EP3248063A1 - Procédé d'obtention de films ordonnes épais et de périodes élevées comprenant un copolymère a blocs - Google Patents
Procédé d'obtention de films ordonnes épais et de périodes élevées comprenant un copolymère a blocsInfo
- Publication number
- EP3248063A1 EP3248063A1 EP16703592.2A EP16703592A EP3248063A1 EP 3248063 A1 EP3248063 A1 EP 3248063A1 EP 16703592 A EP16703592 A EP 16703592A EP 3248063 A1 EP3248063 A1 EP 3248063A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- todt
- block copolymer
- block
- copolymer
- mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
Definitions
- the present invention relates to a method for obtaining thick (typically> 20 nm) and high (typically> 10 nm) ordered films at the nanoscale comprising a block copolymer (BCP).
- BCP block copolymer
- the invention also relates to the compositions used to obtain these thick ordered films and the ordered films thus obtained which can be used in particular as masks in the field of lithography.
- the method which is the subject of the invention is particularly useful when it comes to obtaining ordered films having domain sizes characterized by a dimension period of the order of 10 nm and more, for thicknesses greater than 20 nm. .
- US Pat. No. 5,513,356 discloses a composition comprising at least one ordered polystyrene-poly (methyl methacrylate) diblock having a PS volume fraction of between 0.65 and 0.87, satisfying an arrangement equation at 225 ° C. and a polystyrene diblock.
- the compositions show an improvement in the degree of perpendicularity of the rolls. There is no mention of the possibility of obtaining ordered films with a period greater than 10 nm for thicknesses greater than 20 nm. Shin & al. In J. Mater.
- Chem, 2010, 20, 7241 mention an improvement in the self-organization of ordered films of long-term BCP via a mixture of BCP consisting of cylindrical type BCPs without, however, giving precise measures of this improvement, and without taking into account the that the composition of the mixture is not the same as that of the initial cylindrical polymer. It is therefore very difficult to decorrelate the effect of the composition variation of the effect of the addition of an unordered BCP and of the effect of the period variation on the improvement of the self-regulation. organization.
- Pure BCPs organizing in orderly movies of big periods are very difficult to organize for movies ordered relatively thick with an acceptable level of defect.
- Mixtures comprising at least one BCP are a solution to this problem, and it is shown in the present invention that in the case where one seeks to obtain thick ordered films for PCOs having high period ordered morphologies with little defect.
- the mixtures comprising at least one BCP having an order-disorder temperature (TODT), associated with at least one compound having no TODT are a solution, when the order-disorder transition temperature (TODT) of the mixture is less than PCO's TODT alone.
- TODT order-disorder transition temperature
- the invention relates to a method for obtaining an ordered film with a thickness greater than 20 nm and a period longer than 10 nm, said ordered film comprising a mixture of at least one block copolymer having an order-disorder transition temperature (TODT) and at least one Tg with at least one compound having no TODT, this mixture having a TODT lower than the TODT of the block copolymer alone, the process comprising the following steps: Mixing at least one block copolymer having a TODT and at least one compound having no TODT in a solvent,
- TODT order-disorder transition temperature
- any block copolymer may be used in the context of the invention, whether it be a di-copolymer or a block copolymer.
- the order-disorder transition temperature TODT which corresponds to a phase separation of the constituent blocks of the block copolymer can be measured in different ways, such as DSC (differential scanning calorimetry, differential thermal analysis), SAXS (small angle X ray scattering, small angle X-ray scattering), static birefringence, dynamic mechanical analysis, DMA or any other method to visualize the temperature at which a phase separation occurs (corresponding to the disorder order transition). A combination of these techniques can also be used.
- DSC differential scanning calorimetry, differential thermal analysis
- SAXS small angle X ray scattering, small angle X-ray scattering
- static birefringence dynamic mechanical analysis
- DMA dynamic mechanical analysis
- n being an integer between 1 and 10 inclusive.
- n is between 1 and 5, inclusive, and preferably n is between 1 and 2 inclusive, and more preferably n is 1, m being an integer between 1 and 10, terminals included.
- m is between 1 and 5, inclusive, and preferably, m is between 1 and 4, including terminals, and more preferably m is equal to 1.
- block copolymers may be synthesized by any techniques known to those skilled in the art, among which mention may be made of polycondensation, ring-opening polymerization, anionic, cationic or radical polymerization, these techniques being controllable or not, and combined between they or not.
- radical polymerization they may be controlled by any known technique such as NMP ("Nitroxide Mediated Polymerization"), RAFT ("Reversible Addition and Fragmentation Transfer”), ATRP (“Atom Transfer Radical Polymerization”) , INIFERTER ("Initiator-Transfer-
- Termination "Reverse Iodine Transfer Polymerization), ITP (Iodine Transfer Polymerization).
- the block copolymers are prepared by controlled radical polymerization, more particularly by controlled polymerization with nitroxides, in particular N-tert-butyl-1-diethylphosphono-2,2-dimethylpropyl nitroxide.
- the block copolymers are prepared by anionic polymerization.
- the constituent monomers of the block copolymers will be chosen from the following monomers: at least one vinyl, vinylidene, diene, olefinic, allylic or (meth) acrylic monomer.
- This monomer is chosen more particularly from vinylaromatic monomers such as styrene or substituted styrenes, in particular alpha-methylstyrene, silylated styrenes, acrylic monomers such as acrylic acid or its salts, alkyl acrylates and cycloalkyl acrylates.
- vinylaromatic monomers such as styrene or substituted styrenes, in particular alpha-methylstyrene, silylated styrenes, acrylic monomers such as acrylic acid or its salts, alkyl acrylates and cycloalkyl acrylates.
- aryl such as methyl acrylate, ethyl acrylate, butyl acrylate, ethylhexyl acrylate or phenyl acrylate, hydroxyalkyl acrylates such as 2-hydroxyethyl acrylate, alkyl ether acrylates such as 2-methoxyethyl acrylate, alkoxy- or aryloxy-polyalkylene glycol acrylates such as methoxypolyethylene glycol acrylates, ethoxypolyethylene glycol acrylates, methoxypolypropylene glycol acrylates, methoxypolyethylene glycol-polypropylene glycol acrylates or mixtures thereof, acrylates of aminoalkyl such as 2- (dimethylamino) ethyl acrylate (ADAME), fluorinated acrylates, silyl acrylates, phospho acrylates such as alkylene glycol phosphate acrylates, glycidyl, dicyclopentenyloxy
- ethylimidazolidinone the 2- (2-oxo-1-imidazolidinyl) ethyl methacrylate, 1-acrylonitrile, acrylamide or substituted acrylamides, 4-acryloylmorpholine, N-methylolacrylamide, methacrylamide or substituted methacrylamides, N-methylolmethacrylamide, methacrylamido-propyltrimethylammonium chloride (MAPTAC), glycidyl, dicyclopentenyloxyethyl methacrylates, itaconic acid, maleic acid or its salts, maleic anhydride, alkyl or alkoxy- or aryloxy maleates or hemimaleates polyalkylene glycol, vinylpyridine, vinylpyrrolidinone, (alkoxy) poly (alkylene glycol) vinyl ether or divinyl ether, such as methoxy poly (ethylene glycol) vinyl ether, poly (ethylene glycol) divinyl ether, olefinic
- the monomers will be chosen, without limitation, from the following monomers:
- At least one vinyl, vinylidene, diene, olefinic, allylic or (meth) acrylic monomer are chosen more particularly from vinylaromatic monomers such as styrene or substituted styrenes, in particular alpha-methylstyrene, and acrylic monomers such as alkyl, cycloalkyl or aryl acrylates, such as methyl acrylate, dicyclohexyl acrylate and the like.
- ether alkyl acrylates such as 2-methoxyethyl acrylate, alkoxy- or aryloxy-polyalkylene glycol acrylates such as methoxypolyethylene glycol acrylates, ethoxypolyethylene glycol acrylates and the like.
- methoxypolypropylene glycol acrylates methoxypolyethylene glycol-polypropylene glycol acrylates or mixtures thereof, aminoalkyl acrylates such as 2- (dimethylamino) ethyl acrylate (ADAME), fluorinated acrylates, silyl acrylates, phosphorus acrylates such as alkylene glycol phosphate acrylates, glycidyl acrylates, dicyclopentenyloxyethyl acrylates, methylene glycol alkyl, cycloalkyl, alkenyl or aryl acrylates such as methyl methacrylate (MMA), lauryl, cyclohexyl, allyl, phenyl or naphthyl, methacrylates of etheralkyl such as methacrylate 2-ethoxyethyl, alkoxy- or aryloxy-polyalkyleneglycol methacrylates such as methoxypolyethylene glycol methacrylates,
- the block copolymers having an order-disorder transition temperature consist of block copolymer one of which blocks comprises a styrene monomer and the other block comprises a methacrylic monomer; more preferably, the block copolymers consist of block copolymer one of which blocks comprises styrene and the other block comprises methyl methacrylate.
- the compounds which do not have an order-disorder transition temperature will be chosen from block copolymers, as defined above, but also random copolymers, homopolymers and gradient copolymers. According to a preferred variant, the compounds are homopolymers or random copolymers and have a monomer composition identical to that of one of the block copolymer blocks having a TOD.
- the homopolymers or random copolymers comprise styrene or methacrylic monomers.
- random homopolymers or copolymers include styrene or methyl methacrylate.
- the compounds which do not have an order-disorder transition temperature will also be chosen from plasticizers, among which mention may be made, in a nonlimiting manner, of branched or linear phthalates such as di-n-octyl, dibutyl, -2-ethylhexyl phatalate.
- the compounds that do not have an order-disorder transition temperature will also be chosen from among the fillers among which may be mentioned mineral fillers such as carbon black, nanotubes, of carbon or not, fibers, milled or not, agents stabilizers (light, in particular UV, and heat), dyes, inorganic or organic photosensitive pigments such as porphyrins, photoinitiators, that is to say compounds capable of generating radicals under irradiation.
- Compounds that do not have an order-disorder transition temperature will also be chosen from ionic compounds, polymeric or non-polymeric.
- a combination of the compounds mentioned may also be used in the context of the invention, such as a block copolymer having no TODT and a statistical copolymer or homopolymer having no TODT.
- a block copolymer having a TODT, a block copolymer which does not have TODT and a charge, a homopolymer or a random copolymer, for example having no TODT may be mixed.
- compositions comprising at least one block copolymer having a
- TODT and at least one compound, this or these compounds having no TODT.
- the TODT of the mixture which is the subject of the invention should be less than the TODT of the block copolymer organized alone, but must be greater than the glass transition temperature, measured by DSC (differential enthalpic analysis, Tg) of the block having the highest Tg.
- DSC differential enthalpic analysis
- the ordered films obtained in accordance with the invention have a period greater than 10 nm, preferably greater than 30 nm and more preferably greater than 40 nm inclusive with a lower defect rate than those obtained with a block-only copolymer.
- They have thicknesses greater than 20 nm, preferably greater than 40 nm, and more preferably greater than 50 nm inclusive, with a lower defect rate than those obtained with a block-only copolymer.
- the baking temperatures allowing the self-assembly will be between the glass transition temperature, measured by DSC (differential enthalpy analysis, Tg) of the block having the highest Tg and the TODT of the mixture, preferably between 1 and 50 ° C. below the TODT of the mixture, preferably between 10 and 30 ° C below the TODT of the mixture and more preferably between 10 and 20 ° C below the TODT of the mixture.
- DSC differential enthalpy analysis
- the method of the invention allows the deposition of ordered film on a surface such as silicon, silicon having a native or thermal oxide layer, germanium, platinum, tungsten, gold, titanium nitrides, graphenes, BARC (bottom anti-reflective coating) or any other anti-reflective layer used in lithography.
- a surface such as silicon, silicon having a native or thermal oxide layer, germanium, platinum, tungsten, gold, titanium nitrides, graphenes, BARC (bottom anti-reflective coating) or any other anti-reflective layer used in lithography.
- BARC bottom anti-reflective coating
- the surfaces may be said to be “free” (planar and homogeneous surface both from a topographic and chemical point of view) or to have structures for guiding the block copolymer "pattern", whether this guidance is chemical guidance type (called “chemistry-epitaxy guidance”) or physical / topographic guidance (called “graphoepitaxy guidance”).
- a solution of the block copolymer composition is deposited on the surface and then the solvent is evaporated according to techniques known to those skilled in the art such as the so-called “spin coating” technique, “Doctor Blade” “Knife system”, “slot die System” but any other technique can be used such as a dry deposit, that is to say without going through a prior dissolution.
- heat treatment or solvent vapor is carried out, a combination of the two treatments, or any other known treatment to those skilled in the art, which allows the block copolymer composition to organize itself properly by nanostructuring, and thus to establish the ordered film.
- the cooking is carried out thermally.
- the nanostructuration of a mixture of block copolymer having a TODT and a compound deposited on a surface treated by the process of the invention leading to the ordered film can take the forms such as cylindrical (hexagonal symmetry (symmetry of hexagonal network primitive "6mm") according to the Hermann-Mauguin notation, or tetragonal / quadratic ("4mm” tetragonal lattice symmetry), spherical (hexagonal symmetry ("6mm” or “6 / mmm” primitive hexagonal lattice symmetry), or tetragonal / quadratic (“4mm” tetragonal lattice symmetry), or cubic (“mH” lattice symmetry), lamellar, or gyroid.
- the preferred form of nanostructuring is of the hexagonal cylindrical type.
- the method for self-assembly of block copolymers on a treated surface according to the invention is governed by thermodynamic laws.
- each cylinder is surrounded by 6 equidistant neighboring cylinders if there is no defect.
- Several types of defects can thus be identified.
- the first type is based on the evaluation of the number of neighbors around a cylinder constituted by the arrangement of the block copolymer, also called coordination defects. If five or seven cylinders surround the cylinder considered, it will be considered that there is a defect of coordination number.
- the second type of defect considers the average distance between the cylinders surrounding the cylinder considered. [W.Li, F.Qiu, Y.Yang, and ACShi,
- a last type of defect concerns the angle of cylinders of the block copolymer deposited on the surface.
- the block copolymer is no longer perpendicular to the surface but lying parallel to it, it will be considered that a defect of orientation appears.
- Example 1 T odt measurement by dynamic mechanical analysis.
- Two PS-j-PMMA block copolymers of different molecular weight are synthesized by anionic polymerization, but commercially available products can also be used. to be used. The characterizations of these products are summarized in Table No. 1.
- the AMD makes it possible to measure the conservation modulus G 'and the loss module G' 'of the material and to determine the damping factor tanA defined as the ratio G' '/ G'.
- the measurements are made on an ARES type viscoelastic meter, on which the PLANS 25mm geometry is installed.
- the gap setting is made at the initial temperature of 100 ° C.
- the sample pellet is placed between the planes inside the oven heated to 100 ° C, a slight normal force is applied to ensure the sample-to-plane contact and thus avoid slip problems that could distort the measurement. torque and therefore modules.
- the temperature sweep is performed at the frequency of 1Hz.
- the initial strain applied to the sample is 0.1%, then it is automatically adjusted to stay above the sensor sensitivity limit of 0.2 cm. boy Wut.
- the temperature varies from 100 to 260 ° C in the bearing mode with one measurement every two degrees and a temperature equilibrium time of 30 seconds before the measurement.
- the lower molecular weight block copolymer After the rubber tray, the lower molecular weight block copolymer has a G 'lower than G''thus reflecting the destructuring of the copolymer, hence the order-disorder transition.
- the T odt is thus defined as being the first intersection between G 'and G''.
- T odt is not observed in the case of the copolymer of higher molar mass, where at any time G 'remains greater than G ". This block copolymer do not present T odt below its degradation temperature.
- Table 2 The results of the AMD analysis are summarized in Table 2 and the associated graphs are in Figure 1.
- Example 2 Films resulting from the self-assembly of block copolymers.
- the silicon substrates are cleaved into 2.5x2.5cm pieces, then the residual particles are removed under a stream of nitrogen.
- the substrates can be cleaned with either an oxygen plasma or a piranha solution (H 2 SO 4 / H 2 O 2 mixture in a ratio of 2: 1 by volume) for a few minutes and rinsed with distilled water.
- a solution of PS-r-PMMA as described in WO2013083919 typically 2% by weight in PGMEA (propylene glycol ether-methyl acetate)
- S / MMA composition is then deposited on the clean substrate by spin coating (or any another suitable technique known to those skilled in the art to make this deposit) so as to obtain a film ⁇ 70nm thick.
- the substrate is annealed at 220 ° C for 10 minutes (or any other suitable temperature / time pair) so as to perform the covalent grafting of a monolayer of molecules on the substrate; the excess of non-grafted molecules is removed by rinsing with PGMEA.
- the block copolymer (“BCP") PS-fc-PMMA or block copolymer mixture solution (typically 1% by weight in the PGMEA) is dispensed onto the substrate functionalized by spin coating (or another technique). ) so as to obtain a dry film of desired thickness.
- the film is then annealed according to the chosen technique, for example a thermal annealing at 230 ° C.
- the substrate can be immersed for a few minutes in acetic acid and then rinsed with distilled water, or the film can undergo a very mild oxygen plasma, or a combination of these two techniques, in order to to increase the contrast between the different phases of the block copolymer film in order to facilitate imaging of the nanostructures by the chosen technique (SEM, AFM ).
- SEM, AFM Three block copolymers synthesized by anionic polymerization or commercially available are used. Their characteristics are given in Table 3:
- the block copolymer mixture produced is a mixture between the reference BCP # 2 and # 3, at 8: 2 (80% of No. 2 mixed with 20% of No. 3). It is noted that the mixture can be made either in the solid state (for example by mixing the BCPs in powder form) or in the liquid state (for example by mixing solutions of pure BCPs of the same concentrations; concentrations of the solutions are different, mixing will be done in order to respect the fixed ratio).
- PCO "Reference # 1" serves as a reference system for the study.
- the processing of the images thus obtained is carried out with the appropriate software and well described, so as to extract for each system and the corresponding film thicknesses the values of the periods and the number of coordination defects (a lack of coordination is described as being a cylinder oriented perpendicular to the substrate and having 5 or 7 neighbors instead of 6).
- FIG. 3 An example of processing the images obtained is shown in Figure 3 for information.
- the images shown are those obtained for each system (pure BCP and the mixture produced) for films 35 nm thick.
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
- Graft Or Block Polymers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1550468A FR3031750B1 (fr) | 2015-01-21 | 2015-01-21 | Procede d'obtention de films ordonnes epais et de periodes elevees comprenant un copolymere a blocs |
PCT/FR2016/050114 WO2016116706A1 (fr) | 2015-01-21 | 2016-01-21 | Procédé d'obtention de films ordonnes épais et de périodes élevées comprenant un copolymère a blocs |
Publications (1)
Publication Number | Publication Date |
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EP3248063A1 true EP3248063A1 (fr) | 2017-11-29 |
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Application Number | Title | Priority Date | Filing Date |
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EP16703592.2A Withdrawn EP3248063A1 (fr) | 2015-01-21 | 2016-01-21 | Procédé d'obtention de films ordonnes épais et de périodes élevées comprenant un copolymère a blocs |
Country Status (9)
Country | Link |
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US (1) | US20180164679A1 (fr) |
EP (1) | EP3248063A1 (fr) |
JP (1) | JP6652568B2 (fr) |
KR (1) | KR20170120111A (fr) |
CN (1) | CN107430331A (fr) |
FR (1) | FR3031750B1 (fr) |
SG (1) | SG11201705931SA (fr) |
TW (1) | TWI598383B (fr) |
WO (1) | WO2016116706A1 (fr) |
Families Citing this family (2)
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FR3031748B1 (fr) * | 2015-01-21 | 2018-09-28 | Arkema France | Procede de reduction du temps d'assemblage des films ordones de copolymere a blocs |
FR3085381B1 (fr) | 2018-09-03 | 2020-10-02 | Commissariat Energie Atomique | Procede d’auto-assemblage dirige d’un melange de copolymere a blocs |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US8133534B2 (en) * | 2004-11-22 | 2012-03-13 | Wisconsin Alumni Research Foundation | Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials |
JP5377857B2 (ja) * | 2004-11-22 | 2013-12-25 | ウィスコンシン・アラムナイ・リサーチ・ファウンデーション | 非周期的パターン共重合体フィルムのための方法及び組成 |
US8294139B2 (en) * | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US8425982B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
WO2009145204A1 (fr) * | 2008-05-30 | 2009-12-03 | Canon Kabushiki Kaisha | Film de copolymère séquencé et son procédé de fabrication |
JP5178401B2 (ja) * | 2008-08-29 | 2013-04-10 | 株式会社日立製作所 | 微細構造を有する高分子薄膜およびパターン基板の製造方法 |
FR2983773B1 (fr) | 2011-12-09 | 2014-10-24 | Arkema France | Procede de preparation de surfaces |
CN103187245B (zh) * | 2011-12-30 | 2015-06-17 | 中芯国际集成电路制造(上海)有限公司 | 一种通过定向自组装嵌段共聚物的光刻方法 |
US8513356B1 (en) * | 2012-02-10 | 2013-08-20 | Dow Global Technologies Llc | Diblock copolymer blend composition |
JP5865340B2 (ja) * | 2013-12-10 | 2016-02-17 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
JP5971231B2 (ja) * | 2013-12-10 | 2016-08-17 | 株式会社村田製作所 | コモンモードチョークコイル及びその製造方法 |
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2015
- 2015-01-21 FR FR1550468A patent/FR3031750B1/fr active Active
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2016
- 2016-01-21 US US15/545,070 patent/US20180164679A1/en not_active Abandoned
- 2016-01-21 TW TW105101873A patent/TWI598383B/zh active
- 2016-01-21 CN CN201680017307.XA patent/CN107430331A/zh active Pending
- 2016-01-21 SG SG11201705931SA patent/SG11201705931SA/en unknown
- 2016-01-21 KR KR1020177023095A patent/KR20170120111A/ko not_active Application Discontinuation
- 2016-01-21 WO PCT/FR2016/050114 patent/WO2016116706A1/fr active Application Filing
- 2016-01-21 EP EP16703592.2A patent/EP3248063A1/fr not_active Withdrawn
- 2016-01-21 JP JP2017537901A patent/JP6652568B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2018505274A (ja) | 2018-02-22 |
US20180164679A1 (en) | 2018-06-14 |
TWI598383B (zh) | 2017-09-11 |
JP6652568B2 (ja) | 2020-02-26 |
CN107430331A (zh) | 2017-12-01 |
SG11201705931SA (en) | 2017-08-30 |
KR20170120111A (ko) | 2017-10-30 |
WO2016116706A1 (fr) | 2016-07-28 |
FR3031750B1 (fr) | 2018-09-28 |
FR3031750A1 (fr) | 2016-07-22 |
TW201700559A (zh) | 2017-01-01 |
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