Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
  • F21Y2115/00—Light-generating elements of semiconductor light sources
  • F21Y2115/10—Light-emitting diodes [LED]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
  • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/484—Connecting portions
  • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
  • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/484—Connecting portions
  • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
  • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/181—Encapsulation

Definitions

• the present invention relates to an LED module (light-emitting diode module) for emitting mixed light, preferably white light. Furthermore, the present invention relates to a lighting device with at least one such LED module.
• LED modules which are suitable for emitting mixed light, in particular white light, are known from the prior art.
• the mixed light is produced by mixing a spectrum of one or more LEDs with the emission spectrum of at least one phosphor excited by the LED (s), the emission spectrum of at least one phosphor differing from the spectrum of at least one LED.
• these LED modules have at least one light-emitting light field, which is usually formed by coating a plurality of LEDs with a potting compound or other covering containing at least one phosphor.
• LED modules with light fields which comprise differently designed areal areas for emitting different light spectra. These areal areas are separated in each case by dams or partitions of the other areal areas. In each separated by the dams areas LED chips or LED strands are arranged. In the production of these flat areas are covered with a potting compound containing phosphor particles. After filling the areal areas with the potting compound, these luminescent particles sink in the potting compound and deposit on and around the LED chips.
• the casting compound or the casting compounds may comprise different phosphor particles or different phosphor particle mixtures, so that the two-dimensional regions can emit corresponding light spectra, in order for example to be able to provide a desired mixed light through the LED module.
• Such a manufacturing method is also referred to as a so-called “_dam-and-ZZ” method. "It has now been found that, in particular with such LED modules produced by a" dam-and-ZZ "method, a certain extent over the beam angle Inhomogeneous light emission can occur, especially if a
• Matrix material for example, epoxy or silicone-based
• silicone-based can move.
• Phosphor particle density can be provided.
• An LED module according to the invention can be produced by a method which has at least the following steps:
• the potting compound contains at least one type of phosphor particles, and preferably a matrix material
• a predetermined potential is applied directly or indirectly to at least one LED chip during the dispensing operation.
• the LED module can be produced by a method, wherein the carrier material is formed by a module plate having preferably at least one dam that delimits at least one light field, wherein at least one LED chip is arranged within the light field.
• a solution according to the invention for applying a predetermined potential to at least one LED chip may be that the electrical connections of the at least one LED chip are short-circuited while the phosphor particles in the liquid potting compound are sinking.
• the electrical connections of the at least one LED chip can be grounded, ie connected to a ground terminal, for example to a ground terminal.
• the potential of the LED chips can be brought to zero, and thus it can be avoided that there is a potential difference to the surroundings of the LED chip or parts of the dispensing device.
• the application of a predetermined potential to at least one LED chip can also take place, for example, by applying an alternating voltage to the electrical connections of the at least one LED chip, while the phosphor particles sink in the liquid potting compound.
• the voltage and the frequency of the alternating voltage can be selected such that the phosphor particles sink substantially linearly in the liquid potting compound.
• Phosphor particles within the potting compound is that an AC voltage is applied to the LED chip or to the LED chips as a predetermined potential, and thus changing electrical potentials are constructed so that a deflection of the positively charged phosphor particles avoided or im
• alternating voltage can be adapted in a simple manner such that the phosphor particles can sink substantially linearly, ie as distraction-free and rectilinearly as possible in the still-liquid potting compound, and thus can be arranged homogeneously on and around the LED chip or the LED chips.
• the application of a predetermined potential to at least one LED chip for example, by dropping a DC voltage to the electrical terminals of the at least one LED chip while the phosphor particles in the liquid potting compound drop to deflect the phosphor particles at least partially in the direction of the LED chips.
• an electric field can be purposefully provided by the LED chip, so that the sinking movement of the charged phosphor particles can be purposefully influenced, for example in order to be able to guide the phosphor particles to the lateral areas of the LED chips.
• An LED module according to the invention can be produced by a method which has at least the following steps:
• the potting compound contains at least one matrix material and at least one type of phosphor particles
• the above-mentioned inhomogeneous light output is based on an inhomogeneous distribution of the phosphor particles within the potting compound, whereby this inhomogeneity is greatest, especially in the area of the LED chips. It was also found that this inhomogeneity is more pronounced in LED chips with a comparatively high density of phosphor particles.
• This electric field between the electrodes of the LED chip leads to the deflection of the electrically positively charged phosphor particles during the sinking process and thus leads to an inhomogeneous distribution of the phosphor particles.
• the present invention now provides several solutions, preferably by indirect or direct Applying a predetermined potential, this deflection of the phosphor particles during the Absinkreaes within the potting compound can be reduced or avoided.
• a solution can be provided by the fact that the LED chips are darkened at least during the Absinkvorgangs so that no or only a significantly reduced photoelectric effect occurs, so that no or a significantly reduced deflection of the positively charged phosphor particles occurs.
• Such a darkening is thus a form of indirect application of a predetermined potential to the LED chips.
• Such a darkening can for example take place in that only the LED chips are covered during the sinking process or that substantially the entire LED module is covered. This can be done for example by a dark or black foil, which after the
• Dispensen the potting compound on the LED chips or on the LED module is arranged.
• Such darkening can also be provided by arranging the LED module in a dark environment (for example in a dark room or in a darkened drying duct) at least during the sinking of the phosphor particles.
• the LED chips are illuminated only with light that is outside of the (main) absorption spectrum of the LED chips, Such quasi-selective illumination may be provided by corresponding lights in the corresponding ones
• Production areas are provided. Furthermore, it is also possible to use a cover film, which provides a corresponding filter function.
• LED modules made by the different solutions proposed here have one compared to the known LED modules more homogeneous phosphor particle distribution, resulting in a more homogeneous light output.
• the LED module can be produced by a method which has at least the following steps:
• the present invention is not limited to LED modules that include dams, but generally relates to LED modules in which a potting compound is applied (dispersed) in which phosphor particles can still move within the matrix material (for example, epoxy or silicone-based) ,
• Another LED module according to the invention is produced by a method comprising at least the following steps:
• Phosphor particles within the potting compound it consists of the LED module at least during the sinking of the phosphor particles within a
• Another LED module according to the invention is produced by a method comprising at least the following steps:
• Phosphor particles in the potting compound is arranged obliquely to the horizontal, that the phosphor particles are substantially linear in the liquid
• Phosphor particles within the potting compound it is the LED module at least during the descent of the phosphor particles to arrange obliquely to horizontal, so that the occurring deflection of the phosphor particles can be compensated by gravity as possible and the phosphor particles in turn can fall as straight as possible in the still liquid potting compound.
• Another LED module according to the invention is produced by a method comprising at least the following steps:
• Phosphor particles in the potting compound is accelerated such that the most homogeneous possible distribution of the phosphor particles is provided at least to the region of the at least one LED chip.
• Such an acceleration can be achieved, for example, by oscillating the LED module during the sinking of the phosphor particles in the potting compound, such that the LED module, during the sinking, of the
• Phosphor particles in the potting compound is continuously moved on a 3-dimensional path, or by the fact that the LED module during the sinking of the phosphor particles in the potting compound is moved at least once jerky.
• Another LED module according to the invention is produced by a method comprising at least the following steps:
• Potting a directional flow is generated in order to provide the most homogeneous possible distribution of the phosphor particles at least around the area of the at least one LED chip.
• Such a directed flow can be generated, for example, by a stirring device arranged in the liquid potting compound, for example a micro-stirrer.
• Another LED module according to the invention is produced by a method comprising at least the following steps:
• the LED module by directly applying a predetermined
• Potentials is operated at intervals so that the potting compound hardens in layers due to the light output.
• Fluorescent particle distribution can be achieved.
• the intermittent application of a Vorsorgungsweakened to the operation of the LED module and the LED chips contained and thus by interval operation of the LED module and the resulting layered curing of the
• Another LED module according to the invention is produced by a method comprising at least the following steps:
• the phosphor particles can be embedded in a liquid matrix prior to sifting, so that they are screened on virtually wet, or also screened onto the at least one light field as (preferably dry) phosphor powder.
• Another LED module according to the invention is produced by a method comprising at least the following steps:
• Fluorescent particles on and around the LED chip or the LED chips can be avoided, so that here a more homogeneous distribution of the phosphor particles can be provided.
• Another LED module according to the invention comprises at least:
• a module plate preferably having at least one dam that delimits at least one light field, wherein within the light field at least two linearly arranged LED strands each having a plurality of LED chips connected in series is provided;
• Light field are arranged.
• the electric potential correspondingly increases due to the photoelectric effect. This effect can at least be reduced if the LED strings are arranged with alternating polarities in such a way that their electric fields at least partially cancel each other out.
• a predetermined potential for example a
• Another LED module according to the invention comprises at least:
• a module plate preferably having at least one dam that delimits at least one light field, wherein a plurality of LED chips is provided within the light field;
• the LED chips are arranged in alternating polarity with each other in the at least one light field.
• the deflection of the phosphor particles due to the electric fields of the LED chips can be at least reduced if the LED chips are arranged in the light field with alternating polarities to each other that at least partially cancel their electric fields.
• a plurality of LED chips arranged in a row or a column can each be arranged with alternating polarity, so that their electrical fields cancel each other at least partially.
• Phosphor particles of inorganic phosphor particles for example, ZnS, ZnSe, CdS, CdSe, ZnTe, CdTe, (Ca 3 Sc 2 Si 3 0 12: Ce3 +), Ortho-silicates (BOSE), garnets (YAG: Ce3 +, (YGd) AG: Ce3 + , LuAG: Ce3 + ), oxides (CaSc0 2 : Eu 2+ ), SiALONs (a-SiALON: Eu 2+ , b-SiALON: Eu 2+ ), nitrides (LagSieNn: Ce3 + , CaAlSiN 3 : Ce3 + ) , oxy-nitride (SrSi 2 N 2 0 2: Eu 2+, (Ca, Sr, Ba) Si 2 N 2 0 2: Eu 2+).
• any substances / particles which are excitable by light that can be emitted by the LED chips used and then emit a
• the potting compound used in an LED module according to the invention is a potting compound based on silicone and / or epoxy, which is completely transparent in the spectral regions important for the function, preferably already in the liquid and preferably at least in the crosslinked state.
• the potting compound may further comprise scattering particles for more homogeneous mixing of light.
• the present invention preferably used dam or have the dams used (if the LED module several
• Such a dam or a dam structure can either be formed directly on the module plate, for example by the application and curing of a suitable material (for example by a Dispensing method) or initially produced as a separate component, which is then connected to the module plate.
• the invention also relates to a method for producing an LED module which has at least the following steps:
• the potting compound contains at least one type of phosphor particles, and preferably a matrix material
• a predetermined potential is applied directly or indirectly to at least one LED chip during the dispensing operation.
• the present invention relates to a lighting device comprising at least one of the LED modules described above.
• Figure 1 is a schematic view of a first embodiment of an LED module according to the invention during the manufacturing process
• Figure 2 is a schematic view of a second embodiment of an LED module according to the invention during the manufacturing process
• Figure 3 is a schematic view of a third embodiment of an LED module according to the invention during the manufacturing process.
• Figure 4 is a schematic view of a fourth embodiment of an LED module according to the invention during the manufacturing process.
• a module plate 2 with (at least) a dam 3, which preferably delimits a substantially circular light field is provided.
• a dam 3 which preferably delimits a substantially circular light field.
• a plurality of LED chips 4 is arranged within the light field.
• the LED chips 4 are particularly preferably arranged in rows and columns in the light field, so that a substantially homogeneous distribution of LED chips 4 on the light field can be achieved.
• the circular dam 3 shown it is also possible to provide a plurality of interconnected or separately arranged dams on the module plate 2.
• the dam 3 has a seen in plan view width between 50 ⁇ and 2 mm.
• the dam 3 can either be formed directly on the module plate 2 or initially produced as a separate component, which is then connected to the module plate 2.
• a flowable potting compound 5 is introduced into the light field (or into the light fields), the potting compound 5 being mixed with phosphor particles (distributed as homogeneously as possible therein).
• phosphor particles distributed as homogeneously as possible therein.
• Fluorescent particle mixtures are used.
• Potting compound 5 preferably a potting compound based on silicone and / or epoxy, is preferably applied by means of a dispensing method. After the filling of the light field with the flowable potting compound 5, the phosphor particles mixed into them start due to the force of gravity within the potting compound
• the phosphor particles are charged during the process
• a solution shown in FIG. 1 can be provided in that at least the LED chips 4 are darkened during the sinking process so that no or only a significantly reduced photoelectric effect occurs, so that no or a significantly reduced deflection of the positively charged phosphor particles occurs.
• a darkening is thus a form of indirect application of a predetermined potential to the LED chips 4.
• Such a darkening can be effected, for example, by a film 6 (preferably a dark or black) arranged on the LED module 1.
• the film 6 is thereby arranged after filling with the potting compound 5 on the LED module 1, that at least the LED chips 4 are covered and thus darkened.
• the film 6 may be formed such that no more light can get to the LED chips 4 or only light that is outside the (main) absorption spectrum of the LED chips 4, so that no more photoelectric effect occurs or this can be significantly reduced.
• the LED module 1 at least while the phosphor particles in the potting compound 5 are sinking, to be arranged within a darkened environment, for example within a darkened channel 10.
• a darkened channel 10 can also be arranged within a darkened environment.
• Sealing compound 5 sink inclined to the horizontal, so that the occurring deflection of the phosphor particles can be compensated by gravity as possible and the phosphor particles turn as straight as possible in the still Grout 5 can fall.
• the angle of inclination of the LED module during the sinking of the phosphor particles is adjusted accordingly to allow a substantially linear decrease of the phosphor particles.
• the LED module 1 of Fig. 4 includes one or - as shown - a plurality of LED chips 4, which can be operated to emit light.
• the LED chips 4 may be configured to emit blue light during operation. But it is also possible to install different types of LED chips 4 in the LED module 1, which emit light of different colors or wavelengths.
• the LED chips 4 are mounted on a support 2, for example a printed circuit board such as a PCB.
• a surface of the carrier 2, on which the LED chips 4 are applied, is reflective.
• the LED chips 4 are contacted in the LED module 1 in series with bonding wires 7.
• Each LED chip 4 is preferably connected with at least two bonding wires 7.
• the LED chips 4 for the operation of the LED module 1 can be supplied with voltage and controlled. During the manufacturing process 100 of the LED module 1, it is possible to charge the LED chips via the bonding wires 7 with the second polarity.
• the LED chips 4 are arranged in particular within a dam 3.
• the dam 3 can enclose the LED chips 4 as indicated in FIG. 3 at least partially, for example annularly.
• at least two bonding wires 7 are led to the outside of the dam 3 to at least two bonding pads 8.
• the bond pads 8 can also be connected directly or indirectly to an operating voltage source.
• the LED chips 4 are embedded in a matrix material, for example a silicone matrix.
• the LED module 1 is therefore preferably produced by means of the dam and fill technique
• the matrix material is preferably fully transparent to the light from the LED chips 4 and protects the LED chips 4 and their coatings
• color conversion particles 3 are provided in the matrix material
• Color conversion particles 3 are in particular on the carrier second
• inventive method 100 achievable.
• the color conversion particles 3 can be, for example, phosphors which at least partially convert the light of the LED chips 4 in their wavelength. If the LED chips 4 emit, for example, in the blue spectral range, then
• Color conversion material for the color conversion particles 3 total of the LED module 1 white light are generated.
• Color mixtures of the light emitted by the LED module 1 can be generated.
• the uniformity of the light output by the LED module 1 during operation is significantly improved over the emission angle. It is also pointed out that color conversion particles 3 can also be deposited on the bonding wires 5 which connect the LED chips 4 of the LED module 1 to one another. The bonding wires 7 are sometimes even from
• Matrix material dosed between the dam 3 and the LED chips 4.
• a viscosity of the matrix material is preferably chosen such that the color conversion particles 3 can be distributed in the matrix material and migrate therein. Conventionally, a branching process of the
• Color conversion particles 3 begin at which the color conversion particles 3 would be deposited purely gravity driven on the surfaces of the LED chips 4 and the support 2 before the matrix material is cured. According to the invention, however, this branching process is assisted or at least influenced by the application of a predetermined potential to the LED chips 4.
• the application of a predetermined potential to the LED chips can be done by applying a corresponding voltage such as a DC or AC voltage to the LED chips 1. This means that at least one defined electric field arises between the LED chips 4 and the
• a predetermined potential can also be applied to the carrier 2. This can be done by applying a voltage to the carrier 2. As a result, for example, falling color conversion particles 3 can be prevented from depositing on the upper side of the carrier 2.
• the carrier 2 can be applied to the carrier 2.
• Coating the side surfaces of the LED chips 4 is further supported and is achieved in particular that the layer on the top and on the side surfaces of the LED chips 4 of uniform thickness.
• the color conversion particles 3 are displaced from the top of the carrier 2 between the LED chips 4 and between the outermost LED chips 4 and the dam 3 wholly or far. These color conversion particles 3 are then forced toward the side surfaces of the LED chips 4 and are deposited there due to the applied
• the predetermined potential can be applied by voltage U + generated by a voltage source 9.
• a voltage U + generated by preferably the same voltage source 9 is applied to the LED chips 4 via the bond pads 8 and the bonding wires 7. Due to the voltage U + can build on the top of the LED chips 4, an electric field that the charged
• Color conversion particles 3 to the LED chips 4 forces out. Thereby, the setting process of the color conversion particles 3 can be accelerated, and the color conversion particles 3 are deposited on the upper surfaces and the side surfaces of the LED chips 4.
• the voltage U + across the LED chips 4 may preferably be between 20-100 V, more preferably between 40-80 V, even more preferably at 60 V.
• the predetermined potential by shorting the
• Bonding pads 8 and thus the LED chips 4 are applied.
• short-circuiting the LED chips 4 it is achieved via the bond pads 8 and the bonding wires 7 that the same potential is applied to all LED chips 4 and also to all parts and electrodes of the LED chips 4. Due to the short-circuiting of the LED chips 4, it can be achieved that a uniform electric field can build up on the upper side of the LED chips 4, and that the charged color conversion particles 3 drop uniformly towards the LED chips 4. Thereby, the setting process of the color conversion particles 3 can be influenced and the bearings are stored
• Ground terminal for example, to be connected to a ground terminal.
• the predetermined potential is also formed by a changing applied voltage, whereby over time different applied voltages U + are applied. This means that the electric fields at the LED chips 4 can each be adjusted in a targeted manner, preferably even variable over time. Thereby, a quantity and / or a deposition form of the
• Color conversion particles on the tops or side surfaces of the LED chips 4 are fine-adjusted, in particular also slightly inhomogeneous over the course of the top and / or the side surfaces of the LED chips 1.
• Color homogeneity of the finished manufactured LED module 1 can be further improved.
• the carrier 2 could also be directly charged with a voltage in order to charge it.
• the invention also relates to a method for producing an LED module 1, which has at least the following steps:
• the potting compound 3 contains at least one type of phosphor particles, and preferably a matrix material,
• the present invention is not limited to LED modules manufactured by a "on-and-Fi ' ZZ" method, but generally relates to all LED modules to which a potting compound in which phosphor particles are applied
• the present invention is not limited to the preceding embodiments, as long as it is encompassed by the subject of the following claims: Furthermore, the preceding embodiments can be combined with each other in any desired manner. In particular, the present invention is not limited to the fact that all LED chips arranged in the light field must necessarily be provided with phosphor.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Led Device Packages (AREA)

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• 2015
  • 2015-06-15 DE DE202015103126.2U patent/DE202015103126U1/de not_active Expired - Lifetime
• 2016
  • 2016-05-20 WO PCT/AT2016/050152 patent/WO2016201463A1/de active Application Filing
  • 2016-05-20 CN CN201680033188.7A patent/CN107690715B/zh active Active
  • 2016-05-20 US US15/580,218 patent/US20180158992A1/en not_active Abandoned
  • 2016-05-20 EP EP16729750.6A patent/EP3308406A1/de active Pending

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