WO2020208146A1 - Bac de plaquettes et dispositif de traitement de plaquettes - Google Patents

Bac de plaquettes et dispositif de traitement de plaquettes Download PDF

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Publication number
WO2020208146A1
WO2020208146A1 PCT/EP2020/060170 EP2020060170W WO2020208146A1 WO 2020208146 A1 WO2020208146 A1 WO 2020208146A1 EP 2020060170 W EP2020060170 W EP 2020060170W WO 2020208146 A1 WO2020208146 A1 WO 2020208146A1
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WO
WIPO (PCT)
Prior art keywords
plates
group
wafer boat
contact
wafers
Prior art date
Application number
PCT/EP2020/060170
Other languages
German (de)
English (en)
Inventor
Michael Klick
Lutz Eichhorn
Dirk SUCHLAND
Original Assignee
Plasmetrex Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plasmetrex Gmbh filed Critical Plasmetrex Gmbh
Publication of WO2020208146A1 publication Critical patent/WO2020208146A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a wafer boat and a treatment device for wafers which are suitable for generating a plasma between wafers accommodated therein.
  • wafers In semiconductor and solar cell technology, it is known to subject disk-shaped substrates made of different materials, which are hereinafter referred to as wafers regardless of their geometric shape and material, to different processes.
  • the wafers are often both individual treatment processes and batch processes, i.e. Processes in which several wafers are treated at the same time.
  • the wafers have to be brought into the desired treatment position.
  • batch processes this is usually done by inserting the wafers into so-called boats, which have receptacles for a large number of wafers.
  • the wafers are usually arranged parallel to one another.
  • Such boats can be passive, so that they have no other function besides a holding function during the processing of the wafers.
  • the wafer boat is formed, for example, by a large number of electrically conductive plates, which usually consist of graphite.
  • the plates are arranged essentially parallel to one another, and receiving slots for receiving wafers are formed between adjacent plates.
  • the sides of the plates facing one another each have corresponding receiving elements for wafers, so that wafers can be received on each of these sides.
  • receiving elements there are usually pins on each side of the plate facing another plate provided, which accommodate the wafer. In each receiving slot, at least two wafers can thus be completely received between the plates in such a way that they are opposite one another.
  • Adjacent plates of the wafer boat are usually electrically insulated from one another and an alternating voltage, usually in the kHz range or also in the MHz range, is applied between directly adjacent plates during the process.
  • a plasma is intended to be formed between the plates and in particular between the wafers held on the respective plates in order to provide a plasma treatment such as, for example, plasma deposition or plasma nitridation of layers.
  • spacer elements are used, each of which has a predetermined length for setting predetermined distances between the plates.
  • electrically conductive elements are used at the contact ends of the plates in order to connect every second plate in an electrically conductive manner in order to be able to apply the same potential to it.
  • These conductive elements have as low a resistance as possible in order to allow uniform loading of the plates and to limit losses in the elements.
  • Plasma deposition processes (PECVD) in wafer boats can advantageously be used at higher frequencies, e.g. 13.56 MHz.
  • a high current of over 50A for example (typically 100A for approx. 400 wafers) is required. This high current leads to high power losses on contact and connection elements due to ohmic losses, high voltages and thus parasitic plasmas due to lead inductances.
  • the present invention is therefore based on the object of providing a wafer boat and a method for plasma treatment of wafers, which enable improved processing of the wafers. According to the invention, this object is achieved by a wafer boat according to claim 1, a plasma treatment device according to claim 11 and a method according to claim 16. Further refinements of the invention emerge from the respective subclaims.
  • a wafer boat for the plasma treatment of disc-shaped wafers, in particular semiconductor wafers, which has the following: a plurality of plates made of an electrically conductive material, arranged parallel to one another, each having at least one receptacle for a wafer on their mutually facing sides, which have a receiving area of the plates, the plates being interconnected in such a way that a first number of the plates forms a first group of electrically conductively interconnected plates, a second number of the plates forms a second group of electrically conductively interconnected plates, the plates of the first and second group are provided alternately and between plates of the first and second groups at least one plate is provided, which is not electrically connected to the plates of the first or second group.
  • This structure of the wafer boat allows at least two plasmas to be connected in series during operation.
  • the high-frequency current thus not only flows through a plasma but, for example, two plasmas which are each separated by the at least one plate that is not electrically connected to the plates of the first or second group. Since, for example, every second plate - the plate lying between the plates of the first and second group of plates - is not in contact in a boat, the voltage of the non-contacted plates is set automatically via an essentially capacitive voltage division. There is thus a series connection of plasmas between the plates of the first and second group of plates. In one embodiment of the invention, every fourth of the plates is electrically conductively connected to the others within the first and second groups. This enables two plasmas to be connected in series between the plates of the first and second groups, which are separated by the at least one plate that is not electrically connected to the plates of the first or second group.
  • two plates which are not electrically connected to the plates of the first or second group, are provided between plates of the first and second group.
  • This enables a series connection of three plasmas between the plates of the first and second group.
  • a correspondingly higher voltage is required between the plates of the first and second group of plates in comparison to the previous embodiment in order to achieve a corresponding plasma ignition.
  • every sixth of the plates is electrically conductively connected to the others.
  • the plates are each held at a distance from one another via spacer elements, the spacer elements each being insulating or having a resistance of at least 20 k ⁇ , preferably in the range of 40 k ⁇ .
  • the spacer elements with a resistance of at least 20k ⁇ , it is possible to cause a current to flow through the spacer elements by applying a direct voltage or a low-frequency alternating voltage between the plates of the first and second group of plates, thereby creating a resistance heating effect.
  • the spacer elements In the case of a high-frequency alternating voltage, however, the spacer elements have an insulating effect.
  • the spacer elements can for example consist of polysilicon.
  • the plates of at least the first and second group each have contact lugs at their longitudinal ends, which are electrically conductively connected via contact elements to contact lugs of other plates of the same group, the contact lugs of the plates first group are in a different plane than the contact tabs of the plates of the second group.
  • the combined thermal mass of the sum of the contact elements and the sum of the contact lugs is preferably smaller than the thermal mass of the rest of the wafer boat, in particular less than 1/10 of the thermal mass of the rest of the wafer boat. Furthermore, the impedance of the sum of the contact blocks and the sum of the contact lugs is preferably smaller than the impedance of the rest of the wafer boat.
  • the plates of at least the first and second groups are each electrically conductively connected via at least one contact element extending below the plates, the contact elements for the plates of the first and second group being spaced from one another in the longitudinal direction of the plates.
  • a plasma treatment device for wafers which has a process space for receiving a wafer boat of the type described above.
  • the plasma treatment device also has means for controlling or regulating a process gas atmosphere in the process space and at least one voltage source which can be connected in a suitable manner to the plates of the first and second group of plates, in order to apply sufficient electrical voltage between the plates of the first and second group of plates to generate between the plates of the first and second group of plates a series of at least two plasmas which are separated by the at least one plate which are not electrically connected the plates of the first or second group is connected.
  • Such a plasma treatment device enables an improved plasma treatment of wafers.
  • the at least one voltage source is preferably suitable for applying at least one high-frequency alternating voltage and optionally a direct voltage or a low-frequency alternating voltage. While the high-frequency alternating voltage is suitable for plasma generation, the optional direct voltage or low-frequency alternating voltage can be used in combination with certain spacer elements for resistance heating.
  • the plasma treatment device has at least one additional heating unit for heating the process space and the wafers received therein.
  • a large number of wafers are accommodated in wafer boats of the type described above, which are located in a process chamber.
  • a high-frequency alternating voltage is applied between the plates of the first and second group of plates in such a way that, during a process phase, a row of at least two plasmas is generated between the plates of the first and second group of plates, which are generated by the at least one plate which is not electrically connected to the plates of the first or second group are separated.
  • the temperature and / or the gas atmosphere in the process chamber is preferably controlled or regulated before and / or during the plasma generation.
  • a direct voltage or a low-frequency alternating voltage is applied in order to cause a current to flow in spacer elements between the plates and thereby a resistance heating effect.
  • FIG. 1 shows a schematic side view of a wafer boat
  • FIG. 2 shows a schematic plan view of the wafer boat according to FIG. 1;
  • FIG. 3 shows a schematic front view of the wafer boat according to FIG. 1;
  • FIG. 4 shows a schematic view of a plasma treatment device with a wafer boat accommodated therein according to FIG. 1;
  • FIG. 5 shows a schematic plan view of an alternative wafer boat for use in a plasma treatment device
  • FIG. 6 shows a schematic front view of the wafer boat according to FIG. 1.
  • FIG. 1 showing a schematic side view of a wafer boat 1 and FIGS. 2 and 3 showing a top view and a front view.
  • the same reference symbols are used in the figures, provided that the same or similar elements are described.
  • the wafer boat 1 is formed by a multiplicity of plates 6, contacting units 7 and clamping units 8.
  • the illustrated wafer boat 1 is especially suitable for a layer deposition from a plasma, for example of Si3N4, SiNx, a-Si, etc., and in particular a plasma nitriding of wafers.
  • the plates 6 each consist of an electrically conductive material and are designed in particular as graphite plates, it being possible for the plate base material to be coated or surface treated depending on the process.
  • the plates 6 each have six cutouts 10 which are covered by the wafers during the process, as will be explained in more detail below. Although six recesses are provided per plate 6 in the form shown, it should be noted that a larger or smaller number can also be provided.
  • a total of twenty-three plates 6 are provided, which are arranged essentially parallel to one another via the corresponding contacting units 7 and clamping units 8, in order to form receiving slots 11 between them. With twenty-three plates 6, twenty-two of the receiving slots 11 are thus formed.
  • the invention is not limited to a specific number of plates.
  • the plates 6 each have, at least on their side facing an adjacent plate 6, groups of three receiving elements 12 each, which are arranged such that they can receive a wafer in between.
  • the groups of the receiving elements 12 are each arranged around each recess 10, as is indicated schematically in FIG. 1.
  • the wafers can be received in such a way that the receiving elements each contact different side edges of the wafer.
  • a total of six groups of receiving elements for receiving a semiconductor wafer are provided in the longitudinal direction of the plate elements (corresponding to the recesses 10).
  • some of the plates 6 have contact lugs 13 projecting in the longitudinal direction, which are used for electrical contacting of the plates 6, as will be explained in more detail below.
  • Three embodiments of plates 6 are provided, which differ with regard to the contact tabs 13.
  • the contact lugs 13 are each carried out directly adjacent to the lower edge (type 1), while in another embodiment they are spaced from the lower edge (type 2), the distance to the lower edge being greater than the height of the contact lugs 13 of the Panels of the other embodiment.
  • the embodiments of plates 6 are arranged in the wafer boat 1 in such a way that plates of type 1 and type 2 alternate and in each case a plate of type 3 is arranged between them.
  • the contact lugs 13 of plates 6 of type 1 and of type 2 lie on different levels in the arrangement of the wafer boat 1. In every fourth plate 6, however, the contact lugs 13 lie in the same plane. In this way, two spaced-apart contact planes are formed by the contact lugs 13.
  • the contact lugs 13 lying in a respective contact plane are electrically connected via contact elements, which are also referred to as contact blocks 15, made of a material with good electrical conductivity, in particular graphite, and are arranged at a predetermined distance from one another.
  • contact elements which are also referred to as contact blocks 15, made of a material with good electrical conductivity, in particular graphite, and are arranged at a predetermined distance from one another.
  • contact blocks 15 In the area of the contact lugs 13 and in each of the contact blocks 15, at least one through opening is provided. In the mutually aligned state, these allow a clamping element 16 to be passed through, which has a shaft part (not visible) and a head part, such as a screw, for example.
  • the plates 6 can then be fixed to one another via a counter-element acting on the free end of the shaft part, such as a nut 17, for example.
  • the tensioning element 16 can consist of electrically conductive material, but this is not necessary.
  • the contact blocks 15 each preferably have the same length (in the direction that defines the distance between contact lugs 13 of the plates 6), namely corresponding to the width of four receiving slots 11 plus the width of three plates 6.
  • the contact blocks 15 are preferably designed so that they have a low thermal mass and in particular the sum of the contact blocks should have a lower thermal mass than the sum of the plates 6.
  • the combined thermal mass of the sum of the contact blocks and the sum of the contact lugs 13 of the plates should be less than the thermal mass the sum of the plates 6 minus the thermal mass of the respective contact lugs 13.
  • the shaft parts of the tensioning element 19 are each dimensioned such that they can extend through corresponding openings in all plates 6 as well as respective spacer elements 22 located between them. All the plates 6 can then be fixed essentially parallel to one another via the at least one counter element 20.
  • clamping units with spacer elements 22 are conceivable, which arrange the plates 6 with spacer elements 22 in between them essentially parallel and clamp them.
  • 308 spacer elements are provided for 22 receiving slots and a total of 14 spacer elements 22 per slot (seven adjacent to the upper edge and seven adjacent to the lower edge).
  • the tensioning elements 19 are preferably made of an electrically insulating material, while the spacer elements 22 can be made of an electrically insulating or a conductive material. If the spacer elements 22 consist of an electrically conductive material, in particular, the material has such a high resistance that the spacer elements serve as a resistance element when a direct or low frequency voltage with sufficient amplitude is applied, but none when a high frequency voltage is applied (to generate a plasma between the plates) Provide substantial damping of wave propagation. For the low-frequency voltage, in particular, a frequency range from 1 to 10 KHz and for the high-frequency voltage a range above 40 KHz - especially frequencies in the MHz range - are taken into account.
  • each spacer element should, for example, have a resistance of greater than 3k ⁇ , in particular greater than 20k ⁇ or even greater than 40k ⁇ .
  • the spacer elements can consist of doped silicon, polysilicon or another suitable material that on the one hand is not impaired by the process and on the other hand does not impair the process, in particular does not introduce any impurities into the process. While the plates 6 of a group (upper contact nose 13 / lower contact nose 13) are electrically connected and fixed to one another via the contact elements 15, all of the plates are connected and fixed to one another via the spacer elements 22.
  • FIG. 4 showing a schematic side view of the treatment device 30.
  • the treatment device 30 consists of a process chamber part 32 and a control part 34.
  • the process chamber part 32 consists of a tube element 36 which is closed on one side and which forms a process chamber 38 inside.
  • the open end of the tubular element 36 is used to load the process chamber 38 and it can be closed and hermetically sealed via a closing mechanism (not shown), as is known in the art.
  • the pipe element consists of a suitable material that does not introduce any impurities into the process, is electrically insulated and can withstand the process conditions in terms of temperature and pressure (vacuum), such as quartz.
  • the tubular element 36 has gas-tight feedthroughs for the supply and discharge of gases and electricity, which can be designed in a known manner. Corresponding supply and discharge lines could, however, also be provided at the other end or also laterally at a suitable location between the ends.
  • the tubular element 36 is surrounded by a casing 40 which thermally insulates the tubular element 38 from the environment.
  • a heating device such as a resistance heater, which is suitable for heating the tubular element 36.
  • a sausage device can, for example, also be provided in the interior of the tubular element 36, or the pipe element itself could be designed as a sausage device. At the moment, however, preference is given to an external curing device, and in particular one that has different, individually controllable meat circles.
  • receiving elements In the interior of the tubular element 36 , receiving elements, not shown in detail, are provided which have a receiving plane for receiving a wafer boat 1 (which is only partially shown in Fig. 4), which can for example be of the above type. However, the wafer boat can also be inserted into the tubular element 36 in such a way that it rests on the wall of the tubular element 36. The wafer boat is held essentially above the receiving plane and is arranged approximately in the middle of the tubular element.
  • a receiving space is thus defined in combination with the dimensions of the wafer boat, in which a properly inserted wafer boat is located.
  • the wafer boat can be handled as a whole in the loaded state into and out of the process chamber 38 via a suitable handling mechanism (not shown).
  • a suitable handling mechanism not shown.
  • electrical contact is automatically established with at least one contact block 15 of each of the groups of plates 6 having a contact block, as will be explained in more detail below.
  • a lower gas guide tube 44 and an upper gas guide tube 46 are also provided, which consist of a suitable material such as quartz and allow process gas to be fed in or discharged.
  • the control part 34 of the treatment device 30 has a gas control unit 60, vacuum control unit 62, an electrical control unit 64 and a temperature control unit (not shown), all of which can be controlled jointly via a higher-level controller, such as a processor.
  • the temperature control unit is connected to the heating unit (not shown) in order to primarily control or regulate the temperature of the tubular element 36 or the process chamber 38.
  • the gas control unit 60 is in communication with a multiplicity of different gas sources 66, 67, 68, such as for example gas cylinders, which contain different gases.
  • gas sources can provide di-chlorosilane, tri-chlorosilane, SihU, phosphine, borane, di-borane, German, Ar, h, TMA Nhh, N2 and various other gases at corresponding inputs of the gas control unit 60.
  • the gas control unit 60 has two outlets, one of which is connected to the lower gas guide tube 44 and the other to a pump 70 of the negative pressure control unit 62.
  • the gas control unit 60 can connect the gas sources to the outlets in a suitable manner and regulate the flow of gas as is known in the art.
  • the gas control unit 60 can thus introduce different gases into the process chamber, in particular via the lower gas guide tube 44.
  • the vacuum control unit 62 essentially consists of the pump 70 and a pressure regulating valve 72.
  • the pump 70 is connected to the upper gas guide tube 46 via the pressure regulating valve 72 and can pump the process chamber to a predetermined pressure via this.
  • the connection from the gas control unit 60 to the pump is used to dilute process gas pumped out of the process chamber with N2, if necessary.
  • the electrical control unit 64 has at least one voltage source which is suitable to provide at least one of the following at an output thereof, a direct voltage, a low-frequency voltage and a high-frequency voltage.
  • the output of the electrical control unit 64 is connected via a line to a contacting unit for the wafer boat in the process chamber.
  • the line is introduced through the jacket 40 and into the tubular element 36 via a corresponding duct suitable for vacuum and temperature.
  • the line is constructed in particular in such a way that it is designed as a coaxial line 74 with an inner conductor and an outer conductor.
  • the coaxial line 74 leads essentially to the contact areas of the wafer boat 1.
  • the inner and outer conductors are connected to different groups (type 1 or type 2) of the plates 6 in a suitable manner.
  • FIGS. 5 and 6 show an alternative wafer boat 1 that can be used in a plasma treatment device 30 of the above type. In this embodiment, the same reference symbols are used insofar as the same or similar elements are described.
  • the wafer boat 1 is again formed by a multiplicity of plates 6, contacting units 7 and clamping units 8.
  • the panels 6 of this embodiment are all of type 3, i. they have no contact lugs at their longitudinal ends. Otherwise the plates can be constructed in the same way as before.
  • the plates 6 are arranged and fixed essentially parallel to one another by means of clamping units 8 with clamping elements 19, counter elements 20 and spacer elements 22.
  • the contact elements 80, 82 extend essentially perpendicular to and below the plates 6.
  • the contact elements 80, 82 are spaced apart from one another in the longitudinal direction of the plates 6 and are preferably arranged symmetrically with respect to a center plane of the plates 6.
  • the contact elements 80, 82 each have a main body 84 and 84 'and contact projections 86 and 86'.
  • the contact projections 86 and 86 ' are each constructed in such a way that they receive a lower edge of a plate 6 and can make electrical contact.
  • the contact projections 86 and 86 ′ are spaced apart in the longitudinal direction of the contact elements 80, 82 such that in each case every fourth plate 6 of the wafer boat is electrically contacted by a respective contact element 80, 82. This again results in electrical contacting in which a non-electrically contacted plate 6 is arranged between plates 6 with different electrical contacts.
  • contact projections 86 and 86 'on the contact elements 80, 82 it would also be possible downward on plates 6 to be electrically contacted to provide protruding contact lugs which can be electrically connected by receptacles in contact elements 80, 82 or also separate contact elements (similar to contact elements 15). If the plates 6 have contact lugs projecting downwards, only two different types of plates would be necessary for the construction of the wafer boat, a type without lugs and a type with a contact lug projecting downwards which is offset with respect to a longitudinal center plane. This can then be connected to one or the other contact element 80, 82 by corresponding rotation of the plates.
  • This arrangement of the contact-making units 7 enables, in particular, contact-making by placing it on a supply line contact (within a process chamber).
  • a feed line contact with low inductance on the bottom of the boat can be established by lowering the boat.
  • the weight of the boat can be used for a high pressure force in the contact, which ensures high reliability and an even current density distribution.
  • the operation of the plasma treatment device 30 will now be explained in more detail with reference to the drawings, wherein a plasma-assisted silicon nitride or aluminum oxide deposition in a plasma excited by 13.56 MHz is described as an example.
  • the treatment device 30 can, however, also be used for other deposition processes supported by plasma, with the plasma also being able to be excited by other frequencies, for example in the range of 40 kHz.
  • the coaxial line 74 is, however, provided and optimized especially for frequencies in the MHz range.
  • a loaded wafer boat 1 of the type described above (according to FIG. 1) is loaded into the process chamber 38 and that the latter is closed by the closing mechanism (not shown).
  • the wafer boat 1 is loaded in such a way that in each of the receiving slots 1 1 a total of 12 wafers, in the present example in particular Si wafers, are received, namely six on each of the plates 6.
  • the wafers are received in such a way that they lie opposite one another in pairs, as is known in the art.
  • the interior is at ambient pressure and can be flushed or flooded with N2, for example, via the gas control unit 60 (in combination with the negative pressure control unit 62).
  • the tubular element 36 and thus the process chamber 38 are heated by the heating device (not shown) in order to put the wafer boat 1 and the wafers accommodated therein on a heating device (not shown) in order to put the wafer boat 1 and the wafers accommodated therein on a heating device (not shown) in order to put the wafer boat 1 and the wafers accommodated therein on a heating device (not shown) in order to put the wafer boat 1 and the wafers accommodated therein on a
  • a DC or low-frequency AC voltage can be applied to the wafer boat 1 via the electrical control unit 64 in order to support the heating.
  • the voltage is sufficiently high so that current is conducted via the high-resistance spacer elements 22 and these act as resistance heating elements.
  • heating power is specifically introduced into the receiving slots 11, so that the predetermined temperature can be reached much more quickly than when it is heated from the outside.
  • voltages in the range from at least 200 V to approximately 1 kV are taken into account in order to achieve a sufficient current flow and sufficient heating of the spacer elements 22.
  • the electrical control unit 64 can first be deactivated and the process chamber is pumped down to a predetermined negative pressure via the negative pressure control unit 62.
  • a desired process gas such as, for example, S1H4 / N H3 for silicon nitride deposition is supplied via the gas control unit 60 in a defined mixing ratio depending on the required Layer properties introduced, while the negative pressure continues to be maintained via the negative pressure control unit 62 by sucking off the introduced process gas.
  • An HF voltage with a frequency of 13.56 MFIz is now applied to the wafer boat 1 via the electrical control unit 64, an electrically non-contacted plate being arranged between the plates 6 to which the voltage is applied.
  • the high-frequency current not only flows through a plasma, but also through two plasmas, each of which is separated by the plate that is not electrically contacted.
  • the voltage of the non-contacted plate is set automatically via an essentially capacitive voltage division, so that a corresponding plasma ignition is made possible. There is thus a series connection of plasmas between the plates of the first and second group of plates. A sufficiently high voltage must be applied between the plates 6 to which the voltage is applied.
  • Plasmas are generated between the plates 6 and in particular between the wafers accommodated in the wafer boat 1, and silicon nitride is deposited on the wafers with the aid of plasma.
  • the gas flow is maintained during the deposition process in order to avoid local depletion of the process gas with regard to the active components.
  • the electrical control unit 64 is deactivated again and the gas supply is stopped or switched to N2 in order to flush the process chamber 38 and, if necessary, ventilate it at the same time (adjustment to atmospheric pressure).
  • the process chamber 38 can then be brought back to ambient pressure.
  • the wafer boat 1 of the above type - independently of other components of the treatment device - offers the advantage that several plasmas in series can be switched, whereby the required current and the associated problems for operating the plasmas can be reduced.
  • the wafer boat 1 was explained in more detail on the basis of specific embodiments of the invention with reference to the drawing, without being limited to the specifically illustrated embodiments.
  • two or more electrically non-contacted plates could also be provided between electrically contacted plates 6, for example.
  • the plates 6 of the wafer boat 1 can also have different dimensions and, in particular, be dimensioned to accommodate a different number of wafers.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un bac de plaquettes pour le traitement au plasma de plaquettes en forme de disques, en particulier des plaquettes de semi-conducteurs, un dispositif de traitement au plasma pour recevoir un tel bac de plaquettes et un procédé de traitement au plasma de plaquettes dans un tel bac de plaquettes. Le bac de plaquettes comprend une pluralité de plaques disposées parallèlement les unes aux autres et faites d'un matériau électroconducteur, qui comprennent chacune sur leurs faces tournées les unes vers les autres au moins un réceptacle pour une plaquette. Les plaques sont reliées entre elles de manière qu'une première quantité des plaques forme un premier groupe de plaques reliées entre elles de manière électroconductrice, une seconde quantité des plaques forme un second groupe de plaques reliées entre elles de manière électroconductrice, les plaques des premier et second groupes sont disposées en alternance et entre des plaques des premier et second groupes est disposée à chaque fois au moins une plaque qui n'est pas reliée électriquement aux plaques des premier et second groupes. Lors du procédé, une pluralité de plaquettes sont reçues dans les réceptacles du bac de plaquettes et une tension alternative à haute fréquence est appliquée entre les plaques des premier et second groupes afin de générer, pendant une phase de processus, une série d'au moins deux plasmas respectivement entre des plaques des premier et second groupes de plaques qui sont séparées par la ou les plaques qui ne sont pas reliées électriquement aux plaques des premier et second groupes.
PCT/EP2020/060170 2019-04-10 2020-04-09 Bac de plaquettes et dispositif de traitement de plaquettes WO2020208146A1 (fr)

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DE102019002647.0A DE102019002647A1 (de) 2019-04-10 2019-04-10 Waferboot und Behandlungsvorrichtung für Wafer
DE102019002647.0 2019-04-10

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027142A1 (fr) * 1979-04-23 1981-04-22 Western Electric Co Traitement de plaques de cablage imprimees a multi-couches.
EP0143479A1 (fr) * 1983-10-19 1985-06-05 Johannes Hendrikus Leonardus Hanssen Appareil pour le dépôt chimique en phase vapeur active par un plasma, notamment dispositif faisant électrode et support du substrat et éléments associés
US4633811A (en) * 1984-03-28 1987-01-06 Fuji Electric Co., Ltd. Plasma CVD apparatus
US4799451A (en) * 1987-02-20 1989-01-24 Asm America, Inc. Electrode boat apparatus for processing semiconductor wafers or the like
US4887005A (en) * 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
US20090133628A1 (en) * 2007-10-22 2009-05-28 Centrotherm Photovoltaics Ag Vacuum device for continuous processing of substrates
EP2549840A1 (fr) * 2010-03-15 2013-01-23 Sharp Kabushiki Kaisha Dispositif de traitement au plasma, procédé de traitement au plasma et procédé de fabrication d'un élément semiconducteur
DE102015004419A1 (de) * 2015-04-02 2016-10-06 Centrotherm Photovoltaics Ag Waferboot und Plasma-Behandlungsvorrichtung für Wafer
WO2018193055A1 (fr) * 2017-04-19 2018-10-25 centrotherm international AG Procédé et dispositif pour la formation d'une couche sur un substrat semi-conducteur ainsi que substrat semi-conducteur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015004430B4 (de) * 2015-04-02 2017-01-05 Centrotherm Photovoltaics Ag Vorrichtung und Verfahren zur Plasmabehandlung von Wafern

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027142A1 (fr) * 1979-04-23 1981-04-22 Western Electric Co Traitement de plaques de cablage imprimees a multi-couches.
EP0143479A1 (fr) * 1983-10-19 1985-06-05 Johannes Hendrikus Leonardus Hanssen Appareil pour le dépôt chimique en phase vapeur active par un plasma, notamment dispositif faisant électrode et support du substrat et éléments associés
US4633811A (en) * 1984-03-28 1987-01-06 Fuji Electric Co., Ltd. Plasma CVD apparatus
US4799451A (en) * 1987-02-20 1989-01-24 Asm America, Inc. Electrode boat apparatus for processing semiconductor wafers or the like
US4887005A (en) * 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
US20090133628A1 (en) * 2007-10-22 2009-05-28 Centrotherm Photovoltaics Ag Vacuum device for continuous processing of substrates
EP2549840A1 (fr) * 2010-03-15 2013-01-23 Sharp Kabushiki Kaisha Dispositif de traitement au plasma, procédé de traitement au plasma et procédé de fabrication d'un élément semiconducteur
DE102015004419A1 (de) * 2015-04-02 2016-10-06 Centrotherm Photovoltaics Ag Waferboot und Plasma-Behandlungsvorrichtung für Wafer
WO2018193055A1 (fr) * 2017-04-19 2018-10-25 centrotherm international AG Procédé et dispositif pour la formation d'une couche sur un substrat semi-conducteur ainsi que substrat semi-conducteur

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