EP3265850A1 - Folie aus metall oder einer metalllegierung - Google Patents
Folie aus metall oder einer metalllegierungInfo
- Publication number
- EP3265850A1 EP3265850A1 EP16720042.7A EP16720042A EP3265850A1 EP 3265850 A1 EP3265850 A1 EP 3265850A1 EP 16720042 A EP16720042 A EP 16720042A EP 3265850 A1 EP3265850 A1 EP 3265850A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- graphene
- film
- silicon
- film according
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0423—Physical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2923—Materials being conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3204—Materials thereof being Group IVA semiconducting materials
- H10P14/3206—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3204—Materials thereof being Group IVA semiconducting materials
- H10P14/3211—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3251—Layer structure consisting of three or more layers
- H10P14/3252—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3406—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the invention relates to a foil made of metal or a metal alloy, in particular a foil made of aluminum or an aluminum alloy, a so-called neutrino or Ntrino foil (registered trademarks), a process for the production and use of a foil of metal or a metal alloy.
- Metal foils especially aluminum foils, are well known in the art.
- the object of the present invention is to further improve metal foils, in particular aluminum foils. These can then serve to convert invisible solar energy into direct current, this is done in particular by neutrino radiation is converted into energy.
- This object is achieved according to a first aspect of the invention by a film of metal or a metal alloy, wherein the film has a coating comprising graphene and silicon.
- the film has a coating comprising graphene and silicon.
- On the metallic support in different processes (vapor-deposited, sprayed, glued on) further materials are applied in a different sequence.
- the effect achieved is that kinetic energy of radiations (the invisible spectrum of solar or space radiation such as neutrinos) is converted into electricity. This is done by a nanotechnologically modified lattice structure of the applied materials.
- the modified and compressed lattice structure serves as a braking medium (for example, doped graphene) which slows the wave by about 0.1% by causing molecules of the non-visible spectrum of the solar or space energy to strike molecules of the compacted, so non-natural lattice structure .
- the pendulum motion is transferred in the next step to a conductive medium (e.g., silicon) and then to the transfer medium (e.g., aluminum, silver, gallium, etc.).
- a conductive medium e.g., silicon
- the transfer medium e.g., aluminum, silver, gallium, etc.
- the metallic carrier or metal alloy may be a common alloy.
- the foil is made of silver, gold, copper, gallium or aluminum or one of its alloys, in particular of a silver or gold alloy or an aluminum-gallium alloy.
- a film made of aluminum or an aluminum alloy has cost advantages.
- a foil made of silver or a silver alloy will achieve better results.
- An aluminum alloy may be a common aluminum metal alloy.
- an aluminum-gold or -silver alloy is possible.
- Other alloys, such as aluminum-manganese, magnesium, copper, silicon, nickel, zinc, beryllium, and mixtures thereof are also possible.
- the film is made of an aluminum gallium alloy or of gold or silver, a gold or silver alloy. This has the merit of higher conductivity by increasing the flow rate.
- the film has a thickness of 0.01 mm to 4 mm, preferably from 0.01 mm to 1 mm, particularly preferably 0.05 mm - 1 mm.
- the coating may comprise about 10% to 80% silicon, preferably 10% to 50% silicon, particularly preferably 25% silicon.
- the coating may have 20% to 90% graphene, preferably 50% to 90% graphene, most preferably 75% graphene.
- the coating has organic or inorganic adhesive components.
- Other common bonding methods other than bonding, for example, by applying are advantageous.
- the coating can be carried out in individual layered substances or by means of a mixture. It is particularly advantageous if the nanotechnologically processed substances are individually stratified, as this results in a higher efficiency, that is, more electricity is produced. It is particularly advantageous if the coating is a nano-coating in which graphene and silicon are present as nanoparticles.
- the particles of the Silicon have a size of 5nm to 500nm, more preferably 5nm, and that of graphene 20nm to 500nm, more preferably 20nm, since the smaller the particles are, the higher the efficiency is.
- Vorteühaft know the coating alternately layers of silicon and graphene, in particular 10 to 20 silicon graphene layers in particular 12 silicon graphene has layers.
- 12 layers are particularly advantageous because after 12 layers, the voltage decreases again.
- the performance of the film can be increased when applied to the silicon germanium, selenium, Kupferoxidal or tellurium.
- Other experiments that increased performance were made with tantalum, niobium, molybdenum, and antimony.
- the doping of the graphene contributes significantly to the increase in performance.
- both a doping in a vacuum by ion implantation as well as a neutron transmutation doping can be doped with the ions of the following particles. Ferroniobium, nickel niobium, yttrium or samarium oxide.
- the coating should preferably take place with exclusion of air, since, depending on the doping, the oxidation effect occurs more quickly. Even after the coating has been completed, the sequence should be sealed, as the air seal increases the stability.
- 757g of all materials are used on 1km A 2.
- the metallic carrier represents the negative pole, the graph the positive pole.
- the film can be rolled or stacked to achieve the highest values.
- a DinA4 film can be 1 watt, if you stack the films to a mobile power plant, an insulating layer should be placed between the films.
- the power generation causes no decomposition of the conductor.
- the conductor has a negative temperature coefficient. The optimum is 26.2 to 26.7 ° C.
- the film can be used underground and in the water and works better at night than during the day.
- a second aspect of the invention relates to a method for producing a film from a metal or a metal alloy, in particular a film according to the invention wherein in a first step, a silicon layer is applied to the film, in particular by spraying or steaming, in a second step, the silicon layer cured, dried and is flushed with liquid nitrogen, in a third step, a graphene layer is applied to the film and cured in a fourth step, the graphene layer, dried and rinsed with liquid nitrogen.
- germanium, selenium, copper oxide, tellurium, tantalum, niobium, molybdenum and / or antimony can be applied in a further step.
- the graphene can be doped, in particular with ferroniobium, nickel niumium, yttrium or samarium oxide, in particular by ion implantation or by neutron transmutation doping.
- a third aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, wherein in a first step graphene and silicon are pulverized and mixed and in a second step the pulverized graphene and silicon are applied to the film.
- a fourth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein in a first step graphene and silicon are pulverized and mixed and in a second step an adhesive layer is applied to the film and in a third step, the powdered graphene and silicon are applied to the adhesive layer.
- Other common bonding methods other than bonding, for example, by applying are advantageous.
- a fifth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein graphene and silicon are pulverized and mixed in a first step and mixed with an adhesive in a second step Silicon and graphene powder is mixed and in a third step, the mixture is applied to the film or firmly connected to the film.
- Other common bonding methods other than bonding, for example, by applying are advantageous.
- a sixth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein in a first step, an adhesive layer is applied to the film and applied in a second step, a graphene and / or silicon layer and in a third step, a second adhesive layer is applied to the film and in a fourth step, a further silicon and / or graphene layer is applied to the film.
- Other common bonding methods other than bonding, for example, by applying are advantageous.
- a seventh aspect of the invention relates to a use of a film according to the invention for the production of direct current from invisible solar energy.
- the mode of operation can be summed up as follows: Nature has relatively "wide-meshed” molecules, so that the neutrinos fly through because of the low mass, so the atoms in the molecules as well as the molecules in the material structure must be so tightly “packed” that part of the neutrinos can not fly through without touching the particles.
- the surface of the film therefore has nanotechnologically processed structures, so that analogous to a mechanical pendulum chain, the molecules abut each other and thus from the mass and the kinetic energy of a molecule flow and current flow is created (so-called lattice-guiding effect). This is analogous to a current flow in a line to understand: by magnet and coil, the molecules are set in motion in the generator and so we can use the electricity.
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP24218338.2A EP4553544A1 (de) | 2015-03-06 | 2016-03-07 | Folie aus metall oder einer metalllegierung |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015002789 | 2015-03-06 | ||
| DE102015014721 | 2015-11-17 | ||
| PCT/EP2016/000410 WO2016142056A1 (de) | 2015-03-06 | 2016-03-07 | Folie aus metall oder einer metalllegierung |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP24218338.2A Division EP4553544A1 (de) | 2015-03-06 | 2016-03-07 | Folie aus metall oder einer metalllegierung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3265850A1 true EP3265850A1 (de) | 2018-01-10 |
Family
ID=55910201
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP16720042.7A Ceased EP3265850A1 (de) | 2015-03-06 | 2016-03-07 | Folie aus metall oder einer metalllegierung |
| EP24218338.2A Pending EP4553544A1 (de) | 2015-03-06 | 2016-03-07 | Folie aus metall oder einer metalllegierung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP24218338.2A Pending EP4553544A1 (de) | 2015-03-06 | 2016-03-07 | Folie aus metall oder einer metalllegierung |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20180053941A1 (de) |
| EP (2) | EP3265850A1 (de) |
| WO (1) | WO2016142056A1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018009125A1 (de) * | 2018-11-21 | 2020-05-28 | Neutrino Deutschland Gmbh | Folie aus Metall oder einer Metalllegierung |
| DE102019008982A1 (de) | 2019-12-23 | 2021-06-24 | Neutrino Deutschland Gmbh | Folie mit Beschichtung |
| EP4245917B1 (de) | 2022-03-14 | 2026-04-29 | BauPoly AG | Stahlmonoblockschwelle und verfahren zu deren herstellung |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012125853A1 (en) * | 2011-03-16 | 2012-09-20 | The Regents Of The University Of California | Method for the preparation of graphene/silicon multilayer structured anodes for lithium ion batteries |
| CN103035889B (zh) * | 2011-10-09 | 2015-09-23 | 海洋王照明科技股份有限公司 | 石墨烯/纳米硅复合电极片及其制备方法 |
| CN103515604A (zh) * | 2012-06-21 | 2014-01-15 | 海洋王照明科技股份有限公司 | 硅纳米线-石墨烯复合材料及其制备方法、锂离子电池 |
| TWI461555B (zh) * | 2013-06-26 | 2014-11-21 | Univ Nat Taiwan Science Tech | 一種多層膜矽/石墨烯複合材料陽極結構 |
-
2016
- 2016-03-07 EP EP16720042.7A patent/EP3265850A1/de not_active Ceased
- 2016-03-07 WO PCT/EP2016/000410 patent/WO2016142056A1/de not_active Ceased
- 2016-03-07 EP EP24218338.2A patent/EP4553544A1/de active Pending
- 2016-03-07 US US15/555,595 patent/US20180053941A1/en not_active Abandoned
-
2021
- 2021-01-11 US US17/146,279 patent/US20210135235A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016142056A1 (de) | 2016-09-15 |
| EP4553544A1 (de) | 2025-05-14 |
| US20180053941A1 (en) | 2018-02-22 |
| US20210135235A1 (en) | 2021-05-06 |
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