JP6652568B2 - ブロックコポリマーを含む、長ピリオドで厚い秩序膜を得るための方法 - Google Patents
ブロックコポリマーを含む、長ピリオドで厚い秩序膜を得るための方法 Download PDFInfo
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- JP6652568B2 JP6652568B2 JP2017537901A JP2017537901A JP6652568B2 JP 6652568 B2 JP6652568 B2 JP 6652568B2 JP 2017537901 A JP2017537901 A JP 2017537901A JP 2017537901 A JP2017537901 A JP 2017537901A JP 6652568 B2 JP6652568 B2 JP 6652568B2
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- JP
- Japan
- Prior art keywords
- todt
- methacrylate
- copolymer
- block copolymer
- acrylate
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
Description
− TODTを有する少なくとも1種のブロックコポリマーとTODTを有さない少なくとも1種の化合物とを溶媒中で混合する工程と、
− この混合物を表面上に成膜する工程と、
− 表面上に成膜した混合物を、ブロックコポリマーの最大のTgと混合物のTODTとの間の温度で硬化させる工程と
を含む方法に関する。
− N.P.Balsaraら、Macromolecules 1992、25、3896−3901。
− N.Sakamotoら、Macromolecules 1997、30、5321−5330、及びMacromolecule 1997、30、1621−1632
− J.K.Kimら、Macromolecules 1998、31、4045−4048。
動的機械分析(dynamical mechanical analysis)による秩序−無秩序転移温度分析
2種の異なる分子量のブロックコポリマーPS−b−PMMAは、従来からのアニオンによる方法によって合成するか、又は市販製品を使用することができる。生成物の特性評価を表1に示す。
ブロックコポリマーの誘導自己組織化に関する厚さ及び欠陥率:
2.5×2.5cmのシリコン基板を、例えばピラニア溶液のような公知の技術によって適切に清浄化し、次いで蒸留水で洗浄した後に使用した。
a) SEC(サイズ排除クロマトグラフィー、ポリスチレン標準)によって決定される場合
b) 1H NMRによって決定される
c) DMA(実施例1に記載するような動的機械分析)によって決定される。コポリマー3及び4のTODTは存在しない。
Claims (10)
- 20nm超の厚さ及び10nm超のピリオドを有する秩序膜を得るための方法であって、
前記秩序膜が、
秩序−無秩序転移温度(TODT)及び少なくとも1つのTgを有する少なくとも1種のブロックコポリマーと、
TODTを有さない少なくとも1種の化合物との
混合物を含み、前記化合物が、ジブロックコポリマーであり、
前記混合物が、ブロックコポリマー単独のTODTより低いTODTを有し、
以下の工程:
− TODTを有する少なくとも1種のブロックコポリマーとTODTを有さない少なくとも1種の化合物とを溶媒中で混合する工程、
− この混合物を表面上に成膜する工程、及び
− 表面上に成膜した混合物を、ブロックコポリマーの最大のTgと混合物のTODTとの間の温度で硬化させる工程
を含む、方法。 - TODTを有するブロックコポリマーがジブロックコポリマーである、請求項1に記載の方法。
- ジブロックコポリマーのブロックのうち一方がスチレンモノマーを含み、他方のブロックがメタクリル酸モノマーを含む、請求項2に記載の方法。
- ジブロックコポリマーのブロックのうち一方がスチレンを含み、他方のブロックがメタクリル酸メチルを含む、請求項3に記載の方法。
- ジブロックコポリマーのブロックのうち一方がスチレンモノマーを含み、他方のブロックがメタクリル酸モノマーを含む、請求項1に記載の方法。
- ジブロックコポリマーのブロックのうち一方がスチレンを含み、他方のブロックがメタクリル酸メチルを含む、請求項5に記載の方法。
- 表面がフリーである、請求項1に記載の方法。
- 表面がガイドされる、請求項1に記載の方法。
- 20nm超の厚さ及び10nm超のピリオドを有する秩序膜を得るための、TODTを有する少なくとも1種のブロックコポリマーと、TODTを有さない少なくとも1種の化合物とを含む組成物であって、ブロックコポリマー単独のTODTより低いTODTを有する、組成物。
- リソグラフィーのマスク又は秩序膜を生成するための、請求項1から8の何れか一項に記載の方法の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1550468A FR3031750B1 (fr) | 2015-01-21 | 2015-01-21 | Procede d'obtention de films ordonnes epais et de periodes elevees comprenant un copolymere a blocs |
FR1550468 | 2015-01-21 | ||
PCT/FR2016/050114 WO2016116706A1 (fr) | 2015-01-21 | 2016-01-21 | Procédé d'obtention de films ordonnes épais et de périodes élevées comprenant un copolymère a blocs |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018505274A JP2018505274A (ja) | 2018-02-22 |
JP6652568B2 true JP6652568B2 (ja) | 2020-02-26 |
Family
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Family Applications (1)
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JP2017537901A Expired - Fee Related JP6652568B2 (ja) | 2015-01-21 | 2016-01-21 | ブロックコポリマーを含む、長ピリオドで厚い秩序膜を得るための方法 |
Country Status (9)
Country | Link |
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US (1) | US20180164679A1 (ja) |
EP (1) | EP3248063A1 (ja) |
JP (1) | JP6652568B2 (ja) |
KR (1) | KR20170120111A (ja) |
CN (1) | CN107430331A (ja) |
FR (1) | FR3031750B1 (ja) |
SG (1) | SG11201705931SA (ja) |
TW (1) | TWI598383B (ja) |
WO (1) | WO2016116706A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3031748B1 (fr) * | 2015-01-21 | 2018-09-28 | Arkema France | Procede de reduction du temps d'assemblage des films ordones de copolymere a blocs |
FR3085381B1 (fr) | 2018-09-03 | 2020-10-02 | Commissariat Energie Atomique | Procede d’auto-assemblage dirige d’un melange de copolymere a blocs |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8133534B2 (en) * | 2004-11-22 | 2012-03-13 | Wisconsin Alumni Research Foundation | Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials |
JP5377857B2 (ja) * | 2004-11-22 | 2013-12-25 | ウィスコンシン・アラムナイ・リサーチ・ファウンデーション | 非周期的パターン共重合体フィルムのための方法及び組成 |
US8294139B2 (en) * | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US8425982B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US20110111170A1 (en) * | 2008-05-30 | 2011-05-12 | Canon Kabushiki Kaisha | Block copolymer film and method of producing the same |
JP5178401B2 (ja) * | 2008-08-29 | 2013-04-10 | 株式会社日立製作所 | 微細構造を有する高分子薄膜およびパターン基板の製造方法 |
FR2983773B1 (fr) | 2011-12-09 | 2014-10-24 | Arkema France | Procede de preparation de surfaces |
CN103187245B (zh) * | 2011-12-30 | 2015-06-17 | 中芯国际集成电路制造(上海)有限公司 | 一种通过定向自组装嵌段共聚物的光刻方法 |
US8513356B1 (en) * | 2012-02-10 | 2013-08-20 | Dow Global Technologies Llc | Diblock copolymer blend composition |
JP5865340B2 (ja) * | 2013-12-10 | 2016-02-17 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
JP5971231B2 (ja) * | 2013-12-10 | 2016-08-17 | 株式会社村田製作所 | コモンモードチョークコイル及びその製造方法 |
-
2015
- 2015-01-21 FR FR1550468A patent/FR3031750B1/fr active Active
-
2016
- 2016-01-21 KR KR1020177023095A patent/KR20170120111A/ko not_active Application Discontinuation
- 2016-01-21 JP JP2017537901A patent/JP6652568B2/ja not_active Expired - Fee Related
- 2016-01-21 US US15/545,070 patent/US20180164679A1/en not_active Abandoned
- 2016-01-21 SG SG11201705931SA patent/SG11201705931SA/en unknown
- 2016-01-21 CN CN201680017307.XA patent/CN107430331A/zh active Pending
- 2016-01-21 TW TW105101873A patent/TWI598383B/zh active
- 2016-01-21 EP EP16703592.2A patent/EP3248063A1/fr not_active Withdrawn
- 2016-01-21 WO PCT/FR2016/050114 patent/WO2016116706A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP3248063A1 (fr) | 2017-11-29 |
WO2016116706A1 (fr) | 2016-07-28 |
FR3031750A1 (fr) | 2016-07-22 |
FR3031750B1 (fr) | 2018-09-28 |
US20180164679A1 (en) | 2018-06-14 |
CN107430331A (zh) | 2017-12-01 |
KR20170120111A (ko) | 2017-10-30 |
SG11201705931SA (en) | 2017-08-30 |
TW201700559A (zh) | 2017-01-01 |
TWI598383B (zh) | 2017-09-11 |
JP2018505274A (ja) | 2018-02-22 |
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