material when the first and the second connection zone are placed opposite the third and fourth respectively connection zone, the first and the second hybridization wall being outside respectively the fourth and the third connection zone,
  • connection zone connecting the first and the second connection zone with respectively the third and the fourth insertion connection zone of the first and the second insert in respectively the first and the second stud of ductile material
  • the first and second connection zones being opposite the third and fourth connection zones and the first and second hybridization barriers serving as a barrier by containing the deformation of respectively the first and the second stud of ductile material towards the fourth and the fourth respectively.
  • third connection area serving as a barrier by containing the deformation of respectively the first and the second stud of ductile material towards the fourth and the fourth respectively.
  • the first and the second insert are in a hollow form.
  • the method further comprising the following step:
  • connection areas connecting the first and second connection areas with respectively the third and fourth insertion connection regions of the first and second inserts in the first and second ductile material pads, respectively, the first and second connection areas being in contact with each other. with respect to the third and fourth connection areas and the first and second hybridization barrier barrier office by containing the deformation respectively of the first and the second stud of ductile material towards respectively the fourth and the third connection zone.
  • the step of forming the first and the second insert comprises the following sub-steps:
  • polishing the second face so as to remove the portion of the layer of the metallic material which is in contact with the surface of the sacrificial layer which is opposite to the second connection face and retain the parts of the layer of the metal material 320 covering the previously released parts, said retained portions thus forming the conductive elements of the connection areas,
  • the first and second hybridization barriers by containing the deformation of the ductile material pads towards the other pad of ductile material, eliminate any risk of direct contact between the first and the second pad of ductile material.
  • the first and second hybridization barrier being electrically insulated from each other, this insulation is used to electrically isolate the first and the second stud of ductile material electrically from one another.
  • the hybridization barriers are formed at the same time as the inserts.
  • the result is a simplified process vis-à-vis those of the prior art for which the hybridization barriers are formed separately inserts.
  • the first and the second hybridization barrier can be formed respectively in contact with the third and the fourth zone of connection.
  • the first and second hybridization barriers being formed respectively in contact with the third and the fourth contact zone, the space between the third and fourth connection areas can be minimized since it is not occupied by hybridization barriers.
  • the first and second hybridization barriers may be made of a conductive material.
  • the first and second hybridization barriers participate respectively in the electrical connection between the first ductile material pad and the third connection zone and between the second ductile material pad and the fourth connection pad.
  • conductor and "insulator” when used above and in the rest of this document should be understood as “electrical conductor” and “electrical insulator”.
  • the steps of forming the first and second insert and the first and second hybridization barrier can be carried out simultaneously, the first and the second insert and the first and second hybridization barrier being made of the same conductive material. .
  • the electrical connection between the first and the second component can be obtained with a reduced number of steps.
  • the formation of the first insert and the first hybridization barrier consists in the formation of a first conductive element in contact with each other.
  • the third connection zone, the formation of the second insert and the second hybridization barrier consists of forming a second conductive element in contact with the fourth connection zone.
  • the first and second conductive elements may each be in the form of first and second cylindrical walls of revolution and concentric, each extending substantially perpendicular to the corresponding connection area surface, the first wall being surrounded by the second wall and forming the insert corresponding to said conductive element, the surface of the second wall facing the first wall forming the hybridization barrier corresponding to said conductive element.
  • steps of forming the first and second insert and the first and second hybridization barrier may comprise the following substeps:
  • polishing the second face so as to remove the portion of the layer of the metallic material which is in contact with the surface of the sacrificial layer which is opposite to the second connection face and retain the parts of the layer of the metallic material covering the parts previously released, said conserved portions thereby forming the conductive elements of the connection areas,
  • the first and second hybridization barrier may respectively surround the first and the second insert.
  • first and the second insert it can be formed a first and a second conductive element forming respectively the first and second in sert serves,
  • At least a first non-conductive element at least partially positioned between the first and the second insert may be formed, the at least one first element insulator having a first surface facing the first insert forming the first hybridization barrier and a second surface facing the second insert forming the second hybridization barrier.
  • the invention also relates to a set of two components connected to one another by hybridization,
  • first component has a first connection face comprising at least a first and a second connection area, each of the first and second connection areas, said first component further comprising contacting a first and a second pad of ductile material in contact respectively with the first and the second connection zone,
  • the second component comprises a second connection face comprising at least a third and a fourth connection zone vis-à-vis respectively the first and the second connection zone, the second component further comprising a first and a second insert in contact with respectively the third and fourth connection zone, the first and the second insert being respectively inserted in the first and second ductile material stud of the first and the second connection zone so as to ensure a connection between the first and the second connection zone and the third and the fourth connection zone respectively,
  • the second component further comprising on its second connecting face a first and second hybridization barrier arranged at least partly between the first and the second insert, the first and second hybridization wall being respectively outside the fourth and the third connection zone and acting as a barrier respectively to the first and the second stud of ductile material towards respectively the fourth and the third connection zone.
  • the first insert and the first barrier being connected by a first metal base formed solely between these two last, the second insert and the second barrier being connected by a second metal base formed solely between the latter two.
  • the first and second hybridization barrier and the first and the second insert may be made of a conductive material.
  • the first insert and the first barrier may be provided by a first conductive element in contact with the first connection zone, the second insert and the second barrier being provided by a second conductive member in contact with the second connection zone.
  • the hybridization barriers can participate in the connections between the first and the third connection zone and between the second and the fourth connection zone.
  • the first and second hybridization barrier may be provided by at least one first insulating element, said at least one first insulating element having a first surface facing the first insert forming the first hybridization barrier and a second surface facing the second insert forming the second hybridization barrier.
  • Such an insulating element makes it possible to obtain good electrical insulation between the third and the fourth connection zone.
  • the risks of short circuit between the third and the fourth connection zone are thus particularly low.
  • FIG. 1 is a schematic sectional view of a set of two components connected to each other by hybridization according to a first embodiment of the invention, the first component comprising two hybridization pads, the second component having two conductive elements forming inserts and hybridization barriers,
  • FIG. 2 is a schematic perspective view showing only the second component of the assembly illustrated in FIG. 1;
  • FIG. 3 is a close schematic sectional view on a connection zone of the first and second components of the assembly illustrated in FIG. 1 before the connection, FIG. 3 illustrating the design constraints of the hybridization barriers according to the invention.
  • FIGS. 4A to 4F illustrate the steps of forming conductive elements of the second component of the assembly illustrated in FIG. 1,
  • FIG. 5 illustrates a schematic view from above of a second component of an assembly according to this first embodiment of the invention for which twelve connections are provided
  • FIG. 6 illustrates the main connection steps of the first component with the second component to form an assembly according to this first embodiment, such as that illustrated in FIG. 1,
  • FIGS. 7A to 7E illustrate schematic cross-sectional views of an assembly and a top view of the second component of the same assembly respectively according to the first to a sixth embodiment of the invention
  • FIG. 7A corresponding to the assembly according to the first embodiment
  • Figure 7B corresponding to an assembly according to a second embodiment not covered by the invention wherein the first and second hybridization barriers are formed by an insulating conductive element
  • Figure 7C corresponds to a set according to a fourth embodiment in which each of the inserts is a beveled insert
  • FIG 7D corresponding to an assembly according to a fifth embodiment not covered by the invention wherein each of the connection areas comprises a first and a second conductive element cylindrical ellipsoidal section each participating in the formation of the insert and the hybridization barrier
  • FIG. 7E corresponding to an assembly according to a sixth embodiment not covered by the invention wherein each of the connection areas comprises a conductive element forming the insert and a non-conducting element forming the hybridization barrier
  • FIG. 8 illustrates four views from above of different shape configurations for the insert / hybridization barrier assembly compatible with the first embodiment, the view referenced a) corresponding to inserts and square section hybridization barriers, the view referenced b) corresponding to circular inserts and hybridization barriers of square section, the view referenced c) corresponding to circular inserts and hexagonal section hybridization barriers, the referenced view d) corresponds to solid circular inserts and hexagonal section hybridization barriers.
  • FIG. 1 represents an assembly 1 of two connected components 100, 200 whose connection has been obtained by means of a method according to a first embodiment of the invention.
  • This first component 100 may thus be, for example, an optical sensor, such as a CCD or CMOS matrix, or an imager, such as an LCD matrix, to be connected to a second component, such as an optical sensor electronics. or imager.
  • an optical sensor such as a CCD or CMOS matrix
  • an imager such as an LCD matrix
  • the first component 100 may thus comprise a semiconductor support of a first type, such as a support in semiconductor material III-IV such as a support of the gallium nitride / corundum type, the second component comprising a semiconductor support of a second type, such as Si silicon support or Ge germanium.
  • a semiconductor support of a first type such as a support in semiconductor material III-IV such as a support of the gallium nitride / corundum type
  • the second component comprising a semiconductor support of a second type, such as Si silicon support or Ge germanium.
  • 100, 200, such a set of two components 100, 200 comprises:
  • the first component 100 having a first connection face 101 comprising at least a first and a second connection zone 110, 120, said first component 100 further comprising a first and a second plot of ductile material 111, 121 in contact respectively with the first and the second connection zone 110, 120,
  • the second component 200 comprising a second connection face 201 comprising at least a third and a fourth connection zone 210, 220 vis-à-vis respectively the first and the second connection zone 110, 120, the second component 200 comprising in addition a first and a second insert 211, 221 in contact respectively with the third and the fourth connection zone 210, 220, the first and the second insert 211, 221 being respectively inserted into the first and second stud of ductile material 111, 121, the second component 200 further comprising on its second connection face a first and second hybridization barrier 212, 222 arranged at least partly between the first and the second insert 211, 221 and being electrically isolated from one another.
  • the first and the second hybridization wall 212, 222 being outside respectively the fourth and the third connection zone 220, 210 and Barrier, respectively, to the first and second ductile material studs 111, 121 respectively to the fourth and third connection zones 210, 220.
  • the first component 100 has on the first connection face 101 the first and the second connection zone 110, 120.
  • Each of the first and the second connection zone 110, 120 is formed by a metal layer acting as contact for the
  • the metal layers forming the first and the second connection zone 110, 120 are made of a material that can be wetted by the material of the first and second pads made of ductile material 111, 121. such a characteristic is not necessary when a deformation connection is sought.
  • Each of the metal layers forming the first and the second connection zone 110, 120 may be made of a material selected from the group consisting of Au gold, Al aluminum, Ag silver, Ni nickel, Pt platinum, palladium Pd and their alloys.
  • these same metal layers forming the first and second connection areas 110, 120 may be formed of a first metal sub-layer to contact one of the areas of the first structure 102 and a second metal sub-layer covering the first metal layer and being realized in a wettable material to the material of which are formed the pads of ductile material 111, 121.
  • the wettable material has a total wettability vis-à-vis the material of studs of ductile material.
  • the spreading coefficient S of the material of the pads of ductile material, when in the liquid state is strictly positive.
  • the first and second connection zones 110, 120 are respectively provided with the first and second studs made of ductile material 111, 121.
  • Each of the first and second studs made of ductile material 111, 121 is made of a ductile metallic material such as aluminum. 'indium.
  • the material of the first and second stud of ductile material 111, 121 may be selected from the group comprising indium in, tin Sn, aluminum Al, copper Cu, zinc Zn and their alloys, such as the tin alloys SnPb lead-tin alloys and SnAgCu copper-silver-tin alloys.
  • the first and the second stud of ductile material can be made of indium In, Sn tin or one of its alloys such as lead-tin alloys SnPb and copper-silver-tin alloys SnAgCu, the first and second connection zones that can be made in Au gold.
  • the first and the second stud made of ductile material may be made of aluminum Al, copper Cu or zinc Zn, the first and the second connection zones being be made of Al aluminum, Cu copper or Zn zinc.
  • the second component 200 has on the second connection face 201 the third and the fourth connection zone 210, 220,.
  • Each of these third and fourth connection areas 210, 220 is formed by a metal layer acting as contact for the structure 201.
  • the metal layers forming the third and fourth connection areas 210, 220 are made of a material wettable by the material of the first and second pads ductilelll material, 121.
  • Each of the metal layers forming the third and fourth connection zone 210, 220 may be made of a material selected from the group consisting of Au gold, Al aluminum, Ag silver, Ni nickel, Pt platinum, Pd palladium and their alloys. .
  • the metal layers forming the third and fourth connection areas 210, 220 may also be formed of a first metal sub-layer for contacting one of the zones of the second structure 202 and a second metal sub-layer covering the first metal layer and being made of a wettable material whose material is made the pads of ductile material 111, 121.
  • the third and the fourth connection zone 210, 220 are respectively provided with a first and a second conductive element 215, 225.
  • the first element 215 comprises both the first insert 211 and the first hybridization barrier 212, while the second element 225 includes both the second insert 221 and the second hybridization barrier 222.
  • the first and the second conductive element 215, 225 are each in the form of a first and second cylindrical walls of revolution and concentric and which extend perpendicular to the surface of the corresponding connection area 210, 220.
  • the first and the second cylindrical wall of each of the first and second conductive elements 215, 225 have their axis of revolution perpendicular to the same surface of the corresponding connection area 210, 220.
  • the first wall is internal to the second wall, that is to say, it is surrounded by the second wall.
  • Each of the first and second conductive elements 215, 225 also comprises an annular base in contact with the corresponding connection zone 210, 220 and connecting the first and the second wall of said conductive element 215, 225 to each other.
  • the first and second conductive elements 215, 225 are made of a metallic material selected from the group comprising copper Cu, titanium Ti, tungsten W, chromium Cr, nickel Ni, platinum Pt, palladium and their alloys, such as tungsten silicide WSi, tungsten nitride WN and titanium nitride TiN. According to an advantageous possibility of the invention, the metallic material of the first and second conductive element 215, 225 is Cu copper.
  • each of the conductive elements 215, 225 may further comprise a metal coating, such as a gold layer, in order to protect the metal material of which it is made from oxidation.
  • the first and second conductive elements 215, 225 are dimensioned such that:
  • the first wall of the first and second conductive elements 215, 225 are disposed within a surface respectively corresponding to the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and second connection 110, 120 are placed opposite the third and the fourth connection zone 210, 220 respectively,
  • the second wall of the first and second conductive elements are arranged outside a surface respectively corresponding to the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and the second connection zone 110, 120 are connected to the third and fourth connection areas 210, 220, respectively.
  • first and the second conductive elements 215, 225 being formed in contact with respectively the third and the fourth connection zone 210, 220, the second wall of the first and second conductive elements 215, 225, by a such dimensioning, is outside respectively the fourth and third connection zone 220, 210.
  • first and second conductive elements 215, 225 are at a distance from each other, this without it there is any electrical connection between them.
  • the first and second conductive elements are electrically isolated from each other. So the first and second Hybridization barriers 212, 222 formed respectively by the second wall of the first and second conductive elements 215, 225, are also electrically insulated from each other.
  • the first wall of the first and second conductive elements 215, 225 respectively form the first and the second inserts 211, 221, and the internal surface of the second wall of the first and second the second conductive element 215, 225 form respectively the first and the second hybridization barrier 212, 222.
  • d10 and d25 being respectively the outer diameter of the first wall and the inside diameter of the second wall of said conductive element 215, 225 among the first and the second conductive element 215, 225, h10 the height of said first and second walls, d20 , h20 the maximum lateral dimension and the maximum height of the pad of ductile material 111, 121 corresponding to said conductive element 215, 225.
  • these dimensions as regards the studs of ductile material 111, 121 correspond to the dimensions of the latter before connection of the first component 100 with the second component 200, the stud of ductile material 111, 121 being subject to deformation during the connection.
  • a dimensioning is valid for a configuration in which during the assembly of the first and the second component 100, 200, the stud made of ductile material 111, 121 is placed opposite the corresponding conducting element.
  • the outer diameter d 10 of the first wall and the inner diameter d 25 of the second wall of the first and second conductive elements 215, 225 can of course be chosen to compensate for any misalignment between the conductive element 215, 225 and the stud made of ductile material.
  • 111, 121 corresponding, this by undersizing the outer diameter of the first wall and over-dimensioning the inner diameter of the second wall vis-à-vis the dimensions of the stud of ductile material 111, 121.
  • FIGS. 4A to 4E illustrate a process for forming conductive elements 235, 245, 255, 265, on the connection zones 230, 240, 250, 260 of a second component 200 according to this first embodiment, said component which comprises two second structures 202a, 202b, each connected by means of two respective connection zones 230, 240, 250, 260.
  • Such a formation method comprises the following steps:
  • a sacrificial layer 310 intended to form a hard mask said sacrificial layer having a thickness greater than the desired height h10 for the first and second conductive elements 215, 225 to be formed,
  • polishing as illustrated in FIG. 4E, of the layer of the metallic material 320 and of a portion of the sacrificial layer 310 so as to remove the part of the layer of the metallic material 320 covering the sacrificial layer 310 and to retain the parts of the layer of the metallic material covering the previously released portions 311, said parts of the layer of the metallic material 320 conserved thus forming the conducting elements 235, 245, 255, 265 of the connection zones 230, 240, 250, 260,
  • connection zones 230, 240, 250, 260, 270, 280 organized, for example and as illustrated in FIG. 5, in the form of a matrix with optimized connection density. The dimensioning and positioning of these connection areas are then controlled at the scale of one hundred nanometers and it is possible to consider steps between areas less than 5 ⁇ .
  • each of the connection areas 111 of the first component 100 may be equipped, with reference to FIG. 3, with a respective ductile material stud 111 having a diameter d20 of 3 ⁇ and a height h20 of 2.5 ⁇ .
  • the control circuit may comprise on each of these connection zones 210 a conductive element 215 with a height of 2.5 ⁇ and whose outside diameters of the insert and inside of the hybridization barrier d25, d10 are respectively equal to 1.5 ⁇ and 3.5 ⁇ .
  • connection method comprises the following steps:
  • first and second studs made of ductile material 111, 121 in respective contact with the first and the second connection zone 110, 120,
  • first and second conductive elements in contact with respectively the third and the fourth connection zone 210, 220 so as to thus form the first and second inserts 211, 221 made of conductive material, and the first and the second barrier of hybridization 212, 222 arranged at least partly between the first and the second insert and electrically insulated from each other,
  • connection zone 110, 120 with respectively the third and the fourth connection zone 210, 220 by insertion of the first and second inserts 211, 221 in respectively the first and the second stud of ductile material 111 , 121, the first and second connection areas 110, 120 facing the third and fourth connection areas 210, 220 and the first and second hybridization barriers 212, 222 acting as a barrier containing the deformation respectively the first and the second stud of ductile material 111, 121 towards respectively the fourth and the third connection zone 220, 210.
  • the step of providing the first and second conductive element 215, 225 may be a step of implementing the method of manufacturing the second component 200 already described.
  • connection step is ideally a connection step comprising two substeps of compression, such as those described in WO2009 / 115686. Such sub-steps are, with reference to FIG. 6:
  • the two insertion sub-steps can be realized. at room temperature and the final insertion step can be carried out in a low pressure environment such as primary vacuum (that is to say a pressure between 1000 and 1.10 " 3 mbar).
  • the final insertion step can be performed by means of a press without alignment system.
  • FIGS. 7A to 7E illustrate different embodiments of the invention which differ mainly in the shape of the first and second hybridization barriers 212, 222 and the first and second inserts 211, 221, some of these embodiments 'being not covered by the invention.
  • FIG 7A illustrates an assembly 1 according to the first embodiment with above a schematic sectional view of the assembly 1 and above a top view of the second component 200.
  • This figure being similar to Figures 1 to 3, we refer the reader to the description that has already been made.
  • FIG. 7B illustrates an assembly 1 according to a second embodiment not covered by the invention in which the first and second hybridization barriers 212, 222 are provided by means of a non-conductive element 216, the inserts 211, 221 being provided by conductive elements 215, 225 according to the principle described in document WO2009 / 115686.
  • Such an assembly 1 according to this second embodiment differs from an assembly 1 according to the first embodiment by the shape of each of the conductive elements 215, 225 providing the inserts 211, 221 and the presence of a non-conductive element 216 providing the first and the second hybridization barrier 212, 222.
  • the non-conductive element 216 is a wall made of an electrically insulating material, such as for example that forming the sacrificial layer 310 during the formation of the conductive elements 215, 225, disposed between the third and the fourth connection zone 210, 220.
  • the surface of the non-conductive element 216 facing the third connection zone 210 thus forms the first hybridization barrier 212 while the other surface, which makes therefore facing the fourth connection zone 220, forms the second connection barrier 222.
  • the non-conductive element 216 is made of an electrically insulating material, the first and second hybridization barriers are electrically isolated from one another. There is therefore no risk of a short circuit between the first and the second pad of ductile material 111, 121 when these first and second hybridization barriers 212, 222 contain the deformation of the pads made of ductile material 111, 121.
  • the first and second conductive elements 215, 225 being of the same type as the inserts described in the document WO2009 / 115686, the first and second conductive elements 215, 225 are disposed on a surface respectively corresponding to the projected surface orthogonally of the first and second plot of ductile material 111, 121 when the first and the second connection area 110, 120 are placed opposite the third and fourth connection areas 210, 220, respectively.
  • the non-conductive element 216 being disposed outside the third and fourth connection zones 210, 220, is outside the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and second connection zone 110, 120 are placed opposite the third and fourth connection zones 210, 220, respectively.
  • the method of forming the conductive elements 215, 225 and the non-conductive element 226 of a second component 200 according to this second embodiment of embodiment not covered by the invention differs from the method of forming the conductive elements 215, 225 according to the first embodiment in that during the step of removing the sacrificial layer 310, the deletion is only partial, a part of the sacrificial layer 310 being retained to form the non-conductive element 216.
  • FIG. 7C illustrates an assembly 1 according to a third embodiment in which each of the first and second conductive elements 215, 225 has its bevelled internal portion so as to favor the insertion of each of the first and second inserts 211, 221 in the stud. of ductile material 111, 112 corresponding.
  • An assembly according to this fourth embodiment differs from an assembly according to the first embodiment of the beveled shape of the inner portion of each of the first and second conductive elements 215, 225.
  • each of the first and second conductive members 215, 225 has the beveled inner cylinder portion.
  • the corresponding insert 211, 221 is thus also beveled according to a principle similar to that described in WO2009 / 115686 and the force required for the connection of the first and second components 100, 200 is lowered.
  • FIG. 7D illustrates an assembly 1 according to a fourth embodiment of the invention not covered by the invention in which each of the third and fourth connection zones 210, 210 is provided with two conductive elements 215a, 215b, 225a, 225b.
  • An assembly 1 according to this fourth embodiment differs from an assembly 1 according to the first embodiment in that there is provided a first and a second conductive element 215a, 215b in contact with the first connection zone 210 and a third and fourth conductive elements 225a, 225b in contact with the second connection zone 220, and in that the first, second, third and fourth conductive elements 215a, 215b, 225a, 225b have a cylindrical shape of elliptical section.
  • the first, second, third and fourth conductive elements 215a, 215b, 225a, 225b are each in the form of an envelope cylindrical elliptical section, the axis of the foci being substantially perpendicular to a line passing through the third and fourth connection area 210, 220.
  • the first and the second conductive elements 215a, 215b are arranged in central symmetry with respect to the center of the first connection zone 210. In this way, the wall of each of the first and second conductive elements proximal to the center of the first connection zone 210 forms the first insert 211, while the wall of each of the first and second conductive elements 215a, 215b distal from the center of the first connection zone 210 forms the first hybridization barrier 212.
  • the third and fourth conductive elements 225a, 225b are arranged in a central symmetry with respect to the center of the second connection zone 220.
  • the sizing of the first to fourth conductive elements 215a, 215b, 225a, 225b is adapted so that:
  • the proximal wall portions of the first, second, third and fourth conductive members 215a, 215b, 225a, 225b are disposed within a corresponding surface for the first and second conductive members 215a, 215b at the orthogonally projected surface of the first ductile material stud 111, and for the third and fourth conductive elements 225a, 225b to the orthogonally projected surface of the second ductile material stud 121, when the first and the second connection areas 110, 120 are exposed. with respect to the third and the fourth connection zone 210, 220 respectively,
  • connection 210, 220 the distal wall portions of the first, second, third and fourth conductive elements 215a, 215b, 225a, 225b are arranged outside a corresponding surface, for the first and second conductive elements 215a, 215b to the orthogonally projected surface of the first stud of ductile material 111, and for the third and fourth conductive elements 215a, 225b to the orthogonally projected surface of the second stud 121, this when the first and the second connection zone 110, 120 are placed opposite the third and the fourth zone respectively. connection 210, 220.
  • connection elements 215a, 215b The method of forming connection elements 215a, 215b,
  • 225a, 225b according to this fourth embodiment not covered by the invention may be a method of the same type as that described in WO 2011/115686, the shape and positioning of the inserts formed during the process document WO2011 / 115686 having just to be adapted to match those of the connecting members 215a, 215b, 225a, 225b according to this fourth embodiment.
  • FIG. 7E illustrates an assembly 1 according to a fifth embodiment not covered by the invention in which the first and the second connection zone 110, 120 are respectively surrounded by a first and a second non-conductive element 216, 226 and are in contact with a first and a second conductive element 215, 225 respectively.
  • An assembly according to this fifth embodiment differs from an assembly according to the first embodiment in that it comprises a first and a second non-conducting element. 216, 226 forming respectively the first and the second hybridization barrier 212, 222, the first and the second conductive element 215, 225 forming the first and the second insert 211, 221.
  • the first and the second connection zone 210, 220 are respectively surrounded by the first and the second non-conductive element 216, 226.
  • Each of the first and second non-conductive elements 216, 226 is formed by a wall of non-conductive material. According to an advantageous possibility of this embodiment, and when the material of the sacrificial layer 310 is insulating, each of the first and the second insulating element 216, 226 is made of the same material as that of the sacrificial layer.
  • the first and the second conductive element 215, 225 are of the same type. than those of the second embodiment.
  • the first and second elements are arranged on a surface respectively corresponding to the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and second connection areas 110, 120 are facing each other. screw respectively the third and fourth connection area 210, 220.
  • the non-conductive elements 216, 226 being disposed outside the first and second connection zone 210, 220 are also outside the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and second second connection zone 110, 120 are placed opposite the third and the fourth connection zone 210, 220, respectively.
  • the method of forming conductive elements 215, 225 and non-conductive elements 216, 226 of a second component 200 according to this fifth embodiment not covered by the invention is similar to the forming method according to the second embodiment.
  • the method for forming conductive elements 215, 225 and non-conductive elements 216, 226 differs from a method for forming conductive elements 215, 225 according to the second embodiment in that during the suppression step of the sacrificial layer 310, the suppression is only partial, parts of the sacrificial layer 310 being retained to form the first and the second non-conductive element 216, 226.
  • the invention is not limited to these types of shape.
  • the invention covers any type of shape as long as each of the connection zones of the second component comprises:
  • At least one hybridization barrier 212, 222 positioned outside the orthogonally projected surfaces on the second connecting face of the corresponding ductile material stud 111, 121 when the connection zone 210, 220 is placed opposite the corresponding connection area 110, 120 of the first component 100 the first and second barriers 212, 222, 232, 242, 252, 262 respectively surrounding the first and second inserts 211, 221, 231, 241, 251, 261, the first insert and the first barrier being connected by a first base metal formed solely between these two last, the second insert and the second barrier being connected by a second metal base formed solely between the latter two.
  • FIG. 8 illustrates four examples of form inserts 211, 221 and hybridization barriers 212, 222 compatible with the invention.
  • the insert 211, 221 and the hybridization barrier 212, 222 are provided by a conductive element 215, 225 in the form of a cylindrical double wall envelope of cubic section.
  • the insert 211, 221 is provided by a cylindrical envelope of circular section while the hybridization barrier 212, 222is provided by a cylindrical envelope of square section, each of these envelopes being provided for a connection zone 210, 220, by a single conductive element 215.
  • the insert 211, 221 is provided by a cylindrical envelope of circular section while the hybridization barrier 212, 222 is provided by a cylindrical envelope of hexagonal section, each of these envelopes being provided, for a connection zone 210, 220, by a single conductive element 215.
  • the insert 211, 221 is provided by a solid cylinder of circular section while the hybridization barrier 212, 222 is provided by a cylindrical envelope of hexagonal section, each of this cylinder and this envelope being provided, for a given connection area 210, 220, by a single conductive element 215.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

The invention relates to a method for electrical connection by hybridisation of a first component (100) with a second component (200). The method comprises the following steps: forming pads of ductile material (111, 121) in contact respectively with connection zones (110, 120) of the first component (100); forming inserts (211, 221) of conductive material in contact with the connection zones (210, 220) of the second component (200); forming hybridisation barriers (212, 222) arranged between the inserts (211, 221) and electrically insulated from each other, said first and second hybridisation barriers (212, 222) serving as a barrier by containing the deformation of the pads of ductile material (111, 121) during the connection of the connection zones (210, 220) of the first component (100) with those of the second component (200). The invention also relates to an assembly (1) of two connected components (100, 200).

Description

PROCÉDÉ DE CONNECTION INTERCOMPOSANTS À DENSITÉ OPTIMISÉE  INTERCOMPOSING CONNECTION METHOD WITH OPTIMIZED DENSITY
DESCRIPTIONDESCRIPTION
DOMAINE TECHNIQUE TECHNICAL AREA
L'invention concerne le domaine de la micro-électronique et de l'optoélectronique et concerne plus particulièrement les méthodes de connexion de composants de la microélectronique et de l'optoélectronique entre eux et notamment les méthodes de connexion verticale (également connues sous les dénominations « hybridation » et « à puce retournée », et mieux connues par leur dénomination anglaise «flip-chip »). The invention relates to the field of microelectronics and optoelectronics and relates more particularly to the methods of connecting components of microelectronics and optoelectronics with each other and in particular the methods of vertical connection (also known by the names " hybridization "and" flipped chip ", and better known by their English name" flip-chip ").
L'invention a ainsi pour objet un procédé de connexion de deux composants entre eux et un ensemble comprenant deux composants connectés entre eux.  The invention thus relates to a method of connecting two components together and an assembly comprising two components connected to each other.
ÉTAT DE LA TECHNIQUE ANTÉRIEURE STATE OF THE PRIOR ART
Pour certaines applications, notamment l'optoélectronique, il peut être nécessaire de connecter des composants entre eux. C'est ainsi particulièrement le cas pour les applications à la détection de lumière dans lequel le composant de capture de lumière est généralement intégré dans un substrat en semiconducteur lll-V, tel qu'un substrat en nitrure de gallium GaN, alors que l'électronique de traitement pour traiter les signaux obtenus par le composant de capture est intégrée dans un substrat silicium Si. For some applications, such as optoelectronics, it may be necessary to connect components to each other. This is particularly the case for light detection applications in which the light capture component is generally integrated in a III-V semiconductor substrate, such as a gallium nitride GaN substrate, whereas the light capture component is generally integrated in a III-V semiconductor substrate, such as a gallium nitride GaN substrate. processing electronics for processing the signals obtained by the capture component is integrated in a silicon Si substrate.
Pour connecter ces composants entre eux, il est connu d'utiliser les méthodes de connexion verticale ou d'hybridation. Lors de la mise en œuvre d'un procédé selon ces méthodes et pour la connexion d'un premier et d'un deuxième composant, le premier et deuxième composant comportent respectivement une première et une deuxième face de connexion, la première face de connexion comportant au moins une première et une deuxième zone de connexion à connecter respectivement à au moins une troisième et une quatrième zone correspondante de la deuxième face de connexion. Le procédé comporte les étapes suivantes : - formation d'un premier et un deuxième plot en matériau ductile, tels qu'une première et deuxième bille d'indium, en contact respectif avec la première et la deuxième zone de connexion, To connect these components together, it is known to use the methods of vertical connection or hybridization. When implementing a method according to these methods and for connecting a first and a second component, the first and second components respectively comprise a first and a second connection face, the first connection face comprising at least a first and a second connection area to respectively connect to at least a third and a fourth corresponding area of the second connection face. The method comprises the following steps: forming a first and a second stud of ductile material, such as a first and second indium ball, in respective contact with the first and the second connection zone,
- formation d'un troisième et un quatrième plot en matériau ductile, tels qu'une troisième et une quatrième bille d'indium, en contact respectif avec la troisième et de la quatrième zone de connexion,  forming a third and a fourth pad of ductile material, such as a third and a fourth indium ball, in respective contact with the third and fourth connection zones,
- connexion de la première et de la deuxième zone de connexion avec respectivement la troisième et la quatrième zone de connexion, les première et deuxième zones de connexion étant en vis-à-vis des troisième et quatrième zones de connexion et la connexion se faisant par thermocompression.  connecting the first and second connection areas with respectively the third and fourth connection areas, the first and second connection areas being opposite the third and fourth connection areas and the connection being made by thermocompression.
Afin d'abaisser la température utilisée pendant l'étape de connexion et de diminuer la distance entre les zones de contact pour ainsi augmenter la densité des connexions, il est connu des documents WO2006/054005 et WO2009/115686 de prévoir en lieu et place des troisième et quatrième plots en matériau ductile, un premier et un deuxième insert en contact respectivement de la troisième et de la quatrième zone de connexion.  In order to lower the temperature used during the connection step and to reduce the distance between the contact zones so as to increase the density of the connections, it is known from the documents WO2006 / 054005 and WO2009 / 115686 to provide in place of third and fourth pads of ductile material, a first and a second insert respectively in contact with the third and fourth connection zone.
De cette manière, lors de l'étape de connexion des première et deuxième zones de connexion avec les troisième et quatrième zones de connexion, le premier et le deuxième insert va présenter une surface de contact relativement faible et adaptée pour venir s'insérer dans le plot en matériau ductile correspondant. Cela permet de réduire significativement les besoins en température et en pression pour l'obtention d'une telle insertion. Il est donc possible de réduire la température et la pression utilisées pendant la thermocompression et donc de contrôler au mieux l'écrasement du plot en matériau ductile.  In this way, during the step of connecting the first and second connection areas with the third and fourth connection areas, the first and the second insert will have a relatively small contact surface and adapted to fit into the plot of ductile material corresponding. This significantly reduces the temperature and pressure requirements for obtaining such an insertion. It is therefore possible to reduce the temperature and the pressure used during the thermocompression and therefore to better control the crushing of the stud of ductile material.
Néanmoins, même avec un tel contrôle de l'écrasement du plot en matériau ductile, la densité des connexions que permet d'obtenir un tel procédé de connexion reste limitée. En effet, si on prend un dimensionnement classique des plots de matériau ductile de 3,5 μιη de diamètre et des inserts du type micro-tube, tels que divulgués dans le document WO2009/115686, d'un diamètre de 2 μιη, il est nécessaire d'avoir un pas entre les zones de connexion supérieur à 5 μιη pour éviter tout risque de court-circuit entre deux zones de connexion adjacentes. Une telle contrainte est liée au fait que lors de la connexion, et donc de l'insertion des inserts dans les plots en matériau ductile, la déformation des plots en matériau ductile peut se faire en direction de zones adjacentes et entraîner des connexions, c'est-à-dire des courts-circuits, entre des plots en matériau ductile adjacents. Nevertheless, even with such a control of the crushing of the stud of ductile material, the density of the connections that makes it possible to obtain such a connection method remains limited. Indeed, if we take a conventional dimensioning of ductile material pads of 3.5 μιη in diameter and inserts of the micro-tube type, as disclosed in document WO2009 / 115686, with a diameter of 2 μιη, it is necessary to have a step between the connection areas greater than 5 μιη to avoid any risk of short circuit between two adjacent connection areas. Such a constraint is related to the fact that during the connection, and therefore the insertion of the inserts in the studs of ductile material, the deformation of the studs of ductile material can be in the direction of adjacent zones and cause connections, that is, short circuits between adjacent studs of ductile material.
Il est également connu du document US 2010/207266 de prévoir une barrière d'hybridation afin d'éviter tout risque de court-circuit entre deux zones de connexion adjacentes ceci même pour des densités importantes de connexion.  It is also known from US 2010/207266 to provide a hybridization barrier to avoid any risk of short circuit between two adjacent connection areas this even for significant connection densities.
Néanmoins, le procédé de fabrication enseigné par le document US 2010/207266 est relativement complexe puisqu'il nécessite un nombre important d'étape de dépôt notamment pour former la base, les inserts et les barrières d'hybridation et nécessite donc de coûteuses étapes d'alignement.  Nevertheless, the manufacturing method taught by document US 2010/207266 is relatively complex since it requires a large number of deposition steps, especially to form the base, the inserts and the hybridization barriers, and thus requires costly steps of 'alignment.
EXPOSÉ DE L'INVENTION STATEMENT OF THE INVENTION
La présente invention vise à remédier à cet inconvénient et a donc plus précisément pour objet de fournir un procédé de connexion de deux composants ne présentant pas de risque de court-circuit entre deux zones de connexion adjacentes ceci même pour des densités importantes de connexion, ledit procédé étant plus simple que ceux de l'art antérieur, tel que celui enseigné par le document US 2010/207266, qui ne présente pas de risque de court-circuit entre deux zones de connexion. The present invention aims to remedy this drawback and is therefore more precisely intended to provide a two-component connection method that does not present a risk of short-circuiting between two adjacent connection areas, this even for significant connection densities, said method being simpler than those of the prior art, such as that taught by US 2010/207266, which does not present a risk of short circuit between two connection areas.
L'invention concerne à cet effet un procédé de connexion électrique par hybridation d'un premier composant à un deuxième composant, le premier et deuxième composant comportant respectivement une première et une deuxième face de connexion, la première face de connexion comportant au moins une première et une deuxième zone de connexion à connecter respectivement à au moins une troisième et une quatrième zone de connexion correspondante de la deuxième face de connexion,  The invention relates for this purpose to a method of electrical connection by hybridization of a first component to a second component, the first and second components respectively comprising a first and a second connection face, the first connection face comprising at least a first and a second connection area to respectively connect to at least a third and a fourth corresponding connection area of the second connection face,
le procédé comportant les étapes suivantes :  the process comprising the following steps:
- formation d'un premier et d'un deuxième plot en matériau ductile métallique en contact respectif avec la première et la deuxième zone de connexion, - formation d'un premier et d'un deuxième insert en matériau conducteur en contact de respectivement la troisième et la quatrième zone de connexion, le premier et le deuxième insert étant destinés à être insérés dans respectivement le premier et le deuxième plot en matériau ductile, forming a first and a second stud of metal ductile material in respective contact with the first and the second connection zone, forming a first and a second insert made of conductive material in contact with the third and fourth connection areas respectively, the first and the second insert being intended to be inserted respectively into the first and second studs of ductile material; ,
le procédé comprenant en outre les étapes suivantes :  the method further comprising the steps of:
- formation sur la deuxième face de connexion d'au moins une première et une deuxième barrière d'hybridation disposées au moins en partie entre le premier et le deuxième insert et isolées électriquement l'une de l'autre, lesdites première et deuxième barrière d'hybridation étant toutes deux positionnées en dehors des surfaces projetées orthogonalement sur la deuxième face de connexion des premier et deuxième plots en matériau ductile lorsque la première et la deuxième zone de connexion sont mises en vis-à-vis de respectivement la troisième et la quatrième zone de connexion, la première et la deuxième paroi d'hybridation étant en dehors de respectivement la quatrième et la troisième zone de connexion ,  forming on the second connecting face of at least a first and a second hybridization barrier arranged at least partly between the first and the second insert and electrically insulated from each other, said first and second barrier of hybridization being both positioned outside the orthogonally projected surfaces on the second connecting face of the first and second pads made of ductile material when the first and the second connection zone are placed opposite the third and fourth respectively connection zone, the first and the second hybridization wall being outside respectively the fourth and the third connection zone,
- connexion de la première et de la deuxième zone de connexion avec respectivement la troisième et la quatrième zone de connexion par insertion du premier et du deuxième insert dans respectivement le premier et le deuxième plot en matériau ductile, les première et deuxième zones de connexion étant en vis-à-vis des troisième et quatrième zones de connexion et les première et deuxième barrière d'hybridation faisant office de barrière en contenant la déformation de respectivement le premier et le deuxième plot en matériau ductile en direction de respectivement la quatrième et de la troisième zone de connexion.  connecting the first and the second connection zone with respectively the third and the fourth insertion connection zone of the first and the second insert in respectively the first and the second stud of ductile material, the first and second connection zones being opposite the third and fourth connection zones and the first and second hybridization barriers serving as a barrier by containing the deformation of respectively the first and the second stud of ductile material towards the fourth and the fourth respectively. third connection area.
Le premier et le deuxième insert se présentent sous une forme creuse.  The first and the second insert are in a hollow form.
le procédé comportant en outre l'étape suivante :  the method further comprising the following step:
connexion de la première et de la deuxième zone de connexion avec respectivement la troisième et la quatrième zone de connexion par insertion du premier et du deuxième insert dans respectivement le premier et le deuxième plot en matériau ductile, les première et deuxième zones de connexion étant en vis-à-vis des troisième et quatrième zones de connexion et les première et deuxième barrière d'hybridation faisant office de barrière en contenant la déformation de respectivement le premier et le deuxième plot en matériau ductile en direction de respectivement la quatrième et la troisième zone de connexion. connecting the first and second connection areas with respectively the third and fourth insertion connection regions of the first and second inserts in the first and second ductile material pads, respectively, the first and second connection areas being in contact with each other. with respect to the third and fourth connection areas and the first and second hybridization barrier barrier office by containing the deformation respectively of the first and the second stud of ductile material towards respectively the fourth and the third connection zone.
L'étape de formation du premier et du deuxième insert comporte les sous-étapes suivantes :  The step of forming the first and the second insert comprises the following sub-steps:
dépôt d'une couche sacrificielle sur la deuxième face de connexion, gravure partielle, de la couche sacrificielle e manière à libérer une partie de chacune des zones de connexion correspondant à une portion de zone destinée à être présent entre l'insert et la barrière d'hybridation correspondant,  depositing a sacrificial layer on the second connection face, partial etching, of the sacrificial layer e in order to release a part of each of the connection zones corresponding to a portion of zone intended to be present between the insert and the barrier of corresponding hybridization,
dépôt d'une couche d'un matériau métallique destinée à former le premier et le deuxième insert et la première et la deuxième barrière d'hybridation,  depositing a layer of a metallic material for forming the first and the second insert and the first and second hybridization barrier,
polissage de la deuxième face de manière à supprimer la partie de la couche du matériau métallique qui est en contact avec la surface de la couche sacrificielle qui est opposée à la deuxième face de connexion et conserver les parties de la couche du matériau métallique 320 recouvrant les parties préalablement libérées, lesdites parties conservées formant ainsi les éléments conducteurs des zones de connexion,  polishing the second face so as to remove the portion of the layer of the metallic material which is in contact with the surface of the sacrificial layer which is opposite to the second connection face and retain the parts of the layer of the metal material 320 covering the previously released parts, said retained portions thus forming the conductive elements of the connection areas,
suppression de la couche sacrificielle.  removing the sacrificial layer.
Avec un tel procédé de connexion, il n'y a aucun risque de court- circuit entre la troisième et la quatrième zone quel que soit le pas entre la troisième et la quatrième zone de connexion. En effet, les première et deuxième barrières d'hybridation, en contenant la déformation des plots en matériau ductile en direction de l'autre plot en matériau ductile, suppriment tout risque de contact direct entre premier et le deuxième plot en matériau ductile. De plus, la première et la deuxième barrière d'hybridation étant isolées électriquement l'une de l'autre, cette isolation permet d'isoler électriquement l'un de l'autre le premier et le deuxième plot en matériau ductile.  With such a connection method, there is no risk of short circuit between the third and the fourth zone regardless of the pitch between the third and the fourth connection zone. Indeed, the first and second hybridization barriers, by containing the deformation of the ductile material pads towards the other pad of ductile material, eliminate any risk of direct contact between the first and the second pad of ductile material. In addition, the first and second hybridization barrier being electrically insulated from each other, this insulation is used to electrically isolate the first and the second stud of ductile material electrically from one another.
Avec de telles barrières d'hybridation, il est donc possible d'avoir une densité des connexions importante sans risque de court-circuit entre deux zones de connexion adjacentes.  With such hybridization barriers, it is therefore possible to have a high density of connections without risk of short circuit between two adjacent connection areas.
De plus, avec un tel procédé, les barrières d'hybridations sont formées en même temps que les inserts. Il en résulte un procédé simplifié vis-à-vis de ceux de l'art antérieur pour lesquels les barrières d'hybridation sont formées séparément des inserts. In addition, with such a method, the hybridization barriers are formed at the same time as the inserts. The result is a simplified process vis-à-vis those of the prior art for which the hybridization barriers are formed separately inserts.
Lors de l'étape de formation sur la deuxième face de connexion d'au moins une première et une deuxième barrière d'hybridation, la première et la deuxième barrière d'hybridation peuvent être formées respectivement en contact de la troisième et la quatrième zone de connexion.  During the formation step on the second connecting face of at least a first and a second hybridization barrier, the first and the second hybridization barrier can be formed respectively in contact with the third and the fourth zone of connection.
De cette manière, les première et deuxième barrières d'hybridation étant formées respectivement en contact avec la troisième et la quatrième zone de contact, l'espace entre les troisième et quatrième zones de connexion peut être minimisé puisqu'il n'est pas occupé par les barrières d'hybridation.  In this way, the first and second hybridization barriers being formed respectively in contact with the third and the fourth contact zone, the space between the third and fourth connection areas can be minimized since it is not occupied by hybridization barriers.
Lors de la formation de la première et de la deuxième barrière d'hybridation, les première et deuxième barrières d'hybridation peuvent être réalisées dans un matériau conducteur.  In forming the first and second hybridization barriers, the first and second hybridization barriers may be made of a conductive material.
Ainsi, la première et la deuxième barrière d'hybridation participent respectivement à la connexion électrique entre le premier plot de matériau ductile et la troisième zone de connexion et entre le deuxième plot de matériau ductile et la quatrième zone de connexion.  Thus, the first and second hybridization barriers participate respectively in the electrical connection between the first ductile material pad and the third connection zone and between the second ductile material pad and the fourth connection pad.
Les termes « conducteur » et « isolant », lorsqu'ils sont utilisés ci- dessus et dans le reste de ce document, doivent s'entendre en tant que « conducteur électrique » et « isolant électrique ».  The terms "conductor" and "insulator" when used above and in the rest of this document should be understood as "electrical conductor" and "electrical insulator".
Les étapes de formation du premier et du deuxième insert et de la première et de la deuxième barrière d'hybridation peuvent être réalisées simultanément, le premier et le deuxième insert et la première et la deuxième barrière d'hybridation étant réalisés dans le même matériau conducteur.  The steps of forming the first and second insert and the first and second hybridization barrier can be carried out simultaneously, the first and the second insert and the first and second hybridization barrier being made of the same conductive material. .
Ainsi, la connexion électrique entre le premier et le deuxième composant peut être obtenu avec un nombre d'étapes réduites.  Thus, the electrical connection between the first and the second component can be obtained with a reduced number of steps.
Lors des étapes de formation du premier et du deuxième insert et de la première et de la deuxième barrière d'hybridation, la formation du premier insert et de la première barrière d'hybridation consiste en la formation d'un premier élément conducteur en contact de la troisième zone de connexion, la formation du deuxième insert et de la deuxième barrière d'hybridation consiste en la formation d'un deuxième élément conducteur en contact de la quatrième zone de connexion. During the steps of forming the first and the second insert and the first and second hybridization barrier, the formation of the first insert and the first hybridization barrier consists in the formation of a first conductive element in contact with each other. the third connection zone, the formation of the second insert and the second hybridization barrier consists of forming a second conductive element in contact with the fourth connection zone.
Lors des étapes de formation du premier et du deuxième insert et de la première et de la deuxième barrière d'hybridation, le premier et le deuxième élément conducteur peuvent se présenter chacun sous la forme d'une première et d'une deuxième paroi cylindriques de révolution et concentriques, s'étendant chacune sensiblement perpendiculairement à la surface de zone de connexion correspondante, la première paroi étant entourée par la deuxième paroi et formant l'insert correspondant audit élément conducteur, la surface de la deuxième paroi en regard de la première paroi formant la barrière d'hybridation correspondant audit élément conducteur.  During the steps of forming the first and second inserts and the first and second hybridization barriers, the first and second conductive elements may each be in the form of first and second cylindrical walls of revolution and concentric, each extending substantially perpendicular to the corresponding connection area surface, the first wall being surrounded by the second wall and forming the insert corresponding to said conductive element, the surface of the second wall facing the first wall forming the hybridization barrier corresponding to said conductive element.
De cette manière, la déformation du premier et du deuxième plot en matériau ductile à lieu dans l'ensemble des directions du plan de connexion du premier et du deuxième composant. Il est donc possible d'optimiser la densité des connexions entre le premier et le deuxième composant selon toutes les directions du plan de connexion.  In this way, the deformation of the first and second stud of ductile material takes place in all directions of the connection plane of the first and the second component. It is therefore possible to optimize the density of the connections between the first and second components in all directions of the connection plane.
Les étapes de formation du premier et du deuxième insert et de la première et de la deuxième barrière d'hybridation peuvent comprendre les sous étapes suivantes :  The steps of forming the first and second insert and the first and second hybridization barrier may comprise the following substeps:
dépôt d'une couche sacrificielle sur la deuxième face de connexion,  depositing a sacrificial layer on the second connection face,
gravure partielle, de la couche sacrificielle de manière à libérer une partie de chacune des zones de connexion correspondant à la base annulaire de l'élément conducteur à former  partial etching of the sacrificial layer so as to release a part of each of the connection zones corresponding to the annular base of the conductive element to be formed
dépôt d'une couche d'un matériau métallique destiné à former les éléments conducteurs des zones de connexion,  depositing a layer of a metallic material intended to form the conductive elements of the connection zones,
polissage de la deuxième face de manière à supprimer la partie de la couche du matériau métallique qui est en contact avec la surface de la couche sacrificielle qui est opposée à la deuxième face de connexion et conserver les parties de la couche du matériau métallique recouvrant les parties préalablement libérées, lesdites parties conservées formant ainsi les éléments conducteurs des zones de connexion,  polishing the second face so as to remove the portion of the layer of the metallic material which is in contact with the surface of the sacrificial layer which is opposite to the second connection face and retain the parts of the layer of the metallic material covering the parts previously released, said conserved portions thereby forming the conductive elements of the connection areas,
suppression de la couche sacrificielle. Avec de telles étapes, il est possible de former le premier et le deuxième insert et la première et la deuxième barrière d'hybridation en utilisant des techniques de la microélectronique, telles que le procédé damascène. removing the sacrificial layer. With such steps, it is possible to form the first and the second insert and the first and second hybridization barrier using microelectronic techniques, such as the damascene method.
Lors de l'étape de formation de la première et de la deuxième barrière d'hybridation, la première et la deuxième barrière d'hybridation peuvent entourer respectivement le premier et le deuxième insert.  During the step of forming the first and the second hybridization barrier, the first and second hybridization barrier may respectively surround the first and the second insert.
De cette manière, la déformation du premier et du deuxième plot en matériau ductile a lieu dans l'ensemble des directions du plan de connexion du premier et du deuxième composant. Il est ainsi possible d'optimiser la densité des connexions entre le premier et le deuxième composant selon toutes les directions du plan de connexion.  In this way, the deformation of the first and second stud of ductile material takes place in all directions of the connection plane of the first and second component. It is thus possible to optimize the density of the connections between the first and second components in all directions of the connection plane.
Selon une possibilité non comprise dans le cadre de l'invention, Lors de l'étape de formation du premier et du deuxième insert, il peut être formé un premier et un deuxième élément conducteur formant respectivement le premier et le deuxième in sert,  According to a possibility not within the scope of the invention, during the step of forming the first and the second insert, it can be formed a first and a second conductive element forming respectively the first and second in sert serves,
et lors de l'étape de formation de la première et la deuxième barrière d'hybridation, il peut être formé au moins un premier élément non-conducteur au moins en partie positionné entre le premier et le deuxième insert, ledit au moins un premier élément isolant comportant une première surface en regard du premier insert formant la première barrière d'hybridation et une deuxième surface en regard du deuxième insert formant la deuxième barrière d'hybridation.  and during the step of forming the first and second hybridization barrier, at least a first non-conductive element at least partially positioned between the first and the second insert may be formed, the at least one first element insulator having a first surface facing the first insert forming the first hybridization barrier and a second surface facing the second insert forming the second hybridization barrier.
L'utilisation d'un tel élément isolant permet d'obtenir une bonne isolation électrique entre la troisième et la quatrième zone de connexion. Les risques de court-circuit entre la troisième et la quatrième zone de connexion sont ainsi particulièrement faibles.  The use of such an insulating element makes it possible to obtain good electrical insulation between the third and the fourth connection zone. The risks of short circuit between the third and the fourth connection zone are thus particularly low.
L'invention concerne également un ensemble de deux composants connectés l'un à l'autre par hybridation,  The invention also relates to a set of two components connected to one another by hybridization,
dans lequel le premier composant comporte une première face de connexion comprenant au moins une première et une deuxième zone de connexion, chacune des première et deuxième zone de connexion, ledit premier composant comportant en outre en contact un premier et un deuxième plot en matériau ductile en contact respectivement de la première et de la deuxième zone de connexion, wherein the first component has a first connection face comprising at least a first and a second connection area, each of the first and second connection areas, said first component further comprising contacting a first and a second pad of ductile material in contact respectively with the first and the second connection zone,
dans lequel le deuxième composant comporte une deuxième face de connexion comprenant au moins une troisième et une quatrième zone de connexion en vis-à-vis de respectivement la première et la deuxième zone de connexion, le deuxième composant comportant en outre un premier et un deuxième insert en contact de respectivement la troisième et de la quatrième zone de connexion, le premier et le deuxième insert étant respectivement inséré dans le premier et le deuxième plot en matériau ductile de la première et de la deuxième zone de connexion de manière à assurer une connexion électrique entre la première et la deuxième zone de connexion et respectivement la troisième et la quatrième zone de connexion,  in which the second component comprises a second connection face comprising at least a third and a fourth connection zone vis-à-vis respectively the first and the second connection zone, the second component further comprising a first and a second insert in contact with respectively the third and fourth connection zone, the first and the second insert being respectively inserted in the first and second ductile material stud of the first and the second connection zone so as to ensure a connection between the first and the second connection zone and the third and the fourth connection zone respectively,
le deuxième composant comportant en outre sur sa deuxième face de connexion une première et deuxième barrières d'hybridation disposées au moins en partie entre le premier et le deuxième insert, la première et la deuxième paroi d'hybridation étant en dehors de respectivement la quatrième et la troisième zone de connexion et faisant office de barrière à respectivement le premier et le deuxième plot en matériau ductile en direction de respectivement de la quatrième et de la troisième zone de connexion.  the second component further comprising on its second connecting face a first and second hybridization barrier arranged at least partly between the first and the second insert, the first and second hybridization wall being respectively outside the fourth and the third connection zone and acting as a barrier respectively to the first and the second stud of ductile material towards respectively the fourth and the third connection zone.
Le premier insert et la première barrière étant reliés par une première base métallique formée uniquement entre ces deux derniers, le deuxième insert et la deuxième barrière étant reliés par une deuxième base métallique formée uniquement entre ces deux derniers.  The first insert and the first barrier being connected by a first metal base formed solely between these two last, the second insert and the second barrier being connected by a second metal base formed solely between the latter two.
Un tel ensemble de composants bénéficie des avantages liés au procédé de connexion selon l'invention et ainsi peu susceptible de présenter des courts- circuits ceci même avec une densité de connexions entre le premier et le deuxième composants optimisée.  Such a set of components enjoys the advantages of the connection method according to the invention and thus unlikely to have short circuits this same with a density of connections between the first and the second optimized components.
La première et deuxième barrière d'hybridation et le premier et le deuxième insert peuvent être réalisés dans un matériau conducteur.  The first and second hybridization barrier and the first and the second insert may be made of a conductive material.
Le premier insert et la première barrière peuvent être fournis par un premier élément conducteur en contact avec la première zone de connexion, le deuxième insert et la deuxième barrière étant fournis par un deuxième élément conducteur en contact avec la deuxième zone de connexion. The first insert and the first barrier may be provided by a first conductive element in contact with the first connection zone, the second insert and the second barrier being provided by a second conductive member in contact with the second connection zone.
De cette manière, les barrières d'hybridation peuvent participer aux connexions entre la première et la troisième zone de connexion et entre la deuxième et la quatrième zone de connexion.  In this way, the hybridization barriers can participate in the connections between the first and the third connection zone and between the second and the fourth connection zone.
Selon une possibilité non comprise dans le cadre de l'invention, la première et la deuxième barrière d'hybridation peuvent être fournies par au moins un premier élément isolant, ledit au moins un premier élément isolant comportant une première surface en regard du premier insert formant la première barrière d'hybridation et une deuxième surface en regard du deuxième insert formant la deuxième barrière d'hybridation.  According to a possibility not within the scope of the invention, the first and second hybridization barrier may be provided by at least one first insulating element, said at least one first insulating element having a first surface facing the first insert forming the first hybridization barrier and a second surface facing the second insert forming the second hybridization barrier.
Un tel élément isolant permet d'obtenir une bonne isolation électrique entre la troisième et la quatrième zone de connexion. Les risques de court-circuit entre la troisième et la quatrième zone de connexion sont ainsi particulièrement faibles.  Such an insulating element makes it possible to obtain good electrical insulation between the third and the fourth connection zone. The risks of short circuit between the third and the fourth connection zone are thus particularly low.
BRÈVE DESCRIPTION DES DESSINS BRIEF DESCRIPTION OF THE DRAWINGS
La présente invention sera mieux comprise à la lecture de la description d'exemples de réalisation, donnés à titre purement indicatif et nullement limitatif, en faisant référence aux dessins annexés sur lesquels : The present invention will be better understood on reading the description of exemplary embodiments, given purely by way of indication and in no way limiting, with reference to the appended drawings in which:
la figure 1 est une vue en coupe schématique d'un ensemble de deux composants connectés l'un à l'autre par hybridation selon un premier mode de réalisation de l'invention, le premier composant comportant deux plots d'hybridation, le deuxième composant comportant deux éléments conducteurs formant inserts et barrières d'hybridation,  FIG. 1 is a schematic sectional view of a set of two components connected to each other by hybridization according to a first embodiment of the invention, the first component comprising two hybridization pads, the second component having two conductive elements forming inserts and hybridization barriers,
la figure 2 est une vue schématique en perspective représentant seul le deuxième composant de l'ensemble illustré sur la figure 1,  FIG. 2 is a schematic perspective view showing only the second component of the assembly illustrated in FIG. 1;
la figure 3 est une vue en coupe schématique rapprochée sur une zone de connexion des premier et deuxième composants de l'ensemble illustré sur la figure 1 avant la connexion, la figure 3 illustrant les contraintes de dimensionnement des barrières d'hybridation selon l'invention, les figures 4A à 4F illustrent les étapes de formation d'éléments conducteurs du deuxième composant de l'ensemble illustré sur la figure 1, FIG. 3 is a close schematic sectional view on a connection zone of the first and second components of the assembly illustrated in FIG. 1 before the connection, FIG. 3 illustrating the design constraints of the hybridization barriers according to the invention. , FIGS. 4A to 4F illustrate the steps of forming conductive elements of the second component of the assembly illustrated in FIG. 1,
la figure 5 illustre une vue schématique de dessus d'un deuxième composant d'un ensemble selon ce premier mode réalisation de l'invention pour lequel il est prévu douze connexions,  FIG. 5 illustrates a schematic view from above of a second component of an assembly according to this first embodiment of the invention for which twelve connections are provided,
la figure 6 illustre les principales étapes de connexion du premier composant avec le deuxième composants pour former un ensemble selon ce premier mode de réalisation, tel que celui illustré sur la figure 1,  FIG. 6 illustrates the main connection steps of the first component with the second component to form an assembly according to this first embodiment, such as that illustrated in FIG. 1,
les figure 7A à 7E illustrent des vues schématiques en coupe d'un ensemble et une vue de dessus du deuxième composant du même ensemble selon respectivement le premier à un sixième mode de réalisation de l'invention, la figure 7A correspondant à l'ensemble selon le premier mode de réalisation, la figure 7B correspondant à un ensemble selon un deuxième mode de réalisation non couvert par l'invention dans lequel les première et deuxième barrières d'hybridation sont formées par un élément conducteur isolant, la figure 7C correspond à un ensemble selon un quatrième mode de réalisation dans lequel chacun des inserts est un insert biseauté, la figure 7D correspondant à un ensemble selon un cinquième mode de réalisation non couvert par l'invention dans lequel chacune des zones de connexion comporte un premier et un deuxième élément conducteur cylindrique de section ellipsoïdale participant chacun à la formation de l'insert et de la barrière d'hybridation, la figure 7E correspondant à un ensemble selon un sixième mode de réalisation non couvert par l'invention dans lequel chacune des zones de connexion comporte un élément conducteur formant l'insert et un élément non-conducteur formant la barrière d'hybridation,  FIGS. 7A to 7E illustrate schematic cross-sectional views of an assembly and a top view of the second component of the same assembly respectively according to the first to a sixth embodiment of the invention, FIG. 7A corresponding to the assembly according to the first embodiment, Figure 7B corresponding to an assembly according to a second embodiment not covered by the invention wherein the first and second hybridization barriers are formed by an insulating conductive element, Figure 7C corresponds to a set according to a fourth embodiment in which each of the inserts is a beveled insert, FIG 7D corresponding to an assembly according to a fifth embodiment not covered by the invention wherein each of the connection areas comprises a first and a second conductive element cylindrical ellipsoidal section each participating in the formation of the insert and the hybridization barrier, FIG. 7E corresponding to an assembly according to a sixth embodiment not covered by the invention wherein each of the connection areas comprises a conductive element forming the insert and a non-conducting element forming the hybridization barrier,
- la figure 8 illustre quatre vues de dessus de différentes configurations de forme pour l'ensemble insert/barrière d'hybridation compatibles avec le premier mode réalisation, la vue référencée a) correspondant à des inserts et des barrières d'hybridation de section carrée, la vue référencée b) correspondant à des inserts circulaires et des barrières d'hybridation de section carrée, la vue référencée c) correspondant à des inserts circulaires et à des barrière d'hybridation de section hexagonale, la vue référencée d) correspond à des inserts circulaires pleins et des barrière d'hybridation de section hexagonale. FIG. 8 illustrates four views from above of different shape configurations for the insert / hybridization barrier assembly compatible with the first embodiment, the view referenced a) corresponding to inserts and square section hybridization barriers, the view referenced b) corresponding to circular inserts and hybridization barriers of square section, the view referenced c) corresponding to circular inserts and hexagonal section hybridization barriers, the referenced view d) corresponds to solid circular inserts and hexagonal section hybridization barriers.
Des parties identiques, similaires ou équivalentes des différentes figures portent les mêmes références numériques de façon à faciliter le passage d'une figure à l'autre.  Identical, similar or equivalent parts of the different figures bear the same numerical references so as to facilitate the passage from one figure to another.
Les différentes parties représentées sur les figures ne le sont pas nécessairement selon une échelle uniforme, pour rendre les figures plus lisibles.  The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable.
Les différentes possibilités (variantes et modes de réalisation) doivent être comprises comme n'étant pas exclusives les unes des autres et peuvent se combiner entre elles.  The different possibilities (variants and embodiments) must be understood as not being exclusive of each other and can be combined with one another.
EXPOSÉ DÉTAILLÉ DE MODES DE RÉALISATION PARTICULIERS DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
La figure 1 représente un ensemble 1 de deux composants 100, 200 connectés dont la connexion a été obtenue au moyen d'un procédé selon un premier mode de réalisation de l'invention. Ce premier composant 100 peut ainsi être, par exemple, un capteur optique, tel qu'une matrice CCD ou CMOS, ou un imageur, telle qu'une matrice LCD, à connecter à un deuxième composant, tel qu'une électronique de capteur optique ou d'imageur. Ainsi un tel procédé a pour but, comme le montre la figure 1, de connecter des structures semiconductrices 102 du premier composant 100 avec des structures semiconductrices 202 du deuxième composant. FIG. 1 represents an assembly 1 of two connected components 100, 200 whose connection has been obtained by means of a method according to a first embodiment of the invention. This first component 100 may thus be, for example, an optical sensor, such as a CCD or CMOS matrix, or an imager, such as an LCD matrix, to be connected to a second component, such as an optical sensor electronics. or imager. Thus, such a method is intended, as shown in FIG. 1, to connect semiconductor structures 102 of the first component 100 with semiconductor structures 202 of the second component.
Le premier composant 100 peut ainsi comporter un support semiconducteur d'un premier type, tel qu'un support en matériau semiconducteur lll-IV tel qu'un support du type nitrure de gallium/corindon, le deuxième composant comportant un support semiconducteur d'un deuxième type, tel qu'un support silicium Si ou germanium Ge.  The first component 100 may thus comprise a semiconductor support of a first type, such as a support in semiconductor material III-IV such as a support of the gallium nitride / corundum type, the second component comprising a semiconductor support of a second type, such as Si silicon support or Ge germanium.
Pour permettre la connexion du premier et du deuxième composant To allow the connection of the first and second components
100, 200, un tel ensemble 1 de deux composants 100, 200 comporte : 100, 200, such a set of two components 100, 200 comprises:
le premier composant 100 comportant une première face de connexion 101 comprenant au moins une première et une deuxième zone de connexion 110, 120, ledit premier composant 100 comportant en outre un premier et un deuxième plot en matériau ductile 111, 121 en contact respectivement de la première et de la deuxième zone de connexion 110, 120, the first component 100 having a first connection face 101 comprising at least a first and a second connection zone 110, 120, said first component 100 further comprising a first and a second plot of ductile material 111, 121 in contact respectively with the first and the second connection zone 110, 120,
le deuxième composant 200 comportant une deuxième face de connexion 201 comprenant au moins une troisième et une quatrième zone de connexion 210, 220 en vis-à-vis de respectivement la première et la deuxième zone de connexion 110, 120, le deuxième composant 200 comportant en outre un premier et un deuxième insert 211, 221 en contact de respectivement la troisième et de la quatrième zone de connexion 210, 220, le premier et le deuxième insert 211, 221 étant respectivement insérés dans le premier et le deuxième plot en matériau ductile 111, 121, le deuxième composant 200 comportant en outre sur sa deuxième face de connexion une première et deuxième barrière d'hybridation 212, 222 disposées au moins en partie entre le premier et le deuxième insert 211, 221 et étant isolées électriquement l'une de l'autre, la première et la deuxième paroi d'hybridation 212, 222 étant en dehors de respectivement la quatrième et la troisième zone de connexion 220, 210 et faisant office de barrière à respectivement le premier et le deuxième plot en matériau ductile 111, 121 en direction de respectivement de la quatrième et de la troisième zone de connexion 210, 220.  the second component 200 comprising a second connection face 201 comprising at least a third and a fourth connection zone 210, 220 vis-à-vis respectively the first and the second connection zone 110, 120, the second component 200 comprising in addition a first and a second insert 211, 221 in contact respectively with the third and the fourth connection zone 210, 220, the first and the second insert 211, 221 being respectively inserted into the first and second stud of ductile material 111, 121, the second component 200 further comprising on its second connection face a first and second hybridization barrier 212, 222 arranged at least partly between the first and the second insert 211, 221 and being electrically isolated from one another. on the other, the first and the second hybridization wall 212, 222 being outside respectively the fourth and the third connection zone 220, 210 and Barrier, respectively, to the first and second ductile material studs 111, 121 respectively to the fourth and third connection zones 210, 220.
Le premier composant 100 comporte sur la première face de connexion 101 la première et la deuxième zone de connexion 110, 120. Chacune de la première et de la deuxième zone de connexion 110, 120 est formée par une couche métallique faisant office de contact pour la structure 101. Lorsqu'une connexion par soudure est recherchée, les couches métalliques formant la première et la deuxième zone de connexion 110, 120 sont réalisées dans un matériau mouillable par le matériau des premier et deuxième plots en matériau ductile 111, 121. Bien entendu, une telle caractéristique n'est pas nécessaire lorsqu'une connexion par déformation est recherchée.  The first component 100 has on the first connection face 101 the first and the second connection zone 110, 120. Each of the first and the second connection zone 110, 120 is formed by a metal layer acting as contact for the When a weld connection is sought, the metal layers forming the first and the second connection zone 110, 120 are made of a material that can be wetted by the material of the first and second pads made of ductile material 111, 121. such a characteristic is not necessary when a deformation connection is sought.
Chacune des couches métalliques formant la première et la deuxième zone de connexion 110, 120 peut être réalisée dans un matériau sélectionné dans le groupe compostant l'or Au, l'aluminium Al, l'argent Ag, le nickel Ni, le platine Pt, le palladium Pd et leurs alliages.  Each of the metal layers forming the first and the second connection zone 110, 120 may be made of a material selected from the group consisting of Au gold, Al aluminum, Ag silver, Ni nickel, Pt platinum, palladium Pd and their alloys.
Selon une possibilité de l'invention non illustrée dans laquelle une connexion par soudure est recherchée, ces mêmes couches métalliques formant la première et la deuxième zone de connexion 110, 120 peuvent être formée d'une première sous-couche métallique pour contacter l'une des zones de la première structure 102 et d'une deuxième sous-couche métallique recouvrant la première couche métallique et étant réalisée dans un matériau mouillable au matériau duquel sont réalisés les plots en matériau ductile 111, 121. According to a possibility of the invention not illustrated in which a connection by welding is sought, these same metal layers forming the first and second connection areas 110, 120 may be formed of a first metal sub-layer to contact one of the areas of the first structure 102 and a second metal sub-layer covering the first metal layer and being realized in a wettable material to the material of which are formed the pads of ductile material 111, 121.
Par matériau mouillable par le matériau dans lequel sont réalisés les premier et deuxième plots en matériau ductile 111, 121, il doit être entendu ici et dans le reste de ce document que le matériau mouillable présente une mouillabilité totale vis-à- vis du matériau des plots en matériau ductile. Autrement dit, le coefficient d'étalement S du matériau des plots en matériau ductile, lorsqu'il est à l'état liquide, est strictement positif.  By material wettable by the material in which are made the first and second pads of ductile material 111, 121, it should be understood here and in the remainder of this document that the wettable material has a total wettability vis-à-vis the material of studs of ductile material. In other words, the spreading coefficient S of the material of the pads of ductile material, when in the liquid state, is strictly positive.
Les première et deuxième zones de connexion 110, 120 sont munies respectivement du premier et du deuxième plot en matériau ductile 111, 121. Chacun du premier et du deuxième plot en matériau ductile 111, 121 est réalisé dans un matériau métallique ductile tel que de l'indium. Ainsi, le matériau du premier et deuxième plot en matériau ductile 111, 121 peut être sélectionné dans le groupe comportant l'indium in, l'étain Sn, l'aluminium Al, le cuivre Cu, le zinc Zn et leurs alliages, tels que les alliages de l'étain que sont les alliages plomb-étain SnPb et les alliages cuivre-argent-étain SnAgCu.  The first and second connection zones 110, 120 are respectively provided with the first and second studs made of ductile material 111, 121. Each of the first and second studs made of ductile material 111, 121 is made of a ductile metallic material such as aluminum. 'indium. Thus, the material of the first and second stud of ductile material 111, 121 may be selected from the group comprising indium in, tin Sn, aluminum Al, copper Cu, zinc Zn and their alloys, such as the tin alloys SnPb lead-tin alloys and SnAgCu copper-silver-tin alloys.
Ainsi si on prend l'exemple d'une connexion par soudure, le premier et le deuxième plot en matériau ductile peuvent être réalisés en indium In, en étain Sn ou l'un de ses alliages tels que les alliages plomb-étain SnPb et les alliages cuivre-argent-étain SnAgCu, la première et le deuxième zones de connexion pouvant être réalisées en or Au.  Thus, if we take the example of a solder connection, the first and the second stud of ductile material can be made of indium In, Sn tin or one of its alloys such as lead-tin alloys SnPb and copper-silver-tin alloys SnAgCu, the first and second connection zones that can be made in Au gold.
Par contre, si on prend l'exemple d'une connexion obtenue par déformation, le premier et le deuxième plot en matériau ductile peuvent être réalisés en aluminium Al, en cuivre Cu ou en zinc Zn, la première et le deuxième zones de connexion pouvant être réalisées en aluminium Al, en cuivre Cu ou en zinc Zn.  On the other hand, if one takes the example of a connection obtained by deformation, the first and the second stud made of ductile material may be made of aluminum Al, copper Cu or zinc Zn, the first and the second connection zones being be made of Al aluminum, Cu copper or Zn zinc.
On peut voir sur la figure 2 que le deuxième composant 200 comporte sur la deuxième face de connexion 201 la troisième et la quatrième zone de connexion 210, 220,. Chacune de ces troisième et quatrième zones de connexion 210, 220 est formée par une couche métallique faisant office de contact pour la structure 201. Lorsqu'une connexion par soudure est recherchée, les couches métalliques formant la troisième et la quatrième zone de connexion 210, 220 sont réalisées dans un matériau mouillable par le matériau des premier et deuxième plots en matériau ductilelll, 121. Chacune des couches métalliques formant la troisième et la quatrième zone de connexion 210, 220 peut être réalisée dans un matériau sélectionné dans le groupe compostant l'or Au, l'aluminium Al, l'argent Ag, le nickel Ni, le platine Pt, le palladium Pd et leurs alliages. It can be seen in FIG. 2 that the second component 200 has on the second connection face 201 the third and the fourth connection zone 210, 220,. Each of these third and fourth connection areas 210, 220 is formed by a metal layer acting as contact for the structure 201. When a solder connection is desired, the metal layers forming the third and fourth connection areas 210, 220 are made of a material wettable by the material of the first and second pads ductilelll material, 121. Each of the metal layers forming the third and fourth connection zone 210, 220 may be made of a material selected from the group consisting of Au gold, Al aluminum, Ag silver, Ni nickel, Pt platinum, Pd palladium and their alloys. .
Bien entendu, selon une possibilité de l'invention non illustrée dans laquelle une connexion par soudure est recherchée, et de façon similaire aux première et deuxième zones de connexion 110, 120, les couches métalliques formant la troisième et la quatrième zones de connexion 210, 220 peuvent également être formées d'une première sous-couche métallique pour contacter l'une des zones de la deuxième structure 202 et d'une deuxième sous-couche métallique recouvrant la première couche métallique et étant réalisée dans un matériau mouillable au matériau duquel sont réalisés les plots en matériau ductile 111, 121.  Of course, according to a possibility of the invention not illustrated in which a connection by welding is sought, and similarly to the first and second connection areas 110, 120, the metal layers forming the third and fourth connection areas 210, 220 may also be formed of a first metal sub-layer for contacting one of the zones of the second structure 202 and a second metal sub-layer covering the first metal layer and being made of a wettable material whose material is made the pads of ductile material 111, 121.
La troisième et la quatrième zone de connexion 210, 220 sont respectivement munies d'un premier et d'un deuxième élément conducteur 215, 225. Le premier élément 215 comporte à la fois le premier insert 211 et la première barrière d'hybridation 212, tandis que le deuxième élément 225 comporte à la fois le deuxième insert 221 et la deuxième barrière d'hybridation 222. Le premier et le deuxième élément conducteur 215, 225, comme le montre la figure 2, se présentent chacun sous la forme d'une première et d'une deuxième paroi cylindriques de révolution et concentriques et qui s'étendent perpendiculairement à la surface de la zone de connexion correspondante 210, 220. Ainsi la première et la deuxième paroi cylindrique de chacun des premier et deuxième éléments conducteurs 215, 225 présentent leur axe de révolution perpendiculaire à cette même surface de la zone de connexion correspondante 210, 220. Pour chacun des premier et deuxième éléments conducteurs 215, 225, la première paroi est interne à la deuxième paroi, c'est-à-dire qu'elle est entourée par la deuxième paroi. Chacun des premier et deuxième éléments conducteurs 215, 225 comporte également une base annulaire en contact avec la zone de connexion 210, 220 correspondante et reliant l'une à l'autre la première et la deuxième paroi dudit élément conducteur 215, 225. Les premier et deuxième éléments conducteurs 215, 225 sont réalisés dans un matériau métallique sélectionné dans le groupe comportant le cuivre Cu, le Titane Ti, le tungstène W, le Chrome Cr, le nickel Ni, le platine Pt, le palladium et leurs alliages, tels que le siliciure de tungstène WSi, le nitrure de tungstène WN et le nitrure de titane TiN. Selon une possibilité avantageuse de l'invention, le matériau métallique du premier et deuxième élément conducteur 215, 225 est du cuivre Cu. The third and the fourth connection zone 210, 220 are respectively provided with a first and a second conductive element 215, 225. The first element 215 comprises both the first insert 211 and the first hybridization barrier 212, while the second element 225 includes both the second insert 221 and the second hybridization barrier 222. The first and the second conductive element 215, 225, as shown in FIG. 2, are each in the form of a first and second cylindrical walls of revolution and concentric and which extend perpendicular to the surface of the corresponding connection area 210, 220. Thus the first and the second cylindrical wall of each of the first and second conductive elements 215, 225 have their axis of revolution perpendicular to the same surface of the corresponding connection area 210, 220. For each of the first and second conductive elements 215, 225, the first wall is internal to the second wall, that is to say, it is surrounded by the second wall. Each of the first and second conductive elements 215, 225 also comprises an annular base in contact with the corresponding connection zone 210, 220 and connecting the first and the second wall of said conductive element 215, 225 to each other. The first and second conductive elements 215, 225 are made of a metallic material selected from the group comprising copper Cu, titanium Ti, tungsten W, chromium Cr, nickel Ni, platinum Pt, palladium and their alloys, such as tungsten silicide WSi, tungsten nitride WN and titanium nitride TiN. According to an advantageous possibility of the invention, the metallic material of the first and second conductive element 215, 225 is Cu copper.
Selon une possibilité de l'invention, chacun des éléments conducteurs 215, 225 peut en outre comporter un revêtement métallique, tel qu'une couche d'or, afin de protéger de l'oxydation le matériau métallique dont il est réalisé.  According to a possibility of the invention, each of the conductive elements 215, 225 may further comprise a metal coating, such as a gold layer, in order to protect the metal material of which it is made from oxidation.
Le premier et le deuxième élément conducteur 215, 225 sont dimensionné de tel façon que :  The first and second conductive elements 215, 225 are dimensioned such that:
la première paroi du premier et du deuxième élément conducteur 215, 225 sont disposées à l'intérieur d'une surface correspondant respectivement à la surface projetée orthogonalement du premier et du deuxième plot en matériau ductile 111, 121 lorsque la première et la deuxième zone de connexion 110, 120 sont mises en vis-à-vis de respectivement la troisième et la quatrième zone de connexion 210, 220,  the first wall of the first and second conductive elements 215, 225 are disposed within a surface respectively corresponding to the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and second connection 110, 120 are placed opposite the third and the fourth connection zone 210, 220 respectively,
la deuxième paroi du premier et du deuxième élément conducteur sont disposées en dehors d'une surface correspondant respectivement à la surface projetée orthogonalement du premier et du deuxième plot en matériau ductile 111, 121 lorsque la première et la deuxième zone de connexion 110, 120 sont mises en vis- à-vis de respectivement la troisième et la quatrième zone de connexion 210, 220.  the second wall of the first and second conductive elements are arranged outside a surface respectively corresponding to the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and the second connection zone 110, 120 are connected to the third and fourth connection areas 210, 220, respectively.
On notera de plus que le premier et le deuxième élément conducteur 215, 225, étant formés en contact de respectivement la troisième et la quatrième zone 210, 220 de connexion, la deuxième paroi du premier et du deuxième élément conducteur 215, 225, par un tel dimensionnement, est en dehors de respectivement la quatrième et la troisième zone de connexion 220, 210. De la même façon, les premier et deuxième éléments conducteurs 215, 225 sont à distance l'un de l'autre, ceci sans qu'il existe une quelconque connexion électrique entre eux. Le premier et le deuxième élément conducteur sont donc isolés électriquement l'un de l'autre. Ainsi, les première et deuxième barrières d'hybridation 212, 222, formées respectivement par la deuxième paroi du premier et du deuxième élément conducteur 215, 225, sont également isolées électriquement l'une de l'autre. It will further be noted that the first and the second conductive elements 215, 225 being formed in contact with respectively the third and the fourth connection zone 210, 220, the second wall of the first and second conductive elements 215, 225, by a such dimensioning, is outside respectively the fourth and third connection zone 220, 210. In the same way, the first and second conductive elements 215, 225 are at a distance from each other, this without it there is any electrical connection between them. The first and second conductive elements are electrically isolated from each other. So the first and second Hybridization barriers 212, 222 formed respectively by the second wall of the first and second conductive elements 215, 225, are also electrically insulated from each other.
Ainsi, avec un tel dimensionnement et comme illustré sur la figure 1, la première paroi du premier et du deuxième élément conducteur 215, 225 forment respectivement le premier et le deuxième insert 211, 221, et la surface interne de la deuxième paroi du premier et du deuxième élément conducteur 215, 225 forment respectivement la première et la deuxième barrière d'hybridation 212, 222.  Thus, with such a dimensioning and as illustrated in FIG. 1, the first wall of the first and second conductive elements 215, 225 respectively form the first and the second inserts 211, 221, and the internal surface of the second wall of the first and second the second conductive element 215, 225 form respectively the first and the second hybridization barrier 212, 222.
On notera que d'un point de vue pratique et comme illustré sur la figure 3, de telles conditions de dimensionnement pourront généralement être obtenues en suivants les conditions suivantes :  It should be noted that from a practical point of view and as illustrated in FIG. 3, such sizing conditions can generally be obtained by following the following conditions:
(1) dl0 < d20 < d25  (1) d10 <d20 <d25
(2) hl0 ~ h20,  (2) hl0 ~ h20,
dlO et d25, étant respectivement le diamètre extérieur de la première paroi et le diamètre intérieur de la deuxième paroi de dudit élément conducteur 215, 225 parmi le premier et le deuxième élément conducteur 215, 225, hlO la hauteur desdites première et deuxième paroi, d20, h20 la dimension latérale maximale et la hauteur maximale du plot en matériau ductile 111, 121 correspondant audit élément conducteur 215, 225.  d10 and d25, being respectively the outer diameter of the first wall and the inside diameter of the second wall of said conductive element 215, 225 among the first and the second conductive element 215, 225, h10 the height of said first and second walls, d20 , h20 the maximum lateral dimension and the maximum height of the pad of ductile material 111, 121 corresponding to said conductive element 215, 225.
Bien entendu, ces dimensions en ce qui concerne les plots en matériau ductile 111, 121, correspondent aux dimensions de ces derniers avant connexion du premier composant 100 avec le deuxième composant 200, le plot en matériau ductile 111, 121 étant sujet à déformation lors de la connexion. De la même façon, un tel dimensionnement est valable pour une configuration dans laquelle lors de l'assemblage du premier et du deuxième composant 100, 200, le plot en matériau ductile 111, 121 est mis en regard de l'élément conducteur correspondant. Le diamètre extérieur dlO de la première paroi et le diamètre intérieur d25 de la deuxième paroi des premier et deuxième éléments conducteurs 215, 225 peuvent bien entendu être choisis pour compenser un éventuellement désalignement entre l'élément conducteur 215, 225 et le plot en matériau ductile 111, 121 correspondant, ceci en sous-dimensionnant le diamètre extérieur de la première paroi et en sur-dimensionnant le diamètre intérieur de la deuxième paroi vis-à- vis des dimensions du plot en matériau ductile 111, 121. Of course, these dimensions as regards the studs of ductile material 111, 121, correspond to the dimensions of the latter before connection of the first component 100 with the second component 200, the stud of ductile material 111, 121 being subject to deformation during the connection. In the same way, such a dimensioning is valid for a configuration in which during the assembly of the first and the second component 100, 200, the stud made of ductile material 111, 121 is placed opposite the corresponding conducting element. The outer diameter d 10 of the first wall and the inner diameter d 25 of the second wall of the first and second conductive elements 215, 225 can of course be chosen to compensate for any misalignment between the conductive element 215, 225 and the stud made of ductile material. 111, 121 corresponding, this by undersizing the outer diameter of the first wall and over-dimensioning the inner diameter of the second wall vis-à-vis the dimensions of the stud of ductile material 111, 121.
Les figures 4A à 4E illustrent un procédé de formation d'éléments conducteurs 235, 245, 255, 265, sur les zones de connexion 230, 240, 250, 260 d'un deuxième composant 200 selon ce premier mode de réalisation, ledit composant qui comprend deux deuxièmes structures 202a, 202b, chacune connectée au moyen de deux zones de connexion respectives 230, 240, 250, 260. Un tel procédé de formation comporte les étapes suivantes :  FIGS. 4A to 4E illustrate a process for forming conductive elements 235, 245, 255, 265, on the connection zones 230, 240, 250, 260 of a second component 200 according to this first embodiment, said component which comprises two second structures 202a, 202b, each connected by means of two respective connection zones 230, 240, 250, 260. Such a formation method comprises the following steps:
fourniture, comme illustré sur la figure 4A du deuxième composant 200, de chacune des zones de connexion 230, 240, 250, 260 formée par une couche métallique respective,  supplying, as illustrated in FIG. 4A of the second component 200, each of the connection zones 230, 240, 250, 260 formed by a respective metal layer,
dépôt, comme illustré sur la figure 4B, d'une couche sacrificielle 310 destinée à former un masque dur, ladite couche sacrificielle présentant une épaisseur supérieure à la hauteur hlO recherchée pour les premières et deuxièmes des éléments conducteurs 215, 225 à former,  deposition, as illustrated in FIG. 4B, of a sacrificial layer 310 intended to form a hard mask, said sacrificial layer having a thickness greater than the desired height h10 for the first and second conductive elements 215, 225 to be formed,
gravure partielle, comme illustré sur la figure 4C, de la couche sacrificielle 310 de manière à libérer la partie 311, 312 de chacune des zones de connexion 320 correspondant à la base annulaire de l'élément conducteur à former,  partial etching, as illustrated in FIG. 4C, of the sacrificial layer 310 so as to release the part 311, 312 of each of the connection zones 320 corresponding to the annular base of the conductive element to be formed,
dépôt, tel qu'illustré sur la figure 4D, d'une couche du matériau métallique 320 destinée à former les éléments conducteurs 235, 245, 255, 265 des zones de connexion 230, 240, 250, 260,  deposition, as illustrated in FIG. 4D, of a layer of the metallic material 320 intended to form the conductive elements 235, 245, 255, 265 of the connection zones 230, 240, 250, 260,
polissage, tel qu'illustré sur la figure 4E, de la couche du matériau métallique 320 et d'une partie de la couche sacrificielle 310 de manière à supprimer la partie de la couche du matériau métallique 320 recouvrant la couche sacrificielle 310 et conserver les parties de la couche du matériau métallique recouvrant les parties 311 préalablement libérées, lesdites parties de la couche du matériau métallique 320 conservées formant ainsi les éléments conducteurs 235, 245, 255, 265 des zones de connexion 230, 240, 250, 260,  polishing, as illustrated in FIG. 4E, of the layer of the metallic material 320 and of a portion of the sacrificial layer 310 so as to remove the part of the layer of the metallic material 320 covering the sacrificial layer 310 and to retain the parts of the layer of the metallic material covering the previously released portions 311, said parts of the layer of the metallic material 320 conserved thus forming the conducting elements 235, 245, 255, 265 of the connection zones 230, 240, 250, 260,
suppression de la couche sacrificielle 310, telle qu'illustré sur la figure 4F. Il est à noter qu'un tel procédé, ceci notamment lorsque les matériaux de la couche sacrificielle 310 et de la couche du matériau métallique 320 sont respectivement du dioxyde de silicium Si02 et du cuivre Cu, présente comme avantage de faire appel à une technique classique et parfaitement maîtrisée de l'industrie de la microélectronique qu'est la technique de gravure damascène. Il est ainsi possible de réaliser avec un tel procédé des deuxièmes composants comprenant un grand nombre de zones de connexion 230, 240, 250, 260, 270, 280 organisées, par exemple et comme illustré sur la figure 5, sous la forme d'une matrice avec une densité des connexions optimisée. Le dimensionnement et le positionnement de ces zones de connexion sont alors maîtrisés à l'échelle de la centaine de nanomètres et il est possible d'envisager des pas entre les zones inférieurs à 5 μιη. removing the sacrificial layer 310, as shown in Figure 4F. It should be noted that such a method, especially when the materials of the sacrificial layer 310 and of the layer of the metallic material 320 are silicon dioxide Si0 2 and copper Cu respectively, has the advantage of using a technique classic and perfectly mastered of the microelectronics industry that is the damascene etching technique. It is thus possible to produce, with such a method, second components comprising a large number of connection zones 230, 240, 250, 260, 270, 280 organized, for example and as illustrated in FIG. 5, in the form of a matrix with optimized connection density. The dimensioning and positioning of these connection areas are then controlled at the scale of one hundred nanometers and it is possible to consider steps between areas less than 5 μιη.
En effet, on peut prendre l'exemple concret pour un tel pas de 5 μιη, d'un écran de format WUXGA, c'est-à-dire présentant une résolution de 1920x1080 et nécessitant plus de 2 millions de connexions, réalisé dans un nitrure de gallium GaN en tant que premier composant 100 à connecter à un deuxième composant 200 qui est un circuit de commande en technologie CMOS sur silicium. Pour permettre la connexion de cet écran en tant que premier composant 100, chacune des zones de connexions 111 du premier composant 100 peut être équipée, en référence à la figure 3, d'un plot en matériau ductile 111 respectif présentant un diamètre d20 de 3 μιη et une hauteur h20 de 2,5 μιη. Le circuit de commande peut lui comporter sur chacun de ces zones de connexion 210 un élément conducteur 215 d'une hauteur de 2,5 μιη et dont les diamètres extérieur de l'insert et intérieur de la barrière d'hybridation d25, dlO sont respectivement égaux à 1,5 μιη et 3,5 μιη.  Indeed, we can take the concrete example for such a step of 5 μιη, a screen WUXGA format, that is to say having a resolution of 1920x1080 and requiring more than 2 million connections, realized in a gallium nitride GaN as the first component 100 to connect to a second component 200 which is a control circuit in CMOS technology on silicon. To allow the connection of this screen as the first component 100, each of the connection areas 111 of the first component 100 may be equipped, with reference to FIG. 3, with a respective ductile material stud 111 having a diameter d20 of 3 μιη and a height h20 of 2.5 μιη. The control circuit may comprise on each of these connection zones 210 a conductive element 215 with a height of 2.5 μιη and whose outside diameters of the insert and inside of the hybridization barrier d25, d10 are respectively equal to 1.5 μιη and 3.5 μιη.
De cette manière, les équations (1) et (2) étant respectées, les plus de 2 millions de connexion entre l'écran et le circuit de commande peuvent se faire avec un pas de 5 μιη sans risque de court-circuit entre deux zones de connexion adjacentes, ceci grâce aux barrières d'hybridation qui vont permettre de contenir la déformation des plots en matériau ductile 211, 221. Les premier et deuxième composants 100, 200 selon ce premier mode de réalisation peuvent être connectés l'un à l'autre selon un procédé de connexion. Un tel procédé de connexion comprend les étapes suivantes : In this way, equations (1) and (2) being respected, the more than 2 million connections between the screen and the control circuit can be done with a step of 5 μιη without risk of short circuit between two zones. adjacent connection, this thanks to the hybridization barriers which will allow to contain the deformation of the pads of ductile material 211, 221. The first and second components 100, 200 according to this first embodiment can be connected to one another according to a connection method. Such a connection method comprises the following steps:
- formation du premier et du deuxième plot en matériau ductile 111, 121 en contact respectif avec la première et la deuxième zone de connexion 110, 120,  forming the first and second studs made of ductile material 111, 121 in respective contact with the first and the second connection zone 110, 120,
- formation des premier et deuxième éléments conducteurs en contact de respectivement la troisième et la quatrième zone de connexion 210, 220 de manière à ainsi former le premier et le deuxième insert 211, 221 en matériau conducteur, et la première et la deuxième barrière d'hybridation 212, 222 disposées au moins en partie entre le premier et le deuxième insert et isolées électriquement l'une de l'autre,  forming the first and second conductive elements in contact with respectively the third and the fourth connection zone 210, 220 so as to thus form the first and second inserts 211, 221 made of conductive material, and the first and the second barrier of hybridization 212, 222 arranged at least partly between the first and the second insert and electrically insulated from each other,
- connexion de la première et de la deuxième zone de connexion 110, 120 avec respectivement la troisième et la quatrième zone de connexion 210, 220 par insertion du premier et deuxième insert 211, 221 dans respectivement le premier et le deuxième plot en matériau ductile 111, 121, les première et deuxième zones de connexion 110, 120 étant en vis-à-vis des troisième et quatrième zones de connexion 210, 220 et les première et deuxième barrières d'hybridation 212, 222 faisant office de barrière en contenant la déformation de respectivement le premier et le deuxième plot en matériau ductile 111, 121 en direction de respectivement de la quatrième et de la troisième zone de connexion 220, 210.  connecting the first and the second connection zone 110, 120 with respectively the third and the fourth connection zone 210, 220 by insertion of the first and second inserts 211, 221 in respectively the first and the second stud of ductile material 111 , 121, the first and second connection areas 110, 120 facing the third and fourth connection areas 210, 220 and the first and second hybridization barriers 212, 222 acting as a barrier containing the deformation respectively the first and the second stud of ductile material 111, 121 towards respectively the fourth and the third connection zone 220, 210.
L'étape de fourniture du premier et deuxième élément conducteur 215, 225 peut être une étape de mise en œuvre du procédé de fabrication du deuxième composant 200 déjà décrit.  The step of providing the first and second conductive element 215, 225 may be a step of implementing the method of manufacturing the second component 200 already described.
L'étape de connexion est idéalement une étape de connexion comprenant deux sous-étapes de compression, telles que celles décrites dans le document WO2009/115686. De telles sous-étapes sont, en référence à la figure 6 :  The connection step is ideally a connection step comprising two substeps of compression, such as those described in WO2009 / 115686. Such sub-steps are, with reference to FIG. 6:
alignement des premier et deuxième composants 100, 200 de manière à mettre en vis-à-vis la première et la deuxième zone de connexion 110, 120 avec respectivement la troisième et la quatrième zone de connexion 210, 220, comme illustré en a) sur la figure 6, insertion partielle des premier et deuxième inserts 211, 221 dans respectivement le premier et le deuxième en matériau ductile 111, 121, comme illustré en b) sur la figure 6, aligning the first and second components 100, 200 so as to bring the first and the second connection area 110, 120 with the third and the fourth connection area 210, 220, respectively, as illustrated in a) on Figure 6 partially inserting the first and second inserts 211, 221 in respectively the first and the second ductile material 111, 121, as illustrated in b) in FIG. 6,
insertion finale des premier et deuxième inserts 211, 221, dans respectivement le premier et le deuxième plot en matériau ductile 111, 121, comme illustré en c) sur la figure 6.  final insertion of the first and second inserts 211, 221, in respectively the first and the second stud of ductile material 111, 121, as illustrated in c) in Figure 6.
On peut noter qu'afin de diminuer l'impact thermique et éviter l'emprisonnement d'air entre chacun des plots en matériau ductile 111, 121 et l'insert 211, 212 correspondant, les deux sous-étapes d'insertion peuvent être réalisées à température ambiante et l'étape d'insertion finale peut être réalisée dans un environnement basse pression tel qu'en vide primaire (c'est-à-dire une pression comprise entre 1000 et 1.10" 3 mbar). It may be noted that in order to reduce the thermal impact and to avoid air entrapment between each of the ductile material pads 111, 121 and the corresponding insert 211, 212, the two insertion sub-steps can be realized. at room temperature and the final insertion step can be carried out in a low pressure environment such as primary vacuum (that is to say a pressure between 1000 and 1.10 " 3 mbar).
On notera que l'alignement étant obtenu avant l'insertion partielle et étant pérennisé par l'insertion partielle, l'étape d'insertion finale peut être réalisée au moyen d'une presse dépourvue de système d'alignement.  It will be noted that the alignment being obtained before the partial insertion and being perpetuated by the partial insertion, the final insertion step can be performed by means of a press without alignment system.
Les figures 7A à 7E illustrent différents modes de réalisation de l'invention qui se différencient principalement de par la forme des première et deuxième barrières d'hybridation 212, 222 et des premier et deuxième inserts 211, 221, certains de ces modes de réalisation n'étant pas couvert par l'invention .  FIGS. 7A to 7E illustrate different embodiments of the invention which differ mainly in the shape of the first and second hybridization barriers 212, 222 and the first and second inserts 211, 221, some of these embodiments 'being not covered by the invention.
Ainsi la figure7A illustre un ensemble 1 selon le premier mode de réalisation avec au-dessus une vue en coupe schématique de l'ensemble 1 et en dessus une vue de dessus du deuxième composant 200. Cette figure étant similaire aux figures 1 à 3, nous renvoyons le lecteur à la description qui en a déjà été faite.  Thus FIG 7A illustrates an assembly 1 according to the first embodiment with above a schematic sectional view of the assembly 1 and above a top view of the second component 200. This figure being similar to Figures 1 to 3, we refer the reader to the description that has already been made.
La figure 7B illustre un ensemble 1 selon un deuxième mode de réalisation non couvert par l'invention dans lequel les première et deuxième barrières d'hybridation 212, 222 sont fournies au moyen d'un élément non-conducteur 216, les inserts 211, 221 étant quant à eux fournis par des éléments conducteurs 215, 225 selon le principe décrit dans le document WO2009/115686. Un tel ensemble 1 selon ce deuxième mode de réalisation se différencie d'un ensemble 1 selon le premier mode de réalisation de par la forme de chacun des éléments conducteurs 215, 225 fournissant les inserts 211, 221 et de par la présence d'un élément non-conducteur 216 fournissant la première et la deuxième barrière d'hybridation 212, 222. FIG. 7B illustrates an assembly 1 according to a second embodiment not covered by the invention in which the first and second hybridization barriers 212, 222 are provided by means of a non-conductive element 216, the inserts 211, 221 being provided by conductive elements 215, 225 according to the principle described in document WO2009 / 115686. Such an assembly 1 according to this second embodiment differs from an assembly 1 according to the first embodiment by the shape of each of the conductive elements 215, 225 providing the inserts 211, 221 and the presence of a non-conductive element 216 providing the first and the second hybridization barrier 212, 222.
Dans ce deuxième mode de réalisation non couvert par l'invention, l'élément non-conducteur 216 est une paroi en un matériau isolant électriquement, tel que par exemple celui formant la couche sacrificielle 310 lors de la formation des éléments conducteurs 215, 225, disposée entre la troisième et la quatrième zone de connexion 210, 220. La surface de l'élément non-conducteur 216 faisant face à la troisième zone de connexion 210 forme ainsi la première barrière d'hybridation 212 tandis l'autre surface, qui fait donc face à la quatrième zone de connexion 220, forme la deuxième barrière de connexion 222.  In this second embodiment not covered by the invention, the non-conductive element 216 is a wall made of an electrically insulating material, such as for example that forming the sacrificial layer 310 during the formation of the conductive elements 215, 225, disposed between the third and the fourth connection zone 210, 220. The surface of the non-conductive element 216 facing the third connection zone 210 thus forms the first hybridization barrier 212 while the other surface, which makes therefore facing the fourth connection zone 220, forms the second connection barrier 222.
L'élément non-conducteur 216 étant réalisé dans un matériau isolant électriquement, la première et la deuxième barrière d'hybridation sont isolées électriquement l'une par rapport à l'autre. Il n'y a donc pas de risque de court-circuit entre le premier et le deuxième plot en matériau ductile 111, 121 lorsque ces première et deuxième barrières d'hybridation 212, 222 contiennent la déformation des plots en matériau ductile 111, 121.  Since the non-conductive element 216 is made of an electrically insulating material, the first and second hybridization barriers are electrically isolated from one another. There is therefore no risk of a short circuit between the first and the second pad of ductile material 111, 121 when these first and second hybridization barriers 212, 222 contain the deformation of the pads made of ductile material 111, 121.
Les premier et deuxième éléments conducteurs 215, 225 étant du même type que les inserts décrits dans le document WO2009/115686, les premier et deuxième éléments conducteurs 215, 225 sont disposés sur une surface correspondant respectivement à la surface projetée orthogonalement du premier et du deuxième plot en matériau ductile 111, 121 lorsque la première et la deuxième zone de connexion 110, 120 sont mises en vis-à-vis de respectivement la troisième et la quatrième zone de connexion 210, 220.  The first and second conductive elements 215, 225 being of the same type as the inserts described in the document WO2009 / 115686, the first and second conductive elements 215, 225 are disposed on a surface respectively corresponding to the projected surface orthogonally of the first and second plot of ductile material 111, 121 when the first and the second connection area 110, 120 are placed opposite the third and fourth connection areas 210, 220, respectively.
L'élément non-conducteur 216, en étant disposé en dehors des troisième et quatrième zones de connexion 210, 220, est en dehors de la surface projetée orthogonalement du premier et du deuxième plot en matériau ductile 111, 121 lorsque la première et la deuxième zone de connexion 110, 120 sont mises en vis-à-vis de respectivement la troisième et la quatrième zone de connexion 210, 220.  The non-conductive element 216, being disposed outside the third and fourth connection zones 210, 220, is outside the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and second connection zone 110, 120 are placed opposite the third and fourth connection zones 210, 220, respectively.
Le procédé de formation des éléments conducteurs 215, 225 et de l'élément non-conducteur 226 d'un deuxième composant 200 selon ce deuxième mode de réalisation non couvert par l'invention se différencie du procédé de formation des éléments conducteurs 215, 225 selon le premier mode de réalisation en ce que lors de l'étape de suppression de la couche sacrificielle 310, la suppression n'est que partielle, une partie de la couche sacrificielle 310 étant conservée pour former l'élément non-conducteur 216. The method of forming the conductive elements 215, 225 and the non-conductive element 226 of a second component 200 according to this second embodiment of embodiment not covered by the invention differs from the method of forming the conductive elements 215, 225 according to the first embodiment in that during the step of removing the sacrificial layer 310, the deletion is only partial, a part of the sacrificial layer 310 being retained to form the non-conductive element 216.
La figure 7C illustre un ensemble 1 selon un troisième mode de réalisation dans lequel chacun des premier et deuxième éléments conducteurs 215, 225 présente sa portion interne biseautée de manière à favoriser l'insertion de chacun des premier et deuxième inserts 211, 221 dans le plot en matériau ductile 111, 112 correspondant. Un ensemble selon ce quatrième mode de réalisation se différencie d'un ensemble selon le premier mode de réalisation de par la forme biseautée de la portion interne de chacun des premier et deuxième éléments conducteurs 215, 225.  FIG. 7C illustrates an assembly 1 according to a third embodiment in which each of the first and second conductive elements 215, 225 has its bevelled internal portion so as to favor the insertion of each of the first and second inserts 211, 221 in the stud. of ductile material 111, 112 corresponding. An assembly according to this fourth embodiment differs from an assembly according to the first embodiment of the beveled shape of the inner portion of each of the first and second conductive elements 215, 225.
Ainsi, chacun des premier et deuxième éléments conducteurs 215, 225 présente la portion de cylindre interne biseautée. L'insert 211, 221 correspondant est ainsi également biseauté selon un principe similaire à celui décrit dans le document WO2009/115686 et la force nécessaire pour la connexion du premier et du deuxième composant 100, 200 est abaissée.  Thus, each of the first and second conductive members 215, 225 has the beveled inner cylinder portion. The corresponding insert 211, 221 is thus also beveled according to a principle similar to that described in WO2009 / 115686 and the force required for the connection of the first and second components 100, 200 is lowered.
La figure 7D illustre un ensemble 1 selon un quatrième mode de réalisation de l'invention non couvert par l'invention dans lequel chacune des troisième et quatrième zones de connexion 210,220 est munie de deux éléments conducteurs 215a, 215b, 225a, 225b. Un ensemble 1 selon ce quatrième mode de réalisation se différencie d'un ensemble 1 selon le premier mode de réalisation en ce qu'il est prévu un premier et un deuxième élément conducteur 215a, 215b en contact de la première zone de connexion 210 et un troisième et un quatrième élément conducteur 225a, 225b en contact de la deuxième zone de connexion 220, et en ce que les premier, deuxième, troisième et quatrième éléments conducteurs 215a, 215b, 225a, 225b présentent une forme cylindrique de section elliptique.  FIG. 7D illustrates an assembly 1 according to a fourth embodiment of the invention not covered by the invention in which each of the third and fourth connection zones 210, 210 is provided with two conductive elements 215a, 215b, 225a, 225b. An assembly 1 according to this fourth embodiment differs from an assembly 1 according to the first embodiment in that there is provided a first and a second conductive element 215a, 215b in contact with the first connection zone 210 and a third and fourth conductive elements 225a, 225b in contact with the second connection zone 220, and in that the first, second, third and fourth conductive elements 215a, 215b, 225a, 225b have a cylindrical shape of elliptical section.
Les premiers, deuxième, troisième et quatrième éléments conducteurs 215a, 215b, 225a, 225b se présentent chacun sous la forme d'une enveloppe cylindrique de section elliptique, l'axe des foyers étant sensiblement perpendiculaire à une droite passant par la troisième et quatrième zone de connexion 210, 220. The first, second, third and fourth conductive elements 215a, 215b, 225a, 225b are each in the form of an envelope cylindrical elliptical section, the axis of the foci being substantially perpendicular to a line passing through the third and fourth connection area 210, 220.
Le premier et le deuxième élément conducteur 215a, 215b sont disposés selon une symétrie centrale vis-à-vis du centre de la première zone de connexion 210. De cette manière, la paroi de chacun des premier et deuxième éléments conducteurs proximale du centre de la première zone de connexion 210 forme le premier insert 211, tandis que la paroi de chacun des premier et deuxième éléments conducteurs 215a, 215b distale du centre de la première zone de connexion 210 forme la première barrière d'hybridation 212.  The first and the second conductive elements 215a, 215b are arranged in central symmetry with respect to the center of the first connection zone 210. In this way, the wall of each of the first and second conductive elements proximal to the center of the first connection zone 210 forms the first insert 211, while the wall of each of the first and second conductive elements 215a, 215b distal from the center of the first connection zone 210 forms the first hybridization barrier 212.
De manière identique, le troisième et le quatrième élément conducteur 225a, 225b sont disposés selon une symétrie centrale vis-à-vis du centre de la deuxième zone de connexion 220. La paroi de chacun des troisième et quatrième éléments conducteurs 225a, 225b, proximale du centre de la première zone de connexion 210, forme le deuxième insert 221, tandis que la paroi de chacun des troisième et quatrième éléments conducteurs, distale du centre de la deuxième zone de connexion 220, forme la deuxième barrière d'hybridation 222.  Similarly, the third and fourth conductive elements 225a, 225b are arranged in a central symmetry with respect to the center of the second connection zone 220. The wall of each of the third and fourth conductive elements 225a, 225b, proximal from the center of the first connection zone 210, forms the second insert 221, while the wall of each of the third and fourth conductive elements, distal from the center of the second connection zone 220, forms the second hybridization barrier 222.
Le dimensionnement du premier au quatrième élément conducteur 215a, 215b, 225a, 225b est adapté pour que :  The sizing of the first to fourth conductive elements 215a, 215b, 225a, 225b is adapted so that:
les portions proximales de paroi du premier, deuxième, troisième et quatrième élément conducteur 215a, 215b, 225a, 225b soient disposées à l'intérieur d'une surface correspondant, pour les premier et deuxième éléments conducteurs 215a, 215b, à la surface projetée orthogonalement du premier plot en matériau ductile 111, et pour les troisième et quatrième éléments conducteurs 225a, 225b à la surface projetée orthogonalement du deuxième plot en matériau ductile 121, ceci lorsque la première et la deuxième zone de connexion 110, 120 sont mises en vis-à-vis de respectivement la troisième et la quatrième zone de connexion 210, 220,  the proximal wall portions of the first, second, third and fourth conductive members 215a, 215b, 225a, 225b are disposed within a corresponding surface for the first and second conductive members 215a, 215b at the orthogonally projected surface of the first ductile material stud 111, and for the third and fourth conductive elements 225a, 225b to the orthogonally projected surface of the second ductile material stud 121, when the first and the second connection areas 110, 120 are exposed. with respect to the third and the fourth connection zone 210, 220 respectively,
les portions de paroi distales du premier, deuxième, troisième et quatrième élément conducteur 215a, 215b, 225a, 225b soient disposées en dehors d'une surface correspondant, pour les premier et deuxième éléments conducteurs 215a, 215b à la surface projetée orthogonalement du premier plot en matériau ductile 111, et, pour les troisième et quatrième éléments conducteurs 215a, 225b à la surface projetée orthogonalement du deuxième plot 121, ceci lorsque la première et la deuxième zone de connexion 110, 120 sont mises en vis-à-vis de respectivement la troisième et la quatrième zone de connexion 210, 220. the distal wall portions of the first, second, third and fourth conductive elements 215a, 215b, 225a, 225b are arranged outside a corresponding surface, for the first and second conductive elements 215a, 215b to the orthogonally projected surface of the first stud of ductile material 111, and for the third and fourth conductive elements 215a, 225b to the orthogonally projected surface of the second stud 121, this when the first and the second connection zone 110, 120 are placed opposite the third and the fourth zone respectively. connection 210, 220.
Le procédé de formation des éléments de connexion 215a, 215b, The method of forming connection elements 215a, 215b,
225a, 225b selon ce quatrième mode de réalisation non couvert par l'invention peut être un procédé du même type que celui décrit dans le document WO 2011/115686, la forme et le positionnement des inserts formés lors du procédé document WO2011/115686 ayant juste à être adaptés pour correspondre à ceux des éléments de connexion 215a, 215b, 225a, 225b selon ce quatrième mode de réalisation. 225a, 225b according to this fourth embodiment not covered by the invention may be a method of the same type as that described in WO 2011/115686, the shape and positioning of the inserts formed during the process document WO2011 / 115686 having just to be adapted to match those of the connecting members 215a, 215b, 225a, 225b according to this fourth embodiment.
La figure 7E illustre un ensemble 1 selon un cinquième mode de réalisation non couvert par l'invention dans lequel la première et la deuxième zone de connexion 110, 120 sont entourées respectivement par un premier et un deuxième élément non-conducteur 216, 226 et sont en contact avec respectivement un premier et un deuxième élément conducteur 215, 225. Un ensemble selon ce cinquième mode de réalisation se différencie d'un ensemble selon le premier mode de réalisation en ce qu'il comporte un premier et un deuxième élément non-conducteur 216, 226 formant respectivement la première et la deuxième barrière d'hybridation 212, 222, le premier et le deuxième élément conducteur 215, 225 formant le premier et le deuxième insert 211, 221.  FIG. 7E illustrates an assembly 1 according to a fifth embodiment not covered by the invention in which the first and the second connection zone 110, 120 are respectively surrounded by a first and a second non-conductive element 216, 226 and are in contact with a first and a second conductive element 215, 225 respectively. An assembly according to this fifth embodiment differs from an assembly according to the first embodiment in that it comprises a first and a second non-conducting element. 216, 226 forming respectively the first and the second hybridization barrier 212, 222, the first and the second conductive element 215, 225 forming the first and the second insert 211, 221.
Dans ce cinquième mode de réalisation non couvert par l'invention, la première et la deuxième zone de connexion 210, 220 sont entourées respectivement par le premier et le deuxième élément non-conducteur 216, 226. Chacun des premier et deuxième éléments non-conducteurs 216, 226 est formé par une paroi en matériau non- conducteur. Selon une possibilité avantageuse de ce mode de réalisation, et quand le matériau de la couche sacrificielle 310 est isolant, chacun du premier et du deuxième élément isolant 216, 226 est réalisé dans le même matériau que celui de la couche sacrificielle.  In this fifth embodiment not covered by the invention, the first and the second connection zone 210, 220 are respectively surrounded by the first and the second non-conductive element 216, 226. Each of the first and second non-conductive elements 216, 226 is formed by a wall of non-conductive material. According to an advantageous possibility of this embodiment, and when the material of the sacrificial layer 310 is insulating, each of the first and the second insulating element 216, 226 is made of the same material as that of the sacrificial layer.
De manière identique au deuxième mode de réalisation non couvert par l'invention, le premier et le deuxième élément conducteur 215, 225 sont du même type que ceux du deuxième mode de réalisation. Ainsi, les premier et deuxième éléments sont disposés sur une surface correspondant respectivement à la surface projetée orthogonalement du premier et du deuxième plot en matériau ductile 111, 121 lorsque la première et la deuxième zone de connexion 110, 120 sont mises en vis-à-vis de respectivement la troisième et la quatrième zone de connexion 210, 220. Similarly to the second embodiment not covered by the invention, the first and the second conductive element 215, 225 are of the same type. than those of the second embodiment. Thus, the first and second elements are arranged on a surface respectively corresponding to the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and second connection areas 110, 120 are facing each other. screw respectively the third and fourth connection area 210, 220.
Les éléments non-conducteurs 216, 226 en étant disposés en dehors des première et deuxième zone de connexion 210, 220, sont également en dehors de la surface projetée orthogonalement du premier et du deuxième plot en matériau ductile 111, 121 lorsque la première et la deuxième zone de connexion 110, 120 sont mises en vis- à-vis de respectivement la troisième et la quatrième zone de connexion 210, 220.  The non-conductive elements 216, 226 being disposed outside the first and second connection zone 210, 220 are also outside the orthogonally projected surface of the first and second ductile material studs 111, 121 when the first and second second connection zone 110, 120 are placed opposite the third and the fourth connection zone 210, 220, respectively.
Le procédé de formation des éléments conducteurs 215, 225 et des éléments non-conducteurs 216, 226 d'un deuxième composant 200 selon ce cinquième mode de réalisation non couvert par l'invention est similaire au procédé de formation selon le second mode de réalisation. Ainsi le procédé de formation des éléments conducteurs 215, 225 et des éléments non-conducteurs 216, 226 se différencie d'un procédé de formation des éléments conducteurs 215, 225 selon le deuxième mode de réalisation en ce que lors de l'étape de suppression de la couche sacrificielle 310, la suppression n'est que partielle, des parties de la couche sacrificielle 310 étant conservées pour former le premier et le deuxième élément non-conducteur 216, 226.  The method of forming conductive elements 215, 225 and non-conductive elements 216, 226 of a second component 200 according to this fifth embodiment not covered by the invention is similar to the forming method according to the second embodiment. Thus, the method for forming conductive elements 215, 225 and non-conductive elements 216, 226 differs from a method for forming conductive elements 215, 225 according to the second embodiment in that during the suppression step of the sacrificial layer 310, the suppression is only partial, parts of the sacrificial layer 310 being retained to form the first and the second non-conductive element 216, 226.
Si dans les différents modes de réalisation décrits ci-dessus les éléments conducteurs et isolants sont de forme cylindrique de révolution ou de section elliptique, l'invention ne se limite pas à ces seuls types de forme. Ainsi l'invention couvre tout type de forme tant que chacune des zones de connexion du deuxième composant comporte :  If in the various embodiments described above the conductive and insulating elements are cylindrical in shape of revolution or elliptical section, the invention is not limited to these types of shape. Thus, the invention covers any type of shape as long as each of the connection zones of the second component comprises:
- un insert 211, 221 est inséré dans un plot en matériau ductile an insert 211, 221 is inserted into a stud made of ductile material
111, 121 correspondant du premier composant 100, 111, 121 corresponding to the first component 100,
au moins une barrière d'hybridation 212, 222 positionnée en dehors des surfaces projetées orthogonalement sur la deuxième face de connexion du plot en matériau ductile correspondant 111, 121 lorsque la zone de connexion 210, 220 est mise en vis-à-vis de la zone de connexion 110, 120 correspondante du premier composant 100 la première et la deuxième barrière 212, 222, 232, 242, 252, 262 entourant respectivement le premier et le deuxième insert 211, 221, 231, 241, 251, 261, le premier insert et la première barrière étant reliés par une première base métallique formée uniquement entre ces deux derniers, le deuxième insert et la deuxième barrière étant reliés par une deuxième base métallique formée uniquement entre ces deux derniers. at least one hybridization barrier 212, 222 positioned outside the orthogonally projected surfaces on the second connecting face of the corresponding ductile material stud 111, 121 when the connection zone 210, 220 is placed opposite the corresponding connection area 110, 120 of the first component 100 the first and second barriers 212, 222, 232, 242, 252, 262 respectively surrounding the first and second inserts 211, 221, 231, 241, 251, 261, the first insert and the first barrier being connected by a first base metal formed solely between these two last, the second insert and the second barrier being connected by a second metal base formed solely between the latter two.
Ainsi la figure 8 illustre quatre exemples de forme d'inserts 211, 221 et de barrières d'hybridation 212, 222 compatibles avec invention. En a) de la figure 8, l'insert 211, 221 et la barrière d'hybridation 212, 222 sont fournis par un élément conducteur 215, 225 se présentant sous la forme d'enveloppe cylindrique à double paroi de section cubique.  Thus, FIG. 8 illustrates four examples of form inserts 211, 221 and hybridization barriers 212, 222 compatible with the invention. In a) of FIG. 8, the insert 211, 221 and the hybridization barrier 212, 222 are provided by a conductive element 215, 225 in the form of a cylindrical double wall envelope of cubic section.
En b) de la figure 8, l'insert 211, 221 est fourni par une enveloppe cylindrique de section circulaire tandis que la barrière d'hybridation 212, 222est fournie par une enveloppe cylindrique de section carrée, chacune de ces enveloppes étant fournies, pour une zone de connexion 210, 220, par un unique élément conducteur 215.  In b) of Figure 8, the insert 211, 221 is provided by a cylindrical envelope of circular section while the hybridization barrier 212, 222is provided by a cylindrical envelope of square section, each of these envelopes being provided for a connection zone 210, 220, by a single conductive element 215.
En c) de la figure 8, l'insert 211, 221 est fourni par une enveloppe cylindrique de section circulaire tandis que la barrière d'hybridation 212, 222 est fournie par une enveloppe cylindrique de section hexagonale, chacune de ces enveloppes étant fournies, pour une zone de connexion210, 220, par un unique élément conducteur 215.  In c) of Figure 8, the insert 211, 221 is provided by a cylindrical envelope of circular section while the hybridization barrier 212, 222 is provided by a cylindrical envelope of hexagonal section, each of these envelopes being provided, for a connection zone 210, 220, by a single conductive element 215.
En d) de la figure 8, l'insert 211, 221 est fourni par un cylindre plein de section circulaire tandis que la barrière d'hybridation 212, 222 est fournie par une enveloppe cylindrique de section hexagonale, chacun de ce cylindre et de cet enveloppe étant fournie, pour une zone de connexion donnée 210, 220, par un unique élément conducteur 215.  In d) of FIG. 8, the insert 211, 221 is provided by a solid cylinder of circular section while the hybridization barrier 212, 222 is provided by a cylindrical envelope of hexagonal section, each of this cylinder and this envelope being provided, for a given connection area 210, 220, by a single conductive element 215.

Claims

REVENDICATIONS
1. Procédé de connexion électrique par hybridation d'un premier composant (100) à un deuxième composant (200), le premier et deuxième composant (100, 200) comportant respectivement une première et une deuxième face de connexion (101, 201), la première face de connexion (101) comportant au moins une première et une deuxième zone de connexion (110, 120) à connecter respectivement à au moins une troisième et une quatrième zone de connexion (210, 220, 230, 240, 250, 260) correspondante de la deuxième face de connexion (201), 1. A method of electrical connection by hybridization of a first component (100) to a second component (200), the first and second components (100, 200) respectively comprising a first and a second connection face (101, 201), the first connection face (101) having at least a first and a second connection area (110, 120) to be connected respectively to at least a third and a fourth connection area (210, 220, 230, 240, 250, 260 ) corresponding to the second connection face (201),
le procédé comportant les étapes suivantes :  the process comprising the following steps:
- formation d'un premier et d'un deuxième plot en matériau ductile (111, 121) métallique en contact respectif avec la première et la deuxième zone de connexion (110, 120),  - forming a first and a second pad of ductile material (111, 121) metal in respective contact with the first and the second connection area (110, 120),
- formation d'un premier et d'un deuxième insert (211, 221, 231, 241, 251, 261) en matériau conducteur en contact de respectivement la troisième et la quatrième zone de connexion (210, 220, 230, 240, 250, 260), le premier et le deuxième insert (211, 221, 231, 241, 251, 261) étant destinés à être insérés da ns respectivement le premier et le deuxième plot en matériau ductile (111, 121), le premier et le deuxième insert se présentant sous une forme creuse,  forming a first and a second insert (211, 221, 231, 241, 251, 261) made of conductive material in contact with the third and the fourth connection zone (210, 220, 230, 240, 250 respectively); , 260), the first and second inserts (211, 221, 231, 241, 251, 261) being intended to be inserted in respectively the first and the second stud of ductile material (111, 121), the first and the second second insert in a hollow form,
le procédé de connexion électrique étant caractérisé en ce que  the electrical connection method being characterized in that
lors de l'étape de formation du premier et deuxième insert il est également formé sur la deuxième face de connexion (201) au moins une première et une deuxième barrière d'hybridation (212, 222, 232, 242, 252, 262) disposées au moins en partie entre le premier et le deuxième insert (211, 221, 231, 241, 251, 261) et isolées électriquement l'une de l'autre, lesdites première et deuxième barrières d'hybridation (212, 222, 232, 242, 252, 262) étant toutes deux positionnées en dehors des surfaces projetées orthogonalement sur la deuxième face de connexion (201) des premier et deuxième plots en matériau ductile (111, 121) lorsque la première et la deuxième zone de connexion (110, 120) sont mise en vis-à-vis de respectivement la troisième et la quatrième zone de connexion (210, 220, 230, 240, 250, 260), la première et la deuxième paroi d'hybridation (212, 222, 232, 242, 252, 262) étant en dehors de respectivement la quatrième et la troisième zone de connexion (220, 210, 230, 240, 250, 260), la première et la deuxième barrière (212, 222, 232, 242, 252, 262) entourant respectivement le premier et le deuxième insert (211, 221, 231, 241, 251, 261), during the step of forming the first and second insert is also formed on the second connecting face (201) at least a first and a second hybridization barrier (212, 222, 232, 242, 252, 262) disposed at least partly between the first and second inserts (211, 221, 231, 241, 251, 261) and electrically isolated from each other, said first and second hybridization barriers (212, 222, 232, 242, 252, 262) are both positioned outside the orthogonally projected surfaces on the second connection face (201) of the first and second ductile material pads (111, 121) when the first and the second connection area (110, 120) are placed opposite the third and the fourth connection zone (210, 220, 230, 240, 250, 260), the first and the second wall respectively. the second and fourth connection regions (220, 210, 230, 240, 250, 260), the first and the second barrier ( 212, 222, 232, 242, 252, 262) respectively surrounding the first and the second insert (211, 221, 231, 241, 251, 261),
le procédé comportant en outre l'étape suivante :  the method further comprising the following step:
- connexion de la première et de la deuxième zone de connexion (110, - connection of the first and second connection area (110,
120) avec respectivement la troisième et la quatrième zone de connexion (210, 220, 230, 240, 250, 260) par insertion du premier et du deuxième insert (211, 221, 231, 241, 251, 261) dans respectivement le premier et le deuxième plot en matériau ductile (111, 121), les première et deuxième zones de connexion (110, 120) étant en vis-à-vis des troisième et quatrième zones de connexion (210, 220, 230, 240, 250, 260) et les première et deuxième barrière d'hybridation (212, 222, 232, 242, 252, 262) faisant office de barrière en contenant la déformation de respectivement le premier et le deuxième plot en matériau ductile (111,120) with the third and fourth connection regions (210, 220, 230, 240, 250, 260) respectively by inserting the first and second inserts (211, 221, 231, 241, 251, 261) respectively in the first and the second stud of ductile material (111, 121), the first and second connection regions (110, 120) facing the third and fourth connection regions (210, 220, 230, 240, 250, 260) and the first and second hybridization barriers (212, 222, 232, 242, 252, 262) acting as a barrier containing the deformation of respectively the first and the second pad of ductile material (111,
121) en direction de respectivement la quatrième et la troisième zone de connexion (210, 220, 230, 240, 250, 260), 121) towards respectively the fourth and the third connection zone (210, 220, 230, 240, 250, 260),
et dans lequel l'étape de formation du premier et du deuxième insert comporte les sous-étapes suivantes :  and wherein the step of forming the first and second inserts comprises the following substeps:
dépôt d'une couche sacrificielle (310) sur la deuxième face de connexion,  depositing a sacrificial layer (310) on the second connection face,
- gravure partielle, de la couche sacrificielle (310) de manière à libérer une partie (311) de chacune des zones de connexion (320) correspondant à une portion de zone destinée à être présent entre l'insert et la barrière d'hybridation correspondant,  partial etching, of the sacrificial layer (310) so as to release a portion (311) of each of the connection zones (320) corresponding to a portion of zone intended to be present between the insert and the corresponding hybridization barrier; ,
dépôt d'une couche d'un matériau métallique (320) destinée à former le premier et le deuxième insert et la première et la deuxième barrière d'hybridation,  depositing a layer of a metallic material (320) for forming the first and the second insert and the first and second hybridization barrier,
polissage de la deuxième face de manière à supprimer la partie de la couche du matériau métallique (320) qui est en contact avec la surface de la couche sacrificielle (310) qui est opposée à la deuxième face de connexion et conserver les parties de la couche du matériau métallique (320) recouvrant les parties (311) préalablement libérées, lesdites parties conservées formant ainsi les éléments conducteurs (235, 245, 255, 265) des zones de connexion (230, 240, 250, 260), polishing the second face so as to remove the portion of the layer of the metallic material (320) which is in contact with the surface of the sacrificial layer (310) which is opposite to the second connection face and retain the parts of the layer metal material (320) covering the parts (311) previously released, said retained portions thus forming the conductive elements (235, 245, 255, 265) of the connection areas (230, 240, 250, 260),
suppression de la couche sacrificielle (310).  removing the sacrificial layer (310).
2. Procédé de connexion électrique selon la revendication 1 dans lequel lors de l'étape de formation sur la deuxième face de connexion (201) d'au moins une première et une deuxième barrière d'hybridation (212, 222, 232, 242, 252, 262), la première et la deuxième barrière d'hybridation (212, 222, 232, 242, 252, 262) sont formées respectivement en contact de la troisième et la quatrième zone de connexion (210, 220, 230, 240, 250, 260). 2. An electrical connection method according to claim 1 wherein in the forming step on the second connection face (201) of at least a first and a second hybridization barrier (212, 222, 232, 242, 252, 262), the first and second hybridization barriers (212, 222, 232, 242, 252, 262) are respectively formed in contact with the third and fourth connection regions (210, 220, 230, 240, 250, 260).
3. Procédé de connexion électrique selon la revendication 2 dans lequel lors de la formation de la première et de la deuxième barrière d'hybridation (212, 222, 232, 242, 252, 262), les première et deuxième barrières d'hybridation (212, 222, 232, 242, 252, 262) sont réalisées dans un matériau conducteur. 3. An electrical connection method according to claim 2 wherein during the formation of the first and second hybridization barrier (212, 222, 232, 242, 252, 262), the first and second hybridization barriers ( 212, 222, 232, 242, 252, 262) are made of a conductive material.
4. Procédé de connexion électrique selon la revendication 3, dans lequel le premier et le deuxième insert (211, 221, 231, 241, 251, 261) et la première et la deuxième barrière d'hybridation (212, 222, 232, 242, 252, 262) sont réalisés dans le même matériau conducteur. 4. An electrical connection method according to claim 3, wherein the first and the second insert (211, 221, 231, 241, 251, 261) and the first and the second hybridization barrier (212, 222, 232, 242 , 252, 262) are made of the same conductive material.
5. Procédé de connexion électrique selon la revendication 4 dans lequel lors des étapes de formation du premier et du deuxième insert (211, 221, 231, 241, 251, 261) et de la première et de la deuxième barrière d'hybridation (212, 222, 232, 242, 252, 262), la formation du premier insert (211) et de la première barrière d'hybridation (212) consiste en la formation d'un premier élément conducteur (215) en contact de la troisième zone de connexion (210), la formation du deuxième insert (221) et de la deuxième barrière d'hybridation (222) consiste en la formation d'un deuxième élément conducteur (225) en contact de la quatrième zone de connexion (220). 5. An electrical connection method according to claim 4 wherein during the steps of forming the first and second insert (211, 221, 231, 241, 251, 261) and the first and second hybridization barrier (212). , 222, 232, 242, 252, 262), forming the first insert (211) and the first hybridization barrier (212) consists of forming a first conductive element (215) in contact with the third zone connection (210), forming the second insert (221) and the second hybridization barrier (222) comprises forming a second conductive member (225) in contact with the fourth connection area (220).
6. Procédé de connexion électrique selon la revendication 5 dans lequel lors des étapes de formation du premier et du deuxième insert (211, 221) et de la première et de la deuxième barrière d'hybridation (212, 222), le premier et le deuxième élément conducteur (215, 225) se présentent chacun sous la forme d'une première et d'une deuxième paroi cylindriques de révolution et concentriques, s'étendant chacune sensiblement perpendiculairement à la surface de zone de connexion correspondante (210, 220), la première paroi étant entourée par la deuxième paroi et formant l'insert (211, 221) correspondant audit élément conducteur (215, 225), la surface de la deuxième paroi en regard de la première paroi formant la barrière d'hybridation (212, 222) correspondant audit élément conducteur (215, 225). 6. An electrical connection method according to claim 5 wherein during the steps of forming the first and second insert (211, 221) and the first and the second hybridization barrier (212, 222), the first and second conductive elements (215, 225) are each in the form of first and second cylindrical walls of revolution and concentric, each extending substantially perpendicular to the corresponding connection area surface (210, 220), the first wall being surrounded by the second wall and forming the insert (211, 221) corresponding to said conductive member (215, 225), the surface of the second wall facing the first wall forming the hybridization barrier (212, 222) corresponding to said conductive element (215, 225).
7. Ensemble (1) de deux composants (100, 200) connectés l'un à l'autre par hybridation, 7. Set (1) of two components (100, 200) connected to one another by hybridization,
dans lequel le premier composant (100) comporte une première face de connexion (101) comprenant au moins une première et une deuxième zone de connexion (110, 120), chacune des première et deuxième zone de connexion (110, 120), ledit premier composant (100) comportant en outre en contact un premier et un deuxième plot en matériau ductile (111, 121) en contact respectivement de la première et de la deuxième zone de connexion (110, 120),  wherein the first component (100) has a first connection face (101) comprising at least a first and a second connection area (110, 120), each of the first and second connection area (110, 120), said first component (100) further comprising in contact a first and a second pad of ductile material (111, 121) in contact respectively with the first and second connection regions (110, 120),
dans lequel le deuxième composant (200) comporte une deuxième face de connexion (201) comprenant au moins une troisième et une quatrième zone de connexion (210, 220) en vis-à-vis de respectivement la première et la deuxième zone de connexion (110, 120), le deuxième composant (200) comportant en outre un premier et un deuxième insert (211, 221) en contact de respectivement la troisième et de la quatrième zone de connexion (210, 220), le premier et le deuxième insert (211, 221) étant respectivement inséré dans le premier et le deuxième plot en matériau ductile (111, 121) de la première et de la deuxième zone de connexion (110, 120) de manière à assurer une connexion électrique entre la première et la deuxième zone de connexion (110, 120) et respectivement la troisième et la quatrième zone de connexion (210, 220), le premier et le deuxième insert se présentant sous une forme creuse,  wherein the second component (200) has a second connection face (201) comprising at least a third and a fourth connection area (210, 220) facing the first and second connection areas ( 110, 120), the second component (200) further comprising a first and a second insert (211, 221) in contact with the third and fourth connection regions (210, 220), the first and the second insert respectively. (211, 221) being respectively inserted into the first and second ductile material pads (111, 121) of the first and second connection areas (110, 120) so as to provide an electrical connection between the first and the second second connection zone (110, 120) and respectively the third and fourth connection zone (210, 220), the first and the second insert being in a hollow form,
ledit ensemble (1) étant caractérisé en que le deuxième composant (200) comporte en outre sur sa deuxième face de connexion (201) une première et deuxième barrières d'hybridation (212, 222) disposées au moins en partie entre le premier et le deuxième insert (211, 221), la première et la deuxième paroi d'hybridation (212, 222) étant en dehors de respectivement la quatrième et la troisième zone de connexion (220, 210) et faisant office de barrière à respectivement le premier et le deuxième plot en matériau ductile (111, 121) en direction de respectivement de la quatrième et de la troisième zone de connexion (210, 220), la première et la deuxième barrière (212, 222, 232, 242, 252, 2620) entourant respectivement le premier et le deuxième insert (211, 221, 231, 241, 251, 261), le premier insert et la première barrière étant reliés par une première base métallique formée uniquement entre ces deux derniers, le deuxième insert et la deuxième barrière étant reliés par une deuxième base métallique formée uniquement entre ces deux derniers. said assembly (1) being characterized in that the second component (200) further comprises on its second connection face (201) a first and second hybridization barriers (212, 222) arranged at least partly between the first and the second insert (211, 221), the first and the second hybridization wall (212, 222) being respectively outside the fourth and the third connection zone (220, 210) and acting as a barrier respectively to the first and the second stud of ductile material (111, 121) in the direction of respectively the fourth and the third connection zone (210, 220) the first and second barriers (212, 222, 232, 242, 252, 2620) respectively surrounding the first and second inserts (211, 221, 231, 241, 251, 261), the first insert and the first barrier being connected by a first metal base formed solely between these two last, the second insert and the second barrier being connected by a second metal base formed solely between the latter two.
8. Ensemble (1) selon la revendication 7, dans lequel la première et deuxième barrière d'hybridation (212, 222) et le premier et le deuxième insert (211, 221) sont réalisés dans un matériau conducteur. 8. Assembly (1) according to claim 7, wherein the first and second hybridization barrier (212, 222) and the first and the second insert (211, 221) are made of a conductive material.
9. Ensemble (1) selon la revendication 8, dans lequel le premier insert (211) et la première barrière (221) sont fournis par un premier élément conducteur (215) en contact avec la première zone de connexion (210), le deuxième insert (221) et la deuxième barrière (222) étant fournis par un deuxième élément conducteur (225) en contact avec la deuxième zone de connexion (220). The assembly (1) according to claim 8, wherein the first insert (211) and the first barrier (221) are provided by a first conductive member (215) in contact with the first connection area (210), the second insert (221) and the second barrier (222) being provided by a second conductive member (225) in contact with the second connection area (220).
EP17764883.9A 2016-08-18 2017-08-18 Method for connecting cross-components at optimised density Withdrawn EP3501042A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1601237A FR3055166B1 (en) 2016-08-18 2016-08-18 INTERCOMPONENT CONNECTION PROCESS WITH OPTIMIZED DENSITY
PCT/FR2017/052247 WO2018033689A1 (en) 2016-08-18 2017-08-18 Method for connecting cross-components at optimised density

Publications (1)

Publication Number Publication Date
EP3501042A1 true EP3501042A1 (en) 2019-06-26

Family

ID=57539297

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17764883.9A Withdrawn EP3501042A1 (en) 2016-08-18 2017-08-18 Method for connecting cross-components at optimised density

Country Status (5)

Country Link
US (1) US20210280628A1 (en)
EP (1) EP3501042A1 (en)
CN (1) CN109791920A (en)
FR (1) FR3055166B1 (en)
WO (1) WO2018033689A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2904815T3 (en) 2018-08-03 2022-04-06 Ge Renewable Tech Preformed cap with inter-blade profiles for hydraulic turbines
FR3091411B1 (en) 2018-12-28 2021-01-29 Commissariat Energie Atomique Optimized manufacturing processes of a structure intended to be assembled by hybridization and of a device comprising such a structure
FR3113982A1 (en) 2020-09-10 2022-03-11 Commissariat à l'Energie Atomique et aux Energies Alternatives method of assembly by hybridization of two microelectronic components

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06164185A (en) * 1992-11-20 1994-06-10 Tatsuta Electric Wire & Cable Co Ltd Hybrid ic
JP2005197488A (en) * 2004-01-08 2005-07-21 Sony Corp Projection electrode, bonding capillary and semiconductor chip
JP2006100552A (en) * 2004-09-29 2006-04-13 Rohm Co Ltd Wiring board and semiconductor device
FR2876243B1 (en) 2004-10-04 2007-01-26 Commissariat Energie Atomique DUCTILE BURST CONDUCTIVE PROTUBERANCE COMPONENT AND METHOD FOR ELECTRICAL CONNECTION BETWEEN THIS COMPONENT AND A COMPONENT HAVING HARD CONDUCTIVE POINTS
JP5076482B2 (en) * 2006-01-20 2012-11-21 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US8218918B2 (en) 2007-03-26 2012-07-10 Trex Enterprises Corp Optical fiber switch with movable lens
KR20090038624A (en) * 2007-10-16 2009-04-21 주식회사 동부하이텍 Method for fabricating a barrier metal layer
FR2928033B1 (en) * 2008-02-22 2010-07-30 Commissariat Energie Atomique CONNECTING COMPONENT HAVING HOLLOW INSERTS.
TWI455263B (en) * 2009-02-16 2014-10-01 Ind Tech Res Inst Chip package structure and chip package method
JP5786273B2 (en) * 2009-12-28 2015-09-30 オムロン株式会社 Infrared sensor and infrared sensor module
US8546921B2 (en) * 2010-08-24 2013-10-01 Qualcomm Incorporated Hybrid multilayer substrate
FR2977370B1 (en) * 2011-06-30 2013-11-22 Commissariat Energie Atomique CONNECTING COMPONENT HAVING HOLLOW INSERTS
DE102011081641B4 (en) * 2011-08-26 2014-11-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensor and method for manufacturing a sensor
CN103931057B (en) * 2011-10-17 2017-05-17 安费诺有限公司 Electrical connector with hybrid shield
DE102012216618A1 (en) * 2012-09-18 2014-03-20 Robert Bosch Gmbh Arrangement of at least two wafers for detecting electromagnetic radiation and method for producing the arrangement
US9437565B2 (en) * 2014-12-30 2016-09-06 Advanced Seminconductor Engineering, Inc. Semiconductor substrate and semiconductor package structure having the same
US9540228B2 (en) * 2015-01-29 2017-01-10 Invensense, Inc. MEMS-CMOS device that minimizes outgassing and methods of manufacture

Also Published As

Publication number Publication date
US20210280628A1 (en) 2021-09-09
WO2018033689A1 (en) 2018-02-22
CN109791920A (en) 2019-05-21
FR3055166A1 (en) 2018-02-23
FR3055166B1 (en) 2020-12-25

Similar Documents

Publication Publication Date Title
EP2255383B1 (en) Connection component with hollow inserts and method for making same
EP2175485B1 (en) Connection between two plugged and soldered inserts and method of manufacturing the same
EP3667728B1 (en) Method for manufacturing a device with light-emitting and/or light-receiving diodes and with a self-aligned collimation grid
EP2727144B1 (en) Method for connecting a component equipped with hollow inserts
FR2913145A1 (en) ASSEMBLY OF TWO PARTS OF INTEGRATED ELECTRONIC CIRCUIT
EP2287904B1 (en) Method for assembling two electronic components
WO2018033689A1 (en) Method for connecting cross-components at optimised density
FR2903811A1 (en) ELECTRONIC DEVICE COMPRISING ELECTRONIC COMPONENTS CONNECTED TO A SUBSTRATE AND MUTUALLY CONNECTED AND METHOD OF MANUFACTURING SUCH A DEVICE
EP2816597A2 (en) Method for manufacturing a mechanically self-contained microelectronic device
FR2998710A1 (en) IMPROVED METHOD OF MAKING A STRUCTURE FOR THE ASSEMBLY OF MICROELECTRONIC DEVICES
EP3109900B1 (en) Method for manufacturing a plurality of dipoles in the form of islands with self-aligned electrodes
FR2990297A1 (en) STACK OF SEMICONDUCTOR STRUCTURES AND METHOD OF MANUFACTURING THE SAME
FR3056824A1 (en) METHOD FOR MANUFACTURING INTEGRATED CIRCUIT WITH SEVERAL ACTIVE LAYERS AND CORRESPONDING INTEGRATED CIRCUIT
EP3675187B1 (en) Optimised methods for manufacturing a structure to be assembled by hybridisation and a device including such a structure
EP3031775B1 (en) Method for producing an electrical connection in a blind via
FR2864342A1 (en) Electronic components e.g. ball grid array type encapsulation packages, connecting method, involves connecting conducting zones of external outputs of components appearing on wafer`s connection surface
EP1350418A1 (en) Method for producing interconnection in a multilayer printed circuits
FR2972569A1 (en) CONNECTING COMPONENT HAVING HOLLOW INSERTS
EP3886159A1 (en) Interconnection chip
FR3140985A1 (en) SIP TYPE ELECTRONIC DEVICE AND METHOD FOR PRODUCING SUCH A DEVICE
FR2983845A1 (en) Method for manufacturing mechanical connection between e.g. semiconductor substrates to form microstructure, involves inserting stud in zone, where materials form alloy metal having melting point higher than that of one of materials
FR3018151A1 (en) METHOD FOR MAKING AN ELECTRIC INTERCONNECTION LEVEL
FR2978610A1 (en) Method for making electrically conductive connection in semiconductor substrate of three-dimensional integrated structure, involves thinning substrate from face of substrate up to pillar that is guided on another face of substrate
CH704884A1 (en) Substrate for receiving electrical contacts.
FR2904472A1 (en) METHOD FOR MANUFACTURING ENCAPSULE INTEGRATED CIRCUIT AND INTEGRATED ENCAPSULE INTEGRATED CIRCUIT

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20190228

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/485 20060101AFI20200220BHEP

Ipc: H01L 25/00 20060101ALN20200220BHEP

Ipc: H01L 21/60 20060101ALI20200220BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/485 20060101AFI20200227BHEP

Ipc: H01L 21/60 20060101ALI20200227BHEP

Ipc: H01L 25/00 20060101ALN20200227BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 25/00 20060101ALN20200330BHEP

Ipc: H01L 23/485 20060101AFI20200330BHEP

Ipc: H01L 21/60 20060101ALI20200330BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/60 20060101ALI20200505BHEP

Ipc: H01L 23/485 20060101AFI20200505BHEP

Ipc: H01L 25/00 20060101ALN20200505BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 25/00 20060101ALN20200515BHEP

Ipc: H01L 21/60 20060101ALI20200515BHEP

Ipc: H01L 23/485 20060101AFI20200515BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/485 20060101AFI20200529BHEP

Ipc: H01L 25/00 20060101ALN20200529BHEP

Ipc: H01L 21/60 20060101ALI20200529BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 25/00 20060101ALN20200616BHEP

Ipc: H01L 21/60 20060101ALI20200616BHEP

Ipc: H01L 23/485 20060101AFI20200616BHEP

INTG Intention to grant announced

Effective date: 20200716

GRAJ Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

INTC Intention to grant announced (deleted)
GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/485 20060101AFI20201217BHEP

Ipc: H01L 25/00 20060101ALN20201217BHEP

Ipc: H01L 21/60 20060101ALI20201217BHEP

INTG Intention to grant announced

Effective date: 20210118

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20210529