CN211848134U - 一种加热装置和镀膜设备 - Google Patents

一种加热装置和镀膜设备 Download PDF

Info

Publication number
CN211848134U
CN211848134U CN202020074649.9U CN202020074649U CN211848134U CN 211848134 U CN211848134 U CN 211848134U CN 202020074649 U CN202020074649 U CN 202020074649U CN 211848134 U CN211848134 U CN 211848134U
Authority
CN
China
Prior art keywords
heating
graphite boat
cantilever
cavity
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202020074649.9U
Other languages
English (en)
Inventor
赵赞良
赵永涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningxia Longi Solar Technology Co Ltd
Original Assignee
Ningxia Longi Solar Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ningxia Longi Solar Technology Co Ltd filed Critical Ningxia Longi Solar Technology Co Ltd
Priority to CN202020074649.9U priority Critical patent/CN211848134U/zh
Priority to EP20914312.2A priority patent/EP4092155A4/en
Priority to PCT/CN2020/096139 priority patent/WO2021143041A1/zh
Application granted granted Critical
Publication of CN211848134U publication Critical patent/CN211848134U/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本实用新型实施例公开了一种加热装置和镀膜设备，包括：加热腔体、悬臂管、石墨舟、第一加热件和第二加热件；悬臂管设置在加热腔体的内部，且与加热腔体的内表面间隔预设距离；石墨舟设置在所述悬臂管上；第一加热件设置在所述悬臂管内；第二加热件设置在加热腔体的表面；加热装置通过第一加热件对石墨舟底部进行加热，通过第二加热件对所述加热腔体进行加热。本实用新型实施例中，由于所述悬臂管与加热腔体的内表面之间间隔设置，故碎硅片不会覆盖在悬臂管的外表面，从而避免了对石墨舟底部的加热不均匀；再者，由于利用悬臂管中的第一加热件直接对石墨舟进行加热，相比现有技术中利用辅助加热管的方式，能够提高所述加热装置的加热效率。

Description

一种加热装置和镀膜设备
技术领域
本实用新型涉及太阳能电池技术领域，特别是涉及一种加热装置和镀膜设备。
背景技术
目前，可采用管式PECVD(Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学的气相沉积法)设备对硅片进行镀膜。管式PECVD设备是将搭载有硅片的石墨舟设置在加热的工艺炉腔内，从而完成对硅片的镀膜。
但是，由于石墨舟宽度较宽，石墨舟中间部位距腔壁较远，加热速度慢，为了使石墨舟受热均匀，目前的方式是在工艺炉腔底部铺设辅助加热管的方式对石墨舟中间底部加热。
但是，目前的加热方式存在以下问题，一是碎硅片易于覆盖底部辅助加热管，造成辅助加热管对石墨舟底部加热不均匀；二是辅助加热管和石墨舟底部之间有悬臂管阻隔，从而减少了石墨舟对热量的吸收。
实用新型内容
为解决以上技术问题，本实用新型公开了一种加热装置和镀膜设备。
第一方面，本实用新型公开了一种加热装置，包括：加热腔体、悬臂管、石墨舟、第一加热件和第二加热件；
所述悬臂管设置在所述加热腔体的内部，且与所述加热腔体的内表面间隔预设距离；
所述石墨舟设置在所述悬臂管上；
所述第一加热件设置在所述悬臂管内；
所述第二加热件设置在所述加热腔体的表面；
所述加热装置通过第一加热件对所述石墨舟底部进行加热，通过所述第二加热件对所述加热腔体进行加热。
可选地，所述悬臂管的管体靠近所述石墨舟的位置处设置有缺口，所述缺口沿所述悬臂管的轴向延伸。
可选地，所述悬臂管包括空心圆柱体结构。
可选地，所述悬臂管的数量为多个。
可选地，所述第一加热件和所述第二加热件均包括加热电阻丝。
可选地，所述石墨舟上设置有容纳硅片的容纳槽。
第二方面，本实用新型还公开了一种镀膜设备，所述设备包括所述的加热装置。
可选地，还包括射频电源，所述射频电源与所述加热装置中的所述石墨舟连接。
与现有技术相比，本实用新型实施例包括以下优点：
本实用新型实施例中，在所述加热腔体内部，与所述加热腔体的内表面间隔设置有悬臂管，由于所述悬臂管与所述加热腔体的内表面之间间隔设置，故碎硅片不会覆盖在所述悬臂管的外表面，从而避免了所述悬臂管中的第一加热件对石墨舟底部的加热不均匀；再者，由于利用悬臂管中的第一加热件直接对石墨舟进行加热，相比现有技术中利用辅助加热管的方式，悬臂管与第一加热件之间并未间隔其它部件或间距，故能够提高所述加热装置的加热效率。最后利用悬臂管中的第一加热件直接对石墨舟进行加热，热量直接作用到石墨舟底，增加了石墨舟底部受热的均匀性，利于镀膜的均匀性，可减少因镀膜不均匀产生的返工；同时减少了对石墨舟底部加热的时间，可增加设备产能。
附图说明
图1是本实用新型实施例的一种加热装置的结构示意图；
图2是本实用新型实施例的一种加热装置的结构侧面示意图；
图3是本实用新型实施例的另一种加热装置的结构侧面示意图。
附图标记：
1-加热腔体、2-悬臂管、3-石墨舟、4-第一加热件、5-缺口、6-射频电源。
具体实施方式
为使本实用新型实施例的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本实用新型实施例作进一步详细的说明。
本实用新型实施例提供了一种加热装置，包括：加热腔体、悬臂管、石墨舟、第一加热件和第二加热件；所述悬臂管设置在所述加热腔体的内部，且与所述加热腔体的内表面间隔预设距离；所述石墨舟设置在所述悬臂管上；所述第一加热件设置在所述悬臂管内；所述第二加热件设置在所述加热腔体的表面；所述加热装置通过第一加热件对石墨舟底部进行加热，通过第二加热件对所述加热腔体进行加热。
在本实用新型中，所述加热装置可以应用于管式PECVD镀膜设备中。
本实用新型实施例中，参照图1和图2，所述加热腔体1内部设置有悬臂管2，所述悬臂管2的外表面上设置有石墨舟3，由于所述石墨舟3直接设置在所述悬臂管2的外表面上，中间并未间隔其它部件或间距，所以利用所述悬臂管2内设置的第一件热件4对所述石墨舟进行加热，能够提高所述加热装置的加热效率。再者，由于所述悬臂管2与所述加热腔体1的内表面之间具有间隔，故石墨舟3上掉落的碎硅片不会覆盖在所述悬臂管2的外表面，从而避免了对石墨舟3底部的加热不均匀。
可选地，所述悬臂管与所述加热腔体内部间隔的预设距离可根据所述加热腔体内的具体结构进行设定，本实用新型实施例作此设置，是为了使石墨舟上掉落的碎硅片不会覆盖在所述悬臂管的外表面上，故对此预设距离不作具体的限定。
作为一种具体的示例，所述悬臂管具有中空结构，在所述中空结构处设置第一加热件，通过悬臂管承载石墨舟进入加热腔体内，此时加热腔体的腔门关闭，悬臂管中的第一加热件开始加热，石墨舟底部受热，达到指定温度时停止加热，真空泵抽除加热腔体内的空气，再向炉腔内通入硅烷和氨气，稳定气体压力，射频电源开始放电，电离硅烷和氨气，反应产生氮化硅镀到硅片表面。
本实用新型实施例中，所述加热腔体外壁设置的第二加热件用于对加热腔体进行加热，从而将石墨舟加热至工艺温度，石墨舟上搭载的硅片也达到工艺温度，加热腔体抽除掉空气，再向加热腔体内通入硅烷和氨气，稳定气体压力后，射频电源开始放电。
目前，现有技术对石墨舟底部加热，采用的是在石墨舟底部，腔体下壁增加辅热管的方式，本实用新型实施例采用悬臂管加热，热量直接作用到石墨舟底，增加了石墨舟底部受热的均匀性，利于镀膜的均匀性，可减少因镀膜不均匀产生的返工；同时减少了对石墨舟底部加热的时间，可增加设备产能。
可选地，所述悬臂管的管体靠近所述石墨舟的位置处设置有缺口，所述缺口沿所述悬臂管的轴向延伸。
本实用新型实施例中，参照图3，所述悬臂管2的管体上设置有缺口5，所述缺口5沿所述悬臂管的轴向延伸。可选地，所述缺口5靠近所述石墨舟3设置。由于所述悬臂管2的管体上设置有轴向延伸的缺口5，故所述第一加热件在加热后，能够将更多的热量传递给石墨舟3，进一步提高了所述加热装置的加热效率。可以理解的，本实用新型实施例对所述缺口5在悬臂管的管壁上的具体位置不作具体限定，只要能够保证所述第一加热件能够设置在所述悬臂管内设置，且能够提高所述加热装置的加热效率。
可选地，所述悬臂管包括空心圆柱体结构。
本实用新型实施例中，由于所述悬臂管内设置第一加热件，故设置所述悬臂管为空心结构，又，将所述悬臂管设置为圆柱体结构能够避免所述石墨舟上散落的硅片覆盖在所述悬臂管的外表面，影响所述第一加热件对所述石墨舟加热的均匀性。可以理解的，所述悬臂管也可以为其它空心结构，例如，空心正六面体结构，空心正正三面体结构等，本实用新型实施例对此不作具体的限定。
可选地，所述悬臂管的数量为多个。
本实用新型实施例中，为了进一步提高所述悬臂管中第一加热件对石墨舟的加热效率，可以根据所述加热腔体的结构，设置所述悬臂管的数量为多个，且每个悬臂管内均设置有第一加热件，利用所述多个悬臂管内的第一加热件对所述石墨舟进行加热，能够提高所述加热装置对石墨舟的加热效率。可选地，所述多个悬臂管均匀的布置在所述石墨舟的底部，以上设置能够使石墨舟的底部均匀受热。可选地，参照图2或图3，所述悬臂管的数量为2个。
可选地，所述第一加热件和所述第二加热件均包括加热电阻丝。
本实用新型实施例中，利用所述加热电阻丝进行加热是最简单的基于电力的加热方法，且加热效率几乎可达到100％，同时工作温度可达到2000℃。故而可应用于高温加热。本实用新型采用加热电阻丝进行加热能够满足对石墨舟的加热温度需求，也能够满足对加热腔体加热的温度需求，且实用性高，使用价值高。当然，所述第一加热件或第二加热件也可以为其它加热件，例如加热管等，对此，本实用新型实施例不作具体的限定。
可选地，所述石墨舟上设置有容纳硅片的容纳槽。
本实用新型实施例中，在所述石墨舟上设置容纳硅片的容纳槽用于放置硅片，从而完成对硅片的镀膜工艺，当然，根据其它需求，在所述石墨舟上设置容纳其它需要镀膜的物品或器件，本实用新型实施例对此不做限定。
本实用新型实施例在所述加热腔体内部，且与所述加热腔体的内表面间隔设置有悬臂管，由于所述悬臂管与所述加热腔体的内表面之间间隔设置，故碎硅片不会覆盖在所述悬臂管的外表面，从而避免了所述悬臂管中的第一加热件对石墨舟底部的加热不均匀；再者，由于利用悬臂管中的第一加热件直接对石墨舟进行加热，相比现有技术中利用辅助加热管的方式，悬臂管与第一加热件之间并未间隔其它部件或间距，故能够提高所述加热装置的加热效率。最后利用悬臂管中的第一加热件直接对石墨舟进行加热，热量直接作用到石墨舟底，增加了石墨舟底部受热的均匀性，利于镀膜的均匀性，可减少因镀膜不均匀产生的返工；同时减少了对石墨舟底部加热的时间，可增加设备产能。
本实用新型实施例，还公开了一种镀膜设备，所述设备包括所述的加热装置。
可选地，所述加热装置还包括射频电源，所述射频电源与所述加热装置中的所述石墨舟连接。
本实用新型实施例中，参照图3，所述加热装置还包括射频电源6，所述射频电源6与所述石墨舟3电连接。在所述石墨舟上安装有硅片的情况下，所述射频电源放电后，能够电离所述加热腔体内通入的硅烷和氨气。从而反应产生氮化硅镀到硅片表面，完成所述硅片的镀膜工艺。
本实用新型中的镀膜设备可以为管式PECVD(等离子体增强化学的气相沉积法)镀膜设备。由于所述镀膜设备包括所述加热装置，所述加热装置在所述加热腔体内部，且与所述加热腔体的内表面间隔设置有悬臂管，由于所述悬臂管与所述加热腔体的内表面之间间隔设置，故碎硅片不会覆盖在所述悬臂管的外表面，从而避免了所述悬臂管中的第一加热件对石墨舟底部的加热不均匀；再者，由于利用悬臂管中的第一加热件直接对石墨舟进行加热，相比现有技术中利用辅助加热管的方式，悬臂管与第一加热件之间并未间隔其它部件或间距，故能够提高所述加热装置的加热效率。最后利用悬臂管中的第一加热件直接对石墨舟进行加热，热量直接作用到石墨舟底，增加了石墨舟底部受热的均匀性，利于镀膜的均匀性，可减少因镀膜不均匀产生的返工；同时减少了对石墨舟底部加热的时间，可增加设备产能。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
以上对本实用新型实施例所提供的光伏瓦进行了详细介绍，本文中应用了具体个例对本实用新型实施例的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本实用新型实施例的方法及其核心思想；同时，对于本领域的一般技术人员，依据本实用新型实施例的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本实用新型实施例的限制。

Claims (8)

1.一种加热装置，其特征在于，包括：加热腔体、悬臂管、石墨舟、第一加热件和第二加热件；
所述悬臂管设置在所述加热腔体的内部，且与所述加热腔体的内表面间隔预设距离；
所述石墨舟设置在所述悬臂管上；
所述第一加热件设置在所述悬臂管内；
所述第二加热件设置在所述加热腔体的表面；
所述加热装置通过所述第一加热件对所述石墨舟底部进行加热，通过所述第二加热件对所述加热腔体进行加热。
2.根据权利要求1所述的加热装置，其特征在于，所述悬臂管的管体靠近所述石墨舟的位置处设置有缺口，所述缺口沿所述悬臂管的轴向延伸。
3.根据权利要求1所述的加热装置，其特征在于，所述悬臂管包括空心圆柱体结构。
4.根据权利要求1所述的加热装置，其特征在于，所述悬臂管的数量为多个。
5.根据权利要求1所述的加热装置，其特征在于，所述第一加热件和所述第二加热件均包括加热电阻丝。
6.根据权利要求1所述的加热装置，其特征在于，所述石墨舟上设置有容纳硅片的容纳槽。
7.一种镀膜设备，其特征在于，所述设备包括权利要求1-6任一所述的加热装置。
8.根据权利要求7所述的镀膜设备，其特征在于，还包括射频电源，所述射频电源与所述加热装置中的所述石墨舟连接。
CN202020074649.9U 2020-01-14 2020-01-14 一种加热装置和镀膜设备 Active CN211848134U (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202020074649.9U CN211848134U (zh) 2020-01-14 2020-01-14 一种加热装置和镀膜设备
EP20914312.2A EP4092155A4 (en) 2020-01-14 2020-06-15 HEATING DEVICE AND FILM COATING DEVICE
PCT/CN2020/096139 WO2021143041A1 (zh) 2020-01-14 2020-06-15 一种加热装置和镀膜设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202020074649.9U CN211848134U (zh) 2020-01-14 2020-01-14 一种加热装置和镀膜设备

Publications (1)

Publication Number Publication Date
CN211848134U true CN211848134U (zh) 2020-11-03

Family

ID=73212678

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202020074649.9U Active CN211848134U (zh) 2020-01-14 2020-01-14 一种加热装置和镀膜设备

Country Status (3)

Country Link
EP (1) EP4092155A4 (zh)
CN (1) CN211848134U (zh)
WO (1) WO2021143041A1 (zh)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013175562A1 (ja) * 2012-05-22 2013-11-28 株式会社島津製作所 半導体製造装置
DE102015004419A1 (de) * 2015-04-02 2016-10-06 Centrotherm Photovoltaics Ag Waferboot und Plasma-Behandlungsvorrichtung für Wafer
NL2017558B1 (en) * 2016-09-30 2018-04-10 Tempress Ip B V A chemical vapour deposition apparatus and use thereof
CN107164745A (zh) * 2017-05-11 2017-09-15 湖南红太阳光电科技有限公司 一种晶体硅硅片蒸镀减反射膜的方法
CN108950514B (zh) * 2018-08-28 2020-05-12 洛阳尚德太阳能电力有限公司 晶硅太阳能电池管式pecvd预热储舟装置及镀膜方法
CN209636318U (zh) * 2019-01-08 2019-11-15 深圳丰盛装备股份有限公司 一种pecvd辅助加热装置
CN117051383A (zh) * 2019-08-29 2023-11-14 北京北方华创微电子装备有限公司 加热炉体和半导体设备

Also Published As

Publication number Publication date
WO2021143041A1 (zh) 2021-07-22
EP4092155A1 (en) 2022-11-23
EP4092155A4 (en) 2024-02-21

Similar Documents

Publication Publication Date Title
CN108987304A (zh) 基板处理设备、基板处理方法以及基板支撑装置
TW200822814A (en) Shower plate, method for producing the same, plasma processing apparatus using the shower plate, plasma processing method, and method for manufacturing electronic device
CN108456874B (zh) 一种管式pecvd设备石墨舟电极引入装置
TW201704563A (zh) 晶舟以及晶圓處理裝置
CN2768200Y (zh) 衬底支撑组件
CN214458316U (zh) 管式pecvd设备的电极结构
CN211848134U (zh) 一种加热装置和镀膜设备
WO2024027294A1 (zh) 热丝化学气相沉积设备、硅基薄膜沉积方法及太阳能电池
CN112136202A (zh) 用于在等离子体增强化学气相沉积腔室中抑制寄生等离子体的设备
WO2016164569A1 (en) Process gas preheating systems and methods for double-sided multi-substrate batch processing
CN101448357B (zh) 等离子体处理设备
JP2009167445A (ja) プラズマ処理装置
EP1959480A1 (en) Plasma processing apparatus and plasma processing method
CN113410134A (zh) 一种实现低温扩散的硼源
KR20090001030A (ko) 반도체 제조설비
US11410869B1 (en) Electrostatic chuck with differentiated ceramics
CN109423631B (zh) 气相沉积均匀加热装置及气相沉积炉
KR101199972B1 (ko) 배치식 플라즈마 처리 장치 및 이를 이용한 플라즈마 처리 방법
KR101349194B1 (ko) 유연한 실리콘 와이어 제조 장치
CN113151806A (zh) 一种低压化学气相沉积炉进气装置
KR101134570B1 (ko) 반도체 제조용 유체가열장치
CN209568143U (zh) 一种镀膜系统
US20240038909A1 (en) Method for producing a solar cell
CN113629161B (zh) 间歇等离子体氧化方法和装置、太阳电池的制备方法
CN219280025U (zh) 化学气相沉积装置

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant