EP3390278A1 - Dotierte zusammensetzungen, verfahren zu ihrer herstellung und ihre verwendung - Google Patents
Dotierte zusammensetzungen, verfahren zu ihrer herstellung und ihre verwendungInfo
- Publication number
- EP3390278A1 EP3390278A1 EP16806103.4A EP16806103A EP3390278A1 EP 3390278 A1 EP3390278 A1 EP 3390278A1 EP 16806103 A EP16806103 A EP 16806103A EP 3390278 A1 EP3390278 A1 EP 3390278A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- hydridosilane
- silicon
- formula
- composition according
- generic formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 51
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 5
- 150000002367 halogens Chemical class 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 39
- 238000009472 formulation Methods 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 9
- 125000004122 cyclic group Chemical group 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 4
- 238000006384 oligomerization reaction Methods 0.000 claims description 4
- 239000003054 catalyst Substances 0.000 claims description 3
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 claims description 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 abstract 1
- 125000000041 C6-C10 aryl group Chemical group 0.000 abstract 1
- 238000000034 method Methods 0.000 description 24
- 239000000758 substrate Substances 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 16
- 229910052796 boron Inorganic materials 0.000 description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- -1 boric acid ester Chemical class 0.000 description 5
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 5
- 239000004914 cyclooctane Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- UYANAUSDHIFLFQ-UHFFFAOYSA-N borinic acid Chemical class OB UYANAUSDHIFLFQ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 3
- 229910000085 borane Inorganic materials 0.000 description 3
- 150000001639 boron compounds Chemical class 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical class OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 150000001638 boron Chemical class 0.000 description 2
- ZADPBFCGQRWHPN-UHFFFAOYSA-N boronic acid Chemical compound OBO ZADPBFCGQRWHPN-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 2
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- IVDFJHOHABJVEH-UHFFFAOYSA-N pinacol Chemical compound CC(C)(O)C(C)(C)O IVDFJHOHABJVEH-UHFFFAOYSA-N 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- 150000000180 1,2-diols Chemical class 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- CAQYAZNFWDDMIT-UHFFFAOYSA-N 1-ethoxy-2-methoxyethane Chemical compound CCOCCOC CAQYAZNFWDDMIT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000004639 Schlenk technique Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003828 SiH3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000995 aerosol-assisted chemical vapour deposition Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- LMGZGXSXHCMSAA-UHFFFAOYSA-N cyclodecane Chemical compound C1CCCCCCCCC1 LMGZGXSXHCMSAA-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 238000001928 direct liquid injection chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229940030980 inova Drugs 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- OLRJXMHANKMLTD-UHFFFAOYSA-N silyl Chemical compound [SiH3] OLRJXMHANKMLTD-UHFFFAOYSA-N 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- WHRNULOCNSKMGB-UHFFFAOYSA-N tetrahydrofuran thf Chemical compound C1CCOC1.C1CCOC1 WHRNULOCNSKMGB-UHFFFAOYSA-N 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- XFPJTCMBFSZPEX-UHFFFAOYSA-N tetrasilylsilane Chemical compound [SiH3][Si]([SiH3])([SiH3])[SiH3] XFPJTCMBFSZPEX-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
- C07F5/025—Boronic and borinic acid compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
- C07F5/04—Esters of boric acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- Doped compositions, processes for their preparation and their use The present invention relates to doped compositions, processes for their preparation, and their use.
- Silicon-containing layers can be deposited from the gas phase in vacuum chambers, for. Via PECVD.
- gas phase processes are technically complex and often do not lead to layers of desired quality.
- liquid phase processes for producing silicon-containing layers are often preferred.
- compositions which can be used to prepare silicon-containing layers by liquid-phase processes are of great interest.
- liquid phase methods of preparation intrinsic, i. undoped silicon-containing layers of interest.
- processes for producing doped silicon-containing layers and the compositions used in them are of interest.
- US Pat. No. 5,866,471 A discloses a method for producing p-doped silicon-containing layers, in which an undoped coating composition is applied to a substrate and converted into a doped silicon-containing layer in the presence of a p-dopant-containing atmosphere.
- a disadvantage of this method is that it is very expensive, especially from the apparative side.
- US Pat. No. 5,866,471 A also discloses a pure liquid phase process for producing doped silicon-containing layers, in which a formulation comprising a dopant and a silicon-containing precursor is applied to a substrate and subsequently into a substrate
- the dopants used are either alkylated / arylated compounds of the dopant (such as BPfi3, BMePh2 or B (i-Bu) 3) or compounds having a bond between a silicon atom and a dopant.
- EP 1 715 509 B1 and EP 1 085 579 A1 also disclose a method for producing doped silicon-containing layers, in which a summary comprising a compound of the formula SiaXbYc, where Y can stand for a boron atom, is used. However, these compounds must first be synthesized consuming.
- EP 1 640 342 A1 and EP 1 357 154 A1 disclose silicon-forming compositions which may comprise a silane polymer and an organic solvent and optionally a material containing an element of the 3rd main group, inter alia boron.
- Exemplary compounds are those mentioned in JP 2000-031066 A, ie B 2 H 6 , ⁇ 4 ⁇ , B5H9, B 6 Hio, B10H14, B (CH 3 ) 3, B (C 2 H 5 ) 3, and B (C 6 H 5 ) 3.
- the corresponding alkylated or arylated boron compounds lead to disadvantageous carbon-containing layers.
- the use of said boranes is further disadvantageous because of their high toxicity.
- US 2008/0022897 A1 discloses, inter alia, silicon-forming compositions containing a
- the described boron-containing dopants may be boron-containing heterocyclosilane compounds or other compounds having boron-silicon bonds which have the disadvantage already described above of first having to be synthesized in a complex manner.
- hydrogen-containing, alkylated, arylated or arylalkylated boron compounds which are disadvantageous either because of their toxicity already mentioned or because of their ability to lead to carbon-containing layers.
- DE 10 2010 040 231 A1 furthermore describes suitable formulations for producing p-doped silicon-containing layers comprising a silicon compound and at least one compound from the group of hydroborating agents, which is a complex of BH3 with a complexing agent selected from the group consisting of THF, NR3 and SR'2 can act. Due to the metastability of the compounds mentioned, however, no controlled addition of the dopants is ensured. It is thus the object of the present invention to avoid the disadvantages of the prior art. In particular, it is the object of the present invention to provide dopants comprising formulations with which readily carbon-free, silicon-containing layers can be prepared from easily accessible, low-toxic and stable compounds.
- Processes for the preparation of hydridosilanes are known to the person skilled in the art.
- the hydridosilanes present in the compositions according to the invention furthermore have at least 5 Si atoms, ie n> 5.
- Hydridosilanes consist of silicon and hydrogen atoms and have opposite
- carbon-containing organosilanes or hydrogen- and carbon-containing organosilanes have the advantage that, when converted to silicon (with possibly one for the
- the content of hydridosilane can be from 0.1 to 99% by weight, preferably from 1 to 30% by weight.
- the hydridosilane according to the invention is a hydridosilane oligomer which can be prepared from at least one hydridosilane of the generic formula SixH2x + 2 with x> 3 or a cyclic hydridosilane of the generic formula SixH2x with x> 5, where from linear or
- Hydridosilane oligomers are understood to mean hydridosilanes which can be prepared from hydridosilanes having a comparatively lower molecular weight by way of oligomerization.
- hydridosilane oligomers are also hydridosilanes. From corresponding linear or branched hydridosilanes of the generic formula Si x H2x + 2 with x> 3, hydridosilanes which can be used advantageously in a particularly advantageous manner by thermal means can be produced particularly well.
- the hydridosilane is particularly preferably obtainable via thermal oligomerization of a composition comprising as hydridosilane essentially at least one hydridosilane of the formula Si x H2x + 2 with x> 3 -20 in the absence of a catalyst at temperatures of less than 235 ° C.
- a composition comprising as hydridosilane essentially at least one hydridosilane of the formula Si x H2x + 2 with x> 3 -20 in the absence of a catalyst at temperatures of less than 235 ° C.
- Corresponding processes for the preparation of these compounds are disclosed in WO 201 1/104147 A1. These compounds typically have weight average
- Particularly suitable hydridosilane oligomers having a weight-average molecular weight of 500-3500 g / mol can be prepared by the process according to the invention for use in the compositions according to the invention.
- compositions which contain a hydridosilane of the generic formula SinHm, which was prepared thermally from a branched hydridosilane, most preferably from Si (SiH 3) 4 (neo-pentasilane).
- Suitable compounds are optionally alkylated, arylated, arylalkylated, halogenated and / or hydrogenated boron, boronic or borinic acid esters. It has hitherto not been known that boron, boron or borinic acid esters can be used for doping since it has been assumed that the oxygen contained in them adversely affects the electrical properties of the resulting layers.
- DE 695 05 268 T2 discloses processes for producing ceramic materials based on silicon carbide from polyalkylhydridosilanes and / or polyarylhydridosilanes in the presence of at least one
- Boron compound which may also be alkyl-substituted boric acid derivatives.
- the process described therein and the compositions disclosed for the purpose of producing ceramic materials are not suitable for the production of silicon-containing layers for the semiconductor industry. It has thus surprisingly been found that the stable boron, boron or borinic acid esters are suitable as defined starting compounds for doping silicon-containing layers and lead to good electrical conductivities of corresponding silicon-containing layers suitable for the semiconductor industry.
- the content of boron, boronic or boric acid ester, based on the total formulation, is advantageously 0.0001 to 20 wt .-%, preferably 0.001 to 10 wt .-% and particularly preferably 0.01 to 5 wt .-%.
- Corresponding boron, boron or borinic esters of the generic formula H n B (OR) 3- n where R is C 1 -C 10 -alkyl, C 6 -C 10 -aryl, C 1 -C 8 -aralkyl, halogen, n 0, 1, 2 can be purchased commercially or, for example, selectively prepared in situ from suitable precursor compounds.
- composition of the invention may consist exclusively of the said hydridosilanes and the said boron, boron or borinic acid ester or have further constituents.
- composition preferably contains further constituents in order to achieve advantageous properties.
- the composition preferably comprises at least one solvent.
- Solvents are aliphatic and aromatic hydrocarbons. Further preferred are
- the proportion of solvent based on the total formulation may be 0, 1 to 99.9% by weight, preferably 25 to 95 wt .-% to achieve advantageous properties.
- the hydridosilane is obtainable by thermal oligomerization of a composition comprising, as hydridosilane, essentially at least one hydridosilane of the formula SixH2x + 2 at x 3-20, in the absence of a catalyst at temperatures less than 235 ° C., having a weight-average molecular weight of 290 - 5000 g / mol, layers can be achieved with particularly good properties, if the formulation continues a
- compositions according to the invention are preferably for
- compositions of the invention are printing inks.
- present invention further provides a process for the preparation of the compositions according to the invention, in which the at least one hydridosilane, the at least one compound of the generic formula H n B (OR) 3- n and any other constituents are mixed together.
- composition according to the invention for producing silicon-containing layers.
- Preference is given to the use of the compositions according to the invention for producing doped silicon layers.
- compositions for producing p-doped, especially boron-doped silicon layers are particularly preferred.
- the present invention likewise provides a process for producing doped silicon-containing layers, preferably doped silicon layers, in which at least one composition according to the invention is applied to a substrate and thermally and / or with electromagnetic radiation in a doped silicon-containing layer, preferably a silicon layer is converted.
- compositions according to the invention are advantageously suitable for the production of silicon-containing layers, preferably doped silicon layers, on a multiplicity of substrates.
- silicon-containing layers are understood as meaning, in addition to substantially pure silicon layers, also layers which, in addition to silicon, comprise further semiconductor metals, such as, for example, germanium; furthermore also layers which are silicon oxide, silicon carbide or silicon nitride-containing.
- Preferred substrates consist of glass, quartz glass, graphite, metal, silicon oxide, silicon or a silicon, silicon oxide, indium tin oxide, ZnO: F, ZnO: Al or SnC iF layer located on a heat-compatible support.
- Preferred metals are aluminum, stainless steel, Cr steel, titanium, chromium or molybdenum.
- plastic films z. B. from PEEK, PEN, PET or polyimides can be used as substrates.
- the application of the compositions is preferably carried out via a process selected from printing or coating processes, in particular flexographic / gravure printing, nano-resp. Microimprint, inkjet printing, offset printing, digital offset printing and screen printing, spraying, aerosol assisted chemical vapor deposition, direct liquid injection chemical vapor deposition,
- Spin-coating method so-called “spin-coating”
- dipping method so-called “dip-coating” and method selected from Meniscus Coating, Slit Coating, Slot-Die Coating, and Curtain Coating.
- the coated substrate may be further dried to remove any solvent present.
- Heating temperature is less than 200 ° C.
- a pre-crosslinking of the composition can be carried out with UV irradiation on the substrate.
- the conversion is preferably carried out at temperatures of 200-1000 ° C, preferably 250 to 750 ° C, particularly preferably 300 to 700 ° C. During thermal treatment of the coated substrate, the conversion takes place over a period of 0, 1 ms - 360 min.
- Conversion time is preferably between 0, 1 ms and 10 minutes, more preferably between 1 s and 120 s.
- This relatively fast energetic process can be achieved, for example, by using an IR lamp, a hot plate, an oven, a flashlamp, a plasma
- a conversion can take place by irradiation with UV light.
- the conversion time can preferably be between 1 s and 360 min.
- an enrichment of the silicon-containing layers with hydrogen can be carried out, so-called “hydrogen passivation” of defects in the silicon-containing layer as a result of non-saturated bonds, "dangling bonds", e.g. with reactive hydrogen by the hot-wire method, with a hydrogen-containing plasma, remotely or directly, under vacuum or under atmospheric pressure; or by corona treatment with the supply of hydrogen, wherein under corona treatment, a method for
- drying and / or conversion, as described above, can be carried out in a hydrogen-enriched atmosphere so that the material is hydrogen-rich from the outset.
- compositions of the invention are suitable for a variety of uses. They are particularly well suited - taken alone or in compositions with further components - for the production of electronic or optoelectronic silicon-containing
- compositions according to the invention results in a marked improvement in the technical feature of the so-called electrical
- the electrical dark conductivity in the sense of the present invention is a measure of the quality of the doping due to a lower defect density in the respective coated substrate.
- Example 2 The importance of boron and borinic acid esters, which are also present simultaneously in addition to the boric acid esters, in Example 2, which were detected by NMR spectroscopic measurement, becomes evident by comparison with Example 1.
- Example 1 the doping is carried out exclusively by the boric acid ester B (O-n-Bu) 3 and leads to a registered electrical dark conductivity, which is ten times higher than that of the
- Example 2 Comparative example using the trialkylborane derivative B (Et) 3. Nevertheless, the coated substrate according to Example 2 has a four-powers of ten higher dark conductivity than in Example 1.
- Diborane (10% in N 2) was introduced into a mixture of 1 g NPS and 0.035 g THF at 30 ° C. and oligomerized over a period of 210 min at 30 ° C.
- To 0.1 g of the resulting p-doped NPO was added 0.05 g of cyclooctane and 0.452 g of toluene.
- NMR spectra were measured on a Varian INOVA 300 ( ⁇ : 96.2 MHz) Spectrometer from Varian, Inc. at room temperature. Chemical shifts are indicated compared to an external reference (BF 3 * Et.20).
- the described formulations were at room temperature set and by means of a PE syringe (including syringe filter: 1 ⁇ ) on the substrate (EagleXG glass from Corning Inc.) abandoned.
- the wet films were produced using a Spincoat G3P-8 spin coater from SCS Specialty Coating Systems, Inc. at 25 ° C. The conversion of the wet films was carried out on typical laboratory heating plates from HARRY GESTIGKEIT GmbH. Layer thicknesses were measured by means of a SENpro Eilipsometer of the company
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Abstract
Description
Claims
Applications Claiming Priority (2)
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DE102015225289.2A DE102015225289A1 (de) | 2015-12-15 | 2015-12-15 | Dotierte Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
PCT/EP2016/079885 WO2017102434A1 (de) | 2015-12-15 | 2016-12-06 | Dotierte zusammensetzungen, verfahren zu ihrer herstellung und ihre verwendung |
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US (1) | US10370392B2 (de) |
EP (1) | EP3390278A1 (de) |
JP (1) | JP2019506350A (de) |
KR (1) | KR20180094885A (de) |
CN (1) | CN108367929A (de) |
DE (1) | DE102015225289A1 (de) |
MX (1) | MX2018007270A (de) |
PH (1) | PH12018501247A1 (de) |
TW (1) | TW201736261A (de) |
WO (1) | WO2017102434A1 (de) |
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FR2726551B1 (fr) | 1994-11-09 | 1997-01-31 | Flamel Tech Sa | Procede de preparation de materiaux ceramiques et composition de depart susceptible d'etre mise en oeuvre dans ce procede |
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JP3981528B2 (ja) | 1999-03-30 | 2007-09-26 | セイコーエプソン株式会社 | 太陽電池の製造方法 |
TW465131B (en) | 1999-03-30 | 2001-11-21 | Seiko Epson Corp | Method for forming silicon film |
JP2003313299A (ja) | 2002-04-22 | 2003-11-06 | Seiko Epson Corp | 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法 |
WO2004110929A1 (ja) | 2003-06-13 | 2004-12-23 | Jsr Corporation | シラン重合体およびシリコン膜の形成方法 |
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US20110021736A1 (en) * | 2008-03-04 | 2011-01-27 | Bizhong Zhu | Polyborosiloxane and Method of Preparing Same |
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DE102010040231A1 (de) | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
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2015
- 2015-12-15 DE DE102015225289.2A patent/DE102015225289A1/de not_active Withdrawn
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2016
- 2016-12-06 WO PCT/EP2016/079885 patent/WO2017102434A1/de active Application Filing
- 2016-12-06 EP EP16806103.4A patent/EP3390278A1/de not_active Withdrawn
- 2016-12-06 JP JP2018531089A patent/JP2019506350A/ja active Pending
- 2016-12-06 US US16/062,195 patent/US10370392B2/en not_active Expired - Fee Related
- 2016-12-06 CN CN201680074191.3A patent/CN108367929A/zh active Pending
- 2016-12-06 KR KR1020187016444A patent/KR20180094885A/ko unknown
- 2016-12-06 MX MX2018007270A patent/MX2018007270A/es unknown
- 2016-12-12 TW TW105141072A patent/TW201736261A/zh unknown
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2018
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Also Published As
Publication number | Publication date |
---|---|
PH12018501247A1 (en) | 2019-01-28 |
TW201736261A (zh) | 2017-10-16 |
DE102015225289A1 (de) | 2017-06-22 |
JP2019506350A (ja) | 2019-03-07 |
KR20180094885A (ko) | 2018-08-24 |
MX2018007270A (es) | 2018-11-09 |
US20190023723A1 (en) | 2019-01-24 |
WO2017102434A1 (de) | 2017-06-22 |
CN108367929A (zh) | 2018-08-03 |
US10370392B2 (en) | 2019-08-06 |
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