EP3278358A1 - Bac de plaquettes et dispositif de traitement par plasma de plaquettes - Google Patents

Bac de plaquettes et dispositif de traitement par plasma de plaquettes

Info

Publication number
EP3278358A1
EP3278358A1 EP16713909.6A EP16713909A EP3278358A1 EP 3278358 A1 EP3278358 A1 EP 3278358A1 EP 16713909 A EP16713909 A EP 16713909A EP 3278358 A1 EP3278358 A1 EP 3278358A1
Authority
EP
European Patent Office
Prior art keywords
wafer
wafer boat
receiving elements
contact
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16713909.6A
Other languages
German (de)
English (en)
Inventor
Michael Klick
Ralf Rothe
Wilfried Lerch
Johannes REHLI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm International AG
Original Assignee
Centrotherm Photovoltaics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics AG filed Critical Centrotherm Photovoltaics AG
Publication of EP3278358A1 publication Critical patent/EP3278358A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G21/00—Supporting or protective framework or housings for endless load-carriers or traction elements of belt or chain conveyors
    • B65G21/20—Means incorporated in, or attached to, framework or housings for guiding load-carriers, traction elements or loads supported on moving surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports

Definitions

  • the present invention relates to a wafer boat and a wafer processing apparatus suitable for generating a plasma between wafers housed therein.
  • the wafers are often both individual treatment processes as well as batch processes, ie. Processes in which multiple wafers are treated simultaneously suspended. Both for individual processes and batch processes, the wafers must each be brought to a desired treatment position. In batch processes, this is usually done by using the wafers in so-called boats, which have recordings for a large number of wafers. In the boats, the wafers are usually arranged parallel to each other. Such boats can be designed differently and often they only provide for receiving the lower edges of the respective wafers so that the wafers are upstanding. Such boats may, for example, have chamfers to facilitate insertion of the respective lower edges of the wafers into the boats. Such boats are usually passive, meaning that in addition to a holding function, they have no further function during the processing of the wafer.
  • the wafer boat is formed by a plurality of electrically conductive plates, which are usually made of graphite.
  • the plates are in
  • Substantially arranged parallel to each other, and between adjacent plates receiving slots are formed for receiving wafers.
  • the mutually facing sides of the plates each have corresponding receiving elements for wafers, so that wafers can be accommodated on each of these sides.
  • pins are usually provided on each side of the plate facing another plate, which receive the wafer.
  • Adjacent plates of the wafer boat are electrically isolated from each other and between directly adjacent plates an AC voltage is usually applied in the kHz range or else in the MHz range during the process.
  • a plasma is to be formed between the plates and in particular between the wafers held on the respective plates, in order to provide a plasma treatment, for example a deposition from the plasma or a plasma nitriding of layers.
  • a plasma treatment for example a deposition from the plasma or a plasma nitriding of layers.
  • the plates to each other spacer elements are used, each having a predetermined length for setting predetermined distances between the plates.
  • An example of such a wafer boat, which is constructed from plates and spacers, is described in DE 10 201 1 109 444 A1.
  • deposition from the plasma it is usually additional.
  • the wafer boat with wafers accommodated therein is usually accommodated in a process tube which can be heated by a heating device.
  • a heating device During heating, not only the wafers but also the wafer boat, which has a considerable thermal mass, are heated up.
  • the temperature on the outer plates can be reached quite quickly, the heating of internal plates and the inner wafers sometimes takes a long time, which prolongs the process cycles.
  • the present invention is therefore based on the object of providing a wafer boat and a plasma treatment apparatus for wafers which enable improved heating of the wafers. According to the invention, this object is achieved by a wafer boat according to claim 1, a wafer boat according to claim 9 and a plasma treatment device according to claim 14.
  • Other embodiments of the invention will become apparent, inter alia, from the respective subclaims.
  • a wafer boat for the plasma treatment of disk-shaped wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications, which has a multiplicity of first receiving elements arranged parallel to each other, each having a plurality of receiving slots for receiving an edge region of a wafer or a wafer pair ,
  • the wafer boat also has a multiplicity of second receiving elements arranged parallel to one another, each of which is electrically conductive and has at least one depression for receiving an edge region of at least one wafer or a pair of wafers.
  • Such a wafer boat is capable of wafers only
  • the thermal mass of the wafer boat may be substantially reduced.
  • the first and / or second receiving elements may substantially have a rod shape, whereby a slight shading of the substantially free-standing wafer is produced.
  • the first receiving elements are made of an electrically insulating material and the first and second receiving elements are arranged spaced apart by a fixing unit. The elements can thus be handled as one unit, wherein no short circuit between adjacent wafers is to be feared via the first receiving elements ,
  • the second receiving elements extend transversely to the first receiving elements and are as supports with formed widening recess, wherein the wafer boat has a first contact unit, which electrically connects each second of the second receiving elements in a first group, and a second contact unit, which connects the other of the second receiving elements in a second group.
  • the first and second contact units lie in different planes, which facilitates their connection to a voltage source.
  • the first and second receiving elements contact the wafer in the picked-up state at not more than 20%, preferably at not more than 10% of its circumference, the wafer otherwise being free.
  • the receiving elements may be arranged and configured so that they contact the wafer in the picked-up state only in the region of one half (for example, the lower half in a vertical arrangement of the wafer).
  • the slots in the first and / or second receiving elements are configured such that each second slot is configured to contact a picked wafer or a pair of wafers received while the other slots are configured to be non-wafers to contact. This makes it possible that the first and / or second receiving elements only contact each second wafer or only every second pair of wafers, whereby short circuits when applying a voltage between adjacent wafer pairs of wafers can be avoided.
  • An alternative wafer boat for the plasma treatment of disk-shaped wafers in particular semiconductor wafers for semiconductor or photovoltaic applications, has a multiplicity of electrically conductive plate-shaped receiving elements arranged parallel to one another and having a height " smaller than half the height of the wafers to be picked up.
  • the receiving elements have at their opposite sides respectively at least three receiving elements for receiving wafers.
  • the wafers can essentially be free (at least with one half) and the thermal mass of such a wafer boat can optionally be reduced compared with the disk boat described at the beginning.
  • the electrically conductive receiving elements of the wafer boat at their longitudinal ends in each case contact lugs, which via contact blocks with contact lugs of other electrically conductive
  • adjacent electrically conductive receiving elements lie in different levels and connect the contact blocks each other electrically conductive receiving element each other. This is a simple one
  • the combined thermal mass of the sum of the contact blocks and the sum of the contact tabs is smaller than the thermal mass of the other Waferbootes.
  • the combined thermal mass of the sum of the contact blocks and the sum of the contact lugs is less than 1/1 0 of the thermal mass of the other Waferbootes to allow rapid heating.
  • the supply impedance via current-carrying contact blocks and two contact lugs is preferably smaller than the impedance of a plasma which burns between a pair of wafers in contact with the contact lugs in order not to generate excessive losses in high-frequency applications in the region of the contact arrangement.
  • the wafer plasma processing apparatus has a process space for housing a wafer boat of the type described above. Further, means for controlling a process gas atmosphere are in the
  • Process room and at least one voltage source, with the electrically conductive receiving elements of the wafer boat in a suitable manner is connectable, provided to apply an electrical voltage between directly adjacent wafers housed in the wafer boat.
  • Fig. 1 is a schematic side view of a wafer boat
  • FIG. 2 is a schematic plan view of the wafer boat according to FIG. 1;
  • FIG. 2 is a schematic plan view of the wafer boat according to FIG. 1;
  • FIG. 3 is a schematic front view of the wafer boat according to FIG. 1;
  • FIG. FIG. 4 shows a schematic view of a plasma treatment apparatus with wafer boat according to FIG. 1 accommodated therein;
  • FIG. 5 is a schematic front view of a process chamber of the plasma treatment apparatus according to FIG. 4;
  • FIG. 5 is a schematic front view of a process chamber of the plasma treatment apparatus according to FIG. 4;
  • FIG. 6 is a schematic plan view of a part of a gas supply of the process chamber according to FIG. 5; FIG.
  • FIG. 7 is a schematic front view of an alternative process chamber of the plasma processing apparatus of FIG. 4; FIG.
  • Fig. 8 is a schematic front view of another alternative
  • Process chamber of the plasma treatment apparatus of FIG. 4; 9 is a schematic front view of a further alternative
  • Process chamber of the plasma treatment apparatus according to FIG. 4; 10 is a schematic side view of an alternative Waferbootes, for
  • FIG. 1 1 a to c schematic side views of parts of the alternative
  • FIG. 12 is a schematic plan view of a portion of the wafer boat of FIG. 9; FIG.
  • Fig. 13 is a schematic side view of another alternative
  • Wafer boats for use in a plasma treatment device
  • Fig. 14 is a schematic side view of a part of the alternative
  • FIG. 15 is a schematic plan view of another alternative wafer boat;
  • FIG. 16 is a schematic side view of a portion of the wafer boat of FIG. 15;
  • FIG. 16 is a schematic side view of a portion of the wafer boat of FIG. 15;
  • FIG. 17 (a) and (b) are schematic cross-sectional views taken through a process chamber of a plasma processing apparatus of FIG. 4 with a wafer boat of FIG. 15 therein;
  • Fig. 18 is a schematic plan view of another wafer boat
  • FIG. 19 is a schematic side view of a portion of the wafer boat of FIG. 19; FIG. and
  • FIGS. 20 (a) and (b) show schematic cross-sectional views through a process chamber of a plasma processing apparatus according to FIG. 4 with a wafer boat according to FIG. 18 therein.
  • FIG. 1 shows a schematic side view of a wafer boat 1
  • FIGS. 2 and 3 show a plan view and a front view, respectively.
  • the same reference numbers are used in the figures as far as the same or similar elements are described.
  • the wafer boat 1 is formed by a plurality of plates 6, contacting units and clamping units.
  • the illustrated wafer boat 1 is specifically for a layer deposition of a plasma, for example of S 13N4, SiN x , a-Si, Al 2 O 3 , ⁇ , doped and undoped poly-silicon or amorphous silicon etc, and in particular a plasma nitridation of
  • the plates 6 each consist of an electrically conductive material, and are in particular formed as graphite plates, wherein depending on the process, a coating or surface treatment of the plate base material may be provided.
  • the plates 6 each have six recesses 10, which are covered in the process of the wafers, - as will be explained in more detail below. Although six Aussparrungen per plate 6 are provided in the illustrated form, it should be noted that a greater or lesser number may be provided.
  • the plates 6 each have parallel upper and lower edges, wherein in the upper edge, for example, a plurality of notches may be formed to allow a position detection of the plates, as described in DE 10 2010 025 483.
  • a total of twenty-three plates 6 are provided, which are arranged over the corresponding contacting units and clamping units substantially parallel to each other
  • the plates 6 each have at least on their side facing an adjacent plate 6 groups of three receiving elements 12, which are arranged so that they can receive a wafer in between.
  • the groups of the receiving elements 12 are each arranged around each recesses 10 around, as schematically indicated in Fig. 1.
  • the wafers can be received in such a way that the receiving elements each contact different side edges of the wafer.
  • the plates 6 each have a projecting contact lug 13, which serves for electrical contacting of the plates 6, as will be explained in more detail below.
  • two embodiments of plates 6 are provided which differ with regard to the position of the contact lugs 13.
  • the contact lugs 13 are each made directly adjacent to the lower edge, while in the other embodiment they are spaced from the lower edge, the distance to the lower edge being greater than the height of the contact lugs 13 of the plates of the other embodiment.
  • the two embodiments of plates 6 are alternately arranged in the wafer boat 1. As best seen in the view of FIG.
  • the contact lugs 13 are directly adjacent plates 6 in the arrangement of the wafer boat 1 on different levels.
  • the contact lugs 1 3 but in the same plane.
  • two spaced contact planes are formed by the contact lugs 13. This arrangement allows directly adjacent plates 6 can be applied to different potential, while each second plate can be applied to the same potential.
  • the lying in a respective contact plane contact tabs 13 are electrically connected via contact blocks 15 of a highly electrically conductive material, in particular graphite, and arranged with a predetermined distance from each other.
  • contact blocks 15 of a highly electrically conductive material, in particular graphite, and arranged with a predetermined distance from each other.
  • a tensioning element 16 having a shaft portion (not visible) and a head portion, such as a screw.
  • the plates 6 can then be fixed to one another.
  • the plates are fixed in two different groups to each other and in such a way that the plates of the different groups are arranged alternately.
  • the clamping element 16 consist of electrically conductive material what but not necessary.
  • the contact blocks 15 each preferably have the same length (in the direction that defines the distance between contact tabs 13 of the plates 6) corresponding to the width of two receiving slots 1 1 plus the width of a plate 6.
  • the contact blocks 15 are preferably formed so that They should have a low thermal mass and in particular the sum of the contact blocks should have a lower thermal mass than the sum of the plates 6.
  • Preferably even the combined thermal mass of the sum of the contact blocks and the sum of contact lugs 13 of the plates should be smaller than the thermal mass of Sum of the plates 6 less the thermal mass of the respective contact noses 13th
  • the shank parts of the clamping element 19 are each dimensioned so that they can extend through corresponding openings of all plates 6 and respective spacer elements 22 located therebetween.
  • all the plates 6 can then be fixed substantially parallel to one another.
  • there are also other clamping units with spacers 22 conceivable here, which the plates 6 with interposed spacer elements 22 to arrange substantially parallel and jammed.
  • at 22 receiving slots and a total of 14 spacing elements 22 per slot (seven adjacent to the top edge and seven adjacent to the bottom edge) 308 spacer elements are provided.
  • the clamping elements 19 are preferably made of an electrically insulating material, while the spacer elements 22 preferably consist of an electrically conductive material.
  • the spacers 22 are preferably made of a high resistance material, such that the spacers serve as a resistive element when a DC or low frequency voltage of sufficient amplitude is applied, but no significant attenuation of the wave propagation when a high frequency voltage is applied (to create a plasma between the plates)
  • the low-frequency voltage in particular a frequency range of 50 Hz to 1 0 kHz and for the high-frequency voltage a range over 40 kHz is considered, but other frequency ranges would be possible.
  • each spacer element should have a resistance greater than 3 kQ, in particular greater than 20 kü or even greater than 40 kü.
  • the spacers can be made of doped silicon, polysilicon or another suitable material that on the one hand is not affected by the process and on the other hand does not affect the process, in particular does not introduce impurities into the process.
  • the plates 6 of a group (overhead contact lug 3 / bottom contact lug 13) electrically connected and fixed to each other via the spacer elements 22, all plates are electrically connected and fixed to each other.
  • FIGS. 4 to 6 FIG. 4 being a schematic side view of the treatment
  • FIG. 5 shows a schematic front view of a process chamber structure
  • FIG. 6 shows a plan view of a gas supply line.
  • the treatment device 30 consists of a process chamber part 32 and a control part 34.
  • the process chamber part 32 consists of a tube element 36 which is sealed on one side and forms a process chamber 38 in the interior.
  • the open end of the tubular element 36 serves to load the
  • Process chamber 38 and it can be closed and hermetically sealed via a locking mechanism, not shown, as is known in the art.
  • the tube element is made of a suitable material that does not introduce impurities into the process, is electrically insulated and can withstand the process conditions of temperature and pressure (vacuum), such as quartz.
  • the tube member 36 has at its closed end gas-tight passages for the supply and discharge of gases and electricity, which may be formed in a known manner. However, corresponding inlets and outlets could also be provided at the other end or else laterally at a suitable location between the ends.
  • the tube member 36 is surrounded by a sheath 40, which is the
  • Tube member 38 thermally insulated from the environment.
  • a heating device such as a resistance heater, which is suitable to heat the tube member 36.
  • a heating device can also be provided, for example, in the interior of the tubular element 36, or the tubular element 36 itself could be designed as a heating device.
  • an external heating device is preferred and in particular one which has different, individually controllable
  • receiving elements In the interior of the tubular element 36 receiving elements, not shown, are provided which have a receiving plane for receiving a wafer boat 1 (which is only partially shown in FIG of the above type. However, the wafer boat can also be inserted into the tubular element 36 so that it rests on the wall of the tubular element 36. In this case, the wafer boat is held substantially above the receiving plane and is arranged approximately centrally in the tubular element, as can be seen for example in the front view of FIG. By appropriate receiving elements and or a direct placement on the.
  • Pipe element is thus defined in combination with the dimensions of the wafer boat, a receiving space in which a properly inserted wafer boat is.
  • the wafer boat can be traded as a whole in the loaded state into and out of the process chamber 38 via a suitable handling mechanism, not shown.
  • a suitable handling mechanism not shown.
  • an electrical contact with in each case at least one contact block 15 of each of the groups of plates 6 is automatically produced, as will be explained in more detail below.
  • a lower gas guide tube 44 and an upper gas guide tube 46 are further provided which are made of a suitable material such as quartz.
  • the gas guide tubes 44, 46 extend in the longitudinal direction of the tubular element 36, at least over the length of the wafer boat 1.
  • the gas guide tubes 44, 46 each have a round cross section and are each arranged in the transverse direction approximately centrally below or above the wafer boat 1.
  • the gas guide tubes 44, 46 are at their closer to the closed end of the tube member 36 lying end with a gas supply unit or a Gasab fertil- unit in combination, as will be explained in more detail below.
  • the respective opposite end of the gas guide tubes 44, 46 is closed.
  • a short gas guide is conceivable in which, for example, gas is introduced only at one end of the tubular element and is distributed by diffusion and / or pumped via a vacuum connection (preferably at the opposite end of the tubular element 36).
  • the lower gas guide tube 44 has a plurality of openings 48 through which gas can escape from the gas guide tube.
  • the openings are located all in an upper half of the gas guide tube, so that a gas emerging therefrom has an upward component.
  • the openings should be formed in an area in the longitudinal direction of the gas guide tube 44, which has at least a length corresponding to the length of the wafer boat.
  • the region has a greater length than the wafer boat and is arranged so that the region extends beyond the ends of the wafer boat.
  • the sum of the area of the openings 48 is smaller than the cross-sectional area of the gas guide tube 44.
  • Gas guide tube 44 between 30 and 70% and in particular between 40 and 60%.
  • a constant pressure then arises in the gas feed pipe 44 and a uniform gas distribution over the apertured region can be achieved.
  • a spacing of the rows of openings 48 of approximately 5 mm is considered with an opening diameter of approximately 1.5 mm.
  • the distance between the centers of the respective openings of the different rows is measured. The distance can also be chosen differently and especially at lower
  • the distance could be larger.
  • the distance should be less than 5 cm, preferably less than 2 cm and in particular less than 1 cm.
  • the upper gas guide tube 46 has a similar construction with openings, in which case the openings are formed in the lower half.
  • the gas guide tubes 44, 46 may be identical, but arranged in a respective different orientation, so that the openings point respectively to the wafer boat 1.
  • a good homogeneous gas distribution can be achieved within the process chamber, in particular in the receiving slots 1 1 of the wafer boat.
  • the lower gas guide tube is acted upon with gas, while gas is drawn off via the upper gas guide tube 46 gas.
  • the lower gas guide tube 44 ensures a good distribution of gas below the wafer boat, and the suction on the upper gas guide tube 46 ensures that the gas between the plates 6 of the wafer boat 1 is transported upwards.
  • two optional, movable deflecting elements 50 are provided in the process space.
  • the deflection elements 50 which are not shown in FIG. 4 for ease of illustration, have an elongated configuration.
  • the deflecting elements 50 extend in the longitudinal direction of the process tube 36 and preferably have a length which corresponds at least to the length of the wafer boat.
  • the deflecting elements 50 should preferably have a length which corresponds at least to the length of the region of the lower gas guiding tube 44 in which the openings 48 are formed.
  • the deflection elements 50 are arranged below and in the transverse direction laterally to the wafer boat 1 in the process chamber 38.
  • the deflecting elements 50 are each rotatably mounted and can by means of an adjustment mechanism, not shown, between a first position, which is shown in Figures 5 and 7 to 9 with a solid line, and a second position shown in Figures 5 and 7 to 9 is shown with a dashed line. In the first position, the deflecting elements substantially prevent one Gas flow around the wafer boat laterally while allowing one in the second position.
  • the adjustment mechanism may, for example, be adjusted to the pressure in the
  • Process chamber " 38 responsive mechanism that brings the deflecting elements 50, for example, automatically in the first position at a certain negative pressure in the process chamber 38.
  • Process chamber " 38 responsive mechanism that brings the deflecting elements 50, for example, automatically in the first position at a certain negative pressure in the process chamber 38.
  • FIGS. 7 to 9 show schematic front views of alternative process chamber structures, which differ only with respect to the shape and / or number of the gas guide tubes.
  • two lower and two upper gas supply tubes 44, 46 are provided.
  • the lower gas guide tubes 44, 44 lie in a horizontal plane below the wafer boat 1 and are arranged symmetrically with respect to a vertical center plane of the process chamber. With regard to the openings, they can be constructed and arranged equal to the gas guide tube described above.
  • the upper gas guide tubes 46, 46 lie in a horizontal plane above the wafer boat 1 and they are also arranged symmetrically with respect to a vertical center plane of the process chamber.
  • different gases can be introduced into the process chamber 38, which thus mix only in the process chamber to avoid premature reaction within the gas supply.
  • the gas guide tubes 44, 46 each have an elliptical cross-sectional shape, wherein the respective major axes are arranged horizontally.
  • the gas guide tubes 44, 46 are located again in the middle below or above the wafer boat 1. In other words, they are arranged symmetrically with respect to a vertical center plane of the process chamber. With regard to the openings, they can be constructed and arranged essentially the same as the gas guide tubes described above.
  • the lower gas guide tubes 44 are below the wafer boat 1, wherein the two exits lie in a plane while the middle is slightly offset downwards. But it would also be another arrangement possible. With regard to the openings, they can be constructed and arranged equal to the gas guide tube described above.
  • the upper gas guide tube 46 lies above the wafer boat 1 and has an elliptical cross-sectional shape, as in FIG. 8, and is arranged symmetrically with respect to a vertical center plane of the process chamber. Alternatively, several gas guide tubes or another form of the gas guide tube could also be provided here.
  • different gases can be introduced into the process chamber 38, which thus mix only in the process chamber to avoid premature reaction within the gas supply.
  • a first gas can be introduced via the outer gas guide tubes 44, while a second gas is introduced via the middle. The arrangement allows a good and homogeneous mixing and distribution of the gases.
  • the control part 34 of the treatment device 30 has a gas control unit 60, vacuum control unit 62, an electrical control unit 64 and a temperature control unit, not shown, which can all be controlled jointly via a higher-level control, such as a processor.
  • the temperature control unit is connected to the not shown Heating unit in conjunction to primarily control the temperature of the tube member 36 and the process chamber 38 and regulate.
  • the gas control unit 60 communicates with a plurality of different gas sources 66, 67, 68, such as gas cylinders containing different gases.
  • the gas sources may include di-chlorosilane, tri-chlorosilane, SiH 4 , phosphine, borane, di-borane, German (GeH 4), Ar, H 2 , TMA NH 3 , N 2, and various other gases at respective gas control unit inputs 60 deploy.
  • the gas control unit 60 has two outputs, one of the outputs being connected to the lower gas guide tube 44 and the other to a pump 70 of the vacuum control unit 62.
  • the gas control unit 60 may suitably connect the gas sources to the
  • the gas control unit 60 Connect outputs and control the flow of gas, as is known in the art.
  • the gas control unit 60 in particular via the lower gas guide tube 44 introduce different gases into the process chamber, as will be explained in more detail below.
  • the vacuum control unit 62 consists essentially of the pump 70 and a pressure control valve 72.
  • the pump 70 is connected via the pressure control valve 72 to the upper gas guide tube 46 and can thereby pump off the process chamber to a predetermined pressure.
  • the connection from the gas control unit 60 to the pump serves to dilute process gas pumped from the process chamber, optionally with N 2 .
  • the electric control unit 64 has at least one voltage source suitable for providing, at an output thereof, at least one of a DC voltage, a low frequency voltage, and a high frequency voltage.
  • the output of the electrical control unit 64 is connected via a line to a contacting unit for the wafer boat in the
  • the line is via an appropriate vacuum and temperature suitable implementation by the sheath 40th and introduced into the tube member 36.
  • the line is in particular constructed so that it is designed as a coaxial line 74 with an inner conductor and an outer conductor.
  • Over the length of the coaxial line 74 there is approximately field freedom on the outside, so that no parasitic plasmas arise even at high frequencies in the MHz range and transmission takes place as lossless as possible.
  • Inside the coaxial line wave propagation takes place with the wavelength ⁇ .
  • the wave propagation continues between plate pairs (planar waveguide), but at a different wavelength, which depends on the presence and type of the plasma.
  • a suitable dielectric is provided which, when subjected to high-frequency voltage, the
  • Propagation speed and the wavelength of the electromagnetic wave in the coaxial conductor relative to a corresponding propagation speed and wavelength of the electromagnetic wave in vacuum reduced.
  • Wavelength of the electromagnetic wave in the coaxial conductor against a corresponding propagation velocity and wavelength of the electromagnetic wave in vacuum is equivalent to increasing the effective electrical length of the coaxial conductor 74 with respect to the vacuum wavelength.
  • the geometric length of the coaxial conductor should be close to an odd multiple of ⁇ / 4 of the wavelength reduced by the dielectric, or in other words, the effective electrical length of the coaxial conductor close to an odd multiple of ⁇ / 4 be set to the wavelength of the applied frequency.
  • inner and outer conductor can be made a certain setting.
  • the inner and outer conductors of coaxial conductors usually have a round cross-section
  • the term coaxial conductor as used in the present application should also include inner and / or outer conductors with other cross-sections.
  • the inner and / or outer conductors may have rectangular or oval cross-sections and extend along a common longitudinal axis.
  • the local propagation speed of the high-frequency wave depends essentially on the dielectric between the inner and outer conductors.
  • the propagation velocity decreases with 1 / (s r ) 1 2 and, accordingly, the effective electrical length of the coaxial conductor 74 increases.
  • a desired average dielectric constant can be set over the length by suitably arranging short insulator pieces of different dielectric constant over the length.
  • the insulator pieces may have a shape corresponding to the inner and outer conductors, such as a ring shape, which allows sliding on the inner conductor.
  • the coaxial line 74 leads substantially to the contact areas of the wafer boat 1.
  • the inner and outer conductors are connected in a suitable manner to the different groups of plates 6.
  • the wave propagation between the plate pairs influences the properties of the depositing plasma, for example in the homogeneity / uniformity over the wafer and the wafer boat.
  • the contact lugs 13 of the wafer boat 1 should be reduced as far as possible in terms of mass and length for the coupling of high-frequency power in order to keep the local heat capacity and the supply inductance as low as possible.
  • the feed inductance formed by the sum of the contact lugs 13 in combination with the contact elements 15 should be substantially smaller than the inductance of the sum of the plates 6.
  • the impedance of the corresponding feed inductance at the operating frequency should be less than half and preferably less than 1 / 10 the impedance of the plate stack of the plates 6.
  • FIGS. 10 to 12 show an alternative wafer boat 100 that can be used in a plasma treatment device 30 of the above type but also in classical plasma treatment devices.
  • the wafer boat 100 is formed by an electrically conductive support unit 101 with a plurality of electrically conductive supports 102, 104, for example made of graphite or another good electrically conductive material, an insulated guide unit 1 06.
  • the support unit 101 and the insulated guide unit 106 are connected via insulated connecting elements 108 and together form the wafer boat 00.
  • FIG. 1 a shows a schematic side view of the support 102
  • FIG. 1 b shows a schematic side view of the support 104
  • FIG. 1 c shows a schematic side view of the supports 102, 104 in an end arrangement.
  • the pads 102, 1 04 each have an elongated body 1 10 having a substantially rectangular cross-sectional shape.
  • the main body 1 10 has in each case a straight central part, in the upper side of a slot 12 for receiving wafers (W) is formed.
  • a slot 12 for receiving wafers (W) is formed.
  • the slot depth is selected to be less than or equal to a customary edge exclusion during wafer production and is therefore approximately 1 to 5 mm.
  • the width of the slot is in turn selected so that two wafers (W) to be processed can be received back-to-back therein, as indicated in the plan view according to FIG. 12.
  • the slot 1 12 may be inclined transversely to the longitudinal direction by 1 ° to 2 °, so that a wafer pair received therein is slightly inclined in the slot 1 12.
  • At their longitudinal ends (adjacent to the slot 1 2 having central portion 1 1 1) have the respective base body 1 10 end portions 1 4, which are offset with respect to the central portion 1 1 in the plane up or down.
  • the end portions 1 14 of the support 102 are offset upwards and the end parts 1 14 of the pad 1 04th down, as shown in Figures 1 a and 1 1 b is clearly visible. If the pads 1 02, 1 04 are in their final arrangement, the end portions 1 14 of the pads 102 are in an upper level and the Endteiie 1 14 of
  • Pads 104 in a lower level, as shown in Fig. 1 1 c can be seen.
  • a plurality of transverse bores 1 6 is provided in each case, which serve for the implementation of clamping elements 1 18, and 120, respectively. These can be of the type described above with head and shoulders
  • clamping elements 1 18 are used in the central region 1 1 1
  • clamping elements 120 are used in the region of the end portions 1 14,
  • a plurality of, for example, 22 of the pads 102, 104 are arranged transversely to their longitudinal extent parallel to one another, with the pads 102 and 104 alternating in the assembly.
  • Middle region 1 1 1 of the pads 1 02, 104 spacers are provided between directly adjacent pads 102, 104, which are aligned with the transverse bores 16 1. These spacers are sleeve-shaped and are dimensioned so that they are inserted in the assembled state of the wafer boat 100 on the shaft portion of the clamping element 1 1 8.
  • the spacers may be electrically insulating or else electrically conductive, such as the spacer elements 22 of the wafer boat 1 described above, if they are to have a similar heating function.
  • each electrically conductive sleeves 124 are provided, which are dimensioned so that they can be plugged onto the shaft portion of the clamping elements 120.
  • the sleeves 124 each have a length equal to the length of two spacers plus the width of an overlay. Thus, they are capable of electrically connecting two pads 102, 102 or 104, 104 in the array respectively. Thus, the pads 102 form a first group of pads, each electrically connected and the pads 104 a second group of pads each are electrically connected. This in turn allows the application of a voltage between the different groups, as well as the wafer boat. 1
  • the guide unit 106 is formed by two elongate holding members 130 and seven guide rods 132 each made of a dielectric material.
  • the holding elements 130 and the guide rods 132 may be made of ceramic or quartz, for example.
  • the holding elements 130 each have an elongate configuration with a length substantially equal to the length of the pads 102, 104 and they extend substantially parallel to the pads 102, 104, wherein the holding members 30 are arranged higher than the pads 102, 104.
  • the guide rods 1 32 extend perpendicularly between the holding elements 1 30, as can be seen in the plan view of FIG. 12 and are suitably connected thereto.
  • the guide rods 132 may have a circular cross-section, but other shapes are possible.
  • the guide rods 132 each have a plurality of notches 134 which are dimensioned to receive and guide an edge region of wafer pairs W, W, in particular an edge scraping region thereof.
  • the guide rods 132 are spaced so that they can each receive a wafer pair W, W therebetween, as indicated in FIG. 12. It should be noted that the top view of FIG. 12 does not fully show the wafer boat 100 and the wafer boat is only partially loaded to simplify the illustration.
  • the notches 134 are in the transverse direction of the
  • Notches 134 correspondingly slightly offset to the slots 12, to allow a recording of the wafer pairs W, W in a slightly inclined position.
  • the support unit 101 consisting of the associated supports 02, 1 04 and the insulated guide unit 106 consisting of the support members 130 and the guide rods 132 are isolated in the end regions respectively Connecting elements 108 connected.
  • the connecting elements 1 08 each have a plate shape and they work with the clamping elements 1 18 and 120 and additional clamping elements for the connection with the holding element 1 30 together to fix the arrangement as a whole and so to form the wafer boat 100.
  • the wafer boat 1 00 can be used in the same way as a classic wafer boat, or also in the form described below, when the spacers are electrically conductive, such as the spacers 22 in the wafer boat 1.
  • the wafer boat 100 does not take the wafers between plates, but leaves them essentially free. As a result, heating of the wafers can be improved. This is further promoted by a reduced thermal mass of the wafer boat 100 compared to the wafer boat 1.
  • the back-to-back arrangement of the wafer pairs can contribute to improved slip freedom of processed wafers. Furthermore, this may optionally the transverse dimensions of the wafer boat at the same
  • FIG. 13 shows a schematic side view of a loaded wafer boat
  • FIG. 14 shows a schematic side view of a single plate of the wafer boat.
  • the wafer boat 200 is essentially formed by electrically conductive plates 202, 204, for example made of graphite or another good electrically conductive material, which are arranged alternately parallel to each other via spacers and clamping elements 206, not shown. This can be done in the manner described above, wherein the spacers made of a dielectric material or a high-impedance may be electrically conductive material, depending on whether they should have a Sakitzfunktion or not, as explained below.
  • the plates 202, 204 each have upwardly open recesses 208.
  • a group of three receiving pins 210 are provided in the region of each recess, which provide a three-point system for wafers W to be accommodated.
  • one of the receiving pins below the recess 208 and the other two receiving pins are on opposite sides of the recess 208 and higher than the lower receiving pin 210.
  • the vertical distance between the lower receiving pin 210 and the upper edge of the respective plates 202, 204th is smaller than half the height of a wafer W to be recorded.
  • recorded wafers are thus not completely accommodated between two plates, but rather project upwardly beyond the plates, as can be seen in FIG.
  • the wafer boat 200 can thus have a significantly reduced thermal mass.
  • the plates 202, 204 each have contact lugs 213 at their ends, wherein the contact lugs 2 3 of the two plates are in turn at different heights, in order to enable a group-wise contacting of the plates via electrically conductive contact elements (not shown).
  • the contact tabs are preferably kept short and are rounded to the outside, but may also have other shapes. In addition, the distance in the height direction between the contact tabs is shortened, which is advantageous when applying an RF voltage, especially in the MHz range. In particular, when a coaxial feed line is provided, as in the above-described plasma treatment device 30.
  • FIG. 15 shows a FIG. 16 is a schematic sectional view of a portion thereof, and FIGS. 17 (a) and (b) show a schematic plan view of the wafer boat 300;
  • Wafer boat (and thus parallel to the longitudinal extent of the plasma treatment apparatus) are taken, the wafer boat of the type in which the wafers are taken transversely to the longitudinal extent of the wafer boat 300.
  • the wafer boat 300 has a classic design, as used for example in thermal diffusion systems for semiconductor wafers.
  • the wafer boat 300 has an elongated configuration, i. it has in longitudinal extension (left-right in Figure 15) has a much greater length than in the other dimensions.
  • an end plate 303 is provided, which is preferably formed of quartz. But it can also be constructed of another suitable non-conductive material.
  • the contact and guide elements 307 lie in the transverse direction between the receiving elements 305.
  • the receiving elements 305 extend, as mentioned above, between the end plates 303 and are fixed thereto, in particular by
  • the receiving elements 305 may also consist of quartz and each have an elongated rod shape.
  • the receiving elements 305 essentially have a rectangular cross-section, wherein "substantially” should also include in particular rectangles with rounded corners, but in principle it would also be possible for the receiving elements 305 to be round or have other shapes arranged inclined to each other and each have in their upwardly facing narrow side a plurality of receiving slots 313 formed which extend transversely to the longitudinal extent of the receiving element 305, and preferably preferably substantially at a 90 ° angle to the longitudinal extent.
  • the receiving slots 31 3 are each evenly spaced
  • each other has a predetermined (constant) depth for receiving a peripheral region of a respective wafer to be picked or a pair of wafers, which can be accommodated in the slot, for example in a back-to-back arrangement.
  • the depth will be approximately equal to or less than an edge exclusion area of the wafers.
  • the receiving slots may be inclined in the longitudinal direction by 1 ° to 2 °, so that a recorded therein wafer or a pair of wafers is arranged correspondingly inclined to the vertical.
  • rod-shaped element 320 of an electrically conductive material such as graphite. formed, the ends of which are electrically contacted in a suitable, not shown manner.
  • the rod-shaped elements 320 each have a substantially round cross-section, as best seen in the sectional view of FIG. 17.
  • each rod-shaped element 320 is a plurality of
  • Slits 322 (contact slot) and slots 323 (insulating slot) are provided, which alternate in the longitudinal direction, as best seen in Fig. 16.
  • the slots 322 each have a first depth and a first width
  • the slots 323 have a second depth and a second width, wherein the second depth is greater than the first and the second width is greater than the first, as explained in more detail below becomes .
  • the slots 322, 323 have the same distances as the slots 31 3 of the receiving elements 303, in which case the distance from the slot center of a respective slot to the slot center of the next slot is meant.
  • the slots 322, 323 in the spaced contact and guide elements 307 are offset from each other.
  • the slots 313, 322, and 323 are aligned with each other such that a wafer (a pair of wafers) housed in the wafer boat respectively in two slots 313 (the spaced receiving members), a slot 322 (a contact and guide member 307) and a slot 323 (of the other contact and guide member 307) is received.
  • the depth and width of the slot 322 is selected such that the wafer (the pair of wafers) securely contacts the contact and guide element 307.
  • the depth and width of the slit 323, on the other hand, are chosen so that the wafer (the pair of wafers) does not contact the contact and guide element 307, as indicated in FIG. 16.
  • FIGS. 17 (a) and (b) show, for example, cross-sectional views through adjacent slots in the wafer boat.
  • the cut is such that it cuts a slot 322 in the left contact and guide member 307 and a slot 323 in the right contact and guide member 307. Accordingly, at the adjacent slot (view Fig. 17 (b)) in the left
  • insulating inserts could be provided in the slots 323, each having respective receiving slots for the wafer (a pair of wafers), or the slots 323 could have an insulating coating. In particular, it is possible to first form the slots 323 in the contact and guide element 307, and in
  • the contact and guide elements 307 may be formed relatively thin. However, to provide sufficient stability over the entire length of the wafer boat, in the illustrated embodiment of the wafer boat 300, a second rod-shaped member 330 is provided vertically below the contact and guide members 307 and extends between the end plates 303.
  • the element 330 is preferably formed of an electrically insulating material having sufficient stability that does not introduce impurities into the process and also has sufficient thermal stability, such as quartz or another suitable material.
  • the contact and guide element 307 can, as shown, rest directly on the element 330, or a plurality of supports can be provided between the lower element 330 and the contact and guide element 307.
  • the lower member 330 may have a round shape, but has no slots, thereby providing greater stability over a comparable slotted member, and may therefore support the contact and guide member 307 over the length thereof.
  • FIG. 8 to 20 show yet another alternative embodiment of a wafer boat 300.
  • This wafer boat 300 is broadly similar to the wafer boat 300 previously described with reference to Figures 15 to 17, and therefore the same reference numerals are used for the same or equivalent elements.
  • FIG. 18 is a schematic plan view of the wafer boat 300
  • FIG. 19 is a schematic sectional view of a portion thereof
  • FIG. 20 (a) and (b) are schematic cross-sectional views of a plasma processing apparatus having such a wafer boat 300.
  • the wafers are taken transversely to the longitudinal extent of the wafer boat 300.
  • the wafer boat 300 again has an elongated configuration, wherein at the ends of the wafer boat 300 each have an end plate 303 is provided, which may be formed as described above. Between the end plates 303
  • the contact and guide elements 307 between the second receiving elements 306 and the second receiving elements 306 lie in each case between a first receiving element 305 and a contact and guide element 307.
  • the contact and guide elements 307 have the same structure as described above, with upper and lower rod members 320, 330 and contact slots 222 and insulating slots 223, which are arranged offset in the respective contact and guide elements 307 to each other.
  • the first and second receiving elements 305, 306 extend between the end plates 303 and are secured thereto as described above.
  • the first and second receiving elements 305, 306 may again be made of quartz and each have an elongated rod shape.
  • the first and second receiving elements 305, 306 each have a basic shape, as in the wafer boat 300 according to the figures 1 5 to 17. They also each have a plurality of slots 330 corresponding to the
  • the slots 330 have two slot types that differ in size and function.
  • the first slot type which serves as a receiving slot 332, has a first depth and a first width suitable for receiving an edge area of a respective wafer or pair of wafers, for example in a back-to-back arrangement, contacting the slot.
  • the depth will be approximately equal to or less than an edge exclusion area of the wafers.
  • the second slot type serving as the insulating slot 333 has a second depth and a second width, which are larger than the first depth and the first width, respectively.
  • the insulating slots 333 are each suitably free of a peripheral region of a respective wafer or pair of wafers to be picked, i. E. H. without contacting herewith in the slot.
  • the receiving slots 332 and the insulating slots 333 alternate in the longitudinal direction of the receiving elements 305, 306, as can be seen in the view in FIG. 19.
  • the receiving slots 332 and the insulating slots 333 of the first receiving elements 305 are aligned with each other.
  • the receiving slots 332 and the insulating slots 333 of the second receiving elements 306 are aligned with each other.
  • the receiving slots 332 of the first receiving members 305 are aligned with the insulating slots 333 of the second receiving members 306 and the insulating slots 333 of the first receiving members 305 with the receiving slots 332 of the second receiving members 306.
  • the receiving and insulating slots 332, 333 of the first receiving elements 305 to the receiving and insulating slots 332, 333 of the second receiving elements 306 offset.
  • This configuration may in operation prevent a short circuit between adjacent wafers via the first and second receptacles 305, 306 in the event that conductive layers on the first and second receptacles are exposed during a plasma treatment (which, for example, involves the deposition of conductive layers on the wafers) Separate 305, 306.
  • recording elements 305, 306 also form a voltage between wafers accommodated in the wafer boat 300 in order to increase, for example, the contact area with the wafers and thus the area for the introduction of electrical power.
  • the operation of the plasma treatment apparatus 30 will now be described in greater detail below with reference to the drawings, in which a plasma-assisted silicon nitride or aluminum oxide deposition in a plasma stimulated by 13.56 MHz is described as an example.
  • the treatment device 30 can also be used for other plasma-assisted deposition processes, wherein the plasma can also be excited by other frequencies, for example in the 40 kHz range.
  • the coaxial line 74 is provided and optimized especially for frequencies in the MHz range.
  • a loaded wafer boat 1 of the type described above (as shown in FIG. 1) is loaded into the process chamber 38 and is closed by the closing mechanism, not shown.
  • the wafer boat 1 is loaded so that in each of the receiving slots 1 1 a total of 12 wafers, in the present example in particular Si wafer, are added, in each case six on each of the plates 6.
  • the wafers are so accommodated that they are pairwise opposite, as is known in the art.
  • the interior is at ambient pressure and can be purged or flooded with N 2 , for example via the gas control unit 60 (in combination with the vacuum control unit 62).
  • the tube member 36, and thus the process chamber 38, are heated by the heater, not shown, to heat the wafer boat 1 and the wafers received therein to a predetermined, process-beneficial process temperature.
  • the deflecting elements are in the second position (shown in dashed lines in FIG. 5) in order not to impair heating via convection. In this case, however, a heating of the inner plates 6 of the wafer boat 1 and the wafer picked up therebetween via a heating of the tubular element 36 can be tedious.
  • a DC or low frequency AC voltage may be applied to the wafer boat 1 to assist in heating via the electrical control unit 64.
  • the voltage is sufficiently high so that current is conducted via the high-resistance spacer elements 22 and these act as resistance heating elements.
  • heating power is specifically in the
  • Receiving slots 1 1 introduced so that compared to a heating from the outside much faster, the predetermined temperature can be achieved.
  • voltages in the range of at least 200 V to approximately 1 kV are considered to achieve sufficient current flow and heating of the spacers 22.
  • the electrical control unit 64 can first be deactivated and the process chamber is pumped to a predetermined negative pressure via the vacuum control unit 62.
  • the deflection elements 50 are automatically moved by the self-adjusting negative pressure or active in the first position (solid line in Fig. 5).
  • a desired process gas such as SiH / N H3 for a silicon nitride deposition in a defined mixing ratio is initiated via the gas control unit 60 in dependence on the required layer properties, while the negative pressure control unit 62 further maintains the negative pressure by suctioning the introduced process gas.
  • the process gas extracted via the pump 70 may be diluted with N 2 at this time, as known in the art.
  • N 2 is supplied. Due to the special arrangement of the gas guides 44, 46 in combination with the deflecting elements 50 is within the
  • Process chamber mainly generates a gas flow through the receiving slots 1 1 of the wafer boat 1. This can be formed homogeneously by the special arrangement of the gas ducts 44, 46 over the width and length of the wafer boat.
  • an RF voltage with a frequency of 13.56 MHz is now applied to the wafer boat 1.
  • This causes a plasma ignition of the process gas between the plates 6 and in particular between the wafers housed in the wafer boat 1 and there is a plasma-assisted silicon nitride deposition on the wafers.
  • the gas flow is maintained during the deposition process to avoid local depletion of the process gas with respect to the active components.
  • the electrical control unit 64 is in turn deactivated and the gas supply is stopped, or switched back to N 2 , in order to flush the process chamber 38 and if necessary to ventilate simultaneously (equalization to the atmospheric pressure).
  • the process chamber 38 can then be brought back to ambient pressure.
  • the wafer boat 1 of the above type offers the advantage, independent of other components of the treatment device, that during the heating phase it heats up directly in the region of the receiving slots 11 between the plates 6 of the wafer. boat 1 allowed. This is possible via the electrically conductive spacer elements 22. The fact that they are chosen especially high impedance, they affect the plasma formation when applying the RF voltage is not essential.
  • the special gas guide via the gas guides 44, 46 offers - again independently of other components of the treatment device, such as the special wafer boat 1 - the advantage of a homogeneous gas flow in the process chamber 38.
  • the deflecting a targeted gas flow through the receiving slots can be achieved .
  • a good gas exchange and a homogeneous gas distribution in the reaction chamber is guaranteed and it may possibly lower
  • Wafer boats 100, 200 and 300 offer a significantly reduced thermal mass compared to wafer boat 1, and the largely free-standing wafers heat better.
  • the pads 1 02, 104 and the plates 202, 204 can be used again to electrically conductive spacers to provide a local additional heating here during the heating phase.
  • a compensation for the thermal mass of the pads or plates can be created, which is not present in the free area of the wafer.
  • the wafer boat 300 allows a different alignment of the wafers, in particular at a constant
  • Process chamber allows the inclusion of larger wafers.
  • the treatment apparatus 30 and the wafer boat 1 have been explained in more detail with reference to certain embodiments of the invention with reference to the drawing, without being limited to the concrete embodiments shown dte.
  • the gas guides 44, 46 could take different forms or be arranged differently, as already indicated by FIGS. 7 to 9.
  • the plates 6 of the wafer boat 1 may have other dimensions and in particular be dimensioned for receiving a different number of wafers.
  • the treatment apparatus is shown in a horizontal orientation, and this also represents a preferred orientation.
  • most advantageous aspects of the present application also apply to a vertical chamber with a vertically arranged tubular element, wherein location details are to be reinterpreted as described above, below in lateral location , This applies in particular to the arrangement of

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Abstract

L'invention concerne des bacs de plaquettes destinés au traitement par plasma de plaquettes en forme de disque, en particulier des plaquettes de semi-conducteur destinées à des applications semi-conductrices ou photovoltaïques et un dispositif de traitement par plasma de plaquettes. Un bac de plaquettes comporte une pluralité de premiers éléments de réception qui sont parallèles entre eux et qui possèdent chacun une pluralité de fentes de réception destinées à recevoir une région de bord d'une plaquette ou d'une paire de plaquettes, ainsi qu'une pluralité de deuxièmes éléments de réception qui sont parallèles entre eux, qui sont électriquement conducteurs et qui possèdent au moins un évidement destiné à recevoir une région de bord d'au moins une plaquette ou d'une paire de plaquettes. Un autre bac de plaquettes comporte une pluralité d'éléments de réception électriquement conducteurs, en forme de plaque, qui sont parallèles entre eux et qui ont une hauteur qui est inférieure à la moitié de la hauteur de la plaquette à recevoir. Les éléments de réception comportent chacun, sur leurs côtés opposés, au moins trois éléments de réception destinés à recevoir des plaquettes. Les bacs de plaquettes peuvent être logés dans la chambre de traitement du dispositif de traitement par plasma qui comporte des moyens de commande ou de régulation de l'atmosphère de gaz de traitement dans la chambre de traitement et au moins une source de tension qui peut être reliée de manière appropriée aux éléments de réception électriquement conducteurs du bac de plaquettes pour appliquer une tension électrique entre deux plaquettes directement adjacentes logées dans le bac de plaquettes.
EP16713909.6A 2015-04-02 2016-04-01 Bac de plaquettes et dispositif de traitement par plasma de plaquettes Withdrawn EP3278358A1 (fr)

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DE102015004419.2A DE102015004419A1 (de) 2015-04-02 2015-04-02 Waferboot und Plasma-Behandlungsvorrichtung für Wafer
PCT/EP2016/057287 WO2016156607A1 (fr) 2015-04-02 2016-04-01 Bac de plaquettes et dispositif de traitement par plasma de plaquettes

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US20180066354A1 (en) 2018-03-08
WO2016156607A1 (fr) 2016-10-06
KR20170135903A (ko) 2017-12-08
DE102015004419A1 (de) 2016-10-06
TW201704563A (zh) 2017-02-01

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