EP3310499B1 - Process for the mechanical classifying of polysilicon - Google Patents
Process for the mechanical classifying of polysilicon Download PDFInfo
- Publication number
- EP3310499B1 EP3310499B1 EP16711200.2A EP16711200A EP3310499B1 EP 3310499 B1 EP3310499 B1 EP 3310499B1 EP 16711200 A EP16711200 A EP 16711200A EP 3310499 B1 EP3310499 B1 EP 3310499B1
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- EP
- European Patent Office
- Prior art keywords
- polysilicon
- size
- area
- slots
- screen plate
- Prior art date
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 63
- 229920005591 polysilicon Polymers 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 23
- 239000012634 fragment Substances 0.000 claims description 21
- 238000012216 screening Methods 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 7
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 3
- 238000004513 sizing Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- 239000011856 silicon-based particle Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07B—SEPARATING SOLIDS FROM SOLIDS BY SIEVING, SCREENING, SIFTING OR BY USING GAS CURRENTS; SEPARATING BY OTHER DRY METHODS APPLICABLE TO BULK MATERIAL, e.g. LOOSE ARTICLES FIT TO BE HANDLED LIKE BULK MATERIAL
- B07B13/00—Grading or sorting solid materials by dry methods, not otherwise provided for; Sorting articles otherwise than by indirectly controlled devices
- B07B13/04—Grading or sorting solid materials by dry methods, not otherwise provided for; Sorting articles otherwise than by indirectly controlled devices according to size
- B07B13/07—Apparatus in which aggregates or articles are moved along or past openings which increase in size in the direction of movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07B—SEPARATING SOLIDS FROM SOLIDS BY SIEVING, SCREENING, SIFTING OR BY USING GAS CURRENTS; SEPARATING BY OTHER DRY METHODS APPLICABLE TO BULK MATERIAL, e.g. LOOSE ARTICLES FIT TO BE HANDLED LIKE BULK MATERIAL
- B07B1/00—Sieving, screening, sifting, or sorting solid materials using networks, gratings, grids, or the like
- B07B1/12—Apparatus having only parallel elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07B—SEPARATING SOLIDS FROM SOLIDS BY SIEVING, SCREENING, SIFTING OR BY USING GAS CURRENTS; SEPARATING BY OTHER DRY METHODS APPLICABLE TO BULK MATERIAL, e.g. LOOSE ARTICLES FIT TO BE HANDLED LIKE BULK MATERIAL
- B07B1/00—Sieving, screening, sifting, or sorting solid materials using networks, gratings, grids, or the like
- B07B1/28—Moving screens not otherwise provided for, e.g. swinging, reciprocating, rocking, tilting or wobbling screens
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07B—SEPARATING SOLIDS FROM SOLIDS BY SIEVING, SCREENING, SIFTING OR BY USING GAS CURRENTS; SEPARATING BY OTHER DRY METHODS APPLICABLE TO BULK MATERIAL, e.g. LOOSE ARTICLES FIT TO BE HANDLED LIKE BULK MATERIAL
- B07B1/00—Sieving, screening, sifting, or sorting solid materials using networks, gratings, grids, or the like
- B07B1/46—Constructional details of screens in general; Cleaning or heating of screens
Definitions
- the invention relates to a method for the mechanical classification of polysilicon.
- Polycrystalline silicon serves as the starting material for the production of single-crystal silicon for semiconductors according to the Czochralski (CZ) or zone melting (FZ) process, as well as for the production of single or multicrystalline silicon using various drawing and casting processes Production of solar cells for photovoltaics.
- Polycrystalline silicon is usually produced using the Siemens process.
- support bodies usually thin filament rods made of silicon
- a bell-shaped reactor ("Siemens reactor") and a reaction gas containing hydrogen and one or more silicon-containing components are introduced, the polycrystalline silicon being deposited on the support bodies.
- the polycrystalline silicon rods produced in this way are broken into small fragments, which are then usually classified according to size. Screening machines are usually used to sort or classify polycrystalline silicon into different size classes after comminution.
- polycrystalline silicon granulate is produced in a fluidized bed reactor. This is done by fluidizing silicon particles by means of a gas flow in a fluidized bed, which is heated to high temperatures by a heating device. By adding a silicon-containing reaction gas, a pyrolysis reaction takes place on the hot particle surface. Elemental silicon is deposited on the silicon particles and the individual particles increase in diameter.
- the polysilicon granulate is usually divided into two or more fractions or classes (classification) by means of a screening system.
- the smallest sieve fraction (undersized sieve) can then be processed into seed particles in a grinding system and added to the reactor.
- the target fraction is usually packaged and transported to the customer.
- the customer uses the polysilicon granulate i.a. for growing single crystals according to the Czochralski method.
- a sieving machine is generally a machine for sieving, i.e. the separation (separation) of solid mixtures according to grain size.
- plane vibrating screening machines i.e. the separation (separation) of solid mixtures according to grain size.
- the screening machines are mostly driven electromagnetically or by unbalance motors or gears.
- the movement of the screen lining is used to transport the feed material in the longitudinal direction of the screen and to allow the fine fraction to pass through the screen openings.
- throwing screening machines also have a vertical screening acceleration in addition to the horizontal.
- a special type is the multi-deck screening machine, which can fractionate several grain sizes at the same time. They are designed for a variety of sharp separations in the medium to fine grain range.
- the drive principle is based on two unbalance motors working in opposite directions, which generate a linear vibration.
- the material to be sieved moves in a straight line over the horizontal dividing surface.
- the machine works with low vibration acceleration. Thanks to a modular system, a large number of screen decks can be put together to form a screen stack. This means that, if necessary, different grain sizes can be produced in a single machine without having to change the screen linings. By repeating the same screen deck sequences several times, the material to be screened can be offered a large screen area.
- US 8021483 B2 or DE60310627 T2 discloses an apparatus for sorting polycrystalline silicon pieces including a vibration motor assembly and a stepped tray classifier attached to the vibration motor assembly.
- the vibration motor arrangement ensures that the silicon pieces move over a first base containing grooves.
- dust is removed by a stream of air through a perforated plate.
- the silicon pieces are deposited in holes of grooves or remain on ridges of the grooves.
- pieces of silicon that are smaller than a gap between the first and the following floor fall through this onto a conveyor belt. Larger pieces of silicon move across the gap and fall onto the second tray.
- US 2007/0235574 A1 discloses an apparatus for comminuting and sorting polycrystalline silicon, comprising a feed device for a polysilicon coarse fraction into a crusher system, the crusher system, and a sorting system for sorting the polysilicon fragments, the apparatus being provided with a control which has a variable setting at least a crushing parameter in the crushing system and / or at least one sorting parameter in the sorting system.
- the sorting system particularly preferably consists of a multi-stage mechanical screening system and a multi-stage optoelectronic separation system.
- US 2009/0120848 A1 describes a device that enables flexible classification of broken polycrystalline silicon, characterized in that it comprises a mechanical screening system and an optoelectronic sorting system, the polycrystalline being separated by the mechanical screening system into a fine silicon fraction and a residual silicon fraction and the silicon -Residual fraction is separated into further fractions via an optoelectronic sorting system.
- the mechanical screening system is preferably a vibrating screening machine that is driven by an unbalance motor. Mesh and perforated screens are preferred as screen covering.
- US 2012/0198793 A1 discloses a method for metering and packaging polysilicon fragments, wherein a product stream of polysilicon fragments is transported over a conveyor chute, separated into coarse and fine fragments by means of at least one sieve, weighed by means of a metering scale and adjusted to a target weight is metered, the at least one sieve and the metering scales at least partially comprise a hard metal on their surfaces.
- US 2014/0130455 A1 discloses, in the context of a method for packaging polycrystalline silicon fragments, that in a metering system fine components, that is to say the finest particles and chippings of the polysilicon, are separated off by means of a sieve.
- the screen can be a perforated plate, a bar screen or an optopneumatic sorting system.
- the screens used comprise at least partially a low-contamination material such.
- the screens can be partially or fully provided with a coating of titanium nitride, titanium carbide, aluminum titanium nitride or DLC (Diamond Like Carbon).
- Bar screens usually comprise bars running in parallel, the screen passage being determined by the distance between the bars and the screen overflow emerging at the free end of the bars.
- the sieve bars are arranged in one plane and the material to be sieved is transported in that the sieve bars are inclined downward at their free end.
- Separating devices tend to clog when separating fines in the packaging machines.
- This also applies to the well-known step floor classifiers in which fractions are attempted to be separated using gaps between the floors.
- step floor classifiers in which fractions are attempted to be separated using gaps between the floors.
- separation devices have to be cleaned cyclically and thus do not achieve a continuous, constant separation accuracy.
- this requires system downtimes and additional effort for cleaning.
- no exact separation is achieved, especially since, in addition to the fraction to be separated, a considerable proportion of oversizes is also separated off. This also leads to an undesired reduction in the yield of the target fraction.
- DE19822996 C1 discloses a separation device for elongated solid parts, which has a vibrating base with a number of longitudinal grooves extending in the conveying direction, adjoining the sieve openings for separating the elongated solid parts (18), characterized in that the groove depth of the longitudinal grooves (12) in the conveying direction (6) decreases.
- a further advantageous embodiment provides for the sieve openings to widen in the conveying direction.
- the arrangement described allows metal wires to be removed from pyrolysis residues such as those from construction sites or municipal waste.
- the groove depth is initially designed in such a way that particles collect in the grooves, especially the long wires from the waste to be recycled. Then the groove depth decreases up to a planar state clearly decreases. As a result, the long wires can be cut off.
- the object of the invention resulted from the problem described.
- the polysilicon on a sieve plate comprising a feed area for polysilicon, a profiled area with peaks and valleys, an area with slots, the slots adjoining the sinks, and a removal area, the slots opening in the direction of the removal area enlarge, is abandoned, wherein the sieve plate is set in vibration in such a way that the polysilicon executes a movement in the direction of the removal area, whereby small-scale polysilicon collects in the depressions of the sieve plate and falls through the slots of the sieve plate and is thereby separated from the applied polysilicon,
- the sieve plate is inclined at an angle of 5 to 20 ° to the horizontal, the tips of the profiled area also continuing into the area with slots so that the entire sieve plate is profiled, but the sieve plate at its rear end in the conveying direction Has slots instead of sinks where the depth and angle of the depressions of the profiled area and the size of the slots are designed so that either finely divided silicon, which can be separated by means of
- the polysilicon is polycrystalline fragments.
- Small-sized polysilicon is to be understood as a subset of the applied amount of polysilicon that is to be separated off by means of the screening system.
- the small-sized polysilicon thus corresponds to the fraction to be separated.
- the abandoned polysilicon is polysilicon fragments with a fine fraction. The fine fraction should be separated with the sieve plate.
- the sieve plate includes a feed area in which the polysilicon is fed.
- the polysilicon is conveyed to the screening system by means of a conveyor trough and delivered to the feed area of the screen plate.
- the sieve plate also comprises a profiled area with grooves or grooves or generally depressions and elevations, so that the profiled area has depressions and peaks.
- the abandoned polysilicon comprises fragments of size classes 3 to 5 and fines according to the above definition. During the movement of the polysilicon on the profiled area, fines collect in the depressions of the profiled area.
- the applied polysilicon comprises fragments of size classes 0 to 2 and fine fraction according to the above. Definition. During the movement of the polysilicon on the profiled area, the fine fraction contained in the polysilicon collects in the depressions of the profiled area.
- the sieve plate comprises - adjoining the profiled area - an area with slots.
- the slots are arranged directly behind the depressions of the profiled area in the conveying direction.
- the tips of the profiled area continue into the area with slots, so that the entire screen plate is profiled, but the screen plate has slots instead of depressions at its rear end in the conveying direction.
- the fine fraction or small fragments / particles are thus separated off via the slots in the sieve plate.
- the separated fines or small fragments / particles are taken up by a collecting container arranged below the slots in the sieve plate.
- the removal area is connected to a conveyor trough through which the larger fragments are removed.
- another sieve plate can then follow in order to separate a further fraction from the polysilicon.
- the separation accuracy is significantly higher than with bar screens, which means that significantly less faulty grain is separated and thus the yield increases.
- the disclosure therefore provides a sieve plate that can be used in all types of sieve systems, in which the fine fraction or small-sized silicon collects in depressions in the first area of the sieve plate and is deliberately separated in the last area of the sieve plate by widening sieve slots.
- the sieve plate consists of one or more materials selected from the group consisting of plastic, ceramic, glass, diamond, amorphous carbon, silicon or metal.
- the sieve plate is lined or coated with one or more materials selected from the group consisting of plastic, polyurethane, ceramic, glass, diamond, amorphous carbon and silicon.
- the parts of the screen plate which come into contact with the polysilicon are lined or coated with one or more materials selected from the group consisting of plastic, polyurethane, ceramic, glass, diamond, amorphous carbon and silicon.
- the sieve plate consists of hard metal or is coated or lined with a hard metal.
- the sieve plate comprises a metallic base body and a coating or lining made of one or more materials selected from the group consisting of plastic, ceramic, glass, diamond, amorphous carbon and silicon.
- the plastic used in the aforementioned embodiments is selected from the group consisting of PVC (polyvinyl chloride), PP (polypropylene), PE (polyethylene), PU (polyurethane), PFA (perfluoroalkoxy), PVDF (polyvinylidene fluoride) and PTFE (polytetrafluoroethylene).
- PVC polyvinyl chloride
- PP polypropylene
- PE polyethylene
- PU polyurethane
- PFA perfluoroalkoxy
- PVDF polyvinylidene fluoride
- PTFE polytetrafluoroethylene
- the sieve plate comprises a coating of titanium nitride, titanium carbide, aluminum titanium nitride or DLC (Diamond Like Carbon).
- the size of the slots depends on the fraction to be separated and can be up to 200 mm.
- a separation step should take place at 10 mm (sieving off polysilicon smaller than 10 mm), the slots having a width of 10 mm at their end (beginning of the removal area).
- the design of the profiled area of the sieve plate depends on the fraction to be separated.
- the depth and angle of the depressions in the profiled area must be designed so that the fraction to be separated, e.g. the fine fraction collects there.
- the angles of the depressions can be flat to extremely acute and be larger than 1 ° and smaller than 180 °.
- the depth of the depressions can be from 1 to 200 mm.
- an angle of 45 ° and a depth of 20 mm are suitable for the separation of a 10 mm fraction.
- the excitation of the sieve plate can be done either with a plane vibrating or throwing sieve machine. Vibration drives (such as magnetic drives) or unbalance drives can also be provided.
- the sieve plate is inclined to the horizontal.
- the angle of inclination is between 5 and 20 °, since gravity supports the conveyance via the sieve plate.
- Fig. 1 shows the schematic structure of a sieve plate.
- the sieve plate 1 comprises a feed area 2 in which the polysilicon is fed.
- the polysilicon can, for example, be conveyed to the screening system by means of a conveyor trough and delivered to the feed area 2 of the screen plate 1.
- the sieve plate 1 also comprises a profiled area 3.
- This profiled area 3 provides grooves or grooves or depressions of a different type so that the profiled area 3 has depressions 31 and peaks 32.
- the fine fraction contained in the polysilicon collects during the movement of the polysilicon on the profiled region 3 in the depressions 31 of the profiled region 3.
- the sieve plate 1 comprises - adjoining the profiled area 3 - an area 4 with slots 41.
- the slots 41 are arranged immediately behind (in the conveying direction) the depressions 31 of the profiled area 3.
- the fine fractions of the polysilicon located in the depressions 31 of the profiled region 3 are guided in a targeted manner to the slots 41 of the region 4.
- the tips 32 of the profiled area 3 also continue in the area 4, so that the entire screen plate 1 is profiled, but has slots 41 instead of depressions 31 in the area 4.
- the fine fraction is thus separated off via the slots 41 in the sieve plate 1.
- the separated fines can be received, for example, by a collecting container arranged below the slots 41 in the sieve plate 1.
- the slots 41 widen in the conveying direction. It has been shown that this can effectively avoid clogging of the openings.
Landscapes
- Combined Means For Separation Of Solids (AREA)
- Silicon Compounds (AREA)
- Apparatuses For Bulk Treatment Of Fruits And Vegetables And Apparatuses For Preparing Feeds (AREA)
Description
Gegenstand der Erfindung ist ein Verfahren zum mechanischen Klassieren von Polysilicium.The invention relates to a method for the mechanical classification of polysilicon.
Polykristallines Silicium (kurz: Polysilicium) dient als Ausgangsmaterial zur Herstellung von einkristallinem Silicium für Halbleiter nach dem Czochralski(CZ)- oder Zonenschmelz(FZ)-Verfahren, sowie zur Herstellung von ein- oder multikristallinem Silicium nach verschiedenen Zieh- und Gieß-Verfahren zur Produktion von Solarzellen für die Photovoltaik.Polycrystalline silicon (polysilicon for short) serves as the starting material for the production of single-crystal silicon for semiconductors according to the Czochralski (CZ) or zone melting (FZ) process, as well as for the production of single or multicrystalline silicon using various drawing and casting processes Production of solar cells for photovoltaics.
Polykristallines Silicium wird in der Regel mittels des Siemens-Verfahrens hergestellt. Bei diesem Verfahren werden in einem glockenförmigen Reaktor ("Siemens-Reaktor") Trägerkörper, üblicherweise dünne Filamentstäbe aus Silicium, durch direkten Stromdurchgang erhitzt und ein Reaktionsgas enthaltend Wasserstoff und eine oder mehrere siliciumhaltige Komponenten eingeleitet, wobei sich das polykristalline Silicium auf den Trägerkörpern abscheidet.Polycrystalline silicon is usually produced using the Siemens process. In this process, support bodies, usually thin filament rods made of silicon, are heated by direct current passage in a bell-shaped reactor ("Siemens reactor") and a reaction gas containing hydrogen and one or more silicon-containing components are introduced, the polycrystalline silicon being deposited on the support bodies.
Für die meisten Anwendungen werden die derart hergestellten polykristallinen Siliciumstäbe auf kleine Bruchstücke gebrochen, welche üblicherweise anschließend nach Größen klassiert werden. Üblicherweise werden Siebmaschinen eingesetzt, um polykristallines Silicium nach der Zerkleinerung in unterschiedliche Größenklassen zu sortieren bzw. zu klassieren.For most applications, the polycrystalline silicon rods produced in this way are broken into small fragments, which are then usually classified according to size. Screening machines are usually used to sort or classify polycrystalline silicon into different size classes after comminution.
Alternativ wird polykristallines Siliciumgranulat in einem Wirbelschichtreaktor produziert. Dies geschieht durch Fluidisierung von Siliciumpartikeln mittels einer Gasströmung in einer Wirbelschicht, wobei diese über eine Heizvorrichtung auf hohe Temperaturen aufgeheizt wird. Durch Zugabe eines siliciumhaltigen Reaktionsgases erfolgt eine Pyrolysereaktion an der heißen Partikeloberfläche. Dabei scheidet sich elementares Silicium auf den Siliciumpartikeln ab und die einzelnen Partikel wachsen im Durchmesser an.Alternatively, polycrystalline silicon granulate is produced in a fluidized bed reactor. This is done by fluidizing silicon particles by means of a gas flow in a fluidized bed, which is heated to high temperatures by a heating device. By adding a silicon-containing reaction gas, a pyrolysis reaction takes place on the hot particle surface. Elemental silicon is deposited on the silicon particles and the individual particles increase in diameter.
Das Polysiliciumgranulat wird üblicherweise nach dessen Herstellung mittels einer Siebanlage in zwei oder mehr Fraktionen oder Klassen geteilt (Klassierung). Die kleinste Siebfraktion (Siebunterkorn) kann anschließend in einer Mahlanlage zu Keimpartikeln verarbeitet und dem Reaktor zugegeben werden. Die Siebzielfraktion wird üblicherweise verpackt und zum Kunden transportiert. Der Kunde verwendet das Polysiliciumgranulat u.a. zum Züchten von Einkristallen nach dem Czochralski-Verfahren.After its production, the polysilicon granulate is usually divided into two or more fractions or classes (classification) by means of a screening system. The smallest sieve fraction (undersized sieve) can then be processed into seed particles in a grinding system and added to the reactor. The target fraction is usually packaged and transported to the customer. The customer uses the polysilicon granulate i.a. for growing single crystals according to the Czochralski method.
Eine Siebmaschine ist allgemein eine Maschine zum Sieben, also der Trennung (Separation) von Feststoffgemischen nach Korngrößen. Nach Bewegungscharakteristik wird zwischen Planschwingsiebmaschinen und Wurfsiebmaschinen unterschieden. Der Antrieb der Siebmaschinen erfolgt meist elektromagnetisch bzw. durch Unwuchtmotoren oder -getriebe. Die Bewegung des Siebbelags dient dem Weitertransport des Aufgabeguts in Sieblängsrichtung und dem Durchtritt der Feinfraktion durch die Sieböffnungen. Im Gegensatz zu Planschwingsiebmaschinen tritt bei Wurfsiebmaschinen neben der horizontalen auch eine vertikale Siebbeschleunigung auf.A sieving machine is generally a machine for sieving, i.e. the separation (separation) of solid mixtures according to grain size. According to the movement characteristics, a distinction is made between plane vibrating screening machines and throwing screening machines. The screening machines are mostly driven electromagnetically or by unbalance motors or gears. The movement of the screen lining is used to transport the feed material in the longitudinal direction of the screen and to allow the fine fraction to pass through the screen openings. In contrast to planar vibrating screening machines, throwing screening machines also have a vertical screening acceleration in addition to the horizontal.
Eine spezielle Art ist die Mehrdecksiebmaschine, die gleichzeitig mehrere Korngrößen fraktionieren kann. Sie sind konzipiert für eine Vielzahl scharfer Trennungen im Mittelbis Feinstkornbereich. Das Antriebsprinzip beruht bei Mehrdeck-Plansiebmaschinen auf zwei gegenläufig arbeitenden Unwuchtmotoren, die eine lineare Schwingung erzeugen. Das Siebgut bewegt sich geradlinig über die horizontale Trennfläche. Dabei arbeitet die Maschine mit geringer Schwingbeschleunigung. Durch ein Baukastensystem können eine Vielzahl von Siebdecks zu einem Siebstapel zusammengestellt werden. Somit können im Bedarfsfall unterschiedliche Körnungen in einer einzigen Maschine hergestellt werden, ohne dass Siebbeläge gewechselt werden müssen. Durch mehrfache Wiederholung gleicher Siebdeckfolgen kann dem Siebgut viel Siebfläche angeboten werden.A special type is the multi-deck screening machine, which can fractionate several grain sizes at the same time. They are designed for a variety of sharp separations in the medium to fine grain range. In the case of multi-deck planar screening machines, the drive principle is based on two unbalance motors working in opposite directions, which generate a linear vibration. The material to be sieved moves in a straight line over the horizontal dividing surface. The machine works with low vibration acceleration. Thanks to a modular system, a large number of screen decks can be put together to form a screen stack. This means that, if necessary, different grain sizes can be produced in a single machine without having to change the screen linings. By repeating the same screen deck sequences several times, the material to be screened can be offered a large screen area.
Auch
Die mechanische Siebanlage ist vorzugsweise eine Schwingsiebmaschine ist, die über einen Unwuchtmotor angetrieben wird. Als Siebbelag sind Maschen- und Lochsiebe bevorzugt.The mechanical screening system is preferably a vibrating screening machine that is driven by an unbalance motor. Mesh and perforated screens are preferred as screen covering.
Die verwendeten Siebe umfassen an ihren Oberflächen wenigstens teilweise einen kontaminationsarmen Werkstoff wie z. B. ein Hartmetall oder Keramik/Carbide.. Die Siebe können teilweise oder vollflächig mit einer Beschichtung aus Titannitrid, Titancarbid, Aluminiumtitannitrid oder DLC (Diamond Like Carbon) versehen sein.
The screens used comprise at least partially a low-contamination material such. B. a hard metal or ceramic / carbide .. The screens can be partially or fully provided with a coating of titanium nitride, titanium carbide, aluminum titanium nitride or DLC (Diamond Like Carbon).
Stangensiebe umfassen üblicherweise parallel verlaufende Stangen, wobei der Siebdurchgang durch den Abstand der Stangen bestimmt ist und der Siebüberlauf am freien Ende der Stangen austritt. Bei den bekannten Stangensieben sind die Siebstangen in einer Ebene angeordnet und der Transport des Siebgutes erfolgt dadurch, dass die Siebstangen zu ihrem freien Ende abwärts geneigt sind.Bar screens usually comprise bars running in parallel, the screen passage being determined by the distance between the bars and the screen overflow emerging at the free end of the bars. In the known bar sieves, the sieve bars are arranged in one plane and the material to be sieved is transported in that the sieve bars are inclined downward at their free end.
Abtrennvorrichtungen nach dem Stand der Technik wie Stangensiebe neigen bei der Feinanteilabtrennung in den Verpackungsmaschinen zum Verstopfen. Dies gilt auch für die bekannten Stufenbodenklassierer, bei denen Fraktionen über Spalte zwischen den Böden abzutrennen versucht werden.
Dies hat zur Folge, dass diese Abtrennvorrichtungen zyklisch gereinigt werden müssen und dadurch keine kontinuierliche, gleichbleibende Trenngenauigkeit erreichen.
Zudem erfordert dies Anlagenstillständen und zusätzlichen Aufwand für die Reinigung.
Nachteilig ist auch, dass keine exakte Trennung erreicht wird, zumal neben der abzutrennenden Fraktion stets ein erheblicher Anteil an Übergrößen mit abgetrennt wird. Somit kommt es auch zu einer ungewollten Reduzierung der Ausbeute der Zielfraktion.Separating devices according to the state of the art, such as bar screens, tend to clog when separating fines in the packaging machines. This also applies to the well-known step floor classifiers in which fractions are attempted to be separated using gaps between the floors.
The consequence of this is that these separation devices have to be cleaned cyclically and thus do not achieve a continuous, constant separation accuracy.
In addition, this requires system downtimes and additional effort for cleaning.
It is also disadvantageous that no exact separation is achieved, especially since, in addition to the fraction to be separated, a considerable proportion of oversizes is also separated off. This also leads to an undesired reduction in the yield of the target fraction.
Durch die beschriebene Anordnung lassen sich Metalldrähte aus Pyrolyserückständen, wie sie beispielsweise von Baustellen oder Siedlungsabfällen stammen, entfernen.The arrangement described allows metal wires to be removed from pyrolysis residues such as those from construction sites or municipal waste.
Die Rillentiefe ist zunächst so ausgestaltet, dass sich in den Rillen Partikel ansammeln, insbesondere die langen Drähte aus dem zu recycelnden Abfall. Dann nimmt die Rillentiefe ab bis hin zu einem planaren Zustand deutlich abnimmt. Dies hat zur Folge, dass die langen Drähte abgetrennt werden können.The groove depth is initially designed in such a way that particles collect in the grooves, especially the long wires from the waste to be recycled. Then the groove depth decreases up to a planar state clearly decreases. As a result, the long wires can be cut off.
Aus der beschriebenen Problematik ergab sich die Aufgabenstellung der Erfindung. Die Aufgabe der Erfindung wird gelöst durch ein Verfahren zum mechanischen Klassieren von Polysilicium, bestehend aus Bruchstücken der Größenklassen
Beim Polysilicium handelt es sich um polykristalline Bruchstücke.The polysilicon is polycrystalline fragments.
Unter kleinteiligem Polysilicium ist eine Teilmenge aus der aufgegebenen Menge an Polysilicium zu verstehen, die mittels der Siebanlage abgetrennt werden soll. Das kleinteilige Polysilicium entspricht also der abzutrennenden Fraktion. Erfindungsgemäß handelt es sich bei dem aufgegebenen Polysilicium um Polysiliciumbruchstücke mit Feinanteil. Der Feinanteil soll mit der Siebplatte abgetrennt werden.Small-sized polysilicon is to be understood as a subset of the applied amount of polysilicon that is to be separated off by means of the screening system. The small-sized polysilicon thus corresponds to the fraction to be separated. According to the invention, the abandoned polysilicon is polysilicon fragments with a fine fraction. The fine fraction should be separated with the sieve plate.
Die Größenklasse von Polysiliciumbruchstücken ist als längste Entfernung zweier Punkte auf der Oberfläche eines Siliciumbruchstücks (=max. Länge) definiert:
Nachfolgend sollen für die Bruchgrößen 3 bis 5 alle Bruchstücke oder Partikel aus Silicium, die eine solche Größe aufweisen, dass sie sich mittels eines Maschensiebs mit quadratischen Maschen einer Größe von 8 mm x 8 mm abtrennen lassen, als Feinanteil bezeichnet werden.In the following, for the chunk sizes 3 to 5, all fragments or particles of silicon that are of such a size that they can be separated by means of a mesh screen with square meshes with a size of 8 mm x 8 mm are referred to as fines.
Für die Bruchgrößen 0 bis 2 gilt selbige Definition, wobei die Maschenweite hier mit 1 mm x 1 mm definiert ist.The same definition applies to the fraction sizes 0 to 2, whereby the mesh size is defined here as 1 mm x 1 mm.
Die Siebplatte umfasst einen Aufgabebereich, in dem das Polysilicium aufgegeben wird.The sieve plate includes a feed area in which the polysilicon is fed.
In einer Ausführungsform wird das Polysilicium mittels einer Förderrinne zur Siebanlage befördert und an den Aufgabebereich der Siebplatte abgegeben.In one embodiment, the polysilicon is conveyed to the screening system by means of a conveyor trough and delivered to the feed area of the screen plate.
Die Siebplatte umfasst zudem einen profilierten Bereich mit Rillen oder Nuten oder allgemein Vertiefungen und Erhebungen, so dass der profilierte Bereich Senken und Spitzen aufweist.The sieve plate also comprises a profiled area with grooves or grooves or generally depressions and elevations, so that the profiled area has depressions and peaks.
Während der Bewegung des Polysiliciums auf dem profilierten Bereich sammeln sich kleine Bruchstücke oder kleine Siliciumpartikel (klein in Bezug auf die Zielfraktion) oder Feinanteil in den Senken des profilierten Bereichs.During the movement of the polysilicon on the profiled area, small fragments or small silicon particles (small in relation to the target fraction) or fines collect in the depressions of the profiled area.
In einer Ausführungsform umfasst das aufgegebene Polysilicium Bruchstücke der Größenklassen 3 bis 5 und Feinanteil gemäß o.g. Definition. Während der Bewegung des Polysiliciums auf dem profilierten Bereich sammelt sich Feinanteil in den Senken des profilierten Bereichs.In one embodiment, the abandoned polysilicon comprises fragments of size classes 3 to 5 and fines according to the above definition. During the movement of the polysilicon on the profiled area, fines collect in the depressions of the profiled area.
In einer Ausführungsform umfasst das aufgegebene Polysilicium Bruchstücke der Größenklassen 0 bis 2 und Feinanteil gemäß o.g. Definition. Während der Bewegung des Polysiliciums auf dem profilierten Bereich sammelt sich der im Polysilicium enthaltene Feinanteil in den Senken des profilierten Bereichs.In one embodiment, the applied polysilicon comprises fragments of size classes 0 to 2 and fine fraction according to the above. Definition. During the movement of the polysilicon on the profiled area, the fine fraction contained in the polysilicon collects in the depressions of the profiled area.
Die Siebplatte umfasst - an den profilierten Bereich anschließend - einen Bereich mit Schlitzen. Die Schlitze sind in Förderrichtung unmittelbar hinter den Senken des profilierten Bereichs angeordnet. Dadurch werden die in den Senken des profilierten Bereichs befindlichen Feinanteile des Polysiliciums gezielt zu den Schlitzen des Bereichs geführt.The sieve plate comprises - adjoining the profiled area - an area with slots. The slots are arranged directly behind the depressions of the profiled area in the conveying direction. As a result, the fine fractions of the polysilicon located in the depressions of the profiled area are specifically guided to the slots in the area.
Erfindungsgemäß setzen sich die Spitzen des profilierten Bereichs auch in den Bereich mit Schlitzen fort, so dass die gesamte Siebplatte profiliert ist, wobei die Siebplatte jedoch an seinem in Förderrichtung hinteren Ende Schlitze statt Senken aufweist.According to the invention, the tips of the profiled area continue into the area with slots, so that the entire screen plate is profiled, but the screen plate has slots instead of depressions at its rear end in the conveying direction.
Die Abtrennung des Feinanteils oder kleiner Bruchstücke/Partikel erfolgt somit über die Schlitze der Siebplatte.The fine fraction or small fragments / particles are thus separated off via the slots in the sieve plate.
In einer Ausführungsform werden die abgetrennten Feinanteile oder kleinen Bruchstücke/Partikel durch einen unterhalb der Schlitze der Siebplatte angeordneten Auffangbehälter aufgenommen.In one embodiment, the separated fines or small fragments / particles are taken up by a collecting container arranged below the slots in the sieve plate.
Größere Bruchstücke werden im profilierten Bereich über die Spitzen zum Entnahmebereich geführt.Larger fragments are guided in the profiled area over the tips to the removal area.
In einer Ausführungsform ist der Entnahmebereich mit einer Förderrinne verbunden, über die die größeren Bruchstücke abgeführt werden. Ebenso kann sich eine weitere Siebplatte anschließend, um einen weitere Fraktion vom Polysilicium abzutrennen.In one embodiment, the removal area is connected to a conveyor trough through which the larger fragments are removed. Likewise, another sieve plate can then follow in order to separate a further fraction from the polysilicon.
Die Schlitze weiten sich in Förderrichtung. Überraschenderweise kann dadurch ein Verstopfen der Öffnungen / Schlitze effektiv vermieden werden. Somit treten die damit verbundenen und im Stand der Technik beobachteten Probleme, die einen hohen Aufwand bedeuteten, nicht auf.The slots widen in the conveying direction. Surprisingly, clogging of the openings / slots can thereby be effectively avoided. So they step with it problems associated and observed in the prior art, which meant a lot of effort, do not arise.
Die Trenngenauigkeit ist deutlich höher als bei Stangensieben, womit deutlich weniger Fehlkorn abgetrennt wird und somit die Ausbeute steigt.The separation accuracy is significantly higher than with bar screens, which means that significantly less faulty grain is separated and thus the yield increases.
Die Offenbarung sieht also eine Siebplatte vor, die in allen Arten von Siebanlagen eingesetzt werden kann, bei welcher sich im ersten Bereich der Siebplatte der Feinanteil oder kleinteiliges Silicium in Senken sammelt und im letzten Bereich der Siebplatte gezielt durch sich weitende Siebschlitze abgetrennt wird.The disclosure therefore provides a sieve plate that can be used in all types of sieve systems, in which the fine fraction or small-sized silicon collects in depressions in the first area of the sieve plate and is deliberately separated in the last area of the sieve plate by widening sieve slots.
In einer Ausführungsform besteht die Siebplatte aus einem oder mehreren Materialien ausgewählt aus der Gruppe bestehend aus Kunststoff, Keramik, Glas, Diamant, amorpher Kohlenstoff, Silicium oder Metall.In one embodiment, the sieve plate consists of one or more materials selected from the group consisting of plastic, ceramic, glass, diamond, amorphous carbon, silicon or metal.
In einer Ausführungsform ist die Siebplatte mit einem oder mehreren Materialien ausgewählt aus der Gruppe bestehend aus Kunststoff, Polyurethan, Keramik, Glas, Diamant, amorpher Kohlenstoff und Silicium ausgekleidet oder beschichtet.In one embodiment, the sieve plate is lined or coated with one or more materials selected from the group consisting of plastic, polyurethane, ceramic, glass, diamond, amorphous carbon and silicon.
In einer Ausführungsform sind die mit dem Polysilicium in Berührung kommenden Teile der Siebplatte mit einem oder mehreren Materialien ausgewählt aus der Gruppe bestehend aus Kunststoff, Polyurethan, Keramik, Glas, Diamant, amorpher Kohlenstoff und Silicium ausgekleidet oder beschichtet.In one embodiment, the parts of the screen plate which come into contact with the polysilicon are lined or coated with one or more materials selected from the group consisting of plastic, polyurethane, ceramic, glass, diamond, amorphous carbon and silicon.
In einer Ausführungsform besteht die Siebplatte aus Hartmetall oder ist mit einem Hartmetall beschichtet oder ausgekleidet.In one embodiment, the sieve plate consists of hard metal or is coated or lined with a hard metal.
In einer Ausführungsform umfasst die Siebplatte einen metallischen Grundkörper sowie eine Beschichtung oder Auskleidung aus einem oder mehreren Materialien ausgewählt aus der Gruppe bestehend aus Kunststoff, Keramik, Glas, Diamant, amorpher Kohlenstoff und Silicium.In one embodiment, the sieve plate comprises a metallic base body and a coating or lining made of one or more materials selected from the group consisting of plastic, ceramic, glass, diamond, amorphous carbon and silicon.
In einer Ausführungsform der Erfindung wird der bei den zuvor genannten Ausführungen verwendete Kunststoff ausgewählt aus der Gruppe bestehend aus PVC (Polyvinylchlorid), PP (Polypropylen), PE (Polyethylen), PU (Polyurethan), PFA (Perfluoralkoxy), PVDF (Polyvinylidenfluorid) und PTFE (Polytetrafluorethylen).In one embodiment of the invention, the plastic used in the aforementioned embodiments is selected from the group consisting of PVC (polyvinyl chloride), PP (polypropylene), PE (polyethylene), PU (polyurethane), PFA (perfluoroalkoxy), PVDF (polyvinylidene fluoride) and PTFE (polytetrafluoroethylene).
In einer Ausführungsform umfasst die Siebplatte eine Beschichtung aus Titannitrid, Titancarbid, Aluminiumtitannitrid oder DLC (Diamond Like Carbon).In one embodiment, the sieve plate comprises a coating of titanium nitride, titanium carbide, aluminum titanium nitride or DLC (Diamond Like Carbon).
Die Größe der Schlitze ist abhängig von der abzutrennenden Fraktion und kann bis zu 200 mm betragen.The size of the slots depends on the fraction to be separated and can be up to 200 mm.
In einer Ausführungsform soll ein Trennschritt bei 10 mm erfolgen (Absieben von Polysilicium kleiner als 10 mm), wobei die Schlitze an ihrem Ende (Beginn des Entnahmebereichs) eine Weite von 10 mm aufweisen.In one embodiment, a separation step should take place at 10 mm (sieving off polysilicon smaller than 10 mm), the slots having a width of 10 mm at their end (beginning of the removal area).
Die Ausführung des profilierten Bereichs der Siebplatte ist abhängig von der abzutrennenden Fraktion. Tiefe und Winkel der Senken des profilierten Bereichs sind so auszugestalten, dass sich die abzutrennende Fraktion, also z.B. der Feinanteil dort sammelt.The design of the profiled area of the sieve plate depends on the fraction to be separated. The depth and angle of the depressions in the profiled area must be designed so that the fraction to be separated, e.g. the fine fraction collects there.
Die Winkel der Senken können dabei flach bis extrem spitz sein und größer als 1° und kleiner als180° betragen.The angles of the depressions can be flat to extremely acute and be larger than 1 ° and smaller than 180 °.
Die Tiefe der Senken kann von 1 bis 200 mm betragen.The depth of the depressions can be from 1 to 200 mm.
Beispielweise sind für die Abtrennung einer 10 mm Fraktion ein Winkel von 45° und eine Tiefe von 20 mm geeignet.For example, an angle of 45 ° and a depth of 20 mm are suitable for the separation of a 10 mm fraction.
Die Erregung der Siebplatte kann sowohl mit einer Planschwing- oder auch Wurfsiebmaschine erfolgen. Ebenso können Vibrationsantriebe (wie z.B. Magnetantriebe) oder Unwuchtantriebe vorgesehen sein.The excitation of the sieve plate can be done either with a plane vibrating or throwing sieve machine. Vibration drives (such as magnetic drives) or unbalance drives can also be provided.
Erfindungsgemäß ist die Siebplatte gegen die Waagerechte geneigt.According to the invention, the sieve plate is inclined to the horizontal.
Der Neigungswinkel beträgt zwischen 5 und 20°, da dabei die Schwerkraft die Förderung über die Siebplatte unterstützt.The angle of inclination is between 5 and 20 °, since gravity supports the conveyance via the sieve plate.
- 11
- SiebplatteSieve plate
- 22
- AufgabebereichTask area
- 33
- Profilierter Bereich der SiebplatteProfiled area of the sieve plate
- 3131
- Senken des profilierten BereichsLowering the profiled area
- 3232
- Spitzen des profilierten BereichsTips of the profiled area
- 44th
- Bereich mit SchlitzenSlotted area
- 4141
- Schlitzslot
- 55
- EntnahmebereichRemoval area
Die Siebplatte 1 umfasst einen Aufgabebereich 2, in dem das Polysilicium aufgegeben wird. Das Polysilicium kann beispielsweise mittels einer Förderrinne zur Siebanlage befördert und an den Aufgabebereich 2 der Siebplatte 1 abgegeben werden.The sieve plate 1 comprises a
Die Siebplatte 1 umfasst zudem einen profilierten Bereich 3. Dieser profilierte Bereich 3 sieht Rillen oder Nuten oder Vertiefungen anderer Art vor, so dass der profilierte Bereich 3 Senken 31 und Spitzen 32 aufweist.The sieve plate 1 also comprises a profiled area 3. This profiled area 3 provides grooves or grooves or depressions of a different type so that the profiled area 3 has
Der im Polysilicium enthaltene Feinanteil sammelt sich während der Bewegung des Polysiliciums auf dem profilierten Bereich 3 in den Senken 31 des profilierten Bereichs 3.The fine fraction contained in the polysilicon collects during the movement of the polysilicon on the profiled region 3 in the
Die Siebplatte 1 umfasst - an den profilierten Bereich 3 anschließend - einen Bereich 4 mit Schlitzen 41. Die Schlitze 41 sind unmittelbar hinter (In Förderrichtung) den Senken 31 des profilierten Bereichs 3 angeordnet. Dadurch werden die in den Senken 31 des profilierten Bereichs 3 befindlichen Feinanteile des Polysiliciums gezielt zu den Schlitzen 41 des Bereichs 4 geführt.The sieve plate 1 comprises - adjoining the profiled area 3 - an area 4 with
Die Spitzen 32 des profilierten Bereichs 3 setzen sich auch im Bereich 4 fort, so dass die gesamte Siebplatte 1 profiliert ist, jedoch im Bereich 4 statt Senken 31 Schlitze 41 aufweist.The
Die Abtrennung des Feinanteils erfolgt somit über die Schlitze 41 der Siebplatte 1. Die abgetrennten Feinanteile können beispielsweise durch einen unterhalb der Schlitze 41 der Siebplatte 1 angeordneten Auffangbehälter aufgenommen werden.The fine fraction is thus separated off via the
Größere Bruchstücke werden im profilierten Bereich über die Spitzen 32 zum Entnahmebereich 5 geführt.Larger fragments are guided in the profiled area via the
Die Schlitze 41 weiten sich in Förderrichtung. Es hat sich gezeigt, dass dadurch ein Verstopfen der Öffnungen effektiv vermieden werden kann.The
Claims (6)
- A method for mechanically sizing polysilicon, consisting of Fragments of the size classes
break size 0 0,1 to 5 mm, or break size 1 3 to 15 mm, or break size 2 10 to 40 mm, or break size 3 20 to 60 mm, or break size 4 45 to 120 mm, or break size 5 100 to 250 mm, whereby the size class of - A method according to claim 1, wherein the screen plate (1) is made of one or more materials selected from the group consisting of plastic, ceramic, glass, diamond, amorphous carbon, silicon and metal.
- A method according to any one of claims 1 to 2, wherein the screen plate (1) comprises a metallic base body and a coating or lining with one or more materials selected from the group consisting of plastic, ceramic, glass, diamond, amorphous carbon and silicon.
- A method according to any one of claims 1 to 3, wherein the screen plate (1) comprises a coating of titanium nitride, titanium carbide, aluminum titanium nitride or DLC (Diamond Like Carbon).
- A method according to any one of claims 1 to 4, wherein the screen plate (1) is made of hard metal or is lined or coated with a hard metal.
- A method according to any one of claims 1 to 5, wherein the size of the slots (41) is up to 200 mm.
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PCT/EP2016/055538 WO2016202473A1 (en) | 2015-06-19 | 2016-03-15 | Screen plate for screen installations for mechanically classifying polysilicon and use of said screen plate |
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CN113897682B (en) * | 2021-10-29 | 2024-02-20 | 大连弘源矿业有限公司 | Polysilicon washing and selecting processing equipment |
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SG11201710116QA (en) | 2018-01-30 |
EP3310499A1 (en) | 2018-04-25 |
CN107771105B (en) | 2021-12-31 |
TW201700186A (en) | 2017-01-01 |
JP2018524163A (en) | 2018-08-30 |
CN107771105A (en) | 2018-03-06 |
JP6851994B2 (en) | 2021-03-31 |
DE102015211351A1 (en) | 2016-12-22 |
TWI600473B (en) | 2017-10-01 |
SG10201911360RA (en) | 2020-02-27 |
US11059072B2 (en) | 2021-07-13 |
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